MRF587
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for use in highgain, lownoise, ultralinear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
Low Noise Figure --
NF = 3.0 dB (Typ) @ f = 500 MHz, I
C
= 90 mA
High Power Gain --
G
U(max)
= 16.5 dB (Typ) @ f = 500 MHz
Ion Implanted
All Gold Metal System
High f
T
-- 5.5 GHz
Low Intermodulation Distortion:
TB
3
= 70 dB
DIN = 125 dB
V
Nichrome Emitter Ballast Resistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
17
Vdc
CollectorBase Voltage
V
CBO
34
Vdc
EmitterBase Voltage
V
EBO
2.5
Vdc
Collector Current -- Continuous
I
C
200
mAdc
Total Device Dissipation @ T
C
= 50
C
Derate above T
C
= 50
C
P
D
5.0
33
Watts
mW/
C
Storage Temperature Range
T
stg
65 to +150
C
Junction Temperature
T
J
200
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 5.0 mAdc, I
B
= 0)
V
(BR)CEO
17
--
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 1.0 mAdc, I
E
= 0)
V
(BR)CBO
34
--
--
Vdc
EmitterBase Breakdown Voltage
(I
C
= 0, I
E
= 0.1 mAdc)
V
(BR)EBO
2.5
--
--
Vdc
Collector Cutoff Current
(V
CB
= 10 Vdc, I
E
= 0)
I
CBO
--
--
50
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
h
FE
50
--
200
--
NOTE:
(continued)
1. 300
s pulse on Tektronix 576 or equivalent.
MRF587
NF = 3.0 dB @ 0.5 GHz
HIGHFREQUENCY
TRANSISTOR
NPN SILICON
CASE 244A01, STYLE 1
Order this document
by MRF587/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
ELECTRICAL CHARACTERISTICS -- continued
(T
C
= 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (2)
(I
C
= 90 mAdc, V
CE
= 15 Vdc, f = 0.5 GHz)
f
T
--
5.5
--
GHz
CollectorBase Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
--
1.7
2.2
pF
FUNCTIONAL TESTS
Narrowband -- Figure 15
(I
C
= 90 mA, V
CC
= 15 V, f = 0.5 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
NF
G
NF
--
11
3.0
13
4.0
--
dB
Broadband -- Figure 16
(I
C
= 90 mA, V
CC
= 15 V, f = 0.3 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
NF
G
NF
--
--
6.3
11
--
--
dB
Triple Beat Distortion
(I
C
= 50 mA, V
CC
= 15 V, P
Ref
= 50 dBmV)
(I
C
= 90 mA, V
CC
= 15 V, P
Ref
= 50 dBmV)
TB
3
--
70
--
dB
DIN 45004
(I
C
= 90 mA, V
CC
= 15 V)
(I
C
= 90 mA, V
CC
= 15 V)
DIN
--
125
--
dB
V
Maximum Available Power Gain (3)
(I
C
= 90 mA, V
CE
= 15 Vdc, f = 0.5 GHz)
G
Umax
--
16.5
--
dB
NOTES:
2. Characterized on HP8542 Automatic Network Analyzer
3. G
Umax
=
Figure 1. Typical Noise Figure and
Associated Gain versus Frequency
Figure 2. Noise Figure versus Collector Current
10
0.2
0.1
f, FREQUENCY (GHz)
0.3
0.5
0.7
10
G
NF
, GAIN
A
T
NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
3
0
G
NF
V
CE
= 15 V
I
C
= 90 mA
9
8
7
6
5
4
3
2
1
0
0.9
6
9
12
15
18
21
24
27
30
50
0
I
C
, COLLECTOR CURRENT (mA)
NF
, NOISE FIGURE (dB)
6
5
4
3
2
1
100
150
200
V
CE
= 15 V
f = 300 MHz
N.F.
