1
M
e
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All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
4 Megabit (512k x 8-bit)
EEPROM MCM
79C0408
2004 Maxwell Technologies
All rights reserved.
10.13.04 Rev 15
Four 128k x 8-bit EEPROMs MCM
R
AD
-P
AK
radiation-hardened against natural
space radiation
Total dose hardness:
- > 100 krad (Si), depending upon space mission
Excellent Single Event Effects
- SEL > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
- SEU = 18 MeV/mg/cm
2
write mode
Package:
- 40 pin R
AD
-P
AK
flat pack
- 40 pin X-Ray Pak
TM
flat pack
- 40 pin Rad-Tolerant flat pack
High speed:
- 120, 150, and 200 ns maximum access times
available
Data Polling and Ready/Busy signal
Software data protection
Write protection by RES pin
High endurance
- 10,000 erase/write (in Page Mode),
- 10 year data retention
Page write mode: 1 to 128 byte page
Low power dissipation
- 80 mW/MHz active mode
- 440 W standby mode
D
ESCRIPTION
:
Maxwell Technologies' 79C0408 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, depending upon space mission. Using Maxwell Technol-
ogies' patented radiation-hardened R
AD
-P
AK
MCM
packaging technology, the 79C0408 is the first radiation-hard-
ened 4 Megabit MCM EEPROM for space applications. The
79C0408 uses four 1 Megabit high-speed CMOS die to yield a
4 Megabit product. The 79C0408 is capable of in-system elec-
trical Byte and Page programmability. It has a 128 bytes Page
Programming function to make its erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C0408, hardware data protection is provided with the
RES pin, in addition to noise protection on the WE signal.
Software data protection is implemented using the JEDEC
optional standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, the R
AD
-P
AK
package provides
greater than 100 krad (Si) radiation dose tolerance. This prod-
uct is available with screening up to Class K.
128K x 8
128K x 8
128K x 8
128K x 8
I/O
0-7
A
0-16
WE
R/B
RES
OE
CE
1
CE
2
CE
3
CE
4
F
EATURES
:
Logic Diagram
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
1. V
IN
MIN
= -3.0V
FOR
PULSE
WIDTH
<50
NS
.
T
ABLE
1. 79C0408 P
IN
D
ESCRIPTION
P
IN
S
YMBOL
D
ESCRIPTION
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
A0 to A16
Address Input
17-19, 22-26
I/O0 to I/O7
Data Input/Output
29
OE
Output Enable
2, 3, 39, 38
CE1-4
Chip Enable 1 through 4
34
WE
Write Enable
1, 27, 40
VCC
Power Supply
4, 20, 21, 37
VSS
Ground
5
RDY/BUSY
Ready/Busy
35
RES
Reset
T
ABLE
2. 79C0408 A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Supply Voltage
V
CC
-0.6
7.0
V
Input Voltage
V
IN
-0.5
1
7.0
V
Package Weight
RP
23
Grams
RT
10
Thermal Resistance ( RP Package)
Tjc
7.3
C/W
Operating Temperature Range
T
OPR
-55
125
C
Storage Temperature Range
T
STG
-65
150
C
T
ABLE
3. 79C0408 R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Supply Voltage
V
CC
4.5
5.5
V
Input Voltage
RES_PIN
V
IL
V
IH
V
H
-0.3
1
2.2
V
CC
-0.5
1. V
IL
min = -1.0V for pulse width < 50 ns
0.8
V
CC
+0.3
V
CC
+1
V
V
V
Case Operating Temperature
T
C
-55
125
C
M
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
T
ABLE
4. 79C0408 C
APACITANCE1
(T
A
= 25
C, f = 1 MHz)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Input Capacitance: V
