Schottky Diodes: MNH 300 Series
High Barrier Schottky Mixer Diodes
Description
The MicroMetrics MNH 300 series of
High Barrier Schottky diodes are metal
semiconductor junction devices that
have a typical short reverse recovery
time. This allows their use at high
microwave frequencies when the per-
formance of the n-type may be
reduced. The forward I-V of schottky
diodes is determined by the junction
metal used. For every different metal
selection there is a different forward
voltage characteristic or "Barrier
Height". These devices are best suited
for applications through 26 GHz.
Applications
High Barrier Schottky Mixer diodes are
ideally suited for use in mixers, dou-
blers, modulators and high speed
switches.
Features
Multi-Junction Chips
Low 1/F Noise
Small Junction Capacitance
Packaging
Chip, Glass, Ceramic, Beam Lead
54
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Typical Performance
10
0
.5
1.0
10
1
100
A
100 mA
FORW
ARD CURRENT
FORWARD VOLTAGE
(V)
Schottky Diodes: MNH 300 Series
Electrical Characteristics
55
Schottky Diodes
MicroMetrics, Inc. 136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Breakdown
Forward
Junction
Series
Tangential
Voltage
Voltage
Capacitance
Resistance
Signal
@10A
@1mA
@0 Vdc 1MHz
@5 mA
Sensitivity
MIN
MAX
TYP
TYP
TYP
Part
(V)
(V)
(pF)
(Ohms)
(dB)
Number
4.0
0.475
0.08
10.0
-52
MNH300
4.0
0.475
0.1
10.0
-50
MNH301
4.0
0.475
0.12
8.0
-48
MNH302
4.0
0.475
0.14
6.0
-45
MNH303
5.0
0.5
0.08
10.0
-52
MNH304
5.0
0.5
0.1
10.0
-50
MNH305
5.0
0.5
0.12
8.0
-48
MNH306
5.0
0.5
0.14
6.0
-45
MNH307
6.0
0.525
0.08
10.0
-52
MNH308
6.0
0.525
0.1
10.0
-50
MNH309
6.0
0.525
0.12
8.0
-48
MNH310
6.0
0.525
0.14
6.0
-45
MNH311
8.0
0.55
0.08
10.0
-52
MNH312
8.0
0.55
0.1
10.0
-50
MNH313
8.0
0.55
0.12
8.0
-48
MNH314
8.0
0.55
0.14
6.0
-45
MNH315
Maximum Ratings
Operating Temperature
-55C to + 150C
Storage Temperature
-65C to + 200C
Power Dissipation @25C
250mW
(derate linearly to zero at 150C)
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