|S21|2
(1
|S11|2)(1|S22|2)
2
REV 6
Figure 3. G
Umax
versus Collector Current
Figure 4. GainBandwidth Product versus
Collector Current
f, GAINBANDWIDTH PRODUCT
(GHz)
T
50
0
I
C
, COLLECTOR CURRENT (mA)
6
5
4
3
2
1
100
150
200
50
0
I
C
, COLLECTOR CURRENT (mA)
20
100
150
200
16
12
8
4
0
G Umax
, MAXIMUM
A
V
AILABLE POWER GAIN (dB)
f = 500 MHz
V
CE
= 15 V
V
CE
= 15 V
f = 1000 MHz
Figure 5. Broadband Noise Figure
Figure 6. Junction Capacitance versus Voltage
Figure 7. 1.0 dB Compression Point versus
Collector Current
Figure 8. Third Order Intercept Point
TYPICAL PERFORMANCE
NF
, NOISE FIGURE (dB)
7
6
5
4
3
2
V
CC
= 15 V
f = 300 MHz
CIRCUIT PER
FIGURE 16
100
90
80
70
60
50
40
I
C
, COLLECTOR CURRENT (mA)
110
120
V
CB
, COLLECTOR BASE VOLTAGE (V)
CAP
ACIT
ANCE (pF)
10
1
2
7
5
3
2
1
3
5
7
10
C
ob
C
cb
V out
, OUTPUT
VOL
T
AGE (dBmV)
80
76
72
68
64
60
100
90
80
70
60
50
40
I
C
, COLLECTOR CURRENT (mA)
110
120
V
CC
= 15 V
f = 200 MHz
CIRCUIT PER
FIGURE 16
P
, OUTPUT
POWER (dBm)
out
P
, OUTPUT
POWER (dBm)
out
31
29
27
25
23
21
19
17
15
13
11
60
80
70
60
50
40
30
20
P
in
, INPUT POWER (dBm)
50
40
30
20
10
10
0
3RD ORDER
INTERCEPT
f
1
= 205 MHz
f
2
= 211 M Hz
V
CC
= 15 V
I
C
= 90 mA
+1 dB
COMP. PT.
CIRCUIT PER
FIGURE 16
3
REV 6
Figure 9. Second Order Distortion versus
Collector Current
Figure 10. Triple Beat Distortion versus
Collector Current
Figure 11. 35Channel XModulation Distortion
versus Collector Current
Figure 12. DIN 45004B versus Collector Current
TYPICAL PERFORMANCE (continued)
IMD, DIST
OR
TION (dB)
-48
I
C
, COLLECTOR CURRENT (mA)
-52
-56
-60
-64
-10
100
90
80
70
60
50
40
I
C
, COLLECTOR CURRENT (mA)
110
120
-20
-30
-40
-50
-60
XMD
35
, DIST
OR
TION (dB)
100
90
80
70
60
50
40
110
120
100
90
80
70
60
50
40
I
C
, COLLECTOR CURRENT (mA)
110
120
TB
-60
-64
-68
-72
-76
-80
3, DIST
OR
TION (dB)
140
130
120
110
100
90
V Ref
, OUTPUT
VOL
T
AGE (dB
V)
100
90
80
70
110
120
I
C
, COLLECTOR CURRENT (mA)
V
CE
= 15 V
P
Ref
= 50 dBmV
CH13
CH2
CHR
V
CC
= 15 V
P
Ref
= 50 dBmV
CH13
V
CC
= 15 V
CIRCUIT PER
FIGURE 16
V
CC
= 15 V
P
Ref
= 50 dBmV @ 200 MHz
CIRCUIT PER
FIGURE 16
TEST PER FIGURE 17
TEST PER FIGURE 18
CIRCUIT PER
FIGURE 16
TEST PER FIGURE 19
CIRCUIT PER
FIGURE 16
TEST PER FIGURE 20
4
REV 6
Figure 13. Input/Output Reflection
Coefficient versus Frequency (GHz)
Figure 14. Forward/Reverse Transmission
Coefficients versus Frequency (GHz)
V
CE
= 15 V
I
C
= 90 mA
+j50
+j100
+j150
+j250
+j500
-j500
-j250
-j150
-j100
-j50
-j25
