UF1A
THRU
UF1K
1 Amp Surface Mount
Super Fast
Rectifier
50 to 800 Volts
DO-214AA
(SMBJ) (LEAD FRAME)
Features
For surface mounted applications
Glass passivated junction
Easy pick and place
High Temp Soldering: 260
C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
1.0A T
L
= 100
C
Peak Forward Surge
Current
I
FSM
30A
8.3ms, half sine
Maximum Instantaneous
Forward Voltage
UF1A-D
UF1G
UF1J-K
V
F
1.4V
1.7V
I
FM
= 1.0A;
T
J
= 25
C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
10
A
100
A
T
A
= 25
C
T
A
= 125
C
Typical Junction
Capacitance
C
J
17pF Measured at
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 200
sec, Duty cycle 2%
H
J
E
F
G
A
B
D
C
0.075"
0.085"
0.095"
SUGGESTED SOLDER
PAD LAYOUT
Operating Temperature: -50
C to +150
C
Storage Temperature: -50
C to +150
C
Maximum Thermal Resistance; 30
C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Reccurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
UF1A UF1A 50V 35V 50V
UF1B UF1B 100V 70V 100V
UF1D UF1D 200V 140V 200V
UF1G UF1G 400V 280V 400V
UF1J UF1J 600V 420V 600V
Maximum Reverse
Recovery Time
UF1A-G
UF1J-K
T
rr
50ns
100ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
M C C
www.
mccsemi
.com
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A .083 .096 2.11 2.44
B .075 .083 1.91 2.11
C .002 .008 .05 .20
D ---- - .02 ----- .51
E .030 .050 .76 1.27
F .065 .091 1.65 2.32
G .200 .220 5.08 5.59
H .160 .185 4.06 4.70
J
.130
.155
3.30
3.94
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
UF1K UF1K 800V 560V 800V
1.0V
UF1A thru UF1K
M C C
www.
mccsemi
.com
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
t
rr
+0.5A
0
-0.25
-1.0
SET TIME 1cm
BASE FOR
50 ns/cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
1.0
0.1
.01
0
.
2 .4
.
6 .8
1.0 1.2 1.4
TYPICAL
TJ = 25
J
UF1A
UF1G
UF1K
100
10
1
0.1
1
10
100
TJ = 25
J
f = 1.0MHz
Vsig = 50m Vp-p
REVERSE VOLTAGE, VOLTS
Fig. 2-FORWARD CHARACTERISTICS
Fig. 3- TYPICAL JUNCTION CAPACITANCE
2.0
1.0
25
50
75 100
125
150
175
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.3150.315"(8.08.0mm)
PAD AREAS
LEAD TEMPERATURE,
J
30
25
20
15
10
5
1 2
5 10 20
50 100
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
NUMBER OF CYCLES AT 60Hz
Fig. 4- FORWARD CURRENT DERATING CURVE
Fig. 5-PEAK FORWARD SURGE CURRENT
P
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