IN
= 0 V
1
WE
CE
1-4
OE
A
0-16
1. Guaranteed by design.
C
IN
--
--
--
--
24
6
24
24
pf
Output Capacitance: V
OUT
= 0 V
1
C
OUT
48
pF
T
ABLE
5. D
ELTA
P
ARAMETERS
P
ARAMETER
C
ONDITION
I
CC1
+ 10% of value in Table 6
I
CC2
+ 10% of value in Table 6
I
CC3
+ 10% of value in Table 6
I
CC4
+ 10% of value in Table 6
T
ABLE
6. 79C0408 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V 10%, T
A
= -55
TO
+125C)
P
ARAMETER
T
EST
C
ONDITION
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NITS
Input Leakage Current
V
CC
= 5.5V, V
IN
= 5.5V
1
I
IL
1, 2, 3
A
CE
1-4
--
2
1
OE, WE
--
8
A
0-16
--
8
Output Leakage Current V
CC
= 5.5V, V
OUT
= 5.5V/0.4V
I
LO
1, 2, 3
--
8
A
Standby V
CC
Current
CE = V
CC
I
CC1
--
80
A
CE = V
IH
I
CC2
--
4
mA
Operating V
CC
Current
2
I
OUT
= 0mA, Duty = 100%,
Cycle = 1 s at V
CC
= 5.5V
I
CC3
1, 2, 3
--
15
mA
I
OUT
= 0mA, Duty = 100%,
Cycle = 150ns at V
CC
= 5.5V
I
CC4
1, 2, 3
--
50
Input Voltage
RES_PIN
V
IL
1, 2, 3
--
0.8
V
V
IH
2.2
--
V
H
V
CC
-0.5
--
Output Voltage
I
OL
= 2.1 mA
V
OL
1, 2, 3
--
0.4
V
I
OH
= -0.4 mA
V
OH
2.4
--
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
1. I
LI
on RES = 100 uA max.
2. Only one CE\ Active.
T
ABLE
7. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATIONS1
(V
CC
= 5V 10%, T
A
= -55
TO
+125C)
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Address Access Time CE = OE = V
IL
, WE = V
IH
-120
-150
-200
t
ACC
9, 10, 11
--
--
--
120
150
200
ns
Chip Enable Access Time OE = V
IL
, WE = V
IH
-120
-150
-200
t
CE
9, 10, 11
--
--
--
120
150
200
ns
Output Enable Access Time CE = V
IL
, WE = V
IH
-120
-150
-200
t
OE
9, 10, 11
0
0
0
75
75
125
ns
Output Hold to Address Change CE = OE = V
IL
, WE = V
IH
-120
-150
-200
t
OH
9, 10, 11
0
0
0
--
--
--
ns
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
2. t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
t
DF
9, 10, 11
0
0
0
50
50
60
ns
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
t
DFR
9, 10, 11
0
0
0
300
350
450
RES to Output Delay CE = OE = V
IL
, WE = V
IH
3
-120
-150
-200
3. Guaranteed by design.
t
RR
9, 10, 11
--
--
--
400
450
650
ns
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
T
ABLE
8. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS
FOR
W
RITE
O
PERATIONS
(V
CC
= 5V 10%, T
A
= -55
TO
+125C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN1
M
AX
U
NIT
Address Setup Time
-120
-150
-200
t
AS
9, 10, 11
0
0
0
--
--
--
ns
Chip Enable to Write Setup Time (WE Controlled)
-120
-150
-200
t
CS
9, 10, 11
0
0
0
--
--
--
ns
Write Pulse Width
CE Controlled
-120
-150
-200
WE Controlled
-120
-150
-200
t
CW
t
WP
9, 10, 11
200
250
350
200
250
350
--
--
--
--
--
--
ns
Address Hold Time
-120
-150
-200
t
AH
9, 10, 11
150
150
200
--
--
--
ns
Data Setup Time
-120
-150
-200
t
DS
9, 10, 11
75
100
150
--
--
--
ns
Data Hold Time
-120
-150
-200
t
DH
9, 10, 11
10
10
10
--
--
--
ns
Chip Enable Hold Time (WE Controlled)
-120
-150
-200
t
CH
9, 10, 11
0
0
0
--
--
--
ns
Write Enable to Write Setup Time (CE Controlled)
-120
-150
-200
t
WS
9, 10, 11
0
0
0
--
--
--
ns
Write Enable Hold Time (CE Controlled)
-120
-150
-200
t
WH
9, 10, 11
0
0
0
--
--
--
ns
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
Output Enable to Write Setup Time
-120
-150
-200
t
OES
9, 10, 11
0
