2002 Microchip Technology Inc.
DS21335B-page 1
TC1014/TC1015/TC1185
Features
Extremely Low Supply Current (50
A, Typ.)
Very Low Dropout Voltage
Choice of 50mA (TC1014), 100mA (TC1015) and
150mA (TC1016) Output
High Output Voltage Accuracy
Standard or Custom Output Voltages
Power Saving Shutdown Mode
Reference Bypass Input for Ultra Low-Noise
Operation
Over Current and Over Temperature Protection
Space-Saving 5-Pin SOT-23A Package
Pin Compatible Upgrades for Bipolar Regulators
Applications
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
Device Selection Table
NOTE: xx indicates output voltages. Available
output
voltages: 1.8, 2.5, 2.6, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0.
Other output voltages are available. Please contact Microchip
Technology Inc. for details.
Package Type
Part Number
Package
Junction
Temp. Range
TC1014-xxVCT
5-Pin SOT-23A
-40C to +125C
TC1015-xxVCT
5-Pin SOT-23A
-40C to +125C
TC1185-xxVCT
5-Pin SOT-23A
-40C to +125C
Bypass
SHDN
5
5-Pin SOT-23A
TC1014
TC1015
TC1185
1
3
4
2
V
IN
V
OUT
GND
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass
TC1014/TC1015/TC1185
DS21335B-page 2
2002 Microchip Technology Inc.
General Description
The
TC1014/TC1015/TC1185
are
high
accuracy
(typically 0.5%) CMOS upgrades for older (bipolar)
low dropout regulators such as the LP2980. Designed
specifically for battery-operated systems, the devices'
CMOS construction eliminates wasted ground current,
significantly extending battery life. Total supply current
is typically 50
A at full load (20 to 60 times lower than
in bipolar regulators).
The devices' key features include ultra low noise oper-
ation (plus optional Bypass input), fast response to step
changes in load, and very low dropout voltage
typically 85mV (TC1014); 180mV (TC1015); and
270mV (TC1185) at full load. Supply current is reduced
to 0.5
A (max) and V
OUT
falls to zero when the
shutdown input is low. The devices incorporate both
over-temperature and over-current protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1
F and have a maximum output
current of 50mA, 100mA and 150mA, respectively. For
higher output current regulators, please see the
TC1107/TC1108/TC1173 (I
OUT
= 300mA) data sheets.
Typical Application
TC1014
TC1015
TC1185
V
OUT
SHDN
GND
Bypass
470pF
Reference
Bypass Cap
(Optional)
1
F
+
V
IN
V
IN
V
OUT
1
5
2
4
3
Shutdown Control
(from Power Control Logic)
2002 Microchip Technology Inc.
DS21335B-page 3
TC1014/TC1015/TC1185
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (V
IN
+ 0.3V)
Power Dissipation ............... Internally Limited (Note 7)
Maximum Voltage on Any Pin .........V
IN
+0.3V to -0.3V
Operating Temperature Range ......-40C < T
J
< 125C
Storage Temperature ......................... -65C to +150C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V
IN
= V
R
+ 1V, I
L
= 100
A, C
L
= 3.3
F, SHDN > V
IH
, T
A
= 25C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40C to +125C.
