2003 Microchip Technology Inc.
DS21826A-page 1
M
MCP1700
Features
1.6 A Typical Quiescent Current
Input Operating Voltage Range: 2.3V to 6.0V
Output Voltage Range: 1.2V to 5.0V
250 mA Output Current for output voltages
2.5V
200 mA Output Current for output voltages < 2.5V
Low Dropout (LDO) voltage
- 178 mV typical @ 250 mA for V
OUT
= 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V
Stable with 1.0 F Ceramic Output capacitor
Short-Circuit Protection
Overtemperature Protection
Applications
Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
CO
2
Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Related Literature
AN765, "Using Microchip's Micropower LDOs",
DS00765, Microchip Technology Inc., 2002
AN766, "Pin-Compatible CMOS Upgrades to
BiPolar LDOs", DS00766,
Microchip Technology Inc., 2002
AN792, "A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application",
DS00792, Microchip Technology Inc., 2001
Description
The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 A of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.
The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential
(V
OUT
= 2.8V). The output voltage tolerance of the
MCP1700 is typically 0.4% at +25C and 3%
maximum over the operating junction temperature
range of -40C to +125C.
Output voltages available for the MCP1700 range from
1.2V to 5.0V. The LDO output is stable when using only
1 F output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT23, SOT89-3 and
TO92.
Package Types
1
3
2
V
IN
GND V
OUT
MCP1700
1
2
3
V
IN
GND
V
OUT
MCP1700
3-Pin SOT23-A
3-Pin SOT-89
3
2
1
GND V
IN
V
OUT
MCP1700
3-Pin TO-92
V
IN
Low Quiescent Current LDO
MCP1700
DS21826A-page 2
2003 Microchip Technology Inc.
Functional Block Diagrams
Typical Application Circuits
+
-
MCP1700
V
IN
V
OUT
GND
+V
IN
Error Amplifier
Voltage
Reference
Over Current
Over Temperature
MCP1700
GND
V
OUT
V
IN
C
IN
1 F Ceramic
C
OUT
1 F Ceramic
V
OUT
V
IN
(2.3V to 3.2V)
1.8V
I
OUT
150 mA
2003 Microchip Technology Inc.
DS21826A-page 3
MCP1700
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings
V
DD............................................................................................+
6.5V
All inputs and outputs w.r.t. .............(V
SS
-0.3V) to (V
IN
+0.3V)
Peak Output Current .................................... Internally Limited
Storage temperature .....................................-65C to +150C
Maximum Junction Temperature................................... 150C
Operating Junction Temperature...................-40C to +125C
ESD protection on all pins (HBM;MM)
...............
4 kV;
400V
Notice: Stresses above those listed under "Maximum Rat-
ings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1, I
LOAD
= 100 A, C
OUT
= 1 F
(X5R), C
IN
= 1 F (X5R), T
A
= +25C.
Boldface type applies for junction temperatures, T
J
(Note 6) of -40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
V
IN
2.3
--
6.0
V
Note 1
Input Quiescent Current
I
q
--
1.6
4
A
I
L
= 0 mA, V
IN
= V
R
+1V
Maximum Output Current
I
OUT_mA
250
200
--
--
--
--
mA
For V
R
2.5V
For V
R
<
2.5V
Output Short Circuit Current
I
OUT_SC
--
408
--
mA
V
IN
= V
R
+1V, V
OUT
= GND,
Current (peak current) measured
10 ms after short is applied.
