PA1186
800-960 MHz.
6 Watt
28v. GaAs Ultra Linear Power Amplifier
Outline Drawings
Maximum Ratings
Storage Temperature ....... -40C to +125C
DC Voltage .................................. +30 volts
RF Input Power .......................... +15 dBm.
Case Temperature ........................... +90C
* 850kHz from fc at power level of 30dBm. (IS-95)
** IP3 measured with 2 tones @+25dBm. per tone @ 1MHz apart
*** A 10 micro farad capacitor is required from pin 3 (+V) to ground
Min and max values from 0 to 85 degrees C
Features
(typical values)
High IP3 ............................................. +56.0 dBm.
Low NF ....................................................... 2.4 dB.
High Output Power ............................... +38 dBm.
Low Cost
100 Emlen Way Telford, Pa. 18969
Tel. (215) 723-6011 Fax. (215) 723-6015
Specifications subject to change without notice
r
e
t
e
m
a
r
a
P
l
a
c
i
p
y
T
e
u
l
a
V
.
n
i
M
e
u
l
a
V
.
x
a
M
e
u
l
a
V
s
t
i
n
U
y
c
n
e
u
q
e
r
F
0
0
8
0
6
9
.
z
H
M
n
i
a
G
0
.
9
2
0
.
7
2
.
B
d
s
s
e
n
t
a
l
F
n
i
a
G
3
.
0
-
/
+
.
B
d
.
p
m
o
c
.
B
d
1
@
t
u
o
P
0
.
8
3
0
.
6
3
.
m
B
d
e
r
u
g
i
F
e
s
i
o
N
4
.
2
5
.
3
.
B
d
*
)
W
B
.
z
H
k
0
3
(
R
P
C
A
0
.
0
5
-
.
c
B
d
)
t
u
p
t
u
O
/
t
u
p
n
I
(
R
W
S
V
1
:
2
/
1
:
5
.
1
1
:
5
.
2
/
1
:
2
*
*
)
e
n
o
t
o
w
t
(
3
P
I
0
.
6
5
+
0
.
0
5
+
.
m
B
d
*
*
*
d
e
r
i
u
q
e
R
y
l
p
p
u
S
0
0
0
1
/
8
2
+
0
0
2
1
/
8
2
+
.
A
m
/
.
v
Typical Performance
G a i n ( d B ) v s . F r e q u e n c y
2 6
2 8
3 0
3 2
8 0 0
8 5 0
9 6 0
N F (d B ) v s . F r e q u e n c y
1 .5
2
2 .5
3
8 0 0
9 0 0
9 6 0
P o u t ( d B m ) v s . F r e q u e n c y
3 6
3 7
3 8
3 9
4 0
8 0 0
8 8 0
9 6 0
V S W R v s . F r e q u e n c y
1
1 .5
2
2 .5
8 0 0
8 8 0
9 6 0
In
O u t
IP 3 (d B m ) v s . F r e q u e n c y
5 3
5 4
5 5
5 6
8 0 0
8 8 0
9 6 0
F r e q u e n c y in M H z .
--
u
-- 0
C --
n
-- +25
C --
-- +75
C
Rev: 033001
See Attached Document
PDF 
ZIP