Features
l
Low Reverse Recovery Time
l
Low Reverse Capacitance
l
Low Forward Voltage Drop
l
Guard Ring Construction for Transient Protection
Mechanical Data
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Case: DO-35, Glass
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Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: Indicated by Cathode Band
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Symbol
SD101A
SD101B
SD101C
Peak Repetitive Reverse Voltage
V
RRM
Working Peak Reverse Voltage
V
RWM
60V
50V
40V
DC Blocking Voltage
V
R
RMS Reverse Voltage
V
R(RMS)
42V
35V
28V
Maximum sigle cycle surge 10us
square wave
I
FSM
Power Dissipation(Note 1)
P
d
Thermal Resistance, Junction to
Ambient
R
Junction Tmperature
T
j
Operation/Storage Temp. Range
T
STG
-55 to +150
o
C
300K/W
400mW
2.0A
125
o
C
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol
Max
Test Condition
Leakage Current SD101A
SD101B
SD101C
I
R
200nA
200nA
200nA
V
R
=50V
V
R
=40V
V
R
=30V
Maximum Forward SD101A
Voltage Drop SD101B
SD101C
SD101A
SD101B
SD101C
V
F
0.41V
0.4V
0.39V
1V
0.95V
0.9V
I
F
=1mA
I
F
=15mA
Junction Cap. SD101A
SD101B
SD101C
C
j
2.0pF
2.1pF
2.2pF
V
R
=0V, f=1.0MHz
Reverse Recovery Time
t
rr
1ns
I
F
=I
R
=50mA, recover to
200mA/0.1I
R
Note
: 1. Valid provided that electrodes are kept at ambient temperature
SD101A
THRU
SD101C
Small Signal
Schottky Diodes
DO-35
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.166
---
4.2
B
---
.079
---
2.00
C
---
.020
---
.52
D
1.000
---
25.40
---
A
B
C
D
D
Cathode
Mark
www.
mccsemi
.com
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
Figure 2. Typical forward conduction curve of
Schottky barrier and PN junction
combination
guard ring
Figure 4. Typical capacitance curve as a function
of reverse voltage
mA
mA
mA
V
F
V
R
V
R
V
F
I
F
I
R
I
R
I
F
A
B
C
A
A
B
B
C
C
mA
Figure 3.Typical variation of reverse current
at versus temperature
www.
mccsemi
.com
SD101A thru SD101C
M C C
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