Features
l
Through Hole Package
l
150
o
C Junction Temperature
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Polarity: indicated as above.
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage BC556
BC557
BC558
V
CEO
-65
-45
-30
V
Collector-Base Voltage BC556
BC557
BC558
V
CBO
-80
-50
-30
V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current(DC) I
C
-100 mA
Power Dissipation@T
A
=25
o
C P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air 200
o
C/W
Thermal Resistance, Junction to
Case
83.3
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C
BC556,B
BC557,A,B,C
BC558,B
PNP Silicon
Amplifier Transistor
625mW
TO-92
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
DIMENSIONS
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Pin Configuration
Bottom View
C B
E
R
q
JC
R
q
JA
omponents
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M C C
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
65
45
30
--
--
--
--
--
--
V
Collector Base Breakdown Voltage
(IC = 100
Adc)
BC556
BC557
BC558
V(BR)CBO
80
50
30
--
--
--
--
--
--
V
Emitter Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
5.0
5.0
5.0
--
--
--
--
--
--
V
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 V)
BC557A
BC556B/557B/558B
BC557C
(IC = 2.0 mAdc, VCE = 5.0 V)
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
(IC = 100 mAdc, VCE = 5.0 V)
BC557A
BC556B/557B/558B
BC557C
hFE
--
--
--
120
120
120
120
180
420
--
--
--
90
150
270
--
--
--
170
290
500
120
180
300
--
--
--
500
800
800
220
460
800
--
--
--
--
Collector Emitter Saturation Voltage
(IC = 100mAdc, IB = 5.0 mAdc)
VCE(sat)
--
---
0.3
V
Base Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0mAdc)
VBE(sat)
--
1.0
--
V
BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
--
0.62
0.7
0.7
0.82
V
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC556
BC557
BC558
fT
--
--
--
280
320
360
--
--
--
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
--
3.0
6.0
pF
M C C
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BC556 thru BC558B
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
h
FE
, NORMALIZED DC CURRENT
GAIN
V
,
VOL
T
AGE
(VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (V)
VB
, TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.7
0.5
0.3
0.2
10
100
1.0
TA = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25
C
55
C to +125
C
IC = 100 mA
IC = 20 mA
0.5 1.0
2.0
5.0 10
20
50
100 200
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
IC = 200 mA
IC = 50 mA
IC =
10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.5
C, CAP
ACIT
ANCE
(pF)
f
,
CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
T
TA = 25
C
Cob
Cib
0.6
1.0
2.0
4.0 6.0
10
20 30 40
150
1.0
2.0 3.0
5.0
10
20
30
50
VCE = 10 V
TA = 25
C
TA = 25
C
1.0
M C C
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BC556 thru BC558B
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 8. "On" Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
200
0.2
0.2
0.5
0.2
1.0
10
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
VB
, TEMPERA
TURE COEFFICIENT
(mV/
C)
0.2
2.0
10
200
1.0
TJ = 25
C
IC =
10 mA
h
FE
, DC CURRENT
GAIN (NORMALIZED)
V
,
VOL
T
AGE
(VOL
TS)
VCE = 5.0 V
TA = 25
C
0
0.5
2.0
5.0
20
50
100
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5
5.0
20
50
100
55
C to 125
C
VB for VBE
2.0 5.0
20
50 100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
100
VCE = 5.0 V
C, CAP
ACIT
ANCE
(pF)
f
,
CURRENTGAIN BANDWIDTH PRODUCT T
0.5
5.0
20
TJ = 25
C
Cob
Cib
8.0
50 mA
200 mA
M C C
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BC556 thru BC558B
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