1996 Microchip Technology Inc.
Preliminary
DS21132C-page 1
FEATURES
Single 5.0V supply
Low power CMOS technology
- 1 mA active current typical
ORG pin selectable memory configuration
1024 x 8- or 512 x 16-bit organization (93C76)
2048 x 8- or 1024 x 16-bit organization (93C86)
Self-timed ERASE and WRITE cycles
(including auto-erase)
Automatic ERAL before WRAL
Power on/off data protection circuitry
Industry standard 3-wire serial I/O
Device status signal during ERASE/WRITE cycles
Sequential READ function
10,000,000 ERASE/WRITE cycles guaranteed
Data retention > 200 years
8-pin PDIP/SOIC package
Temperature ranges supported
DESCRIPTION
The Microchip Technology Inc. 93C76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93C76/86 is available in standard 8-pin DIP and 8-
pin surface mount SOIC packages.
- Commercial (C):
0
C to
+70
C
- Industrial
-40
C to
+85
C
- Automotive (E)
-40
C to +125
C
PACKAGE TYPES
BLOCK DIAGRAM
SOIC Package
DIP Package
CS
CLK
DI
DO
V
SS
PE
V
CC
ORG
CS
CLK
DI
DO
V
CC
PE
ORG
V
SS
93C76/86
93C76/86
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
DO
CS
CLK
V
CC
V
SS
Memory
Array
Address
Decoder
Data
Register
Counter
Address
Output
Buffer
Mode
Decode
Logic
Generator
Clock
DI
PE
93C76/86
8K/16K 5.0V Microwire
Serial EEPROM
Microwire is a registered trademark of National Semiconductor Incorporated.
This document was created with FrameMaker 4 0 4
93C76/86
DS21132C-page 2
Preliminary
1996 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
V
CC
...................................................................................7.0V
All inputs and outputs w.r.t. V
SS
............... -0.6V to Vcc +1.0V
Storage temperature ..................................... -65C to +150C
Ambient temp. with power applied................. -65C to +125C
Soldering temperature of leads (10 seconds) ............. +300C
ESD protection on all pins................................................ 4 kV
*Notice:
Stresses above those listed under "Maximum ratings"
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability
TABLE 1-1:
PIN FUNCTION TABLE
Name
Function
CS
CLK
DI
DO
V
SS
ORG
PE
V
CC
Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Memory Configuration
Program Enable
Power Supply
1.2
AC Test Conditions
AC Waveform:
V
LO
= 2.0V
V
HI
= Vcc - 0.2V
(Note 1)
V
HI
= 4.0V for
(Note 2)
Timing Measurement Reference Level
Input
0.5 V
CC
Output
0.5 V
CC
Note 1: For V
CC
4.0V
2: For V
CC
> 4.0V
TABLE 1-2:
DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= +4.5V to +5.5V
Commercial (C):
Tamb = 0
C to -40
C
Industrial (I):
Tamb = -40
C to +85
C
Automotive (E):
Tamb = -40
C to +125
C
Parameter
Symbol
Min.
Max.
Units
Conditions
High level input voltage
V
IH1
2.0
V
CC
+1
V
--
Low level input voltage
V
IL1
-0.3
0.8
V
--
Low level output voltage
V
OL1
--
0.4
V
I
OL
= 2.1 mA; V
CC
= 4.5V
V
OL2
--
0.2
V
I
OL
=100
A; V
CC
= 4.5V
High level output voltage
V
OH1
2.4
--
V
I
OH
= -400
A; V
CC
= 4.5V
V
OH2
V
CC
-0.2
--
V
I
OH
= -100
A; V
CC
= 4.5V.
Input leakage current
I
LI
-10
10
A
V
IN
= 0.1V to V
CC
Output leakage current
I
LO
-10
10
A
V
OUT
= 0.1V to V
CC
Pin capacitance
(all inputs/outputs)
C
INT
--
7
pF
(Note Note:)
Tamb = +25C, F
CLK
= 1 MHz
Operating current
I
CC
write
--
3
mA
F
CLK
= 2 MHz; V
CC
= 5.5V
I
CC
read
--
1.5
mA
F
CLK
= 2 MHz; V
CC
= 5.5V
Standby current
I
CCS
--
100
A
CLK = CS = 0V; V
CC
= 5.5V
Note:
This parameter is periodically sampled and not 100% tested.