Symbol
Parameter
Min
Typ
Max
Units
Device
Test Conditions
V
IN
Input Operating Voltage
2.7
--
6.0
V
Note 1
I
OUT
MAX
Maximum Output Current
50
100
150
--
--
--
--
--
--
mA
TC1014
TC1015
TC1185
V
OUT
Output Voltage
V
R
2.5%
V
R
0.5% V
R
+ 2.5%
V
Note 2
TCV
OUT
V
OUT
Temperature Coefficient
--
--
20
40
--
--
ppm/C
Note 3
V
OUT
/
V
IN
Line Regulation
--
0.05
0.35
%
(V
R
+ 1V)
V
IN
6V
V
OUT
/V
OUT
Load Regulation
--
--
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
I
L
= 0.1mA to I
OUT
MAX
I
L
= 0.1mA to I
OUT
MAX
(Note 4)
V
IN
-V
OUT
Dropout Voltage
--
--
--
--
--
2
65
85
180
270
--
--
120
250
400
mV
TC1015; TC1185
TC1185
I
L
= 100
A
I
L
= 20mA
I
L
= 50mA
I
L
= 100mA
I
L
= 150mA (Note 5)
I
IN
Supply Current (Note 8)
--
50
80
A
SHDN = V
IH
, I
L
= 0
I
INSD
Shutdown Supply Current
--
0.05
0.5
A
SHDN = 0V
PSRR
Power Supply Rejection
Ratio
--
64
--
dB
F
RE
1kHz
I
OUT
SC
Output Short Circuit Current
--
300
450
mA
V
OUT
= 0V
V
OUT
/
P
D
Thermal Regulation
--
0.04
--
V/W
Notes 6, 7
T
SD
Thermal Shutdown Die
Temperature
--
160
--
C
T
SD
Thermal Shutdown
Hysteresis
--
10
--
C
eN
Output Noise
--
600
--
nV/
Hz
I
L
= I
OUT
MAX
, F = 10kHz
470pF from Bypass
to GND
Note
1:
The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
8:
Apply for Junction Temperatures of -40C to +85C.
TC V
OUT
= (V
OUT
MAX
V
OUT
MIN
)x 10
6
V
OUT
x
T
TC1014/TC1015/TC1185
DS21335B-page 4
2002 Microchip Technology Inc.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: V
IN
= V
R
+ 1V, I
L
= 100
A, C
L
= 3.3
F, SHDN > V
IH
, T
A
= 25C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40C to +125C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
V
IH
SHDN Input High Threshold
45
--
--
%V
IN
V
IN
= 2.5V to 6.5V
V
IL
SHDN Input Low Threshold
--
--
15
%V
IN
V
IN
= 2.5V to 6.5V
Note
1:
The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T
A
, T
J
,
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
8:
Apply for Junction Temperatures of -40C to +85C.
TC V
OUT
= (V
OUT
MAX
V
OUT
MIN
)x 10
6
V
OUT
x
T
2002 Microchip Technology Inc.
DS21335B-page 5
TC1014/TC1015/TC1185
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23A)
Symbol
Description
1
V
IN
Unregulated supply input.
2
GND
Ground terminal.
3
SHDN
Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.
The regulator enters shutdown when a logic low is applied to this input. During shutdown,
output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5
A
(max).
4
Bypass
Reference bypass input. Connecting a 470pF to this input further reduces output noise.
5
V
OUT
Regulated voltage output.
TC1014/TC1015/TC1185
DS21335B-page 6
2002 Microchip Technology Inc.
3.0
DETAILED DESCRIPTION
The TC1014/TC1015/TC1185
are
precision fixed
output voltage regulators. (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet.) Unlike bipolar regulators, the TC1014/TC1015/
TC1185 supply current does not increase with load
current. In addition, V
OUT
remains stable and within
regulation over the entire 0mA to I
OUT
MAX
operating
load current ranges (an important consideration in RTC
and CMOS RAM battery back-up applications).
Figure 3-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above V
IH
, and shutdown (disabled)
when SHDN is at or below V
IL
. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05
A
(typical), V
OUT
falls to zero volts.
FIGURE 3-1:
TYPICAL APPLICATION
CIRCUIT
3.1
Bypass Input
A 470pF capacitor connected from the Bypass input to
ground
reduces
noise
present
on
the
internal
reference, which in turn significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
3.2
Output Capacitor
A 1
F (min) capacitor from V
OUT
to ground is required.
The output capacitor should have an effective series
resistance greater than 0.1
and less than 5
. A 1
F
capacitor should be connected from V
IN
to GND if there
is more than 10 inches of wire between the regulator
and the AC filter capacitor, or if a battery is used as the
power source. Aluminum electrolytic or tantalum
capacitor types can be used. (Since many aluminum
electrolytic capacitors freeze at approximately -30C,
solid tantalums are recommended for applications
operating below -25C.) When operating from sources
other
than
batteries,
supply-noise
rejection
and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
TC1014
TC1015
TC1185
V
OUT
SHDN
GND
Bypass
470pF
Reference
Bypass Cap
(Optional)
1
F
+
V
IN
V
OUT
Shutdown Control
(to CMOS Logic or Tie
to V
IN
if unused)
1
F
+
Battery
+
2002 Microchip Technology Inc.
DS21335B-page 7
TC1014/TC1015/TC1185
4.0
THERMAL CONSIDERATIONS
4.1
Thermal Shutdown
Integrated
thermal
protection
circuitry
shuts
the
regulator off when die temperature exceeds 160C.
