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Электронный компонент: 6S92

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2004 Microchip Technology Inc.
DS21908A-page 1
MCP6S91/2/3
Features
Multiplexed Inputs: 1 or 2 channels
8 Gain Selections:
- +1, +2, +4, +5, +8, +10, +16 or +32 V/V
Serial Peripheral Interface (SPI
TM
)
Rail-to-Rail Input and Output
Low Gain Error: 1% (max.)
Offset Mismatch Between Channels: 0 V
High Bandwidth: 1 to 18 MHz (typ.)
Low Noise: 10 nV/
Hz @ 10 kHz (typ.)
Low Supply Current: 1.0 mA (typ.)
Single Supply: 2.5V to 5.5V
Extended Temperature Range: -40C to +125C
Typical Applications
A/D Converter Driver
Multiplexed Analog Applications
Data Acquisition
Industrial Instrumentation
Test Equipment
Medical Instrumentation
Block Diagram
Description
The Microchip Technology Inc. MCP6S91/2/3 are
analog Programmable Gain Amplifiers (PGAs). They
can be configured for gains from +1 V/V to +32 V/V and
the input multiplexer can select one of up to two chan-
nels through a SPI port. The serial interface can also
put the PGA into shutdown to conserve power. These
PGAs are optimized for high-speed, low offset voltage
and single-supply operation with rail-to-rail input and
output capability. These specifications support single-
supply applications needing flexible performance or
multiple inputs.
The one-channel MCP6S91 and the two-channel
MCP6S92 are available in 8-pin PDIP, SOIC and MSOP
packages. The two-channel MCP6S93 is available in a
10-pin MSOP package. All parts are fully specified from
-40C to +125C.
Package Types
V
OUT
V
REF
V
DD
CS
SI
SO
SCK
CH1
CH0
V
SS
8
R
F
R
G
MUX
SPITM
Logic
Gain
Switches
R
e
si
sto
r
La
dde
r (R
LA
D
)
V
REF
CH0
V
SS
SI
SCK
1
2
3
4
8
7
6
5
V
DD
CS
V
OUT
MCP6S91
PDIP, SOIC, MSOP
CH1
CH0
V
SS
SI
SCK
1
2
3
4
8
7
6
5
V
DD
CS
V
OUT
MCP6S92
PDIP, SOIC, MSOP
CH0
V
OUT
CH1
CS
1
2
3
4
10
9
8
7 SI
SCK
5
6
V
REF
V
DD
SO
V
SS
MCP6S93
MSOP
Single-Ended, Rail-to-Rail I/O, Low-Gain PGA
2004 Microchip Technology Inc.
DS21908A-page 2
MCP6S91/2/3
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
V
DD
V
SS
........................................................................7.0V
All inputs and outputs..................... V
SS
0.3V to V
DD
+ 0.3V
Difference Input voltage ....................................... |V
DD
V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pin
.............................................................
2 mA
Current at Output and Supply Pins
................................
30 mA
Storage temperature .....................................-65C to +150C
Junction temperature .................................................. +150C
ESD protection on all pins (HBM; MM)
................
4 kV; 200V
Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
PIN FUNCTION TABLE
Name
Function
V
OUT
Analog Output
CH0, CH1 Analog Inputs
V
REF
External Reference Pin
V
SS
Negative Power Supply
CS
SPI Chip Select
SI
SPI Serial Data Input
SO
SPI Serial Data Output
SCK
SPI Clock Input
V
DD
Positive Power Supply
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2, SI and SCK are tied low and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Amplifier Inputs (CH0, CH1)
Input Offset Voltage
V
OS
-4
--
+4
mV
G = +1
Input Offset Voltage Mismatch
V
OS
--
0
--
V
Between inputs (CH0, CH1)
Input Offset Voltage Drift
V
OS
/
T
A
--
1.8
--
V/C
T
A
= -40C to +125C
Power Supply Rejection Ratio
PSRR
70
90
--
dB
G = +1 (Note 1)
Input Bias Current
I
B
--
1
--
pA
CHx = V
DD
/2
Input Bias Current at
Temperature
I
B
--
30
--
pA
CHx = V
DD
/2, T
A
= +85C
I
B
--
600
--
pA
CHx = V
DD
/2, T
A
= +125C
Input Impedance
Z
IN
--
10
13
||7
--
||pF
Input Voltage Range
V
IVR
V
SS
-
0.3
--
V
DD
+ 0.3
V
(Note 2)
Reference Input (V
REF
)
Input Impedance
Z
IN_REF
--
(5/G)||6
--
k
||pF
Voltage Range
V
IVR_REF
V
SS
--
V
DD
V
(Note 2)
Amplifier Gain
Nominal Gains
G
--
1 to 32
--
V/V
+1, +2, +4, +5, +8, +10, +16 or +32
DC Gain Error
G = +1
g
E
-0.2
--
+0.2
%
V
OUT
0.3V to V
DD
-
0.3V
G
+2
g
E
-1.0
--
+1.0
%
V
OUT
0.3V to V
DD
-
0.3V
DC Gain Drift
G = +1
G/
T
A
--
0.0002
--
%/C
T
A
= -40C to +125C
G
+2
G/
T
A
--
0.0004
--
%/C
T
A
= -40C to +125C
Note
1:
R
LAD
(R
F
+R
G
in Figure 4-1) connects V
REF
, V
OUT
and the inverting input of the internal amplifier. The MCP6S92 has
V
REF
tied internally to V
SS
, so V
SS
is coupled to the internal amplifier and the PSRR spec describes PSRR+ only. It is
recommended that the MCP6S92's V
SS
pin be tied directly to ground to avoid noise problems.
2:
The MCP6S92's V
IVR
and V
IVR_REF
are not tested in production; they are set by design and characterization.
3:
I
Q
includes current in R
LAD
(typically 60 A at V
OUT
= 0.3V). Both I
Q
and I
Q_SHDN
exclude digital switching currents.
2004 Microchip Technology Inc.
DS21908A-page 3
MCP6S91/2/3
Ladder Resistance
Ladder Resistance
R
LAD
3.4
4.9
6.4
k
(Note 1)
Ladder Resistance across
Temperature
R
LAD
/
T
A
--
+0.028
--
%/C
T
A
= -40C to +125C (Note 1)
Amplifier Output
DC Output Non-linearity G = +1
V
ONL
--
0.18
--
% of FSR V
OUT
0.3V to V
DD
-
0.3V, V
DD
= 5.0V
G
+2
V
ONL
--
0.050
--
% of FSR V
OUT
0.3V to V
DD
-
0.3V, V
DD
= 5.0V
Maximum Output Voltage Swing
V
OH_ANA
,
V
OL_ANA
V
SS
+ 20
--
V
DD
100
mV
G
+2; 0.5V output overdrive
V
SS
+ 60
--
V
DD
60
G
+2; 0.5V output overdrive,
V
REF
= V
DD
/2
Short Circuit Current
I
SC
--
25
--
mA
Power Supply
Supply Voltage
V
DD
2.5
--
5.5
V
Minimum Valid Supply Voltage
V
DD_VAL
--
0.4
2.0
V
Register data still valid
Quiescent Current
I
Q
0.4
1.0
1.6
mA
I
O
= 0 (Note 3)
Quiescent Current, Shutdown
Mode
I
Q_SHDN
--
30
--
pA
I
O
= 0 (Note 3)
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2, SI and SCK are tied low and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note
1:
R
LAD
(R
F
+R
G
in Figure 4-1) connects V
REF
, V
OUT
and the inverting input of the internal amplifier. The MCP6S92 has
V
REF
tied internally to V
SS
, so V
SS
is coupled to the internal amplifier and the PSRR spec describes PSRR+ only. It is
recommended that the MCP6S92's V
SS
pin be tied directly to ground to avoid noise problems.
2:
The MCP6S92's V
IVR
and V
IVR_REF
are not tested in production; they are set by design and characterization.
3:
I
Q
includes current in R
LAD
(typically 60 A at V
OUT
= 0.3V). Both I
Q
and I
Q_SHDN
exclude digital switching currents.
2004 Microchip Technology Inc.
DS21908A-page 4
MCP6S91/2/3
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2, C
L
= 60 pF, SI and SCK are tied low and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Frequency Response
-3 dB Bandwidth
BW
--
1 to 18
--
MHz
All gains; V
OUT
< 100 mV
P-P
(Note 1)
Gain Peaking
GPK
--
0
--
dB
All gains; V
OUT
< 100 mV
P-P
Total Harmonic Distortion plus Noise
f = 20 kHz, G = +1 V/V
THD+N
--
0.0011
--
%
V
OUT
= 1.5V 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz, R
L
= 10 k
to 1.5V
f = 20 kHz, G = +1 V/V
THD+N
--
0.0089
--
%
V
OUT
= 2.5V 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz
f = 20 kHz, G = +4 V/V
THD+N
--
0.0045
--
%
V
OUT
= 2.5V 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz
f = 20 kHz, G = +16 V/V
THD+N
--
0.028
--
%
V
OUT
= 2.5V 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz
Step Response
Slew Rate
SR
--
4.0
--
V/s
G = 1, 2
--
11
--
V/s
G = 4, 5, 8, 10
--
22
--
V/s
G = 16, 32
Noise
Input Noise Voltage
E
ni
--
4.5
--
V
P-P
f = 0.1 Hz to 10 Hz (Note 2)
--
30
--
f = 0.1 Hz to 200 kHz (Note 2)
Input Noise Voltage Density
e
ni
--
10
--
nV/
Hz f = 10 kHz (Note 2)
Input Noise Current Density
i
ni
--
4
--
fA/
Hz
f = 10 kHz
Note
1:
See Table 4-1 for a list of typical numbers and Figure 2-25 for the frequency response versus gain.
