The RF Line
Microwave Pulse
Power Transistor
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
CBO
70
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current -- Peak (1)
I
C
12
Adc
Total Device Dissipation @ T
C
= 25
C (1) (2)
Derate above 25
C
P
D
583
3.33
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R
JC
0.3
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
V
(BR)CES
70
--
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 50 mAdc, I
E
= 0)
V
(BR)CBO
70
--
--
Vdc
EmitterBase Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
V
(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
I
CBO
--
--
10
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
30
--
--
NOTES:
(continued)
1. Pulse Width = 10
s, Duty Cycle = 1%.
2. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
s Pulse on Tektronix 576 or equivalent.
MRF1150MA
150 W PEAK, 9601215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 33204, STYLE 1
Order this document
by MRF1150MA/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 50 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
--
25
32
pF
FUNCTIONAL TESTS
(Pulse Width = 10
s, Duty Cycle = 1.0%)
CommonBase Amplifier Power Gain
(V
CC
= 50 Vdc, P
out
= 150 W pk, f = 1090 MHz)
G
PB
7.8
9.8
--
dB
Collector Efficiency
(V
CC
= 50 Vdc, P
out
= 150 W pk, f = 1090 MHz)
35
40
--
%
Load Mismatch
(V
CC
= 50 Vdc, P
out
= 150 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 -- 220 pF Chip Capacitor, 100mil ATC
C3 -- 0.1
F/100 V
C4 -- 47
F/75 V Electrolytic
L1, L2 -- 3 Turns #18 AWG, 1/8
ID
Z1Z10 -- Distributed Microstrip Elements -- See Photomaster
Board Material -- 0.031
Thick TeflonFiberglass,
r
= 2.5
RF
OUTPUT
DUT
RF
INPUT
V
CC
= 50 Vdc
C2
C3
C4
L1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C2
-
+
+
Z10
L2
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
200
150
100
50
0
5
10
15
20
25
0
P
in
, INPUT POWER (WATTS pk)
P
, OUTPUT
POWER (W
A
TTS pk)
out
f, FREQUENCY (MHz)
P
, OUTPUT
POWER (W
A
TTS pk)
out
V
CC
= 50 V
t
p
= 10
s
D = 1%
P
in
= 20 W pk
V
CC
= 50 V
t
p
= 10
s
D = 1%
f = 960 MHz
1090 MHz
1215 MHz
200
150
100
50
0
960
1090
1215
17.5 W pk
12.5 W pk
10 W pk
15 W pk
2
REV 9
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
Figure 6. Series Equivalent Input/Output Impedance
f
MHz
Z
in
Ohms
Z
OL
*
Ohms
960
1090
1215
1.5 + j9.6
5.0 + j7.5
2.4 + j5.6
2.6 + j4.1
2.7 + j4.6
2.8 + j5.3
P
out
= 150 W pk
V
CC
= 50 V
t
p
= 10
s
D = 1%
G
PB
, POWER GAIN (dB)
f = 1090 MHz
t
p
= 10
s
D = 1%
P
o
= 150 W pk
V
CC
= 50 V
t
p
= 10
s
D = 1%
20
10
20
30
40
50
0
V
CC
, SUPPLY VOLTAGE (VOLTS)
P
, OUTPUT
POWER (W
A
TTS pk)
out
14
12
10
8
6
4
960
1090
1215
f, FREQUENCY (MHz)
5
15
25
35
45
P
in
= 20 W pk
17.5 W pk
12.5 W pk
15 W pk
10 W pk
200
150
100
50
Z
OL
* = Conjugate of the optimum load
Z
OL
* =
impedance into which the device
Z
OL
* =
output operates at a given output
Z
OL
* =
power, voltage, and frequency.
Z
in
f = 960 MHz
1215
Z
OL
*
1090
0
5.0
10
f = 960 MHz
1215
1090
15
5.0
10
15
Figure 7. Typical Pulse Performance
P
out
= 150 W pk
V
CC
= 50 V
t
p
= 10
s
D = 1%
SCALE
2
s/DIV
3
REV 9
PACKAGE DIMENSIONS
CASE 33204
ISSUE D
NOTES:
1. DIMENSION K APPLIES TWO PLACES.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1973.
STYLE 1:
PIN 1. BASE
2. EMITTER
3. BASE
4. COLLECTOR
SEATING
PLANE
T
K
M
L
D
A
4
1
3
2
8-32 UNC 2A
F
H
E
U
C
N
B
J
M
0.76 (0.030)
B
M
T
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
6.86
7.62
0.270
0.300
B
6.10
6.60
0.240
0.260
C
16.26
16.76
0.640
0.660
D
4.95
5.21
0.195
0.205
E
1.40
1.65
0.055
0.065
F
2.67
4.32
0.105
0.170
H
1.40
1.65
0.055
0.065
J
0.08
0.18
0.003
0.007
K
15.24
---
0.600
---
L
2.41
2.67
0.095
0.105
M
45 NOM
45 NOM
N
4.97
6.22
0.180
0.245
U
2.92
3.68
0.115
0.145
_
_
4
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 9
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