The regulator remains off until the die temperature
drops to approximately 150C.
4.2
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
EQUATION 4-1:
The maximum allowable power dissipation (Equation
4-2) is a function of the maximum ambient temperature
(T
A
MAX
), the maximum allowable die temperature
(T
J
MAX
) and the thermal resistance from junction-to-air
(
JA
). The 5-Pin SOT-23A package has a
JA
of
approximately 220C/Watt.
EQUATION 4-2:
Equation 4-1 can be used in conjunction with Equation
4-2 to ensure regulator thermal operation is within
limits. For example:
Given:
V
IN
MAX
= 3.0V +10%
V
OUT
MIN
= 2.7V 2.5%
I
LOAD
MAX
= 40mA
T
J
MAX
= 125C
T
A
MAX
= 55C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
P
D
(V
IN
MAX
V
OUT
MIN
)I
LOAD
MAX
= [(3.0 x 1.1) (2.7 x .975)]40 x 10
3
= 26.7mW
Maximum allowable power dissipation:
In this example, the TC1014 dissipates a maximum of
26.7mW; below the allowable limit of 318mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits.
4.3
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower
JA
and therefore
increase the maximum allowable power dissipation
limit.
Where:
P
D
(V
IN
MAX
V
OUT
MIN
)I
LOAD
MAX
P
D
V
IN
MAX
V
OUT
MIN
I
LOAD
MAX
= Worst case actual power dissipation
= Minimum regulator output voltage
= Maximum output (load) current
= Maximum voltage on V
IN
P
D
MAX
= (T
J
MAX
T
A
MAX
)
JA
Where all terms are previously defined.
P
D
MAX
= (T
J
MAX
T
A
MAX
)
JA
= (125 55)
220
= 318mW
TC1014/TC1015/TC1185
DS21335B-page 8
2002 Microchip Technology Inc.
5.0
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Dropout Voltage vs. Temperature
0.000
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
-40
-20
0
20
50
70
125
TEMPERATURE (
C)
DROPOUT VOLTAGE (V)
C
IN
= 1
F
C
OUT
= 1
F
V
OUT
= 3.3V
I
LOAD
= 10mA
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
0.180
0.200
-40
-20
0
20
50
70
125
DROPOUT VOLTAGE (V)
TEMPERATURE (
C)
C
IN
= 1
F
C
OUT
= 1
F
Dropout Voltage vs. Temperature
V
OUT
= 3.3V
I
LOAD
= 100mA
0
10
20
30
40
50
60
70
80
90
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
F
C
OUT
= 1
F
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 10mA
Dropout Voltage vs. Temperature
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.090
0.100
-40
-20
0
20
50
70
125
DROPOUT VOLTAGE (V)
TEMPERATURE (
C)
C
IN
= 1
F
C
OUT
= 1
F
V
OUT
= 3.3V
I
LOAD
= 50mA
0.000
0.050
0.100
0.150
0.200
0.250
0.300
-40
-20
0
20
50
70
125
DROPOUT VOLTAGE (V)
TEMPERATURE (
C)