2:
E
ni
and e
ni
include ladder resistance noise. See Figure 2-12 for e
ni
versus G data.
2004 Microchip Technology Inc.
DS21908A-page 5
MCP6S91/2/3
DIGITAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= 25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2, C
L
= 60 pF, SI and SCK are tied low and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
SPI Inputs (CS, SI, SCK)
Logic Threshold, Low
V
IL
0
--
0.3V
DD
V
Input Leakage Current
I
IL
-1.0
--
+1.0
A
Logic Threshold, High
V
IH
0.7 V
DD
--
V
DD
V
Amplifier Output Leakage Current
--
-1.0
--
1.0
A
In Shutdown mode
SPI Output (SO, for MCP6S93)
Logic Threshold, Low
V
OL_DIG
V
SS
--
V
SS
+0.4
V
I
OL
= 2.1 mA, V
DD
= 5V
Logic Threshold, High
V
OH_DIG
V
DD
0.5
--
V
DD
V
I
OH
= -400 A
SPI Timing
Pin Capacitance
C
PIN
--
10
--
pF
All digital I/O pins
Input Rise/Fall Times (CS, SI, SCK)
t
RFI
--
--
2
s
(Note 1)
Output Rise/Fall Times (SO)
t
RFO
--
5
--
ns
MCP6S93
CS High Time
t
CSH
40
--
--
ns
SCK Edge to CS Fall Setup Time
t
CS0
10
--
--
ns
SCK edge when CS is high
CS Fall to First SCK Edge Setup Time
t
CSSC
40
--
--
ns
SCK Frequency
f
SCK
--
--
10
MHz
V
DD
= 5V (Note 2)
SCK High Time
t
HI
40
--
--
ns
SCK Low Time
t
LO
40
--
--
ns
SCK Last Edge to CS Rise Setup Time
t
SCCS
30
--
--
ns
CS Rise to SCK Edge Setup Time
t
CS1
100
--
--
ns
SCK edge when CS is high
SI Setup Time
t
SU
40
--
--
ns
SI Hold Time
t
HD
10
--
--
ns
SCK to SO Valid Propagation Delay
t
DO
--
--
80
ns
MCP6S93
CS Rise to SO Forced to Zero
t
SOZ
--
--
80
ns
MCP6S93
Channel and Gain Select Timing
Channel Select Time
t
CH
--
1.5
--
s
CHx = 0.6V, CHy = 0.3V, G = 1,
CHx to CHy select,
CS = 0.7 V
DD
to V
OUT
90% point
Gain Select Time
t
G
--
1
--
s
CHx = CHy = 0.3V,
G = 5 to G = 1 select,
CS = 0.7 V
DD
to V
OUT
90% point
Shutdown Mode Timing
Out of Shutdown mode (CS goes high)
to Amplifier Output Turn-on Time
t
ON
--
3.5
10
s
CS = 0.7 V
DD
to V
OUT
90% point
Into Shutdown mode (CS goes high) to
Amplifier Output High-Z Turn-off Time
t
OFF
--
1.5
--
s
CS = 0.7 V
DD
to V
OUT
90% point
Note
1:
Not tested in production. Set by design and characterization.
2:
When using the device in the daisy-chain configuration, maximum clock frequency is determined by a combination of
propagation delay time (t
DO
80 ns), data input set-up time (t
SU
40 ns), SCK high time (t
HI
40 ns) and SCK rise and
fall times of 5 ns. Maximum f
SCK
is therefore
5.8 MHz.
2004 Microchip Technology Inc.
DS21908A-page 6
MCP6S91/2/3
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= +2.5V to +5.5V, V
SS
= GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
--
+125
C
(Note 1)
Operating Temperature Range
T
A
-40
--
+125
C
Storage Temperature Range
T
A
-65
--
+150
C
Thermal Package Resistances
Thermal Resistance, 8L-PDIP
JA
--
85
--
C/W
Thermal Resistance, 8L-SOIC
JA
--
163
--
C/W
Thermal Resistance, 8L-MSOP
JA
--
206
--
C/W
Thermal Resistance, 10L-MSOP
JA
--
143
--
C/W
Note 1:
Operation in this range must not cause T
J
to exceed Maximum Junction Temperature (+150C).
2004 Microchip Technology Inc.
DS21908A-page 7
MCP6S91/2/3
FIGURE 1-1:
Channel Select Timing
Diagram.
FIGURE 1-2:
PGA Shutdown Timing
Diagram (must enter correct commands before
CS goes high).
FIGURE 1-3:
Gain Select Timing
Diagram.
FIGURE 1-4:
Detailed SPITM Serial Interface Timing; SPI 0,0 Mode.
CS
V
OUT
t
CH
0.6V
0.3V
CS
t
OFF
V
OUT
t
ON
Hi-Z
Hi-Z
I
SS
30 pA (typ.)
1.0 mA (typ.)
0.3V
CS
V
OUT
t
G
1.5V
0.3V
CS
SCK
SI
t
SU
t
HD
t
CSSC
t
SCCS
t
CSH
SO
(first 16 bits out are always zeros)
t
DO
t
SOZ
t
LO
t
HI
1/f
SCK
t
CS0
t
CS1
2004 Microchip Technology Inc.
DS21908A-page 8
MCP6S91/2/3
FIGURE 1-5:
Detailed SPITM Serial Interface Timing; SPI 1,1 Mode.
1.1
DC Output Voltage Specs / Model
1.1.1
IDEAL MODEL
The ideal PGA output voltage (V
OUT
) is:
EQUATION 1-1:
(see Figure 1-6). This equation holds when there are
no gain or offset errors and when the V
REF
pin is tied to
a low-impedance source (<< 0.1
) at ground potential
(V
SS
= 0V).
1.1.2
LINEAR MODEL
The PGA's linear region of operation, including offset
and gain errors, is modeled by the line V
O_LIN
shown in
Figure 1-6.
EQUATION 1-2:
The end points of this line are at V
O_ID
= 0.3V and
V
DD
0.3V. Figure 1-6 shows the relationship between
the gain and offset specifications referred to in the
electrical specifications as follows:
EQUATION 1-3:
The DC Gain Drift (
G/
T
A
) can be calculated from the
change in g
E
across temperature. This is shown in the
following equation:
EQUATION 1-4:
CS
SCK
SI
t
SU
t
HD
t
CSSC
t
SCCS
SO
(first 16 bits out are always zeros)
t
DO
t
SOZ
t
HI
t
LO
1/f
SCK
t
CS1
t
CSH
t
CS0
Where:
G is the nominal gain
V
O_ID
G
VIN
=
V
REF
V
SS
0V
=
=
V
O_LIN
G 1
g
E
+
(
)
V
IN
0.3V
G
-----------
V
OS
+
0.3V
+
=
V
REF
V
SS
0V
=
=
g
E
100%
V
2
V
1
G V
DD
0.6V
(
)
--------------------------------------
=
V
OS
V
1
G 1
g
E
+
(
)
-------------------------
=
G
+1
=
G
T
A
/
g
E
T
A
----------
=
2004 Microchip Technology Inc.
DS21908A-page 9
MCP6S91/2/3
FIGURE 1-6:
Output Voltage Model with
the standard condition V
REF
= V
SS
= 0V.
1.1.3
OUTPUT NON-LINEARITY
Figure 1-7 shows the Integral Non-Linearity (INL) of the
output voltage.
EQUATION 1-5:
The output non-linearity specification in the Electrical
Specifications (with units of: % of FSR) is related to
Figure 1-7 by:
EQUATION 1-6:
The Full-Scale Range (FSR) is V
DD
0.6V
(0.3V to V
DD
0.3V).
FIGURE 1-7:
Output Voltage INL with the
standard condition V
REF
= V
SS
= 0 V.
1.1.4
DIFFERENT V
REF
CONDITIONS
Some of the plots in Section 2.0 "Typical Performance
Curves"
, have the conditions V
REF
= V
DD
/2 or
V
REF
= V
DD
. The equations and figures above are easily
modified for these conditions. The ideal V
OUT
equation
becomes:
EQUATION 1-7:
The complete linear model is:
EQUATION 1-8:
where the new V
IN
end points are:
EQUATION 1-9:
The equations for extracting the specifications do not
change.
0
0
0.3
V
DD
0.3
V
DD
V
O
U
T
V
OUT
(V)
V
IN
(V)
0.3
V
DD
0.3 V
DD
G
G
G
V
1
V
O
_I
D
V
O
_L
IN
V
2
INL
V
OUT
V
O_LIN
=
V
ONL
max V
3
V
4
,
(
)
V
DD
0.6V
------------------------------- 100%
=
0
INL (V)
V
IN
(V)
0.3
V
DD
0.3 V
DD
G
G
G
0
V
3
V
4
V
O_ID
V
REF
G V
IN
V
REF
(
)
+
=
V
DD
V
REF
V
SS
0V
=
>
V
ON_LIN
G 1
g
E
+
(
)
V
IN
V
IN_L
V
OS
+
(
)
0.3V
+
=
V
R EF
V
SS
0V
=
=
V
IN_L
0.3V
V
REF
G
------------------------------
V
REF
+
=
V
IN_H
V
DD
0.3V
V
REF
G
-----------------------------------------------
V
REF
+
=
2004 Microchip Technology Inc.
DS21908A-page 10
MCP6S91/2/3
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-1:
DC Gain Error, G = +1.
