1N4448
500mW 100Volt
Switching Diode
DO-35
Features
Low Current Leakage
Metalurgically Bonded Construction
Low Cost
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.166
---
4.2
B
---
.079
---
2.00
C
---
.020
---
.52
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +150
C
Maximum Thermal Resistance; 35
C/W Junction To Ambient
Electrical Characteristics @ 25
C Unless Otherwise Specified
Reverse Voltage
V
R
75V
Peak Reverse
Voltage
V
RM
100V
Average Rectified
Current
I
O
150mA Resistive Load
f >= 50Hz
Power Dissipation
P
TOT
500mW
Junction
Temperature
T
J
150
C
Peak Forward Surge
Current
I
FSM
500mA t<1s
Instantaneous
Forward Voltage
V
F
1.0V(MAX)
I
FM
= 100mA;
0.62-0.72V
I
FM
= 5.0mA
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
25nA
50
A
V
R
=20Volts
T
J
= 25
C
T
J
= 150
C
Typical Junction
Capacitance
C
J
4pF
Measured at
1.0MHz, V
R
=4.0V
Reverse Recovery
Time
T
rr
4nS
I
F
=10mA
V
R
= 6V
R
L
=100
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
D
Cathode
Mark
www.
mccsemi
.com
5uA V
R
=75Volts
omponents
21201 Itasca Street Chatsworth
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M C C
1N4448
Admissable Power Dissipation - MilliWatts
versus
Ambient Temperature -
C
Figure 2
Forward Derating Curve
0
175
50
75
100
125
0
100
200
300
Single Phase, Half Wave
60Hz Resistive or Inductive Load
MilliWatts
C
150
400
500
600
Junction Capacitance - pF
versus
Reverse Voltage - Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical Forward Characteristics
40
60
200
100
MilliAmps
.4
.6
.8
1.0
1.2
1.4
.1
.2
.4
.6
1
2
4
6
10
20
25
C
Volts
Figure 3
Junction Capacitance
.1
.2
1
.4
2
10
20
40
4
100 200
.1
.2
.6
1
2
10
pF
Volts
6
4
.4
400
1000
T
J
=25
C
M C C
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mccsemi
.com
1N4448
1 100
4
0
100
200
300
8
Figure 5
Peak Forward Surge Current
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
MilliAmps
Cycles
2
6
10 20
60 80
40
400
500
600
Figure 4
Typical Reverse Characteristics
Instantaneous Reverse Leakage Current - NanoAmperes
versus
Junction Temperature -
C
T
J
40
60
200
100
NanoAmps
20
120
40
60
80
100
.1
.2
.4
.6
1
2
4
6
10
20
T
A
=25
C
400
600
1000
140
T
A
=100
C
M C C
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mccsemi
.com
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