Output Voltage Regulation
V
OUT
V
R
-3.0%
V
R
-2.0%
V
R
0.4
%
V
R
+3.0%
V
R
+2.0%
V
Note 2
V
OUT
Temperature Coefficient
TCV
OUT
--
50
--
ppm/C
Note 3
Line Regulation
V
OUT
/
(V
OUT
X
V
IN
)
-1.0
0.75
+1.0
%/V
(V
R
+1)V
V
IN
6V
Load Regulation
V
OUT
/V
OUT
-1.5
1.0
+1.5
%
I
L
= 0.1 mA to 250 mA for V
R
2.5V
I
L
= 0.1 mA to 200 mA for V
R
<
2.5V
Note 4
Dropout Voltage
V
R
>
2.5V
V
IN
-V
OUT
--
178
350
mV
I
L
= 250 mA, (Note 1, Note 5)
Dropout Voltage
V
R
<
2.5V
V
IN
-V
OUT
--
150
350
mV
I
L
= 200 mA, (Note 1, Note 5)
Output Rise Time
T
R
--
500
--
s
10% V
R
to 90% V
R
V
IN
= 0V to 6V,
R
L
= 50
resistive
Note 1:
The minimum V
IN
must meet two conditions: V
IN
2.3V and V
IN
(
V
R
+
3.0%
) +
V
DROPOUT
.
2:
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (V
IN
= V
R
+ 1.0V); I
OUT
= 100 A.
3:
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Temperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
R
+ 1V differential applied.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained
junction temperatures above 150C can impact the device reliability.
7:
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
MCP1700
DS21826A-page 4
2003 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
Output Noise
e
N
--
3
--
V/(Hz)
1/2
I
L
= 100 mA, f = 1 kHz, C
OUT
= 1 F
Power Supply Ripple
Rejection Ratio
PSRR
--
44
--
dB
f = 100 Hz, C
OUT
= 1 F, I
L
= 50 mA,
V
INAC
= 100 mV pk-pk, C
IN
= 0 F,
V
R
= 1.2V
Thermal Shutdown Protection
T
SD
--
140
--
C
V
IN
= V
R
+ 1, I
L
= 100 A
Electrical Characteristics: Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1, I
LOAD
= 100 A,
C
OUT
= 1 F (X5R), C
IN
= 1 F (X5R), T
A
= +25C.
Boldface type applies for junction temperatures, T
J
(Note 1) of -40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
T
A
-40
+125
C
Operating Temperature Range
T
A
-40
+125
C
Storage Temperature Range
T
A
-65
+150
C
Thermal Package Resistance
Thermal Resistance, SOT23-A
JA
--
335
--
C/W
Minimum Trace Width Single Layer
Board
--
230
--
C/W
Typical FR4 4-layer Application
Thermal Resistance, SOT89
JA
--
52
--
C/W
Typical, 1 square inch of copper
Thermal Resistance, TO-92
JA
--
131.9
--
C/W
EIA/JEDEC JESD51-751-7
4-Layer Board
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained
junction temperatures above 150C can impact the device reliability.
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1, I
LOAD
= 100 A, C
OUT
= 1 F
(X5R), C
IN
= 1 F (X5R), T
A
= +25C.
Boldface type applies for junction temperatures, T
J
(Note 6) of -40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
The minimum V
IN
must meet two conditions: V
IN
2.3V and V
IN
(
V
R
+
3.0%
) +
V
DROPOUT
.
2:
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (V
IN
= V
R
+ 1.0V); I
OUT
= 100 A.
3:
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Temperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
R
+ 1V differential applied.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150C rating. Sustained
junction temperatures above 150C can impact the device reliability.
7:
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
2003 Microchip Technology Inc.
DS21826A-page 5
MCP1700
2.0
TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated: V
R
= 1.8V, C
OUT
= 1 F Ceramic (X5R), C
IN
= 1 F Ceramic (X5R), I
L
= 100 A,
T
A
= +25C, V
IN
= V
R
+1V.
Note: Junction Temperature (T
J
) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
FIGURE 2-1:
Input Quiescent Current vs.
Input Voltage.
FIGURE 2-2:
Ground Current vs. Load
Current.
FIGURE 2-3:
Quiescent Current vs.
Junction Temperature.
FIGURE 2-4:
Output Voltage vs. Input
Voltage (V
R
= 1.2V).