C
IN
= 1
F
C
OUT
= 1
F
Dropout Voltage vs. Temperature
V
OUT
= 3.3V
I
LOAD
= 150mA
0
10
20
30
40
50
60
70
80
90
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
F
C
OUT
= 1
F
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
2002 Microchip Technology Inc.
DS21335B-page 9
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
0
10
20
30
40
50
60
70
80
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
GND CURRENT (
A)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
F
C
OUT
= 1
F
Ground Current vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 150mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
C
IN
= 1
F
C
OUT
= 1
F
I
LOAD
= 100mA
V
OUT
(V)
V
OUT
vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 100mA
Output Voltage vs. Temperature
3.274
3.276
3.278
3.280
3.282
3.284
3.286
3.288
3.290
-40
-20
-10
0
20
40
85
125
V
OUT
(V)
TEMPERATURE (
C)
V
OUT
= 3.3V
I
LOAD
= 150mA
C
IN
= 1
F
C
OUT
= 1
F
V
IN
= 4.3V
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5 1
1.5 2 2.5 3
3.5 4
4.5 5
5.5 6
6.5 7
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
C
IN
= 1
F
C
OUT
= 1
F
V
OUT
(V)
V
OUT
vs. V
IN
V
OUT
= 3.3V
I
LOAD
= 0
3.275
3.280
3.285
3.290
3.295
3.300
3.305
3.310
3.315
3.320
-40
-20
-10
0
20
40
85
125
TEMPERATURE (
C)
Output Voltage vs. Temperature
V
OUT
(V)
V
OUT
= 3.3V
I
LOAD
= 10mA
C
IN
= 1
F
C
OUT
= 1
F
V
IN
= 4.3V
TC1014/TC1015/TC1185
DS21335B-page 10
2002 Microchip Technology Inc.
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
4.985
4.990
4.995
5.000
5.005
5.010
5.015
5.020
5.025
-40
-20
-10
0
20
40
85
125
Output Voltage vs. Temperature
V
OUT
(V)
TEMPERATURE (
C)
V
OUT
= 5V
I
LOAD
= 10mA
C
IN
= 1
F
C
OUT
= 1
F
V
IN
= 6V
Temperature vs. Quiescent Current
0
10
20
30
40
50
60
70
-40
-20
-10
0
20
40
85
125
GND CURRENT (
A)
TEMPERATURE (
C)
V
OUT
= 5V
I
LOAD
= 10mA
C
IN
= 1
F
C
OUT
= 1
F
V
IN
= 6V
4.974
4.976
4.978
4.980
4.982
4.984
4.986
4.988
4.990
4.992
4.994
-40
-20
-10
0
20
40
85
125
Output Voltage vs. Temperature
V
OUT
(V)
TEMPERATURE (
C)
V
OUT
= 5V
I
LOAD
= 150mA
C
IN
= 1
F
C
OUT
= 1
F
V
IN
= 6V
0
10
20
30
40
50
60
70
80
-40
-20
-10
0
20
40
85
125
Temperature vs. Quiescent Current
GND CURRENT (
A)
TEMPERATURE (
C)
V
OUT
= 5V
I
LOAD
= 150mA
C
IN
= 1
F
C
OUT
= 1
F
V
IN
= 6V
10.0
1.0
0.1
0.0
0.01K 0.1K
1K
10K
100K
1000K
FREQUENCY (Hz)
Output Noise vs. Frequency
NOISE (
V/
Hz)
R
LOAD
= 50
C
OUT
= 1
F
C
IN
= 1
F
C
BYP
= 0
1000
100
10
1
0.1
0.01
0
10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
Stability Region vs. Load Current
C
OUT
ESR
(
)
C
OUT
= 1
F
to 10
F
Stable Region
Stable Region
-30
-35
-40
-45
-50
-60
-55
-65
-70
-75
-80
0.01K 0.1K
1K
10K
100K 1000K
FREQUENCY (Hz)
Power Supply Rejection Ratio
PSRR (dB)