1996 Microchip Technology Inc.
Preliminary
DS21132C-page 3
93C76/86
TABLE 1-3:
AC CHARACTERISTICS
TABLE 1-4:
INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)
TABLE 1-5:
INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)
Applicable over recommended operating ranges shown below unless otherwise noted:
V
CC
= +4.5V to +5.5V
Commercial (C):
Tamb = 0
C to -40
C
Industrial (I):
Tamb = -40
C to +85
C
Automotive (E):
Tamb = -40
C to +125
C
Parameter
Symbol
Min.
Max.
Units
Conditions
Clock frequency
F
CLK
--
2
MHz
Vcc
4.5V
Clock high time
T
CKH
300
--
ns
Clock low time
T
CKL
200
--
ns
Chip select setup time
T
CSS
50
--
ns
Relative to CLK
Chip select hold time
T
CSH
0
--
ns
Chip select low time
T
CSL
250
--
ns
Relative to CLK
Data input setup time
T
DIS
100
--
ns
Relative to CLK
Data input hold time
T
DIH
100
--
ns
Relative to CLK
Data output delay time
T
PD
--
400
ns
C
L
= 100 pF
Data output disable time
T
CZ
--
100
ns
(Note 1)
Status valid time
T
SV
--
500
ns
C
L
= 100 pF
Program cycle time
T
WC
--
10
ms
ERASE/WRITE mode (Note 2)
T
EC
--
15
ms
ERAL mode
T
WL
--
30
ms
WRAL mode
Endurance
--
10M
--
cycles
25
C, V
CC
= 5.0V, Block Mode
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: Typical program cycle is 4 ms per word.
3: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK Cycles
READ
1
10
X A8 A7 A6 A5 A4 A3 A2 A1 A0
--
D15 - D0
29
EWEN
1
00
1 1 X X X X X X X X
--
High-Z
13
ERASE
1
11
X A8 A7 A6 A5 A4 A3 A2 A1 A0
--
(RDY/BSY)
13
ERAL
1
00
1 0 X X X X X X X X
--
(RDY/BSY)
13
WRITE
1
01
X A8 A7 A6 A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
29
WRAL
1
00
0 1 X X X X X X X X
D15 - D0
(RDY/BSY)
29
EWDS
1
00
0 0 X X X X X X X X
--
High-Z
13
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK
Cycles
READ
1
10
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
--
D7 - D0
22
EWEN
1
00
1 1 X X X X X X X X X
--
High-Z
14
ERASE
1
11
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
--
(RDY/BSY)
14
ERAL
1
00
1 0 X X X X X X X X X
--
(RDY/BSY)
14
WRITE
1
01
X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
22
WRAL
1
00
0 1 X X X X X X X X X
D7 - D0
(RDY/BSY)
22
EWDS
1
00
0 0 X X X X X X X X X
--
High-Z
14
93C76/86
DS21132C-page 4
Preliminary
1996 Microchip Technology Inc.
TABLE 1-6:
INSTRUCTION SET FOR 93C86: ORG=1 (X16 ORGANIZATION)
TABLE 1-7:
INSTRUCTION SET FOR 93C86: ORG=0 (X8 ORGANIZATION)
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK Cycles
READ
1
10
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
--
D15 - D0
29
EWEN
1
00
1 1 X X X X X X X X
--
High-Z
13
ERASE
1
11
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
--
(RDY/BSY)
13
ERAL
1
00
1 0 X X X X X X X X
--
(RDY/BSY)
13
WRITE
1
01
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
D15 - D0
(RDY/BSY)
29
WRAL
1
00
0 1 X X X X X X X X
D15 - D0
(RDY/BSY)
29
EWDS
1
00
0 0 X X X X X X X X
--
High-Z
13
Instruction
SB
Opcode
Address
Data In
Data Out
Req. CLK Cycles
READ
1
10
A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
--
D7 - D0
22
EWEN
1
00
1 1 X X X X X X X X X
--
High-Z
14
ERASE
1
11
A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
--
(RDY/BSY)
14
ERAL
1
00
1 0 X X X X X X X X X
--
(RDY/BSY)
14
WRITE
1
01
A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
(RDY/BSY)
22
WRAL
1
00
0 1 X X X X X X X X X
D7 - D0
(RDY/BSY)
22
EWDS
1
00
0 0 X X X X X X X X X
--
High-Z
14
1996 Microchip Technology Inc.
Preliminary
DS21132C-page 5
93C76/86
2.0
PRINCIPLES OF OPERATION
When the ORG pin is connected to V
CC
, the x16 orga-
nization is selected. When it is connected to ground, the
x8 organization is selected. Instructions, addresses
and write data are clocked into the DI pin on the rising
edge of the clock (CLK). The DO pin is normally held in
a high-Z state except when reading data from the
device, or when checking the READY/BUSY status dur-
ing a programming operation. The READY/BUSY sta-
tus can be verified during an Erase/Write operation by
polling the DO pin; DO low indicates that programming
is still in progress, while DO high indicates the device is
ready. The DO will enter the high impedance state on
the falling edge of the CS.