FIGURE 2-5:
Output Voltage vs. Input
Voltage (V
R
= 1.8V).
FIGURE 2-6:
Output Voltage vs. Input
Voltage (V
R
= 2.8V).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Input Voltage (V)
Quiescent Current (A)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 1.2V
I
OUT
= 0 A
0
5
10
15
20
25
30
35
40
45
50
0
25
50
75
100
125
150
175
200
225
250
Load Current (mA)
Ground Current (A)
V
R
= 2.8V
T
J
= - 40C
T
J
= +25C
T
J
= +125C
1.25
1.50
1.75
2.00
2.25
2.50
-40 -25 -10
5
20
35
50
65
80
95 110 125
Junction Temperature (C)
Quiscent Current (A)
V
R
= 5.0V
V
R
= 2.8V
V
R
= 1.2V
V
IN
= V
R
+ 1V
I
OUT
= 0 A
1.190
1.192
1.194
1.196
1.198
1.200
1.202
1.204
1.206
2
2.5
3
3.5
4
4.5
5
5.5
6
Input Voltage (V)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 1.2V
I
OUT
= 0.1 mA
1.77
1.775
1.78
1.785
1.79
1.795
1.8
2
2.5
3
3.5
4
4.5
5
5.5
6
Input Voltage (V)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 1.8V
I
OUT
= 0.1 mA
2.778
2.780
2.782
2.784
2.786
2.788
2.790
2.792
2.794
2.796
2.798
2.800
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6
Input Voltage (V)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 2.8V
I
OUT
= 0.1 mA
MCP1700
DS21826A-page 6
2003 Microchip Technology Inc.
Note: Unless otherwise indicated: V
R
= 1.8V, C
OUT
= 1 F Ceramic (X5R), C
IN
= 1 F Ceramic (X5R), I
L
= 100 A,
T
A
= +25C, V
IN
= V
R
+1V.
FIGURE 2-7:
Output Voltage vs. Input
Voltage (V
R
= 5.0V).
FIGURE 2-8:
Output Voltage vs. Load
Current (V
R
= 1.2V).
FIGURE 2-9:
Output Voltage vs. Load
Current (V
R
= 1.8V).
FIGURE 2-10:
Output Voltage vs. Load
Current (V
R
= 2.8V).
FIGURE 2-11:
Output Voltage vs. Load
Current (V
R
= 5.0V).
FIGURE 2-12:
Dropout Voltage vs. Load
Current (V
R
= 2.8V).
4.955
4.960
4.965
4.970
4.975
4.980
4.985
4.990
4.995
5.000
5
5.2
5.4
5.6
5.8
6
Input Voltage (V)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 5.0V
I
OUT
= 0.1 mA
1.15
1.16
1.17
1.18
1.19
1.20
1.21
0
25
50
75
100
125
150
175
200
Load Curent (mA)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 1.2V
V
IN
= V
R
+ 1V
1.778
1.780
1.782
1.784
1.786
1.788
1.790
1.792
0
25
50
75
100
125
150
175
200
Load Current (mA)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 1.8V
V
IN
= V
R
+ 1V
2.778
2.780
2.782
2.784
2.786
2.788
2.790
2.792
2.794
2.796
2.798
0
50
100
150
200
250
Load Current (mA)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 2.8V
V
IN
= V
R
+ 1V
4.955
4.960
4.965
4.970
4.975
4.980
4.985
4.990
4.995
5.000
0
50
100
150
200
250
Load Current (mA)
Output Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 5.0V
V
IN
= V
R
+ 1V
0
0.05
0.1
0.15
0.2
0.25
0
25
50
75
100
125
150
175
200
225
250
Load Current (mA)
Dropout Votage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 2.8V
2003 Microchip Technology Inc.
DS21826A-page 7
MCP1700
Note: Unless otherwise indicated: V
R
= 1.8V, C
OUT
= 1 F Ceramic (X5R), C
IN
= 1 F Ceramic (X5R), I
L
= 100 A,
T
A
= +25C, V
IN
= V
R
+1V.
