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P/N:PM0867
REV. 1.2, MAR. 17, 2004
MX28F160C3T/B
16M-BIT [1M x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
Automatic sector erase, word write and sector lock/
unlock configuration
Status Reply
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
Data Protection Performance
- Include boot sectors and parameter and main sectors
to be locked/unlocked
100,000 minimum erase/program cycles
Common Flash Interface (CFI)
128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
Latch-up protected to 100mA from -1V to VCC+1V
Package type:
- 48-pin TSOP (12mm x 20mm)
- 48-ball CSP (8mm x 6mm)
FEATURES
Bit Organization: 1,048,576 x 16
Single power supply operation
- VCC=VCCQ=2.7~3.6V for read, erase and program
operation
- VPP=12V for fast production programming
- Operating temperature:-40
C~85
C
Fast access time : 70/90/110ns
Low power consumption
- 9mA typical active read current, f=5MHz
- 18mA typical program current (VPP=1.65~3.6V)
- 21mA typical erase current (VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
Sector architecture
- Sector structure : 4Kword x 2 (boot sectors), 4Kword
x 6 (parameter sectors), 32Kword x 31 (main sectors)
- Top/Bottom Boot
Auto Erase and Auto Program
- Automatically program and verify data at specified
address
- Auto sector erase at specified sector
Automatic Suspend Enhance
GENERAL DESCRIPTION
The MX28F160C3T/B is a 16-mega bit Flash memory
organized as 1M words of 16 bits. The 1M word of data
is arranged in eight 4Kword boot and parameter sectors,
and thirty-one 32K word main sectors which are indi-
vidually erasable. MXIC's Flash memories offer the most
cost-effective and reliable read/write non-volatile random
access memory. The MX28F160C3T/B is packaged in
48-pin TSOP and 48-ball CSP. It is designed to be re-
programmed and erased in system or in standard
EPROM programmers.
The standard MX28F160C3T/B offers access time as
fast as 70ns, allowing operation of high-speed micropro-
cessors without wait states.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX28F160C3T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
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MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX28F160C3T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
The dedicated VPP pin gives complete data protection
when VPP< VPPLK.
A Command User Interface (CUI) serves as the inter-
face between the system processor and internal opera-
tion of the device. A valid command sequence written to
the CUI initiates device automation. An internal Write
State Machine (WSM) automatically executes the algo-
rithms and timings necessary for erase, word write and
sector lock/unlock configuration operations.
A sector erase operation erases one of the device's 32K-
word sectors typically within 1.0s, 4K-word sectors typi-
cally within 0.5s independent of other sectors. Each sec-
tor can be independently erased minimum 100,000 times.
Sector erase suspend mode allows system software to
suspend sector erase to read or write data from any other
sector.
Writing memory data is performed in word increments of
the device's 32K-word sectors typically within 0.8s and
4K-word sectors typically within 0.1s. Word program sus-
pend mode enables the system to read data or execute
code from any other memory array location.
MX28F160C3T/B features with individual sectors lock-
ing by using a combination of bits thirty-nine sector lock-
bits and WP, to lock and unlock sectors.
The status register indicates when the WSM's sector
erase, word program or lock configuration operation is
done.
The access time is 70/90/110ns (tELQV) over the oper-
ating temperature range (-40
C to +85
C) and VCC sup-
ply voltage range of 2.7V~3.6V.
MX28F160C3T/B's power saving mode feature substan-
tially reduces active current when the device is in static
mode (addresses not switching). In this mode, the typi-
cal ICCS current is 7uA (CMOS) at 3.0V VCC.
As CE and RP are at VCC, ICC CMOS standby mode is
enabled. When RP is at GND, the reset mode is enabled
which minimize power consumption and provide data
write protection.
A reset time (tPHQV) is required from RP switching high
until outputs are valid. Similarly, the device has a wake
time (tPHEL) from RP-high until writes to the CUI are
recognized. With RP at GND, the WSM is reset and the
status register is cleared.
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MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
BLOCK DIAGRAM
Output
Buffer
Output
Multiple
x
e
r
Data
Register
DQ0-DQ15
Identifier
Register
Command
User
Interface
Input
Buffer
Status
Register
Data
Comparator
Y-Gating
32K-Word
Main Sector
x31
.......