0
0
--
--
--
ns
Output Enable Hold Time
-120
-150
-200
t
OEH
9, 10, 11
0
0
0
--
--
--
ns
Write Cycle Time
2
-120
-150
-200
t
WC
9, 10, 11
--
--
--
10
10
10
ms
Data Latch Time
-120
-150
-200
t
DL
9, 10, 11
250
300
400
--
--
--
ns
Byte Load Window
-120
-150
-200
t
BL
9, 10, 11
100
100
200
--
--
--
s
Byte Load Cycle
-120
-150
-200
t
BLC
9, 10, 11
0.55
0.55
0.95
30
30
30
s
Time to Device Busy
-120
-150
-200
t
DB
9, 10, 11
100
120
170
--
--
--
ns
Write Start Time
3
-120
-150
-200
t
DW
9, 10, 11
150
150
250
--
--
--
ns
RES to Write Setup Time
-120
-150
-200
t
RP
9, 10, 11
100
100
200
--
--
--
s
V
CC
to RES Setup Time
4
-120
-150
-200
t
RES
9, 10, 11
1
1
3
--
--
--
s
1. Use this divice in a longer cycle than this value.
2. t
WC
must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
T
ABLE
8. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS
FOR
W
RITE
O
PERATIONS
(V
CC
= 5V 10%, T
A
= -55
TO
+125C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN1
M
AX
U
NIT
M
e
m
o
r
y
7
All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F
IGURE
1. R
EAD
T
IMING
W
AVEFORM
3. Next read or write operation can be initiated after t
DW
if polling techniques or RDY/BUSY are used.
4. Gauranteed by design.
T
ABLE
9. 79C0408 M
ODE
S
ELECTION
1, 2
1. X = Don't care.
2. Refer to the recommended DC operating conditions.
P
ARAMETER
CE
3
3. For CE
1-4
only one CE can be used ("on") at a time.
OE
WE
I/O
RES
RDY/BUSY
Read
V
IL
V
IL
V
IH
D
OUT
V
H
High-Z
Standby
V
IH
X
X
High-Z
X
High-Z
Write
V
IL
V
IH
V
IL
D
IN
V
H
High-Z --> V
OL
Deselect
V
IL
V
IH
V
IH
High-Z
V
H
High-Z
Write Inhibit
X
X
V
IH
--
X
--
X
V
IL
X
--
X
--
Data Polling
V
IL
V
IL
V
IH
Data Out (I/O7)
V
H
V
OL
Program
X
X
X
High-Z
V
IL
High-Z
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F
IGURE
2. B
YTE
W
RITE
T
IMING
W
AVEFORM
(1) (WE C
ONTROLLED
)
M
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F
IGURE
3. B
YTE
W
RITE
T
IMING
W
AVEFORM
(2) (CE C
ONTROLLED
)
M
e
m
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10
All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F
IGURE
4. P
AGE
W
RITE
T
IMING
W
AVEFORM
(1) (WE C
ONTROLLED
)
M
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F
IGURE
5. P
AGE
W
RITE
T
IMING
W
AVEFORM
(2) (CE C
ONTROLLED
)
F
IGURE
6.
D
ATA
P
OLLING
T
IMING
W
AVEFORM
M
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2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F
IGURE
7. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(1) (
IN
PROTECTION
MODE
)
F
IGURE
8. S
OFTWARE
D
ATA
P
ROTECTION
T
IMING
W
AVEFORM
(2) (
IN
NON
-
PROTECTION
MODE
)
Toggle Bit Waveform
EEPROM A
PPLICATION
N
OTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and
details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 s for the second byte. In the same manner each additional byte
of data can be loaded within 30 s. In case CE and WE are kept high for 100 s after data input, the EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
M
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2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
has high impedance except in write cycle and is lowered to V
OL
after the first write signal. At the-end of a write cycle,
the RDY/Busy signal changes state to high impedance.