2.1
START Condition
The START bit is detected by the device if CS and DI
are both HIGH with respect to the positive edge of CLK
for the first time.
Before a START condition is detected, CS, CLK, and DI
may change in any combination (except to that of a
START condition), without resulting in any device oper-
ation (READ, WRITE, ERASE, EWEN, EWDS, ERAL,
and WRAL). As soon as CS is HIGH, the device is no
longer in the standby mode.
An instruction following a START condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction are clocked
in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new start condition is
detected.
2.2
DI/DO
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a "bus conflict" to occur during the "dummy zero" that
precedes the READ operation, if A0 is a logic HIGH
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0, the
higher the voltage at the Data Out pin.
2.3
Erase/Write Enable and Disable
(EWEN, EWDS)
The 93C76/86 powers up in the Erase/Write Disable
(EWDS) state. All programming modes must be pre-
ceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or V
CC
is removed from the device. To protect against
accidental data disturb, the EWDS instruction can be
used to disable all Erase/Write functions and should fol-
low all programming operations. Execution of a READ
instruction is independent of both the EWEN and
EWDS instructions.
2.4
Data Protection
During power-up, all programming modes of operation
are inhibited until V
CC
has reached a level greater than
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
V
CC
has fallen below 1.4V.
The EWEN and EWDS commands give additional pro-
tection against accidentally programming during nor-
mal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.
93C76/86
DS21132C-page 6
Preliminary
1996 Microchip Technology Inc.
3.0
DEVICE OPERATION
3.1
READ
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 16 bit (x16 organization) or 8 bit
(x8 organization) output string. The output data bits will
toggle on the rising edge of the CLK and are stable after
the specified time delay (T
PD
). Sequential read is pos-
sible when CS is held high and clock transitions con-
tinue. The memory address pointer will automatically
increment and output data sequentially.
3.2
ERASE
The ERASE instruction forces all data bits of the spec-
ified address to the logical "1" state. The self-timed pro-
gramming cycle is initiated on the rising edge of CLK as
the last address bit (A0) is clocked in. At this point, the
CLK, CS, and DI inputs become don't cares.
The DO pin indicates the READY/BUSY status of the
device if the CS is high. The READY/BUSY status will
be displayed on the DO pin until the next start bit is
received as long as CS is high. Bringing the CS low will
place the device in standby mode and cause the DO pin
to enter the high impedance state. DO at logical "0" indi-
cates that programming is still in progress. DO at logical
"1" indicates that the register at the specified address
has been erased and the device is ready for another
instruction.
The ERASE cycle takes 3 ms per word (Typical).
3.3
WRITE
The WRITE instruction is followed by 16 bits (or by 8
bits) of data to be written into the specified address.
The self-timed programming cycle is initiated on the ris-
ing edge of CLK as the last data bit (D0) is clocked in.
At this point, the CLK, CS, and DI inputs become don't
cares.
The DO pin indicates the READY/BUSY status of the
device if the CS is high. The READY/BUSY status will
be displayed on the DO pin until the next start bit is
received as long as CS is high. Bringing the CS low will
place the device in standby mode and cause the DO pin
to enter the high impedance state. DO at logical "0" indi-
cates that programming is still in progress. DO at logical
"1" indicates that the register at the specified address
has been written and the device is ready for another
instruction.
The WRITE cycle takes 3 ms per word (Typical).
3.4
Erase All (ERAL)
The ERAL instruction will erase the entire memory
array to the logical "1" state. The ERAL cycle is identical
to the ERASE cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
on the rising edge of the last address bit (A0). Note that
the least significant 8 or 9 address bits are don't care
bits, depending on selection of x16 or x8 mode. Clock-
ing of the CLK pin is not necessary after the device has
entered the self clocking mode. The ERAL instruction is
guaranteed at Vcc = +4.5V to +5.5V.