.......
Boot Sector 0
Boot Sector 1
P
a
r
ameter Sector 0
P
a
r
ameter Sector 1
P
a
r
ameter Sector 2
P
a
r
ameter Sector 3
P
a
r
ameter Sector 4
P
a
r
ameter Sector 5
Main Sector 0
Main Sector 1
Main Sector 29
Main Sector 30
Write
State
Machine
Program/Erase
Voltage Switch
Y
Decoder
Input
Buffer
A0~A19
Address
Latch
Address
Counter
X
Decoder
I/O
Logic
VCC
CE
WE
OE
RP
WP
VPP
VCC
GND
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P/N:PM0867
MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
PIN CONFIGURATIONS
48 TSOP (Standard Type) (12mm x 20mm)
48 Ball CSP
(8mm x 6mm) Top View, Ball Down for MX28F160C3T/BXA
(Ball Pitch=0.75mm, Ball Width=0.35mm)
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RP
VPP
WP
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A16
VCCQ
GND
Q15
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE
GND
CE
A0
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
MX28F160C3T/B
A1
A13
A2
A11
A3
A8
A4
VPP
A5
WP
A6
A19
B1
A14
B2
A10
B3
WE
B4
RP
B5
A18
B6
A17
C1
A15
C2
A12
C3
A9
C4
NC
C5
NC
C6
A6
D1
A16
D2
DQ14
D3
DQ5
D4
DQ11
D5
DQ2
D6
DQ8
E1
VCCQ
E2
DQ15
E3
DQ6
E4
DQ12
E5
DQ3
E6
DQ9
F1
GND
F2
DQ7
F3
DQ13
F4
DQ4
F5
VCC
F6
DQ10
A7
A7
A8
A4
B7
A5
B8
A2
C7
A3
C8
A1
D7
CE
D8
A0
E7
DQ0
E8
GND
F7
DQ1
F8
OE
8.0 mm
6.0 mm
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P/N:PM0867
MX28F160C3T/B
REV. 1.2, MAR. 17, 2004
Table 1. Pin Description
Symbol
Type
Description and Function
A0-A19
input
Address inputs for memory address. Data pin float to high-impedance when the chip is
deselected or outputs are disable. Addresses are internally latched during a write or
erase cycle.
DQ0-DQ15
input/output
Data inputs/outputs: Inputs array data on the second CE and WE cycle during a pro-
gram command. Data is internally latched. Outputs array and configuration data. The
data pin float to tri-state when the chip is de-selected.
CE
input
Chip Enable : Activates the device's control logic, input buffers, and sense amplifiers.
CE high de-selects the memory device and reduce power consumption to standby
level. CE is active low.
RP
input
Reset/Deep Power Down: when RP=VIL, the device is in reset/deep power down mode,
which drives the outputs to High Z, resets the WSM and minimizes current level.
When RP=VIH, the device is normal operation. When RP transitions from VIL to VIH,
the device defaults to the read array mode.
WE
input
Write Enable: to control write to CUI and array sector. WE=VIL becomes active. The
data and addresses are latched on the rising edge of the second WE pulse.
VPP
input/supply
Program/Erase Power Supply:(1.65V~3.6V or 11.4V~12.6V)
Lower VPP<VPPLK, to protect any contents against Program and Erase Command.
Set VPP=VCC for in-system Read, Program and Erase Operation.
Raise VPP to 12V
5% for faster program and erase in a production environment.
OE
input
Output enable: gates the device's outputs during a real cycle.
WP
input
Write Protect: When WP is VIL, the sectors marked Lock Down can't be unlocked
through software. When WP is VIH, the lock down mechanism is disable and sectors
previously locked down are now locked and can be unlocked and locked through soft-
ware. After WP goes low, any sectors previously marked lock down revert to that state.
VCC
supply
Device power supply: (2.7V~3.6V).
VCCQ
input
I/O Power Supply: supplies for input/output buffers. (VCCQ must be tied to VCC)
GND
supply
Ground voltage: all the GND pin shall not be connected.
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