RES Signal
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping
RES low when V
CC
is switched. RES should be kept high during read and programming because it doesn't provide a
latch function.
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
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2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in
programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.
2. Data Protection at V
CC
on/off
When V
CC
is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to
programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable
state during V
CC
on/off by using a CPU reset signal to RES pin.
RES should be kept at V
SS
level when V
CC
is turned on or off. The EEPROM breaks off programming operation when RES
becomes low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES
should be kept high for 10 ms after the last data input.
3. Software Data Protection
The software data protection function is to prevent unintentional programming caused by noise generated by external circuits.
In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the non-
protection mode to the protection mode.
10mS min
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All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protec-
tion mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written.
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2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
F40-01
Note: All dimensions in inches
40 P
IN
R
AD
-P
AK
P
ACKAGE
D
IMENSIONS
S
YMBOL
D
IMENSION
M
IN
N
OM
M
AX
A
0.248
0.274
0.300
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
--
0.850
0.860
E
0.985
0.995
1.005
E1
--
--
1.025
E2
0.890
0.895
--
E3
0.000
0.050
--
e
0.040 BSC
L
0.380
0.390
0.400
Q
0.214
0.245
0.270
S1
0.005
0.038
--
N
40
Pin #1 ID
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2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
40 P
IN
X-R
AY
-P
AKTM
F
LAT
P
ACKAGE
D
IMENSIONS
NOTE: All Dimensions in Inches
S
YMBOL
D
IMENSION
M
IN
N
OM
M
AX
A
0.248
0.274
0.300
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
0.840
0.850
0.860
E
0.985
0.995
1.005
E2
--
0.785
--
E3
--
0.105
--
e
0.040 BSC
L
0.340
0.350
0.400
Q
0.050
0.065
0.075
S1
--
0.035
--
N
40
M
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2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
40 P
IN
R
AD
-T
OLERANT
F
LAT
P
ACKAGE
D
IMENSIONS
S
YMBOL
D
IMENSION
M
IN
N
OM
M
AX
A
0.202
0.224
0.246
b
0.013
0.015
0.022
c
0.006
0.008
0.010
D
--
0.850
0.860
E
0.985
0.995
1.005
E1
--
--
1.025
E2
0.890
0.895
--
E3
0.000
0.050
--
e
0.040 BSC
L
0.380
0.390
0.400
Q
0.190
0.220
0.270
S1
0.005
0.038
--
N
40
NOTE: All Dimensions in Inches
M
e
m
o
r
y
19
All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
Important Notice:
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies
functionality by testing key parameters either by 100% testing, sample testing or characterization.
The specifications presented within these data sheets represent the latest and most accurate information available to
date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no
responsibility for the use of this information.
Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems
without express written approval from Maxwell Technologies.
Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Tech-
nologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
M
e
m
o
r
y
20
All data sheets are subject to change without notice
2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
10.13.04 Rev 15
Product Ordering Options
Model Number
Feature
Option Details
79C0408
XX
F
X
-XX
Access Time
Screening Flow
Package
Radiation Feature
Base Product
Nomenclature
12 = 120 ns
15 = 150 ns
20 = 200 ns
Multi Chip Module (MCM)
K = Maxwell Class K
H = Maxwell Class H
I = Engineering (testing @-55C,
+25C and +125C)
E = Engineering (testing @ +25C
F = Flat Pack
RP = R
AD
-P
AK
package
RT1 = Guaranteed to 10 krad at
die level
RT2 = Guaranteed to 25 krad at
die level
RT4 = Guaranteed to 40 krad at
die level
4 Megabit (512k x 8-bit) EEPROM
MCM
XP = X-Ray Pak
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