FIGURE 2-2:
DC Gain Error, G
+2.
FIGURE 2-3:
Ladder Resistance Drift.
FIGURE 2-4:
DC Gain Drift, G = +1.
FIGURE 2-5:
DC Gain Drift, G
+2.
FIGURE 2-6:
Crosstalk vs. Frequency
(circuit in Figure 6-4).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-0
.
1
0
-0
.
0
8
-0
.
0
6
-0
.
0
4
-0
.
0
2
0.0
0
0.0
2
0.0
4
0.0
6
0.0
8
0.1
0
DC Gain Error (%)
P
e
r
cen
tag
e
o
f
O
ccur
r
e
nces
600 Samples
G = +1
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
-0
.
6
-0
.
5
-0
.
4
-0
.
3
-0
.
2
-0
.
1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
DC Gain Error (%)
P
e
r
cen
tag
e
o
f
O
ccur
r
e
nce
s
600 Samples
G
+2
0%
2%
4%
6%
8%
10%
12%
14%
16%
0
.
019
0
.
020
0
.
021
0
.
022
0
.
023
0
.
024
0
.
025
0
.
026
0
.
027
0
.
028
0
.
029
0
.
030
Ladder Resistance Drift (%/C)
P
e
r
c
ent
a
ge of Occu
r
r
enc
e
s
597 Samples
T
A
= -40 to +125C
0%
5%
10%
15%
20%
25%
30%
35%
-0.
0006
-0.
0005
-0.
0004
-0.
0003
-0.
0002
-0.
0001
0.
0000
0.
0001
0.
0002
0.
0003
0.
0004
0.
0005
0.
0006
DC Gain Drift (%/C)
Pe
rce
n
ta
ge o
f
O
ccur
r
e
nce
s
600 Samples
G = +1
T
A
= -40 to +125C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
26%
-0.
0020
-0.
0016
-0.
0012
-0.
0008
-0.
0004
0.
0000
0.
0004
0.
0008
0.
0012
0.
0016
0.
0020
DC Gain Drift (%/C)
Pe
rce
n
ta
ge o
f
O
ccur
r
e
nce
s
600 Samples
G
+2
T
A
= -40 to +125C
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
1.E+05
1.E+06
1.E+07
1.E+08
Frequency (Hz)
C
r
oss
t
al
k, In
pu
t R
e
f
e
r
r
ed
(d
B
)
V
DD
= 5.0V
G = +32 V/V
CH0 selected
R
S
= 1 k
R
S
= 0
R
S
= 100
R
S
= 10 k
100k
100M
10M
1M
2004 Microchip Technology Inc.
DS21908A-page 11
MCP6S91/2/3
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-7:
Input Offset Voltage,
V
DD
= 4.0V.
FIGURE 2-8:
Input Offset Voltage
Mismatch.
FIGURE 2-9:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-10:
Input Offset Voltage Drift.
FIGURE 2-11:
Input Offset Voltage vs.
V
REF
Voltage.
FIGURE 2-12:
Input Noise Voltage Density
vs. Gain.
0%
5%
10%
15%
20%
25%
30%
-3
-2
-1
0
1
2
3
Input Offset Voltage (mV)
P
e
r
cent
a
ge
of
Occu
r
r
en
ces
600 Samples
G = +1
V
DD
= 4.0V
0%
5%
10%
15%
20%
25%
30%
35%
-30
-20
-10
0
10
20
30
Input Offset Voltage Mismatch (V)
P
e
r
cen
tag
e
of
Occ
u
r
r
en
ces
32 Samples
V
DD
= 5.5V
V
IN
= 0.3V
= 10.0 V
RMS
Measurement
Repeatability:
10.4 V
RMS
1
10
100
1000
0.1
1
10
100
1000
10000
100000
Frequency (Hz)
Input Noise Voltage Density
(nV/
Hz)
1k
10k
100k
1
10
100
0.1
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-10
-8
-6
-4
-2
0
2
4
6
8
10
Input Offset Voltage Drift (V/C)
P
e
r
cen
tag
e
of
Oc
cur
r
e
n
ces
600 Samples
T
A
= -40 to +125C
G = +1
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
REF
Voltage (V)
In
p
u
t
Off
set
V
o
lta
g
e (
m
V
)
V
DD
= 5.5V
V
DD
= 2.5V
G = +1
V
IN
= V
REF
0
1
2
3
4
5
6
7
8
9
10
11
12
13
1
2
4
5
8
10
16
32
Gain (V/V)
Input Noise Voltage Density
(nV/
Hz)
f = 10 kHz
2004 Microchip Technology Inc.
DS21908A-page 12
MCP6S91/2/3
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-13:
PSRR vs. Ambient
Temperature.
FIGURE 2-14:
Input Bias Current vs.
Ambient Temperature.
FIGURE 2-15:
Quiescent Current in
Shutdown Mode vs. Ambient Temperature.
FIGURE 2-16:
PSRR vs. Frequency.
FIGURE 2-17:
Input Bias Current vs. Input
Voltage.
FIGURE 2-18:
Quiescent Current in
Shutdown Mode.
70
80
90
100
110
120
-50
-25
0
25
50
75
100
125
Ambient Temperature (C)
P
o
wer
S
u
p
p
ly Rej
ecti
o
n

R
a
tio
(dB
)
1
10
100
1,000
50
75
100
125
Ambient Temperature (C)
I
n
put
B
i
as C
u
r
r
e
nt
(p
A
)
V
DD
= 5.5V
CH0 = 5.0V
MCP6S92/3
MCP6S91
1.E-13
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
-50
-25
0
25
50
75
100
125
Ambient Temperature (C)
Qu
iesce
nt C
u
r
r
ent

in
S
hut
do
w
n
(
A
)
In Shutdown Mode
CH0 = V
DD
/2
V
DD
= 2.5V
V
DD
= 5.5V
100n
10n
1n
100p
10p
1p
100f
20
30
40
50
60
70
80
90
100
10
100
1000
10000
100000
1000000
Frequency (Hz)
P
o
w
e
r
Su
ppl
y R
e
j
e
c
t
i
o
n R
a
t
i
o
(d
B
)
V
DD
= 5.5V
V
DD
= 2.5V
1k
10k
1M
10
100
Input Referred
100k
1
10
100
1,000
10,000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
In
pu
t B
i
as
C
u
r
r
ent
(
p
A
)
T
A
= +85C
MCP6S92/3
V
DD
= 5.5V
T
A
= +125C
0%
5%
10%
15%
20%
25%
10
14
18
22
26
30
34
38
42
Quiescent Current in Shutdown (pA)
P
e
r
cen
tag
e
of
Occ
u
r
r
en
ces
39 Samples
V
DD
= 5.5V
CH0 = V
DD
/2
2004 Microchip Technology Inc.
DS21908A-page 13
MCP6S91/2/3
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-19:
Quiescent Current vs.
Supply Voltage.
FIGURE 2-20:
DC Output Non-Linearity vs.
Supply Voltage.
FIGURE 2-21:
Output Voltage Headroom
vs. Output Plus Ladder Current (circuit in
Figure 4-2).
FIGURE 2-22:
Output Short Circuit Current
vs. Supply Voltage.
FIGURE 2-23:
DC Output Non-Linearity vs.
Output Swing.
FIGURE 2-24:
Output Voltage Swing vs.
Frequency.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Qui
escen
t C
u
r
r
ent
(
m
A
)
T
A
= +125C
T
A
= +85C
T
A
= +25C
T
A
= -40C
0.001
0.01
0.1
1
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Supply Voltage (V)
D
C
O
u
tp
ut
N
o
n-L
i
nea
r
i
t
y,
I
n
pu
t R
e
f
e
rr
ed
(%
of
FS
R
)
V
OUT
= 0.3V to V
DD
- 0.3V
V
ONL
/G, G = +1
G = +2
G
+4
1
10
100
1000
0.1
1
10
Output Plus Ladder Current Magnitude (mA)
O
u
tp
ut
V
o
ltag
e H
ead
r
o
om
;
V
DD
-V
OH
a
nd
V
OL
-V
SS
(m
V
)
V
DD
= 5.5V
V
DD
= 2.5V
0
5
10
15
20
25
30
35
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
O
u
t
put
S
h
o
r
t
C
i
rc
ui
t
C
u
r
r
e
n
t
Mag
n
i
t
ude
(m
A
)
T
A
= +125C
T
A
= +85C
T
A
= +25C
T
A
= -40C
0.001
0.01
0.1
1
1
10
Output Voltage Swing (V
P-P
)
D
C
O
u
tp
ut
N
o
n-L
i
nea
r
i
t
y,
I
n
pu
t R
e
f
e
rr
ed
(%
of
FS
R
)
V
DD
= 5.5V
V
ONL
/G:
G = +1
G = +2
G
+4
0.1
1
10
1.E+05
1.E+06
1.E+07
Frequency (Hz)
Out
p
u
t

V
o
lt
age S
w
i
ng (V
P-
P
)
100k
10M
1M
V
DD
= 5.5V
V
DD
= 2.5V
G = 1, 2
G = 4 to 10
G = 16, 32
2004 Microchip Technology Inc.
DS21908A-page 14
MCP6S91/2/3
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-25:
Gain vs. Frequency.
