HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002.03.27
Page No. : 1/4
HBT136AE
HSMC Product Specification
HBT136AE
TRIAC
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for
use in general purpose bidirectional switching and phase control
applications, where high sensitivity is required in all four quadrants.
Quick Reference Data
Symbol
Parameter
Max.
Unit
V
DRM
Repetitive peak off-state voltages
600
V
I
T(RMS)
RMS on-state current
4
A
I
TSM
Non-repetitive peak on-state current
25
A
Pin Configuration
Pin
Description
1
Main terminal 1
2
Main terminal 2
3
Gate
tab
Main terminal 2
1 2 3
tab
Symbol
T2
T1
G
Limtiing Values
Symbol
Parameter
Min.
Max.
Units
V
DRM
Repetitive peak off-state voltages
-
600
V
I
T(RMS)
RMS on-state current
-
4
A
I
TSM
Non-repetitive peak on-state current
-
25
A
I
2
t
I
2
t for fusing
-
3.1
A
2
S
Repetitive rate of rise of on-state current after triggering
T2+ G+
-
50
A/us
T2+ G-
-
50
A/us
T2- G-
-
50
A/us
dI
T
/dt
T2- G+
-
10
A/us
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
-
0.5
W
T
stg
Storage Temperature Range
-
150
C
T
j
Operating junction temperature
-
125
C
TO-220AB
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002.03.27
Page No. : 2/4
HBT136AE
HSMC Product Specification
Static Characteristics
(Ta=25
C)
HBT136AE
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
D
=12V, I
G
=0.1A, T2+ G+
-
5
10
mA
V
D
=12V, I
G
=0.1A, T2+ G-
-
6
10
mA
V
D
=12V, I
G
=0.1A, T2- G-
-
6
10
mA
I
GT
Gate Trigger Current
V
D
=12V, I
G
=0.1A, T2- G+
-
18
25
mA
V
D
=12V, I
GT
=0.1A, T2+ G+
-
-
15
mA
V
D
=12V, I
GT
=0.1A, T2+ G-
-
-
20
mA
V
D
=12V, I
GT
=0.1A, T2- G-
-
-
15
mA
I
L
Latching Current
V
D
=12V, I
GT
=0.1A, T2- G+
-
-
20
mA
I
H
Holding Current
V
D
=12V, I
GT
=0.1A
-
6
15
mA
V
T
On-state Voltage
I
T
=5A
-
1.4
1.70
V
V
GT
Gate Trigger Voltage
V
D
=12V, I
T
=0.1A
-
0.8
1.5
V
I
D
Off-state Leakage
Current
V
D
=V
DRM
-
-
200
uA
Static Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
dV
D
/dt
Critical rate of rise of
off-state voltage
V
DM
=67% V
DRM(max)
;
T
j
= 125
C; exponential
waveform; gate open circuit
-
50
-
V/us
t
gt
Gate controlled turn-
on time
I
TM
=6A; V
D
=V
DRM(max)
;
I
G
=0.1A; dI
G
/dt=5A/us
-
2
-
us
Thermal Resistances
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
Full cycle
Half cycle
In free air
-
-
-
-
-
60
3.0
3.7
-
K/W
K/W
K/W
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002.03.27
Page No. : 3/4
HBT136AE
HSMC Product Specification
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25
o
C),
Versus Air Temperature Ta
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
20
40
60
80
100
120
140
Ta(
o
C)
IG
T
/
IG
T
(
2
5
o
C)
T2+/G+
T2+/G-
T2-/G-
T2-/G+
Typical & Maximum On-State Characteristic
0
1
2
3
4
5
6
7
8
9
10
11
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VT/V
IT
/
A
typ
25C
125C
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25
o
C),
Versus Air Temperature Ta
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
Ta(
o
C)
VG
T
/
VG
T
(
2
5
o
C)
T2+/G+
T2-/G-
Normalised Holding Current IH(Ta)/IH(25
o
C),
Versus Air Temperature Ta
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
140
Ta/(
o
C)
I
L
/
I
L(
25
o
C)
Normalised Latching Current IL(Ta)/IL(25
o
C),
Versus Air Temperature Ta
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
Ta(
o
C)
I
L
/
I
L(
25
o
C)
Maximum On-State Dissipation, Ptot Versus Rms
On-State Current, a=Conduction Angle
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
3.0
4.0
5.0
IT(RMS)/A
P
t
o
t/w
a=90
a=120
a=180
a
a
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200101
Issued Date : 2001.07.01
Revised Date : 2002.03.27
Page No. : 4/4
HBT136AE
HSMC Product Specification
TO-220AB Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.2197
0.2949
5.58
7.49
I
-
*
0.1508
-
*
3.83
B
0.3299
0.3504
8.38
8.90
K
0.0295
0.0374
0.75
0.95
C
0.1732
0.185
4.40
4.70
M
0.0449
0.0551
1.14
1.40
D
0.0453
0.0547
1.15
1.39
N
-
*
0.1000
-
*
2.54
E
0.0138
0.0236
0.35
0.60
O
0.5000
0.5618
12.70
14.27
G
0.3803
0.4047
9.66
10.28
P
0.5701
0.6248
14.48
15.87
H
-
*
0.6398
-
*
16.25
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
Tab
Style: Pin 1. Main terminal 1
2. Main terminal 2
3. Gate
Tab connected to main terminal 2
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
Marking:
Date Code
Control Code
H
B T
1 3 6 A E
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