-j10
0
+j10
+j25
90
60
30
0
-30
-60
-90
-120
-150
180
150
120
25
50
100 150 250 500
S
11
S
22
1
0.8
10
0.6
0.4
0.2
1
0.8
0.6
0.4
0.2
25
20
15
10
5
0.1 0.2
0.3
0.4
0.5
S
21
S
12
0.2
0.4
0.6
1
1
0.8
0.6
0.4
f = 0.1 GHz
f = 0.1 GHz
f = 0.1 GHz
f = 0.1 GHz
V
CE
I
C
f
S
11
S
21
S
12
S
22
V
CE
(Volts)
I
C
(mA)
f
(MHz)
|S
11
|
|S
21
|
|S
12
|
|S
22
|
5.0
30
100
200
400
600
800
1000
0.56
0.58
0.60
0.64
0.67
0.70
131
159
178
170
162
155
16.45
9.42
5.00
3.61
2.92
2.55
113
98
86
76
67
58
0.04
0.06
0.08
0.11
0.14
0.17
45
49
55
56
55
54
0.49
0.38
0.35
0.38
0.41
0.44
91
116
132
138
144
152
60
100
200
400
600
800
1000
0.53
0.56
0.59
0.63
0.66
0.69
141
164
178
169
161
155
17.89
10.05
5.31
3.82
3.09
2.67
110
97
85
76
67
58
0.04
0.05
0.09
0.12
0.15
0.18
50
55
60
59
57
55
0.47
0.39
0.38
0.40
0.44
0.47
102
126
141
146
153
160
90
100
200
400
600
800
1000
0.52
0.56
0.59
0.63
0.66
0.69
145
166
177
168
161
155
18.26
10.20
5.38
3.86
3.12
2.70
109
96
85
76
67
58
0.04
0.05
0.09
0.12
0.15
0.19
52
57
62
60
58
55
0.47
0.39
0.39
0.41
0.45
0.48
106
130
144
149
155
162
10
30
100
200
400
600
800
1000
0.53
0.53
0.55
0.59
0.62
0.65
122
153
175
173
165
158
18.36
10.63
5.71
4.16
3.37
2.95
115
100
87
78
68
59
0.04
0.05
0.08
0.10
0.13
0.15
48
51
57
58
57
55
0.50
0.36
0.33
0.35
0.39
0.42
75
96
112
119
127
136
60
100
200
400
600
800
1000
0.49
0.51
0.53
0.58
0.60
0.63
132
158
178
171
164
157
20.19
11.54
6.12
4.43
3.58
3.12
112
99
87
78
68
60
0.03
0.05
0.08
0.11
0.14
0.16
51
57
61
60
59
57
0.46
0.35
0.33
0.36
0.40
0.44
85
107
123
129
136
144
90
100
200
400
600
800
1000
0.48
0.50
0.53
0.57
0.60
0.63
135
160
179
171
164
157
20.82
11.77
6.22
4.50
3.64
3.18
111
98
86
78
68
60
0.03
0.05
0.08
0.11
0.14
0.17
53
59
63
62
59
57
0.45
0.34
0.33
0.36
0.41
0.44
88
111
126
131
139
147
(continued)
Table 1. CommonEmitter SParameters
5
REV 6
V
CE
I
C
f
S
11
S
21
S
12
S
22
V
CE
(Volts)
I
C
(mA)
f
(MHz)
|S
11
|
|S
21
|
|S
12
|
|S
22
|
15
30
100
200
400
600
800
1000
0.49
0.52
0.48
0.52
0.53
0.53
112
145
164
174
177
168
20.34
11.51
6.12
4.19
3.29
2.76
118
101
87
75
68
61
0.04
0.05
0.09
0.12
0.16
0.20
54
56
63
62
61
56
0.51
0.36
0.32
0.32
0.38
0.47
52
77
74
90
90
90
60
100
200
400
600
800
1000
0.45
0.49
0.45
0.50
0.51
0.51
122
150
166
175
177
168
22.14
12.24
6.45
4.42
3.47
2.91
115
99
86
75
68
62
0.03
0.05
0.09
0.13
0.16
0.20
56
60
65
63
61
55
0.45
0.33
0.30
0.32
0.38
0.46
60
86
83
99
98
96
90
100
200
400
600
800
1000
0.44
0.48
0.44
0.50
0.51
0.51
127
152
167
176
176
168
