The RF Line
NPN Silicon
RF Power Transistor
. . . designed primarily for wideband largesignal output amplifier stages in the
100 to 500 MHz frequency range.
Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to
400 MHz Band
Minimum Gain = 7.3 dB @ 400 MHz
BuiltIn Matching Network for Broadband Operation Using Double Match
Technique
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
Characterized for 100
to
500 MHz
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
33
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current -- Continuous
Collector Current
-- Peak
I
C
9.0
12
Adc
Total Device Dissipation @ T
C
= 25
C (1)
Derate above 25
C
P
D
250
1.43
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 80 mAdc, I
B
= 0)
V
(BR)CEO
33
--
--
Vdc
CollectorEmitter Breakdown Voltage
(I
C
= 80 mAdc, V
BE
= 0)
V
(BR)CES
60
--
--
Vdc
EmitterBase Breakdown Voltage
(I
E
= 8.0 mAdc, I
C
= 0)
V
(BR)EBO
4.0
--
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 80 mAdc, I
C
= 0)
V
(BR)CBO
60
--
--
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
--
--
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 4.0 Adc, V
CE
= 5.0 Vdc)
h
FE
20
--
80
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
--
95
125
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
MRF327
80 W, 100 to 500 MHz
CONTROLLED "Q"
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 31601, STYLE 1
Order this document
by MRF327/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 1
ELECTRICAL CHARACTERISTICS continued
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS (Figure 1)
CommonEmitter Amplifier Power Gain
(V
CC
= 28 Vdc, P
out
= 80 W, f = 400 MHz)
G
PE
7.3
9.0
--
dB
Collector Efficiency
(V
CC
= 28 Vdc, P
out
= 80 W, f = 400 MHz)
50
60
--
%
Load Mismatch
(V
CC
= 28 Vdc, P
out
= 80 W, f = 400 MHz,
VSWR = 30:1 All Phase Angles)
No Degradation in Output Power
Figure 1. 400 MHz Test Circuit
C1, C2, C7, C8, C9 -- 1.020 pF Piston Trimmer (Johanson JMC 5501)
C3, C4 -- 36 pF ATC 100 mil Chip Capacitor
C5, C6 -- 43 pF ATC 100 mil Chip Capacitor
C10 -- 100 pF UNELCO
C11, C15 -- 0.1
F Erie Redcap
C12, C13 -- 680 pF Feedthru
C14 -- 1.0
F 50 V Tantalum
L1 -- 4 Turns #22 AWG Enameled, 3/16
ID Closewound with Ferroxcube
L1 --
Bead (#5659065/4B) on Ground End of Coil
L2 -- Ferroxcube VK20019/4B Ferrite Choke
L3 -- 7 Turns #18 AWG, 11/16
Long, Wound on a 100 k
2.0 Watt Resistor
L4 -- 6 Turns #20 AWG Enameled, 3/16
ID Closewound
L5 -- 4 Turns #22 AWG Enameled, 1/8
ID Closewound
Z1 -- Microstrip 0.2
W x 1.5
L
Z2 -- Microstrip 0.17
W x 1.16
L
Z3 -- Microstrip 0.17
W x 0.63
L
R1, R2 -- 10
2.0 Watt
Board -- Glass Teflon
r
= 2.56, t = 0.062
Input/Output Connectors Type N
DUT Socket Lead Frame Etched from 80milThick Copper
RF
INPUT
RF
OUTPUT
Z1
+
-
V
CC
28 Vdc
Z2
Z3
C1
C2
C3
C4
L1
DUT
C5
C6
C7
C8
C9
C10
C11
R1
L5
C12
R2
L2
C13
C14
C15
+
-
L3
L4
2
REV 1
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Frequency
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Input Power
G
PE
, POWER GAIN (dB)
15
P
out
= 80 W
V
CC
= 28 V
13
11
9
7
5
f, FREQUENCY (MHz)
500
400
300
200
100
V
CC
, SUPPLY VOLTAGE (VOLTS)
14
10
18
22
26
30
P
, OUTPUT
POWER (W
A
TTS)
out
120
100
80
60
40
20
f, FREQUENCY (MHz)
500
400
300
200
100
V
CC
= 28 V
5 W
P
in
= 15 W
7.5 W
10 W
P
, OUTPUT
POWER (W
A
TTS)
out
100
80
60
40
20
0
P
in
= 12 W
9 W
6 W
V
CC
, SUPPLY VOLTAGE (VOLTS)
14
10
18
22
26
30
P
, OUTPUT
POWER (W
A
TTS)
out
100
80
60
40
20
0
P
in
, INPUT POWER (WATTS)
5
0
10
15
20
P
, OUTPUT
POWER (W
A
TTS)
out
120
100
80
60
40
20
P
in
= 15 W
10 W
6 W
f = 100 MHz
V
CC
= 28 V
225 MHz
400 MHz
500 MHz
f = 225 MHz
f = 400 MHz
3
REV 1
Figure 7. Series Equivalent InputOutput Impedance
Z
in
10
-10
Z
OL
* = Conjugate of the optimum load impedance into which the device output operates at a given output power,
Z
OL
* =
voltage and frequency.
5
-5
Z
OL
*
5
15
20
25
225
P
out
= 80 W, V
CC
= 28 V
10
f = 100 MHz
f = 100 MHz
450
500
450
400
225
500
400
f
MHz
Z
in
Ohms
Z
OL
*
Ohms
100
225
400
450
500
0.33 + j0.26
0.56 + j1.64
1.3 + j3.29
1.58 + j2.53
0.82 + j2.9
2.23 - j3.3
2.15 - j0.66
1.27 + j1.0
1.27 + j1.54
1.3 + j2.35
4
REV 1
PACKAGE DIMENSIONS
CASE 31601
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
24.38
25.14
0.960
0.990
B
12.45
12.95
0.490
0.510
C
5.97
7.62
0.235
0.300
D
5.33
5.58
0.210
0.220
E
2.16
3.04
0.085
0.120
F
5.08
5.33
0.200
0.210
H
18.29
18.54
0.720
0.730
J
0.10
0.15
0.004
0.006
K
10.29
11.17
0.405
0.440
L
3.81
4.06
0.150
0.160
N
3.81
4.31
0.150
0.170
Q
2.92
3.30
0.115
0.130
R
3.05
3.30
0.120
0.130
U
11.94
12.57
0.470
0.495
4
3
2
1
F
D
R
Q
L
K
E
J
B
A
H
N
C
U
5
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 1
PDF 
ZIP