The RF MOSFET Line
RF Power Field-Effect Transistor
NChannel EnhancementMode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 30 MHz, 50 V:
Output Power -- 150 W
Gain -- 18 dB (22 dB Typ)
Efficiency -- 40%
Typical Performance at 175 MHz, 50 V:
Output Power -- 150 W
Gain -- 13 dB
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
125
Vdc
DrainGate Voltage
V
DGO
125
Vdc
GateSource Voltage
V
GS
40
Vdc
Drain Current -- Continuous
I
D
16
Adc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
300
1.71
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.6
C/W
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF151
150 W, 50 V, 175 MHz
NCHANNEL
BROADBAND
RF POWER MOSFET
CASE 21111, STYLE 2
D
G
S
Order this document
by MRF151/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (V
GS
= 0, I
D
= 100 mA)
V
(BR)DSS
125
--
--
Vdc
Zero Gate Voltage Drain Current (V
DS
= 50 V, V
GS
= 0)
I
DSS
--
--
5.0
mAdc
GateBody Leakage Current (V
GS
= 20 V, V
DS
= 0)
I
GSS
--
--
1.0
Adc
ON CHARACTERISTICS
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 100 mA)
V
GS(th)
1.0
3.0
5.0
Vdc
DrainSource OnVoltage (V
GS
= 10 V, I
D
= 10 A)
V
DS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (V
DS
= 10 V, I
D
= 5.0 A)
g
fs
5.0
7.0
--
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1.0 MHz)
C
iss
--
350
--
pF
Output Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1.0 MHz)
C
oss
--
220
--
pF
Reverse Transfer Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1.0 MHz)
C
rss
--
15
--
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
(V
DD
= 50 V, P
out
= 150 W (PEP), I
DQ
= 250 mA)
f = 175 MHz
G
ps
18
--
22
13
--
--
dB
Drain Efficiency
(V
DD
= 50 V, P
out
= 150 W (PEP), f = 30; 30.001 MHz,
I
D
(Max) = 3.75 A)
40
45
--
%
Intermodulation Distortion (1)
(V
DD
= 50 V, P
out
= 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, I
DQ
= 250 mA)
IMD
(d3)
IMD
(d11)
--
--
32
60
30
--
dB
Load Mismatch
(V
DD
= 50 V, P
out
= 150 W (PEP), f1 = 30; 30.001 MHz,
I
DQ
= 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(V
DD
= 50 V, P
out
= 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I
DQ
= 3.0 A)
G
PS
IMD
(d3)
IMD
(d9 13)
--
--
--
23
50
75
--
--
--
dB
NOTE:
1. To MILSTD1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 30 MHz Test Circuit
C1 -- 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 -- 0.1
F Ceramic Chip or
Monolythic with Short Leads
C3 -- 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 -- 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 -- 10
F/100 V Electrolytic
L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0
H
L2 -- Ferrite Bead(s), 2.0
H
R1, R2 -- 51
/1.0 W Carbon
R3 -- 3.3
/1.0 W Carbon (or 2.0 x 6.8
/1/2 W in Parallel)
T1 -- 9:1 Broadband Transformer
T2 -- 1:9 Broadband Transformer
Board Material -- 0.062
Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
e
r
= 5
BIAS
0 12 V
+
+
C5
C6
C7
C8
C9
C10
50 V
C4
T2
D.U.T.
R3
T1
C2
R2
C1
C3
L1
RF
INPUT
L2
+
RF
OUTPUT
R1
2
REV 9
V
GS
, DRAIN-SOURCE VOL
T
AGE
(NORMALIZED)
Figure 2. 175 MHz Test Circuit
Figure 3. Capacitance versus
DrainSource Voltage
TYPICAL CHARACTERISTICS
Figure 4. GateSource Voltage versus
Case Temperature
BIAS
0 12 V
C1
C7
C9
C11
+50 V
L2
D.U.T.