FIGURE 2-13:
Dropout Voltage vs. Load
Current (V
R
= 5.0V).
FIGURE 2-14:
Power Supply Ripple
Rejection vs. Frequency (V
R
= 1.2V).
FIGURE 2-15:
Power Supply Ripple
Rejection vs. Frequency (V
R
= 2.8V).
FIGURE 2-16:
Noise vs. Frequency.
FIGURE 2-17:
Dynamic Load Step
(V
R
= 1.2V).
FIGURE 2-18:
Dynamic Load Step
(V
R
= 1.8V).
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0
25
50
75
100
125
150
175
200
225
250
Load Current (mA)
Dropout Voltage (V)
T
J
= - 40C
T
J
= +25C
T
J
= +125C
V
R
= 5.0V
0.01
0.1
1
10
0.01
0.1
1
10
100
1000
Frequency (KHz)
Noise
(mV/
Hz)
V
IN
= 2.5V
V
R
= 1.2V
I
OUT
= 50mA
V
IN
= 2.8V
V
R
= 1.8V
I
OUT
= 50mA
V
IN
= 3.8V
V
R
= 2.8V
I
OUT
= 50mA
MCP1700
DS21826A-page 8
2003 Microchip Technology Inc.
Note: Unless otherwise indicated: V
R
= 1.8V, C
OUT
= 1 F Ceramic (X5R), C
IN
= 1 F Ceramic (X5R), I
L
= 100 A,
T
A
= +25C, V
IN
= V
R
+1V.
FIGURE 2-19:
Dynamic Load Step
(V
R
= 2.8V)
.
FIGURE 2-20:
Dynamic Load Step
(V
R
= 1.8V)
.
FIGURE 2-21:
Dynamic Load Step
(V
R
= 2.8V)
.
FIGURE 2-22:
Dynamic Load Step
(V
R
= 5.0V)
.
FIGURE 2-23:
Dynamic Line Step
(V
R
= 2.8V)
.
FIGURE 2-24:
Startup From V
IN
(V
R
= 1.2V).
2003 Microchip Technology Inc.
DS21826A-page 9
MCP1700
Note: Unless otherwise indicated: V
R
= 1.8V, C
OUT
= 1 F Ceramic (X5R), C
IN
= 1 F Ceramic (X5R), I
L
= 100 A,
T
A
= +25C, V
IN
= V
R
+1V.
FIGURE 2-25:
Start-up From V
IN
(V
R
= 1.8V).
FIGURE 2-26:
Start-up From V
IN
(V
R
= 2.8V).
FIGURE 2-27:
Load Regulation vs.
Junction Temperature (V
R
= 1.8V).
FIGURE 2-28:
Load Regulation vs.
Junction Temperature (V
R
= 2.8V).
FIGURE 2-29:
Load Regulation vs.
Junction Temperature (V
R
= 5.0V).
FIGURE 2-30:
Line Regulation vs.
Temperature (V
R
= 1.2V, 1.8V, 2.8V).
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
-40
-25
-10
5
20
35
50
65
80
95
110 125
Junction Temperature (C)
Load Regulation (%)
V
R
= 1.8V
I
OUT
= 0 to 200 mA
V
IN
= 2.2V
V
IN
= 5.0V
V
IN
= 3.5V
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-40
-25
-10
5
20
35
50
65
80
95
110 125
Junction Temperature (C)
Load Regulation (%)
V
R
= 2.8V
I
OUT
= 0 to 250 mA
V
IN
= 5.0V
V
IN
= 4.3V
V
IN
= 3.3V
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
-40
-25
-10
5
20
35
50
65
80
95
110 125
Junction Temperature (C)
Load Regulation (%)
V
R
= 5.0V
I
OUT
= 0 to 250 mA
V
IN
= 5.5V
V
IN
= 6.0V
-0.3
-0.25
-0.2
-0.15
-0.1
-0.05
0
0.05
0.1
-40 -25 -10
5
20
35
50
65
80
95 110 125
Junction Temperature (C)
Line Regulation (%/V)