FIGURE 2-26:
Bandwidth vs. Capacitive
Load.
FIGURE 2-27:
THD plus Noise vs.
Frequency, V
OUT
= 2 V
P-P
.
FIGURE 2-28:
Gain Peaking vs. Capacitive
Load.
FIGURE 2-29:
The MCP6S91/2/3 family
shows no phase reversal under overdrive.
FIGURE 2-30:
THD plus Noise vs.
Frequency, V
OUT
= 4 V
P-P
.
-20
-10
0
10
20
30
40
1.E+05
1.E+06
1.E+07
1.E+08
Frequency (Hz)
Gai
n
(
d
B)
G = +2
G = +1
1M
10M
100M
100k
G = +32
G = +16
G = +10
G = +8
G = +5
G = +4
1
10
100
10
100
1000
Capacitive Load (pF)
B
a
nd
w
i
d
t
h (
M
H
z
)
G = +1
G = +4
G = +16
0.0001
0.001
0.01
0.1
1
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
T
HD + No
is
e
(
%
)
100
1k
100k
10k
G = +1, R
L
= 10 k
to 1.5V
G = +4
G = +1
G = +16
Measurement BW = 80 kHz
V
OUT
= 2.0V
P-P
V
DD
= 5.0V
0
1
2
3
4
5
6
7
10
100
1000
Capacitive Load (pF)
Ga
i
n
P
e
ak
i
n
g

(
d
B
)
G = +16
G = +4
G = +1
-1
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
9
10
Time (1 s/div)
I
n
put
,
O
u
tp
ut
Vol
t
ag
e (V
)
V
DD
= 5.0V
G = +1 V/V
V
IN
V
OUT
0.0001
0.001
0.01
0.1
1
1.E+02
1.E+03
1.E+04
1.E+05
Frequency (Hz)
T
H
D + No
is
e
(
%
)
Measurement BW = 80 kHz
V
OUT
= 4 V
P-P
V
DD
= 5.0V
100
1k
100k
10k
G = +4
G = +1
G = +16
2004 Microchip Technology Inc.
DS21908A-page 15
MCP6S91/2/3
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-31:
Small-Signal Pulse
Response.
FIGURE 2-32:
Channel Select Timing.
FIGURE 2-33:
Output Voltage vs.
Shutdown Mode.
FIGURE 2-34:
Large-Signal Pulse
Response.
FIGURE 2-35:
Gain Select Timing.
FIGURE 2-36:
Minimum Valid Supply
Voltage (register data still valid).
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
0.000
0.200
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
Time (200 ns/div)
Ou
tp
u
t
V
o
ltag
e
(10
m
V
/d
iv)
-300
-250
-200
-150
-100
-50
0
50
100
150
200
250
300
No
r
m
a
lized
In
p
u
t V
o
lt
ag
e
(
50 m
V
/di
v
)
V
DD
= 5.0V
V
OUT
G = +1
G = +5
G = +32
GV
IN
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
Time (500 ns/div)
Ou
tpu
t
V
o
lt
age
(V
)
-20
-15
-10
-5
0
5
10
15
20
C
h
ip S
e
l
ect V
o
l
t
ag
e
(V
)
5
0
V
OUT
(CH0 = 0.6V,
G = +1)
V
OUT
(CH1 = 0.3V, G = +1)
CS
CS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.E+00
1.E+00
2.E+00
3.E+00
4.E+00
5.E+00
6.E+00
7.E+00
8.E+00
9.E+00
1.E+01
1.E+01
1.E+01
Time (1 s/div)
O
u
t
put
Vo
l
t
a
g
e (
m
V
)
-15
-10
-5
0
5
10
15
Ch
ip
S
e
lect
V
o
ltag
e (
V
)
V
OUT
is "ON"
Shutdown
CS
CS
Shutdown
V
DD
= 5.0V
CH0 = 0.3V
G = +1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Time (500 ns/div)
O
u
tp
u
t
V
o
lta
g
e (
V
)
-2.5
-1.5
-0.5
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
N
o
r
m
al
ized
In
p
u
t V
o
lta
g
e
(1
V
/
d
i
v
)
V
DD
= 5.0V
GV
IN
V
OUT
G = +1
G = +5
G = +32
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Time (500 ns/div)
Ou
tpu
t
V
o
l
t
ag
e (V
)
-20
-15
-10
-5
0
5
10
15
20
C
h
ip
S
e
l
ect
V
o
ltag
e (
V
)
V
OUT
(CH0 = 0.3V, G = +5)
V
OUT
(CH0 = 0.3V, G = +1)
CS
CS
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
0.0
0.5
1.0
1.5
2.0
Minimum Valid Supply Voltage (V)
P
e
r
cen
tag
e
o
f
Oc
cur
r
en
ces
32 Samples
1
st
Wafer Lot
2004 Microchip Technology Inc.
DS21908A-page 16
MCP6S91/2/3
Note: Unless otherwise indicated, T
A
= +25C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
= 10 k
to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-37:
Input Offset Voltage vs.
Input Voltage, V
DD
= 2.5V.
FIGURE 2-38:
Output Voltage Headroom
vs. Ambient Temperature.
FIGURE 2-39:
Input Offset Voltage vs.
Input Voltage, V
DD
= 5.5V.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0
0.5
1.0
1.5
2.0
2.5
Input Voltage (V)
In
p
u
t
Off
set
V
o
lta
g
e (
m
V
)
G = 1 V/V
V
DD
= 2.5V
T
A
= +125C
T
A
= +85C
T
A
= +25C
T
A
= -40C
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100
125
Ambient Temperature (C)
O
u
t
put
V
o
l
t
age
H
e
a
d
r
oom
;
V
DD
V
OH
and
V
OL
V
SS
(m
V
)
V
DD
= 5.5V: V
DD
V
OH
V
OL
V
SS
V
DD
= 2.5V: V
DD
V
OH
V
OL
V
SS
V
REF
= V
SS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Input Voltage (V)
In
p
u
t
Off
set
V
o
lta
g
e (
m
V
)
G = 1 V/V
V
DD
= 5.5V
T
A
= +125C
T
A
= +85C
T
A
= +25C
T
A
= -40C
2004 Microchip Technology Inc.
DS21908A-page 17
MCP6S91/2/3
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
3.1
Analog Output
The output pin (V
OUT
) is a low-impedance voltage
source. The selected gain (G), selected input (CH0,
CH1) and voltage at V
REF
determine its value.
3.2
Analog Inputs (CH0, CH1)
The inputs CH0 and CH1 connect to the signal
sources. They are high-impedance CMOS inputs with
low bias currents. The internal MUX selects which one
is amplified to the output.
3.3
External Reference Voltage (V
REF
)
The V
REF
pin, which is an analog input, should be at a
voltage between V
SS
and V
DD
(the MCP6S92 has
V
REF
tied internally to V
SS
). The voltage at this pin
shifts the output voltage.
3.4
Power Supply (V
SS
and V
DD
)
The Positive Power Supply Pin (V
DD
) is 2.5V to 5.5V
higher than the Negative Power Supply Pin (V
SS
). For
normal operation, the other pins are at voltages
between V
SS
and V
DD
.
Typically, these parts are used in a single (positive)
supply configuration. In this case, V
SS
is connected to
ground and V
DD
is connected to the supply. V
DD
will
need a local bypass capacitor (typically 0.01 F to
0.1 F) within 2 mm of the V
DD
pin. These parts can
share a bulk capacitor with analog parts (typically
2.2 F to 10 F) within 100 mm of the V
DD
pin.
3.5
Digital Inputs
The SPI interface inputs are: Chip Select (CS), Serial
Input (SI) and Serial Clock (SCK). These are Schmitt-
triggered, CMOS logic inputs.
3.6
Digital Output
The MCP6S93 device has a SPI interface Serial Output
(SO) pin. This is a CMOS push-pull output and does
not ever go High-Z. Once the device is deselected (CS
goes high), SO is forced low. This feature supports
daisy-chaining, as explained in Section 5.3 "Daisy-
Chain Configuration"
.
MCP6S91
MCP6S92
MCP6S93
Symbol
Description
1
1
1
V
OUT
Analog Output
2
2
2
CH0
Analog Input
--
3
3
CH1
Analog Input
3
--
4
V
REF
External Reference Pin
4
4
5
V
SS
Negative Power Supply
5
5
6
CS
SPITM Chip Select
6
6
7
SI
SPI Serial Data Input
--
--
8
SO
SPI Serial Data Output
7
7
9
SCK
SPI Clock Input
8
8
10
V
DD
Positive Power Supply
2004 Microchip Technology Inc.
DS21908A-page 18
MCP6S91/2/3
4.0
ANALOG FUNCTIONS
The MCP6S91/2/3 family of Programmable Gain
Amplifiers (PGA) is based on simple analog building
blocks (see Figure 4-1). Each of these blocks will be
explained in more detail in the following subsections.
FIGURE 4-1:
PGA Block Diagram.
4.1
Input MUX
The MCP6S91 has one input, while the MCP6S92 and
MCP6S93 have two inputs (see Figure 4-1).
For the lowest input current, float unused inputs. Tying
these pins to a voltage near the active channel's bias
voltage also works well. For simplicity, they can be tied
to V
SS
or V
DD
, but the input current may increase.
The one-channel MCP6S91 has approximately the
same input bias current as the two-channel MCP6S92
and MCP6S93.
