The RF Line
NPN Silicon Push-Pull
RF Power Transistor
. . . designed primarily for wideband largesignal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
Specified 28 Volt, 500 MHz Characteristics --
Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)
BuiltIn Input Impedance Matching Networks for Broadband Operation
PushPull Configuration Reduces Even Numbered Harmonics
Gold Metallization System for High Reliability
100% Tested for Load Mismatch
6
7
2
3
1, 4
5, 8
The MRF393 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a pushpull configuration.
PUSHPULL TRANSISTORS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
30
Vdc
CollectorBase Voltage
VCBO
60
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
16
Adc
Total Device Dissipation @ TC = 25
C (1)
Derate above 25
C
PD
270
1.54
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
Junction Temperature
TJ
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.65
C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF pushpull
amplifier.
MRF393
100 W, 30 to 500 MHz
CONTROLLED "Q"
BROADBAND PUSHPULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A01, STYLE 1
Order this document
by MRF393/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 7
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
V(BR)CEO
30
--
--
Vdc
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
V(BR)CES
60
--
--
Vdc
EmitterBase Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
--
--
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
--
100
--
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
40
75
95
pF
FUNCTIONAL TESTS (2) -- See Figure 1
CommonEmitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Gpe
7.5
8.5
--
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
50
55
--
%
Load Mismatch
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz,
VSWR = 30:1, all phase angles)
No Degradation in Output Power
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in pushpull amplifier.
Figure 1. 500 MHz Test Fixture
D.U.T.
Z1
C9
C11
L5
Z3
Z5
L6
C16
C7
C6
C4
C3
+ 28 V
L3
L4
C2
C1
Z2
Z4
Z6
C12
B1
B2
L1
C13
C14
C15
C10
L2
C8
C5
C1, C2, C7, C8 -- 240 pF 100 mil Chip Cap
C3 -- 15 pF 100 mil Chip Cap
C4 -- 24 pF 100 mil Chip Cap
C5 -- 33 pF 100 mil Chip Cap
C6 -- 12 pF 100 mil Chip Cap
C9, C13 -- 1000 pF 100 mil Chip Cap
C10, C14 -- 680 pF Feedthru Cap
C11, C15 -- 0.1
F Ceramic Disc Cap
C12, C16 -- 50
F 50 V
L1, L2 -- 0.15
H Molded Choke with Ferrite Bead
L3, L4 -- 21/2 Turns #20 AWG 0.200
ID
L5, L6 -- 31/2 Turns #18 AWG 0.200
ID
B1, B2 -- Balun 50
Semi Rigid Coax, 86 mil OD, 4
Long
Z1, Z2 -- 850 mil Long x 125 mil W. Microstrip
Z3, Z4 -- 200 mil Long x 125 mil W. Microstrip
Z5, Z6 -- 800 mil Long x 125 mil W. Microstrip
Board Material -- 0.0325
TeflonFiberglass,
r = 2.56,
Board Material --
1 oz. Copper Clad both sides.
2
REV 7
P
, OUTPUT
POWER
(W
A
TTS)
out
P
, OUTPUT
POWER
(W
A
TTS)
out
P
, OUTPUT
POWER
(W
A
TTS)
out
P
, OUTPUT
POWER
(W
A
TTS)
out
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
CLASS C
CLASS C
Figure 6. Series Equivalent Input/Output Impedance
Figure 7. Class AB Output Power versus
Input Power
140
120
100
80
60
40
20
0
20
18
16
14
12
10
8
6
4
2
0
Pin, INPUT POWER (WATTS)
80
60
40
20
0
20
18
16
14
12
10
8
6
4
2
0
Pin, INPUT POWER (WATTS)
10
70
50
30
120
100
80
60
40
20
12
VCC, SUPPLY VOLTAGE (VOLTS)
16
20
24
28
120
100
80
60
40
20
12
VCC, SUPPLY VOLTAGE (VOLTS)
16
20
24
28
140
120
100
80
60
40
20
0
20
18
16
14
12
10
8
6
4
2
0
Pin, INPUT POWER (WATTS)
f = 100 MHz
225 MHz
400 MHz
500 MHz
225 MHz
400 MHz
500 MHz
8 W
Pin = 10 W
Pin = 16 W
12 W
8 W
f = 500 MHz
VCC = 28 V
ICQ = 200 mA
P
, OUTPUT
POWER
(W
A
TTS)
out
6 W
f = 225 MHz
f = 500 MHz
VCC = 28 V
VCC = 13.5 V
f = 100 MHz
NOTE: Zin & ZOL* are given from basetobase
NOTE:
and collectortocollector respectively.
Zin
4
ZOL*
225
VCC = 28 V, Pout = 100 W
f = 100 MHz
400
225
500
400
2
2
4
6
8
2
4
6
8
500
f = 100 MHz
Zo = 20
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
f MHz
Zin
ZOL*
100
225
400
500
0.85 + j0
0.58 + j2.6
3.00 + j5.9
4.80 + j3.0
7.8 j5.6
5.0 j3.2
3.2 j0.6
2.9 + j1.2
3
REV 7
PACKAGE DIMENSIONS
CASE 744A01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
STYLE 1:
PIN 1. EMITTER (COMMON)
2. COLLECTOR
3. COLLECTOR
4. EMITTER (COMMON)
5. EMITTER (COMMON)
6. BASE
7. BASE
8. EMITTER (COMMON)
T
M
K
K
L
G
F
V
Q
4 PL
2 PL
U
4 PL
D
4 PL
R
5
6
7
8
1
2
3
4
B
M
A
M
0.76 (0.030)
B
M
A
SEATING
PLANE
N
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
22.60
23.11
0.890
0.910
B
9.52
10.03
0.375
0.395
C
6.65
7.16
0.262
0.282
D
1.60
1.95
0.063
0.077
E
2.94
3.40
0.116
0.134
F
2.87
3.22
0.113
0.127
G
16.51 BSC
0.650 BSC
H
4.01
4.36
0.158
0.172
J
0.07
0.15
0.003
0.006
K
4.34
4.90
0.171
0.193
L
12.45
12.95
0.490
0.510
M
45 NOM
45 NOM
N
1.051
11.02
0.414
0.434
Q
3.04
3.35
0.120
0.132
R
9.90
10.41
0.390
0.410
U
1.02
1.27
0.040
0.050
V
0.64
0.89
0.025
0.035
_
_
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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