V
R
= 1.8V
V
R
= 1.2V
V
R
= 2.8V
MCP1700
DS21826A-page 10
2003 Microchip Technology Inc.
3.0
MCP1700 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1700 PIN FUNCTION TABLE
3.1
Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (1.6 A typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2
Regulated Output Voltage (V
OUT
)
Connect V
OUT
to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO V
OUT
pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.3
Unregulated Input Voltage Pin
(V
IN
)
Connect V
IN
to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 F of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum electro-
lytic. The low ESR characteristics of the ceramic will
yield better noise and PSRR performance at high-
frequency.
Pin No.
SOT23-A
Pin No.
SOT89
Pin No.
TO-92
Name
Function
1
1
1
GND
Ground Terminal
2
3
3
V
OUT
Regulated Voltage Output
3
2
2
V
IN
Unregulated Supply Voltage
2003 Microchip Technology Inc.
DS21826A-page 11
MCP1700
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2
Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
4.3 Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
FIGURE 4-1:
Block Diagram.
+
-
MCP1700
V
IN
V
OUT
GND
+V
IN
Error Amplifier
Voltage
Reference
Overcurrent
Overtemperature
MCP1700
DS21826A-page 12
2003 Microchip Technology Inc.
5.0
FUNCTIONAL DESCRIPTION
The MCP1700 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1700 is from 0 mA to 250 mA (V
R
2.5V). The
input operating voltage range is from 2.3V to 6.0V,
making it capable of operating from two, three or four
alkaline cells or a single Li-Ion cell battery input.
5.1
Input
The input of the MCP1700 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10
)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 F ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.2
Output
The maximum rated continuous output current for the
MCP1700 is 250 mA (V
R
2.5V). For applications
where V
R
< 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 F is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
esr range on the output capacitor can range from 0
to 2.0
.
5.3
Output Rise time
When powering up the internal reference output, the
typical output rise time of 500 s is controlled to
prevent overshoot of the output voltage.
2003 Microchip Technology Inc.
DS21826A-page 13
MCP1700
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1700 is most commonly used as a voltage
regulator. It's low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(1.6 A x V
IN
). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION
The maximum continuous operating junction
temperature specified for the MCP1700 is +125
C
.
To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
JA
). The thermal resistance from junction to
ambient for the SOT23 pin package is estimated at
230
C/W.
EQUATION
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION
EQUATION
EQUATION
Package Type = SOT23
Input Voltage Range = 2.3V to 3.2V
V
IN
maximum = 3.2V
V
OUT
typical = 1.8V
I
OUT
= 150 mA maximum
MCP1700
GND
V
OUT
V
IN
C
IN
1 F Ceramic
C
OUT
1 F Ceramic
V
OUT
V
IN
(2.3V to 3.2V)
1.8V
I
OUT
150 mA
P
LDO
V
IN MAX
)
(
)
V
OUT MIN
(
)
(
)
I
OUT MAX
)
(
)
=
P
LDO
= LDO Pass device internal power dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
T
J MAX
(
)
P
TOTAL
R
JA
T
AMA X
+
=
T
J(MAX)
= Maximum continuous junction
temperature.
P
TOTAL
= Total device power dissipation.
R
JA
= Thermal resistance from junction to ambient.
T
AMAX
= Maximum ambient temperature.
P
D MAX
(
)
T
J MAX
(
)
T
A MAX
(
)
(
)
R
JA
---------------------------------------------------
=
P
D(MAX)
= Maximum device power dissipation.
T
J(MAX)
= Maximum continuous junction
temperature.
T
A(MAX)
= Maximum ambient temperature.
R
JA
= Thermal resistance from junction to ambient.
