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Электронный компонент: 548A

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Features
l
Through Hole Package
l
150
o
C Junction Temperature
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Polarity: indicated as above.
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage BC546
BC547
BC548
V
CEO
65
45
30
V
Collector-Base Voltage BC546
BC547
BC548
V
CBO
80
50
30
V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current(DC) I
C
100 mA
Power Dissipation@T
A
=25
o
C P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air 200
o
C/W
Thermal Resistance, Junction to
Case
83.3
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C
BC546,B
BC547,A,B,C
BC548,A,B,C
NPN Silicon
Amplifier Transistor
625mW
Pin Configuration
Bottom View
C B
E
www.
mccsemi
.com
R
q
JC
R
q
JA
TO-92
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
DIMENSIONS
omponents
21201 Itasca Street Chatsworth
!"#
$ % !"#
M C C
www.
mccsemi
.com
M C C
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
A, V
CE
= 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
(I
C
= 2.0 mA, V
CE
= 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
(I
C
= 100 mA, V
CE
= 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
h
FE
--
--
--
110
110
110
110
200
420
--
--
--
90
150
270
--
--
--
180
290
520
120
180
300
--
--
--
450
800
800
220
450
800
--
--
--
--
CollectorEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
--
---
0.3
V
BaseEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
V
BE(sat)
--
1.0
--
V
BaseEmitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
V
BE(on)
0.55
--
--
--
0.7
0.77
V
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
BC546
BC547
BC548
f
T
150
150
150
300
300
300
--
--
--
MHz
Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
C
obo
--
1.7
4.5
pF
Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
C
ibo
--
10
--
pF
SmallSignal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
h
fe
125
125
125
240
450
--
--
220
330
600
500
900
260
500
900
--
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2 k
W
,
BC546
f = 1.0 kHz,
f = 200 Hz)
BC547
BC548
NF
--
--
--
2.0
2.0
2.0
10
10
10
dB
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
BC546
(I
C
= 1.0 mA, I
B
= 0)
BC547
BC548
V
(BR)CEO
65
45
30
--
--
--
--
--
--
V
CollectorBase Breakdown Voltage
BC546
(I
C
= 100
Adc)
BC547
BC548
V
(BR)CBO
80
50
30
--
--
--
--
--
--
V
EmitterBase Breakdown Voltage
BC546
(I
E
= 10
m
A, I
C
= 0)
BC547
BC548
V
(BR)EBO
6.0
6.0
6.0
--
--
--
--
--
--
V
BC546 thru BC548C
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mccsemi
.com
M C C
BC546 thru BC548C
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
I
C
, COLLECTOR CURRENT (mAdc)
0.2
0.5
1.0
10
20
50
0.2
100
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
2.0
5.0
200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
h FE
, NORMALIZED DC CURRENT
GAIN
V
,
VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.5
1.0
10
20
50
2.0
100
70
30
7.0
5.0
3.0
0.7
0.3
0.1
0.2
1.0
10
100
T
A
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE
= 10 V
T
A
= 25
C
-55
C to +125
C
T
A
= 25
C
I
C
= 50 mA
I
C
= 100 mA
I
C
= 200 mA
I
C
=
20 mA
I
C
=
10 mA
1.0
BC547/BC548
Figure 5. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
0.4 0.6
1.0
10
20
1.0
2.0
6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0
10
20
2.0
50
30
7.0
5.0
3.0
0.5
V
CE
= 10 V
T
A
= 25
C
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
(MHz)
T
0.8
4.0
8.0
T
A
= 25
C
C
ob
C
ib
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mccsemi
.com
M C C
BC546 thru BC548C
BC547/BC548
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
I
C
, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
100
0.2
0.2
0.5
0.2
1.0
10
200
T
A
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 5.0 V
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
0.2
2.0
10
200
1.0
T
A
= 25
C
200 mA
50 mA
I
C
=
10 mA
h FE
, DC CURRENT
GAIN (NORMALIZED)
V
,
VOL
T
AGE (VOL
TS)
V
CE
= 5 V
T
A
= 25
C
0
0.5
2.0
5.0
20
50
100
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
0.5
5.0
20
50
100
-55
C to 125
C
VB
for V
BE
BC546
Figure 11. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
0.1 0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
50 100
5.0
V
CE
= 5 V
T
A
= 25
C
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT T
0.5
5.0
20
T
A
= 25
C
C
ob
C
ib