www.docs.chipfind.ru
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for application as a highpower linear amplifier from 2.0 to
30 MHz.
Specified 12.5 Volt, 30 MHz Characteristics --
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
Intermodulation Distortion @ 100 W (PEP) --
IMD = 30 dB (Min)
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
20
Vdc
CollectorBase Voltage
V
CBO
45
Vdc
EmitterBase Voltage
V
EBO
3.0
Vdc
Collector Current -- Continuous
I
C
20
Adc
Withstand Current -- 10 s
--
30
Adc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
290
1.66
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.6
C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I
C
= 50 mAdc, I
B
= 0)
V
(BR)CEO
20
--
--
Vdc
CollectorEmitter Breakdown Voltage (I
C
= 200 mAdc, V
BE
= 0)
V
(BR)CES
45
--
--
Vdc
CollectorBase Breakdown Voltage (I
C
= 200 mAdc, I
E
= 0)
V
(BR)CBO
45
--
--
Vdc
EmitterBase Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
3.0
--
--
Vdc
Collector Cutoff Current (V
CE
= 16 Vdc, V
BE
= 0, T
C
= 25
C)
I
CES
--
--
10
mAdc
(continued)
MRF421
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 21111, STYLE 1
Order this document
by MRF421/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 1
ELECTRICAL CHARACTERISTICS continued
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
70
--
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 12.5 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
--
550
800
pF
FUNCTIONAL TESTS
CommonEmitter Amplifier Power Gain
(V
CC
= 12.5 Vdc, P
out
= 100 W, I
C(max)
= 10 Adc,
I
CQ
= 150 mAdc, f = 30, 30.001 MHz)
G
PE
10
12
--
dB
Collector Efficiency
(V
CC
= 12.5 Vdc, P
out
= 100 W, I
C(max)
= 10 Adc,
I
CQ
= 150 mA, f = 30, 30.001 MHz)
40
--
--
%
Intermodulation Distortion (1)
(V
CE
= 12.5 Vdc, P
out
= 100 W, I
C
= 10 Adc,
I
CQ
= 150 mA, f = 30, 30.001 MHz)
IMD
--
33
30
dB
NOTE:
1. To proposed EIA method of measurement. Reference peak envelope power.
Figure 1. 30 MHz Test Circuit Schematic
C1, C2, C4 -- 170780 pF, ARCO 469
C3 -- 80480 pF, ARCO 466
C5, C7, C10 -- ERIE 0.1
F, 100 V
C6 -- MALLORY 500
F @ 15 V Electrolytic
C9 -- 100
F, 15 V Electrolytic
C8 -- 1000 pF, 350 V UNDERWOOD
R1 -- 10
, 25 Watt Wirewound
R2 -- 10
, 1.0 Watt Carbon
CR1 -- 1N4997
L1 -- 3 Turns, #16 Wire, 5/16
I.D., 5/16
Long
L2 -- 12 Turns, #16 Enameled Wire Closewound, 1/4
I.D.
L3 -- 13/4 Turns, 1/8
Tubing, 3/8
I.D., 3/8
Long
L4 -- 10
H Molded Choke
L5 -- 10 Ferrite Beads -- FERROXCUBE #5659065/3B
+
BIAS
-
RF
INPUT
RF
OUTPUT
12.5 Vdc
+
-
R1
CR1
C5
C6
L4
L2
C7
C8
L5
C9
C10
C4
L3
C3
R2
C1
C2
L1
D.U.T.
2
REV 1
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
Figure 4. Power Gain versus Frequency
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. DC Safe Operating Area
Figure 7. Series Equivalent Impedance
P
, OUTPUT
POWER (W
A
TTS PEP)
out
160
16
12
8
4
0
P
in
, INPUT POWER (WATTS PEP)
V
CC
= 12.5 V
I
CQ
= 150 mA
TWO TONE TEST:
f = 30, 30.001 MHz
120
80
40
0
8
V
CC
, SUPPLY VOLTAGE (VOLTS)
10
12
14
16
IMD = -30 dB
I
CQ
= 150 mA
f = 30, 30.001 MHz
160
120
80
40
0
G
PE
, POWER GAIN (dB)
IMD, INTERMODULA
TION DIST
OR
TION (dB)
25
1.5
f, FREQUENCY (MHz)
2
3
5
7
10
30
20
15
20
15
10
5
0
-20
0
P
out
, OUTPUT POWER (WATTS PEP)
20
-25
-30
-35
-40
-45
V
CC
= 12.5 V
I
CQ
= 150 mA
P
out
= 100 W PEP
V
CC
= 12.5 V
I
CQ
= 150 mA
f = 30, 30.001 MHz
3RD ORDER
5TH ORDER
40
60
80
100
120
140
40
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2
I C
, COLLECT
OR CURRENT
(AMP)
20
5
10
20
50
100
T
C
= 25
C
0.4
0.8
2
4
8
P
, OUTPUT
POWER (W
A
TTS PEP)
out
Z
in
7.5
f = 2 MHz
15
30
V
CC
= 12.5 V
I
CQ
= 150 mA
P
out
= 100 W PEP
FREQUENCY
MHz
Z
in
Ohms
2.0
7.5
15
30
5.35 - j2.2
2.8 - j1.9
1.39 - j1.1
0.7 - j0.5
3
REV 1
Figure 8. Output Capacitance versus Frequency
Figure 9. Output Resistance versus Frequency
1.5
f, FREQUENCY (MHz)
2
3
5
7
10
30
20
15
20,000
0
V
CC
= 12.5 V
I
CQ
= 150 mA
P
out
= 100 W (PEP)
f, FREQUENCY (MHz)
2
3
5
7
10
30
20
15
2.5
1.5
V
CC
= 12.5 V
I
CQ
= 150 mA
P
out
= 100 W (PEP)
16,000
12,000
8000
4000
2
1.5
1
0.5
0
C out
, P
ARALLEL
EQUIV
ALENT
OUTPUT
CAP
ACIT
ANCE (pF)
R out
, P
ARALLEL
EQUIV
ALENT
OUTPUT
RESIST
ANCE (OHMS)
PACKAGE DIMENSIONS
CASE 21111
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
A
U
M
M
Q
R
B
1
4
3
2
D
K
E
SEATING
PLANE
C
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.960
0.990
24.39
25.14
B
0.465
0.510
11.82
12.95
C
0.229
0.275
5.82
6.98
D
0.216
0.235
5.49
5.96
E
0.084
0.110
2.14
2.79
H
0.144
0.178
3.66
4.52
J
0.003
0.007
0.08
0.17
K
0.435
---
11.05
---
M
45 NOM
45 NOM
Q
0.115
0.130
2.93
3.30
R
0.246
0.255
6.25
6.47
U
0.720
0.730
18.29
18.54
_
_
4
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 1
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