22.76
12.44
6.55
4.47
3.51
2.95
114
98
85
75
69
62
0.03
0.05
0.09
0.13
0.17
0.20
58
62
66
64
61
55
0.43
0.32
0.29
0.32
0.38
0.46
62
89
85
102
100
98
Table 1. CommonEmitter SParameters (continued)
Figure 15. Narrowband Test Fixture Schematic
500 MHz
C1, C2 -- 470 pF Chip (Ceramic)
C3, C4 -- 0.018
F Chip Capacitor
C5, C6 -- 0.1
F Mylar
C7, C8 -- 1.0
F, 25 Vdc Electrolytic
C9 -- 91 pF MiniUnelco (C9 Taped 3.68 cm from
C9 --
Collector Connection on TL4 as shown)
C10 -- 3545 pF Johanson Ceramic Capacitor, JMC
C10 --
5801 or Equivalent (C10 Taped 3.12 cm from
C10 --
Base Connection on TL1)
R1 -- 2.7 k
, 11/2 W
RFC1 -- 0.15
H Molded Choke
TL1, TL2 -- Z
o
= 26
, 0.0625 TFG as shown in
TL1, TL2
Photomaster
TL3, TL4 --
/4 Microstrip, Z
o
= 100
Y1, Y2 -- NType Connection (Female)
Y3, Y4 -- BNCType Connector (Female)
Board Material -- 0.0625
Thick Glass Teflon
r
= 2.5
RF
INPUT
RF
OUTPUT
R1
V
BB
V
CC
RFC1
C8
C6
+
Y3
Y4
+
C5
C7
TL3
TL4
TL1
TL2
C1
Y1
Y2
C10
3.12 cm
3.68 cm
C9
C4
C2
DUT
C3
6
REV 6
Figure 16. Broadband Test Circuit Schematic
C1, C7 -- 0.510 pF
C2, C6 -- 0.001
F
C3 -- 0.01
F
C4, C5 -- 0.01
F Feedthru
C8 -- 12 pF
R1 -- 12
1.0 W (2.024
on each emitter port)
R2 -- 1.8 k 1/8 W
R3 -- 2.2 k 1/8 W
L1 -- 1 Turn 0.012 dia #22 AWG
T1
(1)
-- 5 Turns Tapped at 2 Turns, #30 AWG
T2
(1)
-- 8 Turns Tapped at 3 Turns, #30 AWG
(1) Ferroxcube 135 CT050 3D3 Material
V
BB
V
CC
C4
C5
R2
DUT
T2
T1
R3
L1
C2
C1
C6
C7
C8
R1
C3
V
CC
= 15 V
Pg = 11 dB
f = 5-375 MHz
Z
o
= 75
RF
INPUT
RF
OUTPUT
Figure 17. Second Order Distortion Test
Figure 18. Triple Beat Distortion Test
Figure 19. Cross Modulation Distortion Test
Figure 20. DIN 45004B Intermodulation Test
P
Ref
f
2
- f
1
f
1
f
2
f
1
+ f
2
DISTORTION
P
Ref
DISTORTION
f
1
f
2
f
3
100%
MODULATION
15 kHz
P
Ref
DISTORTION
UNMODULATED
CARRIER
V
Ref
193 MHz
f
1
f
2
f
3
199 MHz
-60 dB
211 MHz
217 MHz
-6 dB
205 MHz
7
REV 6
PACKAGE DIMENSIONS
CASE 244A01
ISSUE A
MIN
MIN
MAX
MAX
MILLIMETERS
INCHES
DIM
A
B
C
D
E
F
J
K
M
P
S
T
U
7.06
6.20
15.24
0.66
1.40
1.52
0.10
11.17
2.74
1.40
2.92
7.26
6.50
16.51
0.86
1.65
0.15
1.27
3.35
1.78
3.68
0.278
0.244
0.600
0.026
0.055
0.060
0.004
0.440
0.108
0.055
0.115
0.286
0.256
0.650
0.034
0.065
0.006
0.050
0.132
0.070
0.145
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
45
NOM45
NOM
2
1
3
4
K
D
M
A
S
J
C
U
E
B
SEATING
PLANE
8-32 NC 2A
WRENCH FLAT
T
F
P
8
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 6
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