The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
Specified 28 Volt, 400 MHz Characteristics --
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
Emitter Ballast and Low Current Density for Improved MTBF
Common Emitter for Improved Stability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
30
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
3.0
Vdc
Collector Current -- Continuous
I
C
150
mAdc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
6.1
35
Watts
mW/
C
Storage Temperature Range
T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
28.5
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
30
--
--
Vdc
CollectorEmitter Breakdown Voltage (I
C
= 5.0 mAdc, V
BE
= 0)
V
(BR)CES
35
--
--
Vdc
CollectorBase Breakdown Voltage (I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
35
--
--
Vdc
EmitterBase Breakdown Voltage (I
E
= 1.0 mAdc, I
C
= 0)
V
(BR)EBO
3.0
--
--
Vdc
Collector Cutoff Current (V
CE
= 20 Vdc, I
B
= 0)
I
CEO
--
--
1.0
mAdc
(continued)
MRF313
1.0 W, 400 MHz
HIGHFREQUENCY
TRANSISTOR
NPN SILICON
CASE 305A01, STYLE 1
Order this document
by MRF313/D
SEMICONDUCTOR TECHNICAL DATA
1
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
ON CHARACTERISTICS
DC Current Gain (I
C
= 100 mAdc, V
CE
= 10 Vdc)
h
FE
20
60
150
--
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(I
C
= 100 mAdc, V
CE
= 20 Vdc, f = 200 MHz)
f
T
--
2.5
--
GHz
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
--
3.5
5.0
pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain (1)
(V
CC
= 28 Vdc, P
out
= 1.0 W, f = 400 MHz)
G
pe
15
16
--
dB
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 1.0 W, f = 400 MHz)
--
45
--
%
Series Equivalent Input Impedance
(V
CC
= 28 Vdc, P
out
= 1.0 W, f = 400 MHz)
Z
in
--
6.4 j4.8
--
Ohms
Series Equivalent Output Impedance
(V
CC
= 28 Vdc, P
out
= 1.0 W, f = 400 MHz)
Z
out
--
75 j45
--
Ohms
NOTE:
1. Class C
Figure 1. 400 MHz Power Gain Test Circuit
RF
INPUT
+28 V
C8
C6
C5
C4
C3
C2
L1
Z2
C9
C1
L4
+
-
L2
L3
DUT
R
+
Z3
Z1
C7
RF
OUTPUT
C1, C2, C4 -- 1.020 pF JOHANSON 9063
C3 -- 1.010 pF JOHANSON
C5 -- 150 pF Chip
C6 -- 0.1
F
C7, C8 -- 680 pF Feedthru
C9 -- 1.0
F TANTALUM
L1, L3 -- 5 Turns, AWG #20, 1/4
I.D.
L2 -- Ferrite Bead, FERROXCUBE
L2 --
No. 5659065/4B
L4 -- FERROXCUBE VK20020/4B
L4 --
Input/Output Connectors -- Type N
Board -- Glass Teflon,
= 2.56, t = 0.062
R -- 4.7 Ohms, 1/4 W
Z1 -- 2.0
x 0.1
MICROSTRIP LINE
Z2, Z3 -- 2.6
x 0.1
MICROSTRIP LINE
2
PACKAGE DIMENSIONS
CASE 305A01
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
K
F
4
2
3
1
D
C
H
J
A
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.200
0.220
5.08
5.59
C
0.095
0.130
2.41
3.30
D
0.055
0.065
1.40
1.65
F
0.025
0.035
0.64
0.89
H
0.040
0.050
1.02
1.27
J
0.003
0.007
0.08
0.18
K
0.435
---
11.05
---
M
45 REF
45 REF
_
_
3
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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