Transient Voltage
Protection Device
75 to 320 Volts
Features
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 100A@10/1000us or 400A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V -0
Mechanical Data
Case : Molded plastic
Polarity : None cathode band denotes
Approx Weight : 0.093grams
Characteristic Symbol Value Unit
Non-repetitive peak
impulse current I
PP
100A 10/1000us
Non-repetitive peak
On-state current I
TSM
50A
8.3ms, one-half
cycle
Operating temperature
range T
OP
-40~150
o
C
Junction and storage
temperature range
T
J
, T
STG
-55~150
o
C
Thermal Resistance
Characteristic Symbol Value Unit
Thermal Resistance
junction to ambient 100
o
C/W On recommended
pad layout
Typical positive
temperature
coefficient for
breakdown voltage
0.1%/
o
C
Maximum Rating
Thermal Resistance
junction to lead 20
o
C/W
V
BR
/
T
J
R
q
JA
R
q
J
L
www.
mccsemi
.com
TSMBJ1006C
THRU
TSMBJ1024C
DO-214AA
(SMBJ)
H
J
E
F
G
A
B
D
C
Cathode Band
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A .078 .096 2.00 2.44
B .077 .083 1.96 2.10
C .002 .008 .05 .20
D --- .02 --- .51
E .030 .060 .76 1.52
F .065 .091 1.65 2.32
G .205 .220 5.21 5.59
H .160 .180 4.06 4.57
J .130 .155 3.30 3.94
0.070"
0.090"
0.085"
SUGGESTED SOLDER
PAD LAYOUT
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
www.
mccsemi
.com
M C C
ELECTRICAL CHARACTERISTIC
@25
Unless otherwise specified
MAXIMUM RATED SURGE WAVEFORM
MAXIMUM RATED SURGE WAVEFORM
MAXIMUM RATED SURGE WAVEFORM
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
GR-1089-CORE
500
8/20 us
IEC 61000-4-5
400
10/160 us
FCC Part 68
200
10/700 us
ITU-T K20/21
200
10/560 us
FCC Part 68
150
10/1000 us
GR-1089-CORE
100
TIME
0
50
100
0
Ipp ; PEAK PULSE CURRENT (%)
Peak value (Ipp)
Half value
tr
tp
tr = rise time to peak value
tp = decay time to half value
Symbol
Parameter
V
DRM
Stand-off voltage
I
DRM
Leakage current at stand-off voltage
V
BR
Breakdown voltage
I
BR
Breakdown current
V
BO
Breakover voltage
I
BO
Breakover current
I
H
Holding current
NOTE: 1
V
T
On state voltage
I
PP
Peak pulse current
C
O
Off-state capacitance
NOTE: 2
I
V
V
DRM
I
PP
I
BO
I
H
I
BR
I
DRM
V
BR
V
BO
V
T
NOTE
1. I H > ( V L/ R L
)
If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
Parameter
Rated
Repetitive Off-
state Voltage
Off-state
Leakage
Current@V
DRM
Breakover
Voltage
On-State
Voltage
@I
T
=1.0A
Breakover Current Holding Current
Off-State
Capacitance
Symbol
V
DRM
I
DRM
V
BO
V
T
I
BO-
I
BO+
I
H-
I
H+
C
J
Units
Volts
uA
Volts
Volts
mA
mA
mA
mA
pF
Limit
Max
Max
Max
Max
Min
Max
Min
Max
Typ.
TSMBJ1006C 75 5 98 5 50 800 150 800 200
TSMBJ1007C 90 5 130 5 50 800 150 800 120
TSMBJ1010C 140 5 180 5 50 800 150 800 120
TSMBJ1012C 160 5 220 5 50 800 150 800 120
TSMBJ1016C 190 5 265 5 50 800 150 800 80
TSMBJ1018C 220 5 300 5 50 800 150 800 80
TSMBJ1022C 275 5 350 5 50 800 150 800 80
TSMBJ1024C 320 5 400 5 50 800 150 800 80
TSMBJ1006C thru TSMBJ1024C
M C C
TSMBJ1006C thru TSMBJ1024C
www.
mccsemi
.com
-50
-25
0
25
50
75
100
125
150
175
Tj ; JUNCTION TEMPERATURE (
)
0.9
0.95
1
1.05
1.1
1.15
1.2
NORMALISED BREAKDOWN VOLTAGE
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
-25
0
25
50
75
100
125
150
Tj , JUNCTION TEMPERATURE (
)
0.001
0.01
0.1
1
10
100
I(DRM) , OFF-STATE CURRENT(uA)
Fig.1 - Off-State Current v.s Junction Temperature
V
DRM
= 50V
V
BR
(T
J
)
V
BR
(T
J
=25
)
-50
-25
0
25
50
75
100
125
150
175
Tj ; JUNCTION TEMPERATURE (
)
0.95
1
1.05
1.1
NORMALISED BREAKOVER VOLTAGE
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
V
BO
(T
J
)
V
BO
(T
J
=25
)
1
2
3
4
5
6
7
8
9
V(T) ; ON-STATE VOLTAGE
1
10
100
I(T) ; ON-STATE CURRENT (A)
Fig.4 - On-State Current v.s On-State Voltage
T
J
= 25
-50
-25
0
25
50
75
100
125
Tj ; JUNCTION TEMPERATURE (
)
0
0.5
1
1.5
2
NORMALISED HOLDING CURRENT
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
I
H
(T
J
)
I
H
(T
J
=25
)
1
10
100
VR ; REVERSE VOLTAGE (V)
0.1
1
NORMALISED CAPACITANCE
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
Tj =25
f=1MHz
V
RMS
= 1V
C
O
(VR)
C
O
(VR = 1V)
M C C
www.
mccsemi
.com
TELECOM
EQUIPMENT
E.G. MODEM
TIP
RING
FUSE
FUSE
FUSE
FUSE
TSPD 1
TSPD 1
TSPD 1
TSPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TIP
RING
TSPD 1
TSPD 1
TSPD 1
TSPD 1
TSPD 2
TSPD 2
TSPD 2
TSPD 2
PTC
PTC
TELECOM
EQUIPMENT
E.G. LINE CARD
TIP
RING
TSPD 2
TSPD 2
TSPD 2
TSPD 2
TSPD 3
TSPD 3
TSPD 3
TSPD 3
TSPD 1
TSPD 1
TSPD 1
TSPD 1
PTC
PTC
TYPICAL APPLICATION CIRCUITS
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
TSMBJ1006C thru TSMBJ1024C
PDF 
ZIP