The input offset voltage mismatch between channels
(
V
OS
) is, ideally, 0 V. The input MUX uses CMOS
transmission gates that have drain-source (channel)
resistance, but no offset voltage. The histogram in
Figure 2-8 reflects the measurement repeatability
(i.e., noise power bandwidth) rather than the actual
mismatch. Reducing the measurement bandwidth will
produce a more narrow histogram and give an aver-
age closer to 0 V.
4.2
Internal Op Amp
The internal op amp gives the right combination of
bandwidth, accuracy and flexibility.
4.2.1
COMPENSATION CAPACITORS
The internal op amp has three compensation capaci-
tors (comp. caps.) connected to a switching network.
They are selected to give good small-signal bandwidth
at high gains and good slew rates (full-power band-
width) at low gains. The change in bandwidth as gain
changes is between 2 and 12 MHz. Refer to Table 4-1
for more information.
TABLE 4-1:
GAIN VS. INTERNAL
COMPENSATION
CAPACITOR
4.2.2
RAIL-TO-RAIL CHANNEL INPUTS
The input stage of the internal op amp uses two differ-
ential input stages in parallel; one operates at low V
IN
(input voltage), while the other operates at high V
IN
.
With this topology, the internal inputs can operate to
0.3V past either supply rail. The input offset voltage is
measured at both V
IN
= V
SS
0.3V and V
DD
+ 0.3V to
ensure proper operation.
The transition between the two input stages occurs
when V
IN
V
DD
1.5V. For the best distortion and gain
linearity, avoid this region of operation.
MCP6S91 One input (CH0), no SO pin
MCP6S92 Two inputs (CH0, CH1), V
REF
tied
internally to V
SS
, no SO pin
MCP6S93 Two inputs (CH0, CH1)
V
OUT
V
REF
V
DD
CS
SI
SO
SCK
CH1
CH0
V
SS
8
R
F
R
G
MUX
SPITM
Logic
Gain
Switches
R
e
s
i
s
t
or
Lad
de
r (R
LA
D
)
Gain
(V/V)
Internal
Comp.
Cap.
GBWP
(MHz)
Typ.
SR
(V/s)
Typ.
FPBW
(MHz)
Typ.
BW
(MHz)
Typ.
1
Large
12
4.0
0.30
12
2
Large
12
4.0
0.30
6
4
Medium
20
11
0.70
10
5
Medium
20
11
0.70
7
8
Medium
20
11
0.70
2.4
10
Medium
20
11
0.70
2.0
16
Small
64
22
1.6
5
32
Small
64
22
1.6
2.0
Note 1:
FPBW is the Full-Power Bandwidth.
These numbers are based on V
DD
= 5.0V.
2:
No changes in DC performance
(e.g., V
OS
) accompany a change in
compensation capacitor.
3:
BW is the closed-loop, small signal -3 dB
bandwidth.
2004 Microchip Technology Inc.
DS21908A-page 19
MCP6S91/2/3
4.2.3
RAIL-TO-RAIL OUTPUT
The maximum output voltage swing is the maximum
swing possible under a particular amplifier load current.
The amplifier load current is the sum of the external
load current (I
OUT
) and the current through the ladder
resistance (I
LAD
); see Figure 4-2.
EQUATION 4-1:
FIGURE 4-2:
Amplifier Load Current.
See Figure 2-21 for the typical output headroom
(V
DD
V
OH
or V
OL
V
SS
) as a function of amplifier
load current.
The specification table states the output can reach
within 60 mV of either supply rail when R
L
= 10 k
and
V
REF
= V
DD
/2.
4.2.4
INPUT VOLTAGE AND PHASE
REVERSAL
The MCP6S91/2/3 amplifier family is designed with
CMOS input devices. It is designed to not exhibit phase
inversion when the input pins exceed the supply
voltages. Figure 2-29 shows an input voltage
exceeding both supplies with no resulting phase
inversion.
The maximum voltage that can be applied to the input
pins (CHx) is V
SS
0.3V to V
DD
+ 0.3V. Voltages on
the inputs that exceed this absolute maximum rating
can cause excessive current to flow into or out of the
input pins. Current beyond 2 mA can cause possible
reliability problems. Applications that exceed this rating
must be externally limited with an input resistor, as
shown in Figure 4-3.
FIGURE 4-3:
R
IN
limits the current flow
into an input pin.
4.3
Resistor Ladder
The resistor ladder shown in Figure 4-1
(R
LAD
= R
F
+ R
G
) sets the gain. Placing the gain
switches in series with the inverting input reduces the
parasitic capacitance, distortion and gain mismatch.
R
LAD
is an additional load on the output of the PGA and
causes additional current draw from the supplies. It is
also a load (Z
IN_REF
) on the external circuitry driving
the V
REF
pin.
In Shutdown mode, R
LAD
is still attached to the V
OUT
and V
REF
pins. Thus, these pins and the internal ampli-
fier's inverting input are all connected through R
LAD
and the output is not High-Z (unlike the internal op
amp).
While R
LAD
contributes to the output noise, its effect is
small. Refer to Figure 2-12.
Where:
Amplifier Load Current
I
OUT
I
LAD
+
=
I
LAD
V
OUT
V
REF
(
)
R
LAD
-------------------------------------
=
V
OUT
V
REF
R
LAD
I
OUT
I
LAD
MCP6S9X
CHx
R
IN
V
IN
R
IN
V
SS
(Maximum expected V
IN
)
2 mA
R
IN
(Maximum expected V
IN
) V
DD
2 mA
V
OUT
2004 Microchip Technology Inc.
DS21908A-page 20
MCP6S91/2/3
4.4
Rail-to-Rail V
REF
Input
The V
REF
input is intended to be driven by a low-
impedance voltage source. The source driving the
V
REF
pin should have an output impedance less than
0.1
to maintain reasonable gain accuracy. The supply
voltage V
SS
and V
DD
usually meet this requirement.
R
LAD
presents a load at the V
REF
pin to the external
circuit (Z
IN_REF
(5 k
/G)||(6 pF)), which depends on
the gain. Any source driving the V
REF
pin must be
capable of driving a load as heavy as 0.16 k
||6 pF
(G = 32).
The absolute maximum voltages that can be applied to
the reference input pin (V
REF
) are V
SS
0.3V and
V
DD
+ 0.3V. Voltages on the inputs that exceed this
absolute maximum rating can cause excessive current
to flow into or out of this pin. Current beyond 2 mA can
cause possible reliability problems. Because an
external series resistor cannot be used (for low gain
error), the external circuit must ensure that V
REF
is
between V
SS
0.3V and V
DD
+ 0.3V.
The V
IVR_REF
spec shows the region of normal
operation for the V
REF
pin (V
SS
to V
DD
). Staying within
this region ensures proper operation of the PGA and its
surrounding circuitry.
4.5
Shutdown Mode
These PGAs use a software shutdown command.
When the SPI interface sends a shutdown command,
the internal op amp is shut down and its output placed
in a High-Z state.
The resistive ladder is always connected between
V
REF
and V
OUT
; even in shutdown. This means that the
output resistance will be on the order of 5 k
, with a
path for output signals to appear at the input.
2004 Microchip Technology Inc.
DS21908A-page 21
MCP6S91/2/3
5.0
DIGITAL FUNCTIONS
The MCP6S91/2/3 PGAs use a standard SPI
compatible serial interface to receive instructions from
a controller. This interface is configured to allow daisy-
chaining with other SPI devices.
5.1
SPI Timing
Chip Select (CS) toggles low to initiate communica-
tion with these devices. The first byte of each SI word
(two bytes long) is the instruction byte, which goes
into the Instruction register. The Instruction register
points the second byte to its destination. In a typical
application, CS is raised after one word (16 bits) to
implement the desired changes. Section 5.3 "Daisy-
Chain Configuration", covers applications using
multiple 16-bit words. SO goes low after CS goes
high; it has a push-pull output that does not go into a
high-Z state.
The MCP6S91/2/3 devices operate in SPI modes 0,0
and 1,1. In 0,0 mode, the clock idles in the low state
(Figure 5-1). In 1,1 mode, the clock idles in the high
state (Figure 5-2). In both modes, SI data is loaded into
the PGA on the rising edge of SCK, while SO data is
clocked out on the falling edge of SCK. In 0,0 mode, the
falling edge of CS also acts as the first falling edge of
SCK (see Figure 5-1). There must be multiples of 16
clocks (SCK) while CS is low or commands will abort
(see Section 5.3 "Daisy-Chain Configuration").
FIGURE 5-1:
Serial Bus Sequence for the PGA; SPITM 0,0 Mode (see Figure 1-4).
FIGURE 5-2:
Serial Bus Sequence for the PGA; SPITM 1,1 Mode (see Figure 1-5).
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
bit 7
CS
SCK
SI
Instruction Byte
Data Byte
bit 0
bit
7
bit
0
SO
(first 16 bits out are always zeros)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
bit
7
CS
SCK
SI
Instruction Byte
Data Byte
bit
0
bit
7
bit
0
SO
(first 16 bits out are always zeros)
2004 Microchip Technology Inc.
DS21908A-page 22
MCP6S91/2/3
5.2
Registers
The analog functions are programmed through the SPI
interface using 16-bit words (see Figure 5-1 and
Figure 5-2). This data is sent to two of three 8-bit regis-
ters: Instruction register (Register 5-1), Gain register
(Register 5-2) and Channel register (Register 5-3).
There are no power-up defaults for these three
registers.
