The RF MOSFET Line
RF Power
Field Effect Transistors
NChannel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in pushpull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
Typical Performance at 400 MHz, 28 V:
Output Power -- 100 W
Gain -- 12 dB
Efficiency -- 60%
Low Thermal Resistance
Low Crss -- 10 pF Typ @ VDS = 28 Volts
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Excellent Thermal Stability; Suited for Class A
Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
65
Vdc
DrainGate Voltage (RGS = 1.0 M
)
VDGR
65
Vdc
GateSource Voltage
VGS
40
Vdc
Drain Current -- Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25
C (1)
Derate above 25
C
PD
270
1.54
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Operating Temperature Range
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
R
JC
0.65
C/W
(1) Total device dissipation rating applies only when the device is operated as an RF pushpull amplifier.
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF177
100 W, 28 V, 400 MHz
NCHANNEL
BROADBAND
RF POWER MOSFET
CASE 744A01, STYLE 2
2
1, 4
3
6
5, 8
7
Order this document
by MRF177/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 9
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic (1)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
--
--
2.0
mAdc
GateSource Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
--
--
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
VGS(th)
1.0
3.0
6.0
Vdc
DrainSource OnVoltage
(VGS = 10 V, ID = 3.0 A)
VDS(on)
--
--
1.4
Vdc
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
gfs
1.8
2.2
--
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
--
100
--
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
--
105
--
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Crss
--
10
--
pF
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
GPS
10
12
--
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
55
60
--
%
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
No Degradation
in Output Power
Before & After Test
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in pushpull amplifier
2
REV 9
TYPICAL CHARACTERISTICS
0
2
4
8
10
6
140
120
100
80
60
0
20
40
Pin, INPUT POWER (WATTS)
outP , OUTPUT
POWER
(W
A
TTS)
Figure 1. Output Power versus Input Power
225 MHz
400 MHz
VDD = 28 V
IDQ = 200 mA
f = 150 MHz
50
40
30
20
0
10
0
2
6
8
10
4
Pin, INPUT POWER (WATTS)
outP , OUTPUT
POWER
(W
A
TTS)
Figure 2. Output Power versus Input Power
f = 225 MHz
400 MHz
VDD = 13.5 V
IDQ = 200 mA
Figure 3. Output Power versus Supply Voltage
28
0
4
8
12
16
20
24
420
360
300
240
180
0
120
60
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Ciss
Coss
Crss
C
oss
, CAP
ACIT
ANCE
(pF)
C
rss
, C
iss
, CAP
ACIT
ANCE
(pF)
140
120
100
80
60
40
20
0
30
10
12
14
18
20
22
26
28
16
24
140
120
100
80
0
20
60
40
VDD, SUPPLY VOLTAGE (VOLTS)
outP , OUTPUT
POWER
(W
A
TTS)
Figure 4. Output Power versus Gate Voltage
Pin = 10 W
6.3 W
4 W
VGS, GATESOURCE VOLTAGE (VOLTS)
outP , OUTPUT
POWER
(W
A
TTS)
Figure 5. Capacitance versus Drain Voltage
5
4
3
1
0
1
3
5
2
2
4
100
90
80
50
40
0
20
30
10
70
60
f = 400 MHz
VDS = 28 V
Pin = CONSTANT
IDQ = 200 mA
0.1
0.2
1
0.4
2
10
4
20
100
1
2
4
10
6
20
40
100
60
TC = 25
C
VDS, DRAINSOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT
(AMPS)
D
Figure 6. DC Safe Operating Area
IDQ = 200 mA
f = 400 MHz
VGS = 0 V
f = 1 MHz
3
REV 9
Figure 7. Impedance or Admittance Coordinates
Zin
ZOL*
f = 400 MHz
100
Zo = 10
f
(MHz)
100
150
200
400
2.0 j11.5
2.05 j9.45
2.1 j7.5
2.35 + j0.4
3.5 j6
3.35 j5.34
3.3 j4.4
3.2 j1.38
Zin
Ohms
ZOL*
Ohms
ZOL*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
200
150
f = 400 MHz
200
150
100
VDD = 28 V IDQ = 200 mA Pout = 100 W
NOTE: Input and Output Impedance values given are measured
gatetogate and draintodrain respectively.
4
REV 9
D1
R3
R2
R1
C13
RF
INPUT
C1
T1
C2
C3
C5
C6
C7
MS1
MS2
R4
MRF177
MS3
MS4
C8
C10
C11
T4
RF
OUTPUT
C18
C17
L1
FERRITE BEAD
FERRITE BEAD
FERRITE BEAD
L2
C16
MICROSTRIP DETAIL
0.325
0.15
0.45
0.10
MS1
0.45
0.15
0.325
0.10
MS2
0.325
0.15
0.10
0.45
MS3
MS4
0.10
0.325
0.15
0.45
Figure 8. Test Circuit Electrical Schematic
C12
+
+
R5
T2
D.U.T.
C9
T3
VDD = 28 V
+
C14
C15
+
+
C4
C1, C12
110 pF JOHANSON OR EQUIVALENT
C2, C3, C5, C6, C10, C11
270 pF ATC 100 MIL CHIP CAP
C4, C9
120 pF
C7
36 pF CHIP CAP
C8
10 pF CHIP CAP
C13, C14
0.1
FD @ 50 Vdc
C15, C18
10
FD @ 50 Vdc
C16
500 pF BUTTON
C17
1000 pF UNCASED MICA
D1
1N5347B, 20 Vdc
L1
1TURN NO. 18, 0.25
, 2HOLE FERRITE BEAD
L2
81/2 TURNS NO. 18, CLOSE WOUND .375
DIA.
R1, R4, R5
10 k
@ 1/2 W RESISTOR
R2
10 k
, 10 TURN RESISTOR
R3
2.0 k
@ 1/2 W RESISTOR
T1
11/2 T, 50
COAX, .034
DIA. ON DUAL 0.5
FERRITE CORE
T2
2.0
25
COAX, .075
DIA.
T3
2.1
10
COAX, .075
DIA.
T4
4.0
50
COAX, .0865
DIA.
BOARD
Dielectric Thickness = 0.060
2oz Copper, CuClad, Teflon Fiberglass,
r = 2.55
5
REV 9
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