L1
R2
L4
RF INPUT
C8
+
RF OUTPUT
R1
C4
C5
C2
C3
+
C6
C10
L3
RFC2
1000
500
200
100
50
0
20
0
10
20
30
40
50
C, CAP
ACIT
ANCE
(pF)
V
DS
, DRAINSOURCE VOLTAGE (VOLTS)
1.04
0.9
25
0
25
50
75
100
T
C
, CASE TEMPERATURE (
C)
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
C
iss
C
oss
C
rss
1
D
= 5 A
4 A
2 A
1 A
250 mA
100 mA
C1, C2, C8 -- Arco 463 or equivalent
C3 -- 25 pF, Unelco
C4 -- 0.1
F, Ceramic
C5 -- 1.0
F, 15 WV Tantalum
C6 -- 15 pF, Unelco J101
C7 -- 25 pF, Unelco J101
C9 -- Arco 262 or equivalent
C10 -- 0.05
F, Ceramic
C11 -- 15
F, 60 WV Electrolytic
D1 -- 1N5347 Zener Diode
L1 -- 3/4
, #18 AWG into Hairpin
L2 -- Printed Line, 0.200
x 0.500
L3 -- 1
, #16 AWG into Hairpin
L4 -- 2 Turns, #16 AWG, 5/16 ID
RFC1 -- 5.6
H, Choke
RFC2 -- VK2004B
R1 -- 150
, 1.0 W Carbon
R2 -- 10 k
, 1/2 W Carbon
R3 -- 120
, 1/2 W Carbon
Board Material -- 0.062
Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
r
= 5.0
R3
3
REV 9
Figure 5. DC Safe Operating Area
Figure 6. Common Source Unity Gain Frequency
versus Drain Current
Figure 7. Power Gain versus Frequency
Figure 8. Output Power versus Input Power
Figure 9. IMD versus P
out
100
10
1
2
20
200
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
2000
0
0
4
8
12
16
20
I
D
, DRAIN CURRENT (AMPS)
1000
V
DS
= 30 V
I D
, DRAIN CURRENT
(AMPS)
2
6
10
14
18
V
DS
= 15 V
T
C
= 25
C
30
5
2
5
10
30
100
200
f, FREQUENCY (MHz)
V
DD
= 50 V
I
DQ
= 250 mA
P
out
= 150 W
25
20
15
10
300
0
0
1
2
3
4
5
P
in
, INPUT POWER (WATTS)
200
100
0
0
5
10
15
20
25
300
200
100
f = 30 MHz
I
DQ
= 250 mA
f = 175 MHz
I
DQ
= 250 mA
V
DD
= 50 V
V
DD
= 50 V
40 V
25
55
0
40
80
120
160
200
P
out
, OUTPUT POWER (WATTS PEP)
35
45
55
25
35
45
I
DQ
= 250 mA
I
DQ
= 500 mA
d
3
d
5
d
3
d
5
20
60
100
140
180
V
DD
= 50 V, f = 30 MHz, TONE SEPARATION = 1 kHz
G
PS
, POWER GAIN (dB)
P out
, OUTPUT
POWER (W
A
TTS)
f T
, UNITY
GAIN FREQUENCY
(MHz)
IMD, INTERMODULA
TION
DIST
OR
TION
TYPICAL CHARACTERISTICS
4
REV 9
Figure 10. Series Equivalent Impedance
150
30
7.5
4
2
Z
OL
*
Z
in
15
f = 175 MHz
100
30
15
7.5
Z
o
= 10
V
DD
= 50 V
I
DQ
= 250 mA
P
out
= 150 W
Z
OL
* = Conjugate of the optimum load impedance
Z
OL
* =
into which the device output operates at a
Z
OL
* =
given output power, voltage and frequency.
f = 175 MHz
150
100
4
2
NOTE: Gate Shunted by 25 Ohms.
Table 1. Common Source SParameters (V
DS
= 50 V, I
D
= 2 A)
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
30
0.877
174
10.10
77
0.008
19
0.707
169
40
0.886
175
7.47
69
0.009
24
0.715
172
50
0.895
175
5.76
63
0.008
33
0.756
171
60
0.902
176
4.73
58
0.009
39
0.764
171
70
0.912
176
3.86
52
0.009
46
0.784
172
80
0.918
177
3.19
48
0.010
54
0.802
171
90
0.925
177
2.69
45
0.011
62
0.808
171
100
0.932
177
2.34
40
0.013
67
0.850
173
110
0.936
178
2.06
37
0.014
72
0.865
175
120
0.942
178
1.77
35
0.015
76
0.875
173
130
0.946
179
1.55
32
0.017
77
0.874
172
140
0.950
179
1.39
30
0.019
77
0.884
174
150
0.954
180
1.23
27
0.021
78
0.909
175
160
0.957
180
1.13
24
0.023
79
0.911
176
170
0.960
180
1.01
22
0.024
82
0.904
177
180
0.962
179
0.90
20
0.026
82
0.931
176
190
0.964
179
0.84
19
0.028
80
0.929
178
200
0.967
179
0.75
18
0.030
79
0.922
179
210
0.967
178
0.71
16
0.032
80
0.937
180
220
0.969
178
0.67
14
0.035
82
0.949
180
230
0.971
178
0.60
12
0.038
81
0.950
179
240
0.970
177
0.57
12
0.037
80
0.950
179
5
REV 9
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