5.2.1
ENSURING VALID DATA IN THE
REGISTERS
After power up, the registers contain random data that
must be initialized. Sending valid gain and channel
selection commands to the internal registers puts valid
data into those registers. Also, the internal state
machine starts in an arbitrary state. Toggling the Chip
Select pin (CS) from high to low, then back to high
again, puts the internal state machine in a known, valid
condition (this can be done by entering any valid
command).
After power-up, and when the power supply voltage
dips below the minimum valid V
DD
(V
DD_VAL
), the inter-
nal register data and state machine may need to be
reset. This is accomplished as described before. Use
an external system supervisor to detect these events
so that the microcontroller will reset the PGA state and
registers.
A 0.1 F bypass capacitor mounted as close as
possible to the V
DD
pin provides additional transient
immunity.
5.2.2
INSTRUCTION REGISTER
The Instruction register has 3 command bits and 1 indi-
rect address bit; see Register 5-1. The command bits
include a
NOP
(
000
) to support daisy-chaining (see
Section 5.3 "Daisy-Chain Configuration"); the other
NOP
commands shown should not be used (they are
reserved for future use). The device is brought out of
Shutdown mode when a valid command, other than
NOP
or Shutdown, is sent and CS is raised.
REGISTER 5-1:
INSTRUCTION REGISTER
W-0
W-0
W-0
U-x
U-x
U-x
U-x
W-0
M2
M1
M0
--
--
--
--
A0
bit 7
bit 0
bit 7-5
M2-M0: Command bits
000
=
NOP
(Note 1)
001
=
PGA enters Shutdown mode as soon as a full 16-bit word is sent and CS is raised.
(Notes 1 and 2)
010
=
Write to register.
011
=
NOP
(reserved for future use) (Note 1)
1XX
=
NOP
(reserved for future use) (Note 1)
bit 4-1
Unimplemented: Read as `0' (reserved for future use)
bit 0
A0: Indirect Address bit
1
= Addresses the Channel register
0
= Addresses the Gain register
Note 1:
All other bits in the 16-bit word (including A0) are "don't cares."
2:
The device exits Shutdown mode when a valid command (other than
NOP
or
Shutdown) is sent and CS is raised; that valid command will be executed.
Shutdown does not toggle.
Legend:
R = Readable bit
W = Writable bit
U = Unimplemented bit, read as `0'
-n = Value at POR
`1' = Bit is set
`0' = Bit is cleared
x = Bit is unknown
2004 Microchip Technology Inc.
DS21908A-page 23
MCP6S91/2/3
5.2.3
SETTING THE GAIN
The amplifier can be programmed to produce binary
and decimal gain settings between +1 V/V and +32 V/V.
Register 5-2 shows the details. At the same time, differ-
ent compensation capacitors are selected to optimize
the bandwidth vs. slew rate trade-off (see Table 4-1).
REGISTER 5-2:
GAIN REGISTER
U-x
U-x
U-x
U-x
U-x
W-0
W-0
W-0
--
--
--
--
--
G2
G1
G0
bit 7
bit 0
bit 7-3
Unimplemented: Read as `0' (reserved for future use)
bit 2-0
G2-G0: Gain Select bits
000
= Gain of +1
001
= Gain of +2
010
= Gain of +4
011
= Gain of +5
100
= Gain of +8
101
= Gain of +10
110
= Gain of +16
111
= Gain of +32
Legend:
R = Readable bit
W = Writable bit
U = Unimplemented bit, read as `0'
-n = Value at POR
`1' = Bit is set
`0' = Bit is cleared
x = Bit is unknown
2004 Microchip Technology Inc.
DS21908A-page 24
MCP6S91/2/3
5.2.4
CHANGING THE CHANNEL
If the Instruction register is programmed to address the
Channel register, the multiplexed inputs of the
MCP6S92 and MCP6S93 can be changed using
Register 5-3.
REGISTER 5-3:
CHANNEL REGISTER
U-x
U-x
U-x
U-x
U-x
U-x
U-x
W-0
--
--
--
--
--
--
--
C0
bit 7
bit 0
bit 7-1
Unimplemented: Read as `0' (reserved for future use)
bit 0
C0: Channel Select bit
0
=
1
=
MCP6S91
CH0
CH0
MCP6S92
CH0
CH1
MCP6S93
CH0
CH1
Legend:
R = Readable bit
W = Writable bit
U = Unimplemented bit, read as `0'
-n = Value at POR
`1' = Bit is set
`0' = Bit is cleared
x = Bit is unknown
2004 Microchip Technology Inc.
DS21908A-page 25
MCP6S91/2/3
5.2.5
SHUTDOWN COMMAND
The software shutdown command allows the user to
put the amplifier into a low-power mode (see
Register 5-1). In this Shutdown mode, most pins are
high-impedance (Section 4.5 "Shutdown Mode" and
Section 5.1 "SPI Timing" cover the exceptions at pins
V
REF,
V
OUT
and SO).
Once the PGA has entered Shutdown mode, it will
remain in this mode until either a valid command is sent
to the device (other than
NOP
or Shutdown) or the
device is powered down and back up again. The
internal registers maintain their values while in
shutdown.
Once brought out of Shutdown mode, the part returns
to its previous state (see Section 5.2.1 "Ensuring
Valid Data in the Registers"
for exceptions to this
rule). This makes it possible to bring the device out of
shutdown mode using one command; send a com-
mand to select the current channel (or gain) and the
device will exit shutdown with the same state that
existed before shutdown.
5.3
Daisy-Chain Configuration
Multiple MCP6S91/2/3 devices can be connected in a
daisy-chain configuration by connecting the SO pin
from one device to the SI pin on the next device and
using common SCK and CS lines (Figure 5-3). This
approach reduces PCB layout complexity and uses
fewer PICmicro
microcontroller I/O pins.
The example in Figure 5-3 shows a daisy-chain
configuration with two devices, although any number of
devices can be configured this way. The MCP6S91 and
MCP6S92 can only be used at the far end of the daisy-
chain, because they do not have a serial data out (SO)
pin. As shown in Figure 5-4 and Figure 5-5, both SI and
SO data are sent in 16-bit (2 byte) words. These
devices abort any command that is not a multiple of 16
bits.
When using the daisy-chain configuration, the maxi-
mum clock speed possible is reduced to
5.8 MHz due
to the SO pin's propagation delay (see Electrical
Specifications).
The internal SPI shift register is automatically loaded
with zeros whenever CS goes high (a command is
executed). Thus, the first 16-bits out of the SO pin after
the CS line goes low are always zeros. This means that
the first command loaded into the next device in the
daisy-chain is a
NOP
. This feature makes it possible to
send shorter command and data byte strings when the
farthest devices do not need to change. For example, if
there were three devices on the chain, and only the
middle device needed changing, then only 32 bytes of
data need to be transmitted (for the first and middle
devices). The last device on the chain would receive a
NOP
when the CS pin is raised to execute the
command.
FIGURE 5-3:
Daisy-Chain Configuration.
PICmicro
SO
CS
SCK
SI
CS
SCK
SO
Device 1
Device 1
00100000 00000000
SO
CS
SCK
SI
Device 2
Device 2
00000000 00000000
Device 1
01000001 00000111
Device 2
00100000 00000000
4. Clock out the instruction and data
for Device 1 (16 clocks) to Device 1.
5. Device 1 automatically shifts data
from Device 1 to Device 2 (16 clocks).
6. Raise CS.
1. Set CS low.
2. Clock out the instruction and data
for device 2 (16 clocks) to Device 1.
3. Device 1 automatically clocks out all
zeros (first 16 clocks) to Device 2.
Microcontroller
2004 Microchip Technology Inc.
DS21908A-page 26
MCP6S91/2/3
FIGURE 5-4:
Serial Bus Sequence for Daisy-Chain Configuration; SPITM 0,0 Mode.
FIGURE 5-5:
Serial Bus Sequence for Daisy-Chain Configuration; SPITM 1,1 Mode.
1 2 3 4 5 6 7 8 9 10111213141516
bi
t 7
CS
SCK
SI
Instruction Byte
Data Byte
bi
t 0
bi
t 7
bi
t 0
SO
(first 16 bits out are always zeros)
1 2 3 4 5 6 7 8 9 10111213141516
bi
t
7
Instruction Byte
Data Byte
bi
t
0
bi
t
7
bi
t
0
for Device 2
for Device 2
for Device 1
for Device 1
bit
7
Instruction Byte
Data Byte
bit
0
bit
7
bit
0
for Device 2
for Device 2
1 2 3 4 5 6 7 8 9 10111213141516
bi
t 7
CS
SCK
SI
Instruction Byte
Data Byte
bi
t 0
bi
t 7
bi
t 0
SO
(first 16 bits out are always zeros)
1 2 3 4 5 6 7 8 9 10111213141516
bi
t
7
Instruction Byte
Data Byte
bi
t
0
bi
t
7
bi
t
0
for Device 2
for Device 2
for Device 1
for Device 1
bit
7
Instruction Byte
Data Byte
bit
0
bit
7
bit
0
for Device 2
for Device 2
2004 Microchip Technology Inc.
DS21908A-page 27
MCP6S91/2/3
6.0
APPLICATIONS INFORMATION
6.1
Changing External Reference
Voltage
Figure 6-1 shows a MCP6S91 with the V
REF
pin at
2.5V and V
DD
= 5.0V. This allows the PGA to amplify
signals centered on 2.5V, instead of ground-referenced
signals. The voltage reference MCP1525 is buffered by
a MCP6021, which gives a low output impedance
reference voltage from DC to high frequencies. The
source driving the V
REF
pin should have an output
impedance less than 0.1
to maintain reasonable gain
accuracy.
