Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch
SiBar
Thyristor Surge Protectors
PRODUCT: TVB200SA
DOCUMENT: 24304
PCN: 732781
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 1 OF 2
Specification Status: RELEASED
PHYSICAL
DESCRIPTION
A
B
C D* H J K
P
S
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX REF MIN
MAX
mm:
in:
4.06
.160
4.57
.180
3.30
.130
3.81
.150
1.90
.075
2.41
.095
1.96
.077
2.11
.083
.051
.002
.152
.006
0.15
.006
0.30
.012
0.76
.030
1.27
.050
0.51
.020
5.21
.205
5.59
.220
* D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P
Other Physical Characteristics
Form Factor:
SMB (Surface Mount DO-214 Package)
Lead Material:
Tin/lead finish
Encapsulation Material:
Epoxy, meets UL94 V-0 requirements
Solderability:
per MIL-STD-750, Method 2026
Solder Heat Withstand:
per MIL-STD-750, Method 2031
Solvent Resistance:
per MIL-STD-750, Method 1022
Mechanical Shock:
per MIL-STD-750, Method 2016
Tape and Reel packaging per EIA 481-1
Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch
SiBar
Thyristor Surge Protectors
PRODUCT: TVB200SA
DOCUMENT: 24304
PCN: 732781
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 2 OF 2
DEVICE RATINGS @ 25 C (Both Polarities)
Parameter
Symbol Value
Units
Off-State Voltage, Maximum at ID = 5 A
VDM
200 V
Non-Repetitive Peak Impulse Current 10x1000 sec
Double exponential waveform (Notes 1 and 2) 10/560 sec
10/160 sec
IPP
1
IPP
2
IPP
3
50
70
100
A
A
A
Critical Rate of Rise of On-State Current
Maximum 2x10 sec waveform, VOC=2.5kV, ISC=500A peak
di/dt
150
A/s
DEVICE THERMAL RATINGS
Storage Temperature Range
TSTG
-65 to 150
C
Operating Temperature Range
Blocking or conducting state
TA
-40 to 125
C
Overload Junction Temperature
Maximum; Conducting state only
TJ
+175 C
ELECTRICAL CHARACTERISTICS Both polarities (T
J
@ 25C unless otherwise noted)
Characteristics Symbol
Min
Typ
Max
Units
Breakover Voltage (+25C)
dV/dt = 100V/sec, I
SC
=1.0A, V
DC
= 1000V
VBO
----
260
320
V
Breakover Voltage (+25C)
f=60Hz, I
SC
=1.0Arms, V
OC
= 1000Vrms,
R=1.0 k
, t = 0.5 cycle (Note 2)
VBO
----
260
320
V
Breakover Voltage Temperature Coefficient
dVBO/dTJ
---- 0.08
-----
%/C
Off-State Current (VD1= 50V)
(VD2= VDM)
ID1
ID2
----
----
-----
-----
2.0
5.0
A
A
On-State Voltage (IT=1A)
PW
300 sec, Duty Cycle
2% (Note 2)
VT
---- -----
5.0 V
Breakover Current
IBO
---- 230
-----
mA
Holding Current (Note 2)
IH
175 350
----
mA
Critical Rate of Rise of Off-State Voltage
(Linear waveform, V
D
= 0.8 X Rated V
BO,
T
J
= +25C)
dv/dt 2000 ---- ---- V/s
Capacitance (f=1.0 Mhz, 50V
DC
bias, 1 Vrms)
(f=1.0 Mhz, 2V
DC
bias, 15mVrms)
C1
C2
----
----
20
50
----
pF
pF
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
VOLTAGE-CURRENT CHARACTERISTIC
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