T
J RISE
(
)
P
D MAX
(
)
R
JA
=
T
J(RISE)
= Rise in device junction temperature over
the ambient temperature.
P
TOTAL
= Maximum device power dissipation.
R
JA
= Thermal resistance from junction to ambient.
T
J
T
J RISE
(
)
T
A
+
=
T
J
= Junction Temperature.
T
J(RISE)
= Rise in device junction temperature over
the ambient temperature.
T
A
= Ambient temperature.
MCP1700
DS21826A-page 14
2003 Microchip Technology Inc.
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1
POWER DISSIPATION EXAMPLE
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (R
JA
) is derived
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, "High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages". The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, "A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application", (DS00792), for more information regarding
this subject.
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
Maximum Package Power Dissipation at +40C
Ambient Temperature
6.4
Voltage Reference
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.
FIGURE 6-2:
Using the MCP1700 as a
voltage reference.
6.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700
.
The typical current limit for the
MCP1700 is 550 mA (T
A
+25C).
Package
Package Type = SOT23
Input Voltage
V
IN
= 2.3V to 3.2V
LDO Output Voltages and Currents
V
OUT
= 1.8V
I
OUT
= 150 mA
Maximum Ambient Temperature
T
A(MAX)
= +40C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V
IN
to V
OUT
).
P
LDO(MAX)
= (V
IN(MAX)
- V
OUT(MIN)
) x I
OUT(MAX)
P
LDO
= (3.2V - (0.97 x 1.8V)) x 150 mA
P
LDO
= 218.1 milli-Watts
T
J(RISE)
= P
TOTAL
x Rq
JA
T
JRISE
= 218.1 milli-Watts x 230.0
C/Watt
T
JRISE
= 50.2
C
T
J
= T
JRISE
+ T
A(MAX)
T
J
= 90.2C
SOT23 (230.0C/Watt = R
JA
)
P
D(MAX)
= (125C - 40C) / 230C/W
P
D(MAX)
= 369.6 milli-Watts
SOT89 (52C/Watt = R
JA
)
P
D(MAX)
= (125C - 40C) / 52C/W
P
D(MAX)
= 1.635 Watts
TO92 (131.9C/Watt = R
JA
)
P
D(MAX)
= (125C - 40C) / 131.9C/W
P
D(MAX)
= 644 milli-Watts
PICmicro
MCP1700
GND
V
IN
C
IN
1 F
C
OUT
1 F
Bridge Sensor
V
OUT
V
REF
ADO
AD1
Ratio Metric Reference
1 A Bias
Microcontroller
2003 Microchip Technology Inc.
DS21826A-page 15
MCP1700
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
3-Pin SOT-23A
CKNN
3-Pin SOT-89
CUYYWW
NNN
3-Pin TO-92
XXXXXX
XXXXXX
YWWNNN
Standard
Extended Temp
Symbol
Voltage *
CK
1.2
CM
1.8
CP
2.5
CR
3.0
CS
3.3
CU
5.0
Legend: XX...X
Customer specific information*
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
Week code (week of January 1 is week `01')
NNN
Alphanumeric traceability code
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
Example:
1700
1202E
313256
* Custom output voltages available upon request.
Contact your local Microchip sales office for more
information.