The DO pin indicates the READY/BUSY status of the
device if the CS is high. The READY/BUSY status will
be displayed on the DO pin until the next start bit is
received as long as CS is high. Bringing the CS low will
place the device in standby mode and cause the DO pin
to enter the high impedance state. DO at logical "0" indi-
cates that programming is still in progress. DO at logical
"1" indicates that the entire device has been erased and
is ready for another instruction.
The ERAL cycle takes 15 ms maximum (8 ms typical).
3.5
Write All (WRAL)
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences on the
rising edge of the last address bit (A0). Note that the
least significant 8 or 9 address bits are don't cares,
depending on selection of x16 or x8 mode. Clocking of
the CLK pin is not necessary after the device has
entered the self clocking mode. The WRAL command
does include an automatic ERAL cycle for the device.
Therefore, the WRAL instruction does not require an
ERAL instruction but the chip must be in the EWEN sta-
tus. The WRAL instruction is guaranteed at Vcc = +4.5V
to +5.5V.
The DO pin indicates the READY/BUSY status of the
device if the CS is high. The READY/BUSY status will
be displayed on the DO pin until the next start bit is
received as long as CS is high. Bringing the CS low will
place the device in standby mode and cause the DO pin
to enter the high impedance state. DO at logical "0" indi-
cates that programming is still in progress. DO at logical
"1" indicates that the entire device has been written and
is ready for another instruction.
The WRAL cycle takes 30 ms maximum (16 ms typical).
1996 Microchip Technology Inc.
Preliminary
DS21132C-page 7
93C76/86
FIGURE 3-1:
SYNCHRONOUS DATA TIMING
FIGURE 3-2:
READ
FIGURE 3-3:
EWEN
FIGURE 3-4:
EWDS
The memory automatically cycles to the next register.
V
IH
V
IL
V
IH
V
IL
V
IH
V
OH
V
OL
V
OH
V
OL
V
IL
T
SV
T
DIS
T
PD
T
DIH
T
CSS
T
CKH
T
CKL
T
PD
T
CSH
T
CZ
T
CZ
CS
CLK
DI
DO
DO
(Program)
(Read)
STATUS VALID
1
1
0
A
N
A
0
D
N
D
N
D
0
D
0
...
...
...
HIGH IMPEDANCE
T
CSL
CS
CLK
DI
DO
0
EWEN
CS
CLK
DI
1
1
1
0
0
T
CSL
X
X
...
ORG=V
CC
, 8 X's
ORG=V
SS
, 9 X's
1
0
0
0
0
X
X
...
CS
CLK
DI
T
CSL
ORG=V
CC
, 8 X's
ORG=V
SS
, 9 X'S
93C76/86
DS21132C-page 8
Preliminary
1996 Microchip Technology Inc.
FIGURE 3-5:
WRITE
FIGURE 3-6:
WRAL
FIGURE 3-7:
ERASE
1
0
1
A
N
A
0
...
D
N
...
D
0
T
WC
READY
BUSY
HIGH IMPEDANCE
CS
CLK
DI
DO
STANDBY
T
CZ
Guarantee at Vcc = +4.5V to +5.5V.
1
0
0
0
1
X
...
X
D
N
...
D
0
BUSY
READY
HIGH IMPEDANCE
STANDBY
CS
CLK
DI
DO
ORG=V
CC
, 8 X's
ORG=V
SS
, 9 X's
T
WL
T
CZ
1
1
1
A
N
...
A
0
T
CZ
HIGH IMPEDANCE
CS
CLK
DI
DO
STANDBY
READY
BUSY
T
WC
...
1996 Microchip Technology Inc.
Preliminary
DS21132C-page 9
93C76/86
FIGURE 3-8:
ERAL
Guarantee at V
CC
= +4.5V to +5.5V.
ORG=V
CC
, 8 X's
ORG=V
SS
, 9 X's
1
0
0
1
0
X
X
...
CS
CLK
DI
DO
T
EC
T
CZ
HIGH IMPEDANCE
BUSY
READY
STANDBY
4.0
PIN DESCRIPTIONS
4.1
Chip Select (CS)
A HIGH level selects the device. A LOW level deselects
the device and forces it into standby mode. However, a
programming cycle which is already initiated will be
completed, regardless of the CS input signal. If CS is
brought LOW during a program cycle, the device will go
into standby mode as soon as the programming cycle
is completed.
CS must be LOW for 250 ns minimum (T
CSL
) between
consecutive instructions. If CS is LOW, the internal con-
trol logic is held in a RESET status.