FIGURE 6-1:
PGA with Different External
Reference Voltage.
6.2
Capacitive Load and Stability
Large capacitive loads can cause stability problems
and reduced bandwidth for the MCP6S91/2/3 family of
PGAs (Figure 2-26 and Figure 2-28). As the load
capacitance increases, there is a corresponding
increase in frequency response peaking and step
response overshoot and ringing. This happens
because a large load capacitance decreases the
internal amplifier's phase margin and bandwidth.
When driving large capacitive loads with these PGAs
(i.e., > 60 pF), a small series resistor at the output
(R
ISO
in Figure 6-2) improves the internal amplifier's
stability by making the load resistive at higher
frequencies. The bandwidth will be generally lower
than the bandwidth with no capacitive load.
FIGURE 6-2:
PGA Circuit for Large
Capacitive Loads.
Figure 6-3 gives recommended R
ISO
values for
different capacitive loads. After selecting R
ISO
for your
circuit, double-check the resulting frequency response
peaking and step response overshoot on the bench.
Modify R
ISO
's value until the response is reasonable at
all gains.
FIGURE 6-3:
Recommended R
ISO
.
6.3
Layout Considerations
Good PC board layout techniques will help achieve the
performance shown in the Electrical Characteristics
and Typical Performance Curves. It will also help
minimize Electromagnetic Compatibility (EMC) issues.
6.3.1
COMPONENT PLACEMENT
Separate different circuit functions: digital from analog,
low-speed from high-speed, and low-power from high-
power. This will reduce crosstalk.
Keep sensitive traces short and straight. Separate
them from interfering components and traces. This is
especially important for high-frequency (low rise time)
signals.
V
DD
V
DD
V
DD
V
REF
V
IN
V
OUT
MCP1525
MCP6021
1F
MCP6S91
2.5V
REF
V
IN
V
OUT
MCP6S9X
R
ISO
C
L
10
100
1,000
10
100
1,000
10,000
L
oad Capacitance (F)
R
ec
om
m
e
n
d
ed
R
IS
O
(


)
10
p
100
p
1
n
10
n
2004 Microchip Technology Inc.
DS21908A-page 28
MCP6S91/2/3
6.3.2
SUPPLY BYPASS
Use a local bypass capacitor (0.01 F to 0.1 F) within
2 mm of the V
DD
pin. It must connect directly to the
ground plane. A multi-layer ceramic chip capacitor, or
high-frequency equivalent, works best.
Use a bulk bypass capacitor (2.2 F to 10 F) within
100 mm of the V
DD
pin. It needs to connect to the
ground plane. A multi-layer ceramic chip capacitor,
tantalum or high-frequency equivalent, works best.
This capacitor may be shared with other nearby analog
parts.
6.3.3
INPUT SOURCE IMPEDANCE
The sources driving the inputs of the PGAs need to
have reasonably low source impedance at higher
frequencies. Figure 6-4 shows how the external source
impedance (R
S
), PGA package pin capacitance (C
P1
)
and PGA package pin-to-pin capacitance (C
P2
) form a
positive feedback voltage divider network. Feedback to
the selected channel may cause frequency response
peaking and step response overshoot and ringing.
Feedback to an unselected channel will produce
crosstalk.
FIGURE 6-4:
Positive Feedback Path.
Figure 2-6 shows the crosstalk (referred to input) that
results when a hostile signal is connected to CH1, input
CH0 is selected and R
S
is connected from CH0 to
GND. A gain of +32 was chosen for this plot because it
demonstrates the worst-case behavior. Increasing R
S
increases the crosstalk as expected. At a source
impedance of 10 k
,
there is noticeable peaking in the
response; this is due to positive feedback.
Most designs should use a source resistance (R
S
) no
larger than 10 k
. Careful attention to layout parasitics
and proper component selection will help minimize this
effect. When a source impedance larger than 10 k
must be used, place a capacitor in parallel to C
P1
to
reduce the positive feedback. This capacitor needs to
be large enough to overcome gain (or crosstalk) peak-
ing, yet small enough to allow a reasonable signal
bandwidth.
6.3.4
SIGNAL COUPLING
The input pins of the MCP6S91/2/3 family of PGAs are
high-impedance. This makes them especially suscepti-
ble to capacitively-coupled noise. Using a ground plane
helps reduce this problem.
When noise is capacitively coupled, the ground plane
provides additional shunt capacitance to ground. When
noise is magnetically coupled, the ground plane
reduces the mutual inductance between traces.
Increasing the separation between traces makes a
significant difference.
Changing the direction of one of the traces can also
reduce magnetic coupling. It may help to locate guard
traces next to the victim trace. They should be on both
sides of, and as close as possible to, the victim trace.
Connect the guard traces to the ground plane at both
ends. Also connect long guard traces to the ground
plane in the middle.
6.3.5
HIGH-FREQUENCY ISSUES
Because the MCP6S91/2/3 PGAs' frequency response
reaches unity gain at 64 MHz when G = 16 and 32, it is
important to use good PCB layout techniques. Any
parasitic-coupling at high-frequency might cause
undesired peaking. Filtering high-frequency signals
(i.e., fast edge rates) can help. To minimize high-
frequency problems:
Use complete ground and power planes
Use HF, surface-mount components
Provide clean supply voltages and bypassing
Keep traces short and straight
Try a linear power supply (e.g., a LDO)
V
IN
MCP6S9X
V
OUT
R
S
C
P1
C
P2
2004 Microchip Technology Inc.
DS21908A-page 29
MCP6S91/2/3
6.4
Typical Applications
6.4.1
GAIN RANGING
Figure 6-5 shows a circuit that measures the current I
X
.
The circuit's performance benefits from changing the
gain on the PGA. Just as a hand-held multimeter uses
different measurement ranges to obtain the best
results, this circuit makes it easy to set a high gain for
small signals and a low gain for large signals. As a
result, the required dynamic range at the PGA's output
is less than at its input (by up to 30 dB).
FIGURE 6-5:
Wide Dynamic Range
Current Measurement Circuit.
6.4.2
SHIFTED GAIN RANGE PGA
Figure 6-6 shows a circuit using a MCP6291 at a gain
of +10 in front of a MCP6S91. This shifts the overall
gain range to +10 V/V to +320 V/V (from +1 V/V to
+32 V/V).
FIGURE 6-6:
PGA with Higher Gain
Range.
It is also easy to shift the gain range to lower gains (see
Figure 6-7). The MCP6291 acts as a unity gain buffer,
and the resistive voltage divider shifts the gain range
down to +0.1 V/V to +3.2 V/V (from +1 V/V to +32 V/V).
FIGURE 6-7:
PGA with Lower Gain
Range.
6.4.3
EXTENDED GAIN RANGE PGA
Figure 6-8 gives a +1 V/V to +1024 V/V gain range,
which is much greater than the range for a single PGA
(+1 V/V to +32 V/V). The first PGA provides input
multiplexing capability, while the second PGA only
needs one input. These devices can be daisy-chained
(Section 5.3 "Daisy-Chain Configuration").
FIGURE 6-8:
PGA with Extended Gain
Range.
6.4.4
MULTIPLE SENSOR AMPLIFIER
The multiple-channel PGAs (MCP6S92 and MCP6S93)
allow the user to select which sensor appears on the
output (see Figure 6-9). These devices can also change
the gain to optimize performance for each sensor.
FIGURE 6-9:
PGA with Multiple Sensor
Inputs.
I
X
V
OUT
MCP6S9X
R
S
V
IN
V
OUT
MCP6291
MCP6S91
1.11 k
10.0 k
V
IN
MCP6291
1.11 k
10.0 k
V
OUT
MCP6S91
V
IN
V
OUT
MCP6S92
MCP6S91
Sensor # 0
V
OUT
MCP6S93
Sensor # 1
2004 Microchip Technology Inc.
DS21908A-page 30
MCP6S91/2/3
6.4.5
EXPANDED INPUT PGA
Figure 6-10 shows cascaded MCP6S28 and
MCP6S92s PGAs that provide up to 9 input channels.
Obviously, Sensors #1-8 have a high total gain range
available, as explained in Section 6.4.3 "Extended
Gain Range PGA"
. These devices can be daisy-
chained (Section 5.3 "Daisy-Chain Configuration").
FIGURE 6-10:
PGA with Expanded Inputs.
6.4.6
PICmicro
MCU WITH EXPANDED
INPUT CAPABILITY
Figure 6-11 shows a MCP6S93 driving an analog input
to a PICmicro microcontroller. This greatly expands the
input capacity of the microcontroller, while adding the
ability to select the appropriate gain for each source.
FIGURE 6-11:
Expanded Input for a
PICmicro
Microcontroller.
6.4.7
ADC DRIVER
This family of PGAs is well suited for driving Analog-to-
Digital Converters (ADCs). The binary gains (1, 2, 4, 8,
16 and 32) effectively add five more bits to the input
range (see Figure 6-12). This works well for applica-
tions needing relative accuracy more than absolute
accuracy (e.g., power monitoring).
FIGURE 6-12:
PGA as an ADC driver.