MCP1700
DS21826A-page 16
2003 Microchip Technology Inc.
3-Lead Plastic Small Outline Transistor (TT) (SOT-23)
10
5
0
10
5
0
Mold Draft Angle Bottom
10
5
0
10
5
0
Mold Draft Angle Top
0.51
0.44
0.37
.020
.017
.015
B
Lead Width
0.18
0.14
0.09
.007
.006
.004
c
Lead Thickness
10
5
0
10
5
0
Foot Angle
0.55
0.45
0.35
.022
.018
.014
L
Foot Length
3.04
2.92
2.80
.120
.115
.110
D
Overall Length
1.40
1.30
1.20
.055
.051
.047
E1
Molded Package Width
2.64
2.37
2.10
.104
.093
.083
E
Overall Width
0.10
0.06
0.01
.004
.002
.000
A1
Standoff
1.02
0.95
0.88
.040
.037
.035
A2
Molded Package Thickness
1.12
1.01
0.89
.044
.040
.035
A
Overall Height
1.92
.076
p1
Outside lead pitch (basic)
0.96
.038
p
Pitch
3
3
n
Number of Pins
MAX
NOM
MIN
MAX
NOM
MIN
Dimension Limits
MILLIMETERS
INCHES*
Units
2
1
p
D
B
n
E
E1
L
c
A2
A
A1
p1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010" (0.254mm) per side.
JEDEC Equivalent: TO-236
Drawing No. C04-104
Significant Characteristic
2003 Microchip Technology Inc.
DS21826A-page 17
MCP1700
3-Lead Plastic Small Outline Transistor Header (MB) (SOT-89)
0.56
0.44
.022
.017
B
Lead 2 Width
0.44
0.35
.017
.014
c
Lead Thickness
1.83
1.62
.072
.064
D1
Tab Length
4.60
4.40
.181
.173
D
Overall Length
2.29
2.13
.090
.084
E1
Molded Package Width at Top
4.25
3.94
.167
.155
H
Overall Width
1.60
1.40
.063
.055
A
Overall Height
3.00 BSC
.118 BSC
p1
Outside lead pitch (basic)
1.50 BSC
.059 BSC
p
Pitch
MAX
MIN
MAX
MIN
Dimension Limits
MILLIMETERS*
INCHES
Units
exceed .005" (0.127mm) per side.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
Notes:
JEDEC Equivalent: TO-243
Drawing No. C04-29
*Controlling Parameter
Foot Length
L
.035
.047
0.89
1.20
Leads 1 & 3 Width
B1
.014
.019
0.36
0.48
Molded Package Width at Base
E
.090
.102
2.29
2.60
D1
H
L
B1
B
B1
p
p1
E
C
A
D
1
2
3
E1
MCP1700
DS21826A-page 18
2003 Microchip Technology Inc.
3-Lead Plastic Transistor Outline (TO) (TO-92)
4
3
2
4
3
2
Mold Draft Angle Bottom
6
5
4
6
5
4
0.56
0.48
0.41
.022
.019
.016
B
Lead Width
0.51
0.43
0.36
.020
.017
.014
c
Lead Thickness
2.41
2.29
2.16
.095
.090
.085
R
Molded Package Radius
4.95
4.64
4.32
.195
.183
.170
D
Overall Length
4.95
4.71
4.45
.195
.186
.175
E1
Overall Width
3.94
3.62
3.30
.155
.143
.130
A
Bottom to Package Flat
1.27
.050
p
Pitch
3
3
n
Number of Pins
MAX
NOM
MIN
MAX
NOM
MIN
Dimension Limits
MILLIMETERS
INCHES*
Units
R
n
1
3
p
L
B
A
c
1
D
2
E1
Tip to Seating Plane
L
.500
.555
.610
12.70
14.10
15.49
*Controlling Parameter
Mold Draft Angle Top
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010" (0.254mm) per side.
JEDEC Equivalent: TO-92
Drawing No. C04-101
2003 Microchip Technology Inc.
DS21826A-page 19
MCP1700
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office
.