4.2
Serial Clock (CLK)
The Serial Clock is used to synchronize the communi-
cation between a master device and the 93C76/86.
Opcode, address, and data bits are clocked in on the
positive edge of CLK. Data bits are also clocked out on
the positive edge of CLK.
CLK can be stopped anywhere in the transmission
sequence (at HIGH or LOW level) and can be continued
anytime with respect to clock HIGH time (T
CKH
) and
clock LOW time (T
CKL
). This gives the controlling mas-
ter freedom in preparing opcode, address, and data.
CLK is a "Don't Care" if CS is LOW (device deselected).
If CS is HIGH, but START condition has not been
detected, any number of clock cycles can be received
by the device without changing its status (i.e., waiting
for START condition).
CLK cycles are not required during the self-timed
WRITE (i.e., auto ERASE/WRITE) cycle.
After detection of a start condition the specified number
of clock cycles (respectively LOW to HIGH transitions of
CLK) must be provided. These clock cycles are
required to clock in all opcode, address, and data bits
before an instruction is executed (see Table 1-4 through
Table 1-7 for more details). CLK and DI then become
don't care inputs waiting for a new start condition to be
detected.
4.3
Data In (DI)
Data In is used to clock in a START bit, opcode,
address, and data synchronously with the CLK input.
4.4
Data Out (DO)
Data Out is used in the READ mode to output data syn-
chronously with the CLK input (T
PD
after the positive
edge of CLK).
This pin also provides READY/BUSY status information
during ERASE and WRITE cycles. READY/BUSY sta-
tus information is available when CS is high. It will be
displayed until the next start bit occurs as long as CS
stays high.
4.5
Organization (ORG)
When ORG is connected to V
CC
, the x16 memory orga-
nization is selected. When ORG is tied to V
SS
, the x8
memory organization is selected. There is an internal
pull-up resistor on the ORG pin that will select x16 orga-
nization when left unconnected.
4.6
Program Enable (PE)
This pin allows the user to enable or disable the ability
to write data to the memory array. If the PE pin is
floated or tied to V
CC
, the device can be programmed.
If the PE pin is tied to V
SS
, programming will be inhib-
ited. There is an internal pull-up on this device that
enables programming if this pin is left floating.
Note:
CS must go LOW between consecutive
instructions, except when performing a
sequential read (Refer to Section 3.1 for
more detail on sequential reads).
93C76/86
DS21132C-page 10
Preliminary
1996 Microchip Technology Inc.
NOTES:
DS21132C-page 11
Preliminary
1996 Microchip Technology Inc.
93C76/86
93C76/86 Product Identification System
To order or obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed
sales office.
93C76/86
\P
Package:
P
=
Plastic DIP (300 mil Body), 8-lead
SN
=
Plastic SOIC (150 mil Body), 8-lead
Temperature
Blank
=
0
C to +70
C
Range:
I
=
-40
C to +85
C
E
=
-40
C to +125
C
Device:
93C76/86
Microwire Serial EEPROM
93C76T/86T
Microwire Serial EEPROM (Tape and Reel)
Sales and Support
Products supported by a preliminary Data Sheet may possibly have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
Your local Microchip sales office (see below)
The Microchip Corporate Literature Center U.S. FAX: (602) 786-7277
The Microchip's Bulletin Board, via your local CompuServe number (CompuServe membership NOT required).
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
For latest version information and upgrade kits for Microchip Development Tools, please call 1-800-755-2345 or 1-602-786-7302.
1.
2.
3.
DS21132C-page 12
Preliminary
1996 Microchip Technology Inc.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No repre-
sentation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not autho-
rized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
W
ORLDWIDE
S
ALES
& S
ERVICE
ASIA/PACIFIC
Hong Kong
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Metroplaza
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Tel: 91 80 526 3148 Fax: 91 80 559 9840
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11/7/96
AMERICAS
Corporate Office
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Technical Support: 602 786-7627
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Dayton
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Los Angeles
Microchip Technology Inc.
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Tel: 714 263-1888 Fax: 714 263-1338
New York
Microchip Technology Inc.
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Hauppauge, NY 11788
Tel: 516 273-5305 Fax: 516 273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408 436-7950 Fax: 408 436-7955
Toronto
Microchip Technology Inc.
5925 Airport Road, Suite 200
Mississauga, Ontario L4V 1W1, Canada
Tel: 905 405-6279
Fax: 905 405-6253
All rights reserved.
1996, Microchip Technology Incorporated, USA. 11/96
Printed on recycled paper.
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