Features
l
Planar Die construction
l
410mW Power Dissipation
l
Zener Voltages from 2.4V - 39V
l
Ideally Suited for Automated Assembly Processes
Mechanical Data
l
Case: SOD-123 Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Approx. Weight: 0.008 gram
l
Mounting Position: Any
l
Storage & Operating Junction Temperature: -55
o
C to +150
o
C
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Zener Current I
F
100 mA
Maximum Forward
Voltage
V
F
1.2 V
Power Dissipation
(Notes A)
P
(AV)
410 mWatt
Peak Forward Surge
I
FSM
2.0 Amps
NOTES:
BZT52C2V4
THRU
BZT52C39
410 mW
Zener Diodes
2.4 to 39 Volts
M C C
www.
mccsemi
.com
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent
Current (Notes B)
square wave, duty cycle = 4 pulses per minute maximum
.
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.140
.152
3.55
3.85
B
.100
.112
2.55
2.85
C
.055
.071
1.40
1.80
D
-----
.053
-----
1.35
E
.012
.031
0.30
.78
G
.006
-----
0.15
-----
H
-----
.01
-----
.25
J
-----
.006
-----
.15
A
B
E
C
J
D
H
G
SOD123
0.036"
0.093"
0.048"
SUGGESTED SOLDER
PAD LAYOUT
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mccsemi
.com
BZT52C2V4 thru BZT52C39
M C C
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
NORMAL
ZENER
VOLTAGE
Vz@ Izt
TEST
CURRENT Izt
MAXIMUM ZENER
IMPEDANCE
`B' SUFFIX ONLY
Zzt @ Izt Zzk @ Izk=1.0mA
MAXIMUM REVERSE
LEAKAGE CURRENT
Ir @ Vr
Max. Zener Current
Izm @ TA
MCC PART
NUMBER
Marking
VOLTS mA OHMS OHMS nA VOLTS mA
BZT52C2V4 W1 2.4 5 85 600 100000 1.0 -
BZT52C2V7 W2 2.7 5 83 500 75000 1.0 134
BZT52C3
W3 3.0 5 95 500 50000 1.0 118
BZT52C3V3 W4 3.3 5 95 500 25000 1.0 109
BZT52C3V6 W5 3.6 5 95 500 15000 1.0 100
BZT52C3V9 W6 3.9 5 95 500 10000 1.0 92
BZT52C4V3 W7 4.3 5 95 500 5000 1.0 84
BZT52C4V7 W8 4.7 5 78 500 5000
1.0 76
BZT52C5V1 W9 5.1 5 60 480 100 0.8 67
BZT52C5V6 WA 5.6 5 40 400 100 1.0 59
BZT52C6V2 WB 6.2 5 10 200 100 2.0 54
BZT52C6V8 WC 6.8 5 8.0 150 100 3.0 49
BZT52C7V5 WD 7.5 5 7.0 50 100 5.0 44
BZT52C8V2 WE 8.2 5 7.0 50 100 6.0 40
BZT52C9V1 WF 9.1 5 10 50 100 7.0 36
BZT52C10 WG 10 5 15 70 100 7.5 33
BZT52C11 WH 11 5 20 70 100 8.5 30
BZT52C12 WI 12 5 20 90 100 9.0 28
BZT52C13 WK 13 5 25 110 100 10 25
BZT52C15 WL 15 5 30 110 100 11 23
BZT52C16 WM 16 5 40 170 100 12 20
BZT52C18 WN 18 5 50 170 100 14 18
BZT52C20 WO 20 5 50 220 100 15 17
BZT52C22 WP 22 5 55 220 100 17 16
BZT52C24 WR 24 5 80 220 100 18 13
BZT52C27 WS 27 5 80 250 100 20 12
BZT52C30 WT 30 5 80 250 100 22.5 10
BZT52C33 WU 33 5 80 250 100 25 9
BZT52C36 WW 36 5 90 250 100 27 9
BZT52C39 WX 39 5 90 300 100 29 8
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of 5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener Voltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30
O
C, from the diode body.
4. Zener Impedance (Z
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5. Surge Current (I
R
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.
BZT52C2V4 thru BZT52C39
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mccsemi
.com
M C C
TYPICAL REVERSE CURRENT
TEMPERA
TURE
COEFFICIENT
,mV
/
C
)
o
NOMINAL ZENER VOLTAGE, Volts
-1
0
1
2
3
4
5
6
7
8
12
11
10
9
8
7
6
5
4
3
2
-2
-3
STEADY STATE POWER DERATING
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
100
10
1
1000
100
10
1
IZ = 1 mA
5 mA
20 mA
DYNAMIC
I
MPEDANCE,
W
NORMAL ZENER VOLTAGE, Volts
T
J
=25 C
O
I
Z(AC)=0.1
I
F=1 kHZ
Z(DC)
FOR
W
ARD
CURRENT
,m
A
TYPICAL FORWARD VOLTAGE
FORWARD VOLTAGE, Volts
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1000
100
10
1
75 C
O
5 C
O
25 C
O
150 C
O
TYPICAL CAPACITANCE
100
1000
100
10
1
10
1
BIAS AT
50% OF VZ NOM
0 V BIAS
1 V BIAS
CAP
ACIT
ANCE,
pF
NOMINAL ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
NOMINAL ZENER VOLTAGE, Volts
TEMPERA
TURE
COEFFICIENT
,mV
/
C
)
o
10
100
TEMPERATURE ( C)
o
POWER
DISSIP
A
TION,
W
atts
STEADY STATE POWER DERATING
1.2
1.0
0.8
0.6
0.4
0.2
0
150
125
100
75
50
25
P
D V
.
S
. T
A
155
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