Sales and Support
Device:
MCP1700: Low Quiescent Current LDO
Tape and Reel:
Tape and Reel only applies to SOT-23 and SOT-89 devices
Standard Output
Voltage: *
120 = 1.2V
180 = 1.8V
250 = 2.5V
300 = 3.0V
330 = 3.3V
500 = 5.0V
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information
Tolerance:
2
= 2%
Temperature Range:
E
= -40C to +125C (Extended)
Package:
TO = 3-lead TO-92
MB = 3-lead SOT89
TT = 3-lead SOT23
Examples:
TO-92 Package:
a)
MCP1700-1202E/TO:
1.2V V
OUT
b)
MCP1700-1802E/TO:
1.8V V
OUT
c)
MCP1700-2502E/TO:
2.5V V
OUT
d)
MCP1700-3002E/TO:
3.0V V
OUT
e)
MCP1700-3302E/TO:
3.3V V
OUT
f)
MCP1700-5002E/TO:
5.0V V
OUT
SOT89 Package:
a)
MCP1700T-1202E/MB: 1.2V V
OUT
b)
MCP1700T-1802E/MB: 1.8V V
OUT
c)
MCP1700T-2502E/MB: 2.5V V
OUT
d)
MCP1700T-3002E/MB: 3.0V V
OUT
e)
MCP1700T-3302E/MB: 3.3V V
OUT
f)
MCP1700T-5002E/MB: 5.0V V
OUT
SOT23 Package:
a)
MCP1700T-1202E/TT:
1.2V V
OUT
b)
MCP1700T-1802E/TT:
1.8V V
OUT
c)
MCP1700T-2502E/TT:
2.5V V
OUT
d)
MCP1700T-3002E/TT:
3.0V V
OUT
e)
MCP1700T-3302E/TT:
3.3V V
OUT
f)
MCP1700T-5002E/TT:
5.0V V
OUT
PART NO.
X-
XXX
Voltage
Tape &
Reel
MCP1700
X
Tolerance
X
Temp.
Range
XX
Package
Output
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
Your local Microchip sales office
2.
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
MCP1700
DS21826A-page 20
2003 Microchip Technology Inc.
NOTES:
2003 Microchip Technology Inc.
DS21826A-page 21
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip's products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
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The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, K
EE
L
OQ
, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE and PowerSmart are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER,
SEEVAL and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Application Maestro, dsPICDEM, dsPICDEM.net, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
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PowerMate, PowerTool, rfLAB, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartTel and Total Endurance are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as "unbreakable."
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company's quality system processes and
procedures are QS-9000 compliant for its
PICmicro
8-bit MCUs, K
EE
L
OQ
code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip's quality system for the
design and manufacture of development
systems is ISO 9001 certified.
DS21826A-page 22
2003 Microchip Technology Inc.
M
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Atlanta
3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Tel: 770-640-0034
Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848
Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, IN 46902
Tel: 765-864-8360
Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888
Fax: 949-263-1338
Phoenix
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966
Fax: 480-792-4338
San Jose
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950
Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699
Fax: 905-673-6509
ASIA/PACIFIC
Australia
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100
Fax: 86-10-85282104
China - Chengdu
Rm. 2401-2402, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200
Fax: 86-28-86766599
China - Fuzhou
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506
Fax: 86-591-7503521
China - Hong Kong SAR
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
China - Shanghai
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700
Fax: 86-21-6275-5060
China - Shenzhen
Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Tel: 86-755-82901380
Fax: 86-755-8295-1393
China - Shunde
Room 401, Hongjian Building
No. 2 Fengxiangnan Road, Ronggui Town
Shunde City, Guangdong 528303, China
Tel: 86-765-8395507 Fax: 86-765-8395571
China - Qingdao
Rm. B505A, Fullhope Plaza,
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Tel: 86-532-5027355 Fax: 86-532-5027205
India
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O'Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5932 or
82-2-558-5934
Singapore
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Kaohsiung Branch
30F - 1 No. 8
Min Chuan 2nd Road
Kaohsiung 806, Taiwan
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Taiwan
Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45-4420-9895 Fax: 45-4420-9910
France
Parc d'Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy
Via Quasimodo, 12
20025 Legnano (MI)
Milan, Italy
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands
P. A. De Biesbosch 14
NL-5152 SC Drunen, Netherlands
Tel: 31-416-690399
Fax: 31-416-690340
United Kingdom
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44-118-921-5869
Fax: 44-118-921-5820
07/28/03
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