At low gains, the ADC's Signal-to-Noise Ratio (SNR)
will dominate since the PGA's input noise voltage
density is so low (10 nV/
Hz @ 10 kHz, typ.). At high
gains, the PGA's noise will dominate the SNR, but it is
low enough to support most applications. These PGAs
add the flexibility of selecting the best gain for an
application.
The low-pass filter in the block diagram reduces the
integrated noise at the MCP6S92's output and serves
as an anti-aliasing filter. This filter may be designed
using Microchip's FilterLab
software, available at
www.microchip.com.
Sensor
V
OUT
MCP6S92
# 0
Sensors
MCP6S28
# 1-8
V
IN
SPI
TM
MCP6S93
PICmicro
Microcontroller
OUT
MCP3201
12-bit
ADC
3
MCP6S92
V
IN
Low-pass
Filter
2004 Microchip Technology Inc.
DS21908A-page 31
MCP6S91/2/3
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) (MCP6S91, MCP6S92)
Example:
8-Lead SOIC (150 mil) (MCP6S91, MCP6S92)
Example:
XXXXXXXX
XXXXYYWW
NNN
MCP6S91
E/P256
0424
MCP6S91
E/SN0424
256
8-Lead MSOP (MCP6S91, MCP6S92)
Example:
XXXXX
YWWNNN
6S91E
424256
Legend:
XX...X
Customer specific information*
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week `01')
NNN
Alphanumeric traceability code
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please check
with your Microchip Sales Office.
10-Lead MSOP (MCP6S93)
Example:
XXXXX
YWWNNN
6S93E
424256
2004 Microchip Technology Inc.
DS21908A-page 32
MCP6S91/2/3
8-Lead Plastic Dual In-line (P) 300 mil (PDIP)
B1
B
A1
A
L
A2
p
E
eB
c
E1
n
D
1
2
Units
INCHES*
MILLIMETERS
Dimension Limits
MIN
NOM
MAX
MIN
NOM
MAX
Number of Pins
n
8
8
Pitch
p
.100
2.54
Top to Seating Plane
A
.140
.155
.170
3.56
3.94
4.32
Molded Package Thickness
A2
.115
.130
.145
2.92
3.30
3.68
Base to Seating Plane
A1
.015
0.38
Shoulder to Shoulder Width
E
.300
.313
.325
7.62
7.94
8.26
Molded Package Width
E1
.240
.250
.260
6.10
6.35
6.60
Overall Length
D
.360
.373
.385
9.14
9.46
9.78
Tip to Seating Plane
L
.125
.130
.135
3.18
3.30
3.43
Lead Thickness
c
.008
.012
.015
0.20
0.29
0.38
Upper Lead Width
B1
.045
.058
.070
1.14
1.46
1.78
Lower Lead Width
B
.014
.018
.022
0.36
0.46
0.56
Overall Row Spacing
eB
.310
.370
.430
7.87
9.40
10.92
Mold Draft Angle Top
5
10
15
5
10
15
Mold Draft Angle Bottom
5
10
15
5
10
15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
JEDEC Equivalent: MS-001
Drawing No. C04-018
.010" (0.254mm) per side.
Significant Characteristic
2004 Microchip Technology Inc.
DS21908A-page 33
MCP6S91/2/3
8-Lead Plastic Small Outline (SN) Narrow, 150 mil (SOIC)
Foot Angle
0
4
8
0
4
8
15
12
0
15
12
0
Mold Draft Angle Bottom
15
12
0
15
12
0
Mold Draft Angle Top
0.51
0.42
0.33
.020
.017
.013
B
Lead Width
0.25
0.23
0.20
.010
.009
.008
c
Lead Thickness
0.76
0.62
0.48
.030
.025
.019
L
Foot Length
0.51
0.38
0.25
.020
.015
.010
h
Chamfer Distance
5.00
4.90
4.80
.197
.193
.189
D
Overall Length
3.99
3.91
3.71
.157
.154
.146
E1
Molded Package Width
6.20
6.02
5.79
.244
.237
.228
E
Overall Width
0.25
0.18
0.10
.010
.007
.004
A1
Standoff
1.55
1.42
1.32
.061
.056
.052
A2
Molded Package Thickness
1.75
1.55
1.35
.069
.061
.053
A
Overall Height
1.27
.050
p
Pitch
8
8
n
Number of Pins
MAX
NOM
MIN
MAX
NOM
MIN
Dimension Limits
MILLIMETERS
INCHES*
Units
2
1
D
n
p
B
E
E1
h
L
c
45
A2
A
A1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010" (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
Significant Characteristic
2004 Microchip Technology Inc.
DS21908A-page 34
MCP6S91/2/3
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
p
A
A1
A2
D
L
c
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
.037
.035
F
Footprint (Reference)
exceed .010" (0.254mm) per side.
Notes:
Drawing No. C04-111
*Controlling Parameter
Mold Draft Angle Top
Mold Draft Angle Bottom
Foot Angle
Lead Width
Lead Thickness
c
B
7
7
.004
.010
0
.006
.012
(F)
Dimension Limits
Overall Height
Molded Package Thickness
Molded Package Width
Overall Length
Foot Length
Standoff
Overall Width
Number of Pins
Pitch
A
L
E1
D
A1
E
A2
.016
.114
.114
.022
.118
.118
.002
.030
.193
.034
MIN
p
n
Units
.026
NOM
8
INCHES
1.00
0.95
0.90
.039
0.15
0.30
.008
.016
6
0.10
0.25
0
7
7
0.20
0.40
6
MILLIMETERS*
0.65
0.86
3.00
3.00
0.55
4.90
.044
.122
.028
.122
.038
.006
0.40
2.90
2.90
0.05
0.76
MIN
MAX
NOM
1.18
0.70
3.10
3.10
0.15
0.97
MAX
8
E1
E
B
n
1
2
Significant Characteristic
.184
.200
4.67
.5.08
2004 Microchip Technology Inc.
DS21908A-page 35
MCP6S91/2/3
10-Lead Plastic Micro Small Outline Package (MS) (MSOP)
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
.037 REF
F
Footprint
exceed .010" (0.254mm) per side.
Notes:
Drawing No. C04-021
*Controlling Parameter
Mold Draft Angle Top
Mold Draft Angle Bottom
Foot Angle
Lead Width
Lead Thickness
c
B
.003
.006
-
.009
Dimension Limits
Overall Height
Molded Package Thickness
Molded Package Width
Overall Length
Foot Length
Standoff
Overall Width
Number of Pins
Pitch
A
L
E1
D
A1
E
A2
.016
.024
.118 BSC
.118 BSC
.000
.030
.193 BSC
.033
MIN
p
n
Units
.020 TYP
NOM
10
INCHES
0.95 REF
-
0.23
.009
.012
0.08
0.15
-
-
0.23
0.30
MILLIMETERS*
0.50 TYP.
0.85
3.00 BSC
3.00 BSC
0.60
4.90 BSC
.043
.031
.037
.006
0.40
0.00
0.75
MIN
MAX
NOM
1.10
0.80
0.15
0.95
MAX
10
5
15
5
15
-
-
-
0
-
8
5
-
5
-
15
15
JEDEC Equivalent: MO-187
8
0
E
L
D
(F)
B
p
E1
n
A2
1
2
c
A1
A
L1
-
-
-
-
2004 Microchip Technology Inc.
DS21908A-page 36
MCP6S91/2/3
NOTES:
2004 Microchip Technology Inc.
DS21908A-page 37
MCP6S91/2/3
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office
.
Sales and Support
Device:
MCP6S91:
One-channel PGA
MCP6S91T: One-channel PGA
(Tape and Reel for SOIC and MSOP-8)
MCP6S92:
Two-channel PGA
MCP6S92T: Two-channel PGA
(Tape and Reel for SOIC and MSOP-8)
MCP6S93:
Two-channel PGA
MCP6S93T: Two-channel PGA
(Tape and Reel for MSOP-10)
Temperature Range:
E
= -40C to +125C
Package:
MS = Plastic Micro Small Outline (MSOP), 8-lead
P
= Plastic DIP (300 mil Body), 8-lead
SN = Plastic SOIC (150 mil Body), 8-lead
UN = Plastic Micro Small Outline (MSOP), 10-lead
Examples:
a)
MCP6S91-E/P:
One-channel PGA,
PDIP package.
b)
MCP6S91-E/SN:
One-channel PGA,
SOIC package.
c)
MCP6S91-E/MS:
One-channel PGA,
MSOP package.
a)
MCP6S92-E/MS:
Two-channel PGA,
MSOP-8 package.
b)
MCP6S92T-E/MS: Tape and Reel,
Two-channel PGA,
MSOP-8 package.
a)
MCP6S93-E/UN:
Two-channel PGA,
MSOP-10 package.
b)
MCP6S93T-E/UN: Tape and Reel,
Two-channel PGA,
MSOP-10 package.
PART NO.
-X
/XX
Package
Temperature
Range
Device
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
Your local Microchip sales office
2.
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
MCP6S91/2/3
DS21908A-page 38
2004 Microchip Technology Inc.
NOTES:
DS21908A-page 39
2004 Microchip Technology Inc.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of Microchip's products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K
EE
L
OQ
, micro
ID
, MPLAB, PIC, PICmicro,
PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,
SmartTel and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
2004, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as "unbreakable."
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company's quality system processes and
procedures are for its PICmicro
8-bit MCUs, K
EE
L
OQ
code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip's quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21908A-page 40
2004 Microchip Technology Inc.
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W
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ALES
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ERVICE
09/27/04