I
OUT
=
10mA
V
INDC
=
4V
V
INAC
=
100mVp-p
V
OUT
=
3V
C
IN
=
0
C
OUT
=
1
F
2002 Microchip Technology Inc.
DS21335B-page 11
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
V
SHDN
V
OUT
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25
C, Rise Time = 448S
V
SHDN
V
OUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 470pF, I
LOAD
= 50mA
V
IN
= 4.3V, Temp = 25
C, Fall Time = 100S
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25
C, Rise Time = 184S
V
SHDN
V
OUT
V
OUT
V
SHDN
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 4.3V, Temp = 25
C, Fall Time = 52S
TC1014/TC1015/TC1185
DS21335B-page 12
2002 Microchip Technology Inc.
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 470pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25
C, Rise Time = 390S
V
SHDN
V
OUT
V
SHDN
V
OUT
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 470pF, I
LOAD
= 50mA
V
IN
= 6V, Temp = 25
C, Fall Time = 167S
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25
C, Rise Time = 192S
V
SHDN
V
OUT
V
OUT
V
SHDN
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: C
IN
= 1
F, C
OUT
= 1
F, C
BYP
= 0pF, I
LOAD
= 100mA
V
IN
= 6V, Temp = 25
C, Fall Time = 88S
2002 Microchip Technology Inc.
DS21335B-page 13
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
V
OUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: C
IN
= 1
F, C
OUT
= 2.2
F, C
BYP
= 470pF,
V
IN
= V
OUT
+ 0.25V, Temp = 25
C
I
LOAD
= 50mA switched in at 10kHz, V
OUT
is AC coupled
V
OUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: C
IN
= 1
F, C
OUT
= 2.2
F, C
BYP
= 470pF,
V
IN
= V
OUT
+ 0.25V, Temp = 25
C
I
LOAD
= 150mA switched in at 10kHz, V
OUT
is AC coupled
V
OUT
I
LOAD
Load Regulation of 3.3V LDO
Conditions: C
IN
= 1
F, C
OUT
= 2.2
F, C
BYP
= 470pF,
V
IN
= V
OUT
+ 0.25V, Temp = 25
C
I
LOAD
= 100mA switched in at 10kHz, V
OUT
is AC coupled
V
IN
Line Regulation of 3.3V LDO
Conditions: V
IN
= 4V, + 1V Squarewave @2.5kHz
C
IN
= 0
F, C
OUT
= 1
F, C
BYP
= 470pF,
I
LOAD
= 100mA, V
IN
& V
OUT
are AC coupled
V
OUT
TC1014/TC1015/TC1185
DS21335B-page 14
2002 Microchip Technology Inc.
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
C
IN
= 0
F, C
OUT
= 1
F, C
BYP
= 470pF,
I
LOAD
= 100mA, V
IN
& V
OUT
are AC coupled
Line Regulation of 5.0V LDO
Conditions: V
IN
= 6V, + 1V Squarewave @2.5kHz
V
IN
V
OUT
V
OUT
Thermal Shutdown Response of 5.0V LDO
Conditions: V
IN
= 6V, C
IN
= 0
F, C
OUT
= 1
F
I
LOAD
was increased until temperature of die reached about 160
C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160
C. The regulator
remains off until die temperature drops to approximately 150
C.
2002 Microchip Technology Inc.
DS21335B-page 15
TC1014/TC1015/TC1185
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
"1" & "2" = part number code + temperature range and
voltage
"3" represents date code
"4" represents lot ID number
6.2
Taping Form
(V)
TC1014
Code
TC1015
Code
TC1185
Code
1.8
AY
BY
NY
2.5
A1
B1
N1
2.6
NB
BT
NT
2.7
A2
B2
N2
2.8
AZ
BZ
NZ
2.85
A8
B8
N8
3.0
A3
B3
N3
3.3
A5
B5
N5
3.6
A9
B9
N9
4.0
A0
B0
N0
5.0
A7
B7
N7
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
5-Pin SOT-23A
8 mm
4 mm
3000
7 in
Carrier Tape, Number of Components Per Reel and Reel Size
User Direction of Feed
Device
Marking
PIN 1
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
W
P
TC1014/TC1015/TC1185
DS21335B-page 16
2002 Microchip Technology Inc.
6.3
Package Dimensions
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.075 (1.90)
REF.
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.024 (0.60)
.004 (0.10)
10
MAX.
.010 (0.25)
.004 (0.09)
SOT-23A-5
Dimensions: inches (mm)
2002 Microchip Technology Inc.
DS21335B-page17
TC1014/TC1015/TC1185
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
Your local Microchip sales office
2.
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC1014/TC1015/TC1185
DS21335B-page18
2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc.
DS21335B-page 19
TC1014/TC1015/TC1185
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip's products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
K
EE
L
OQ
, microID,
MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Tech-
nology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company's quality system processes and
procedures are QS-9000 compliant for its
PICmicro
8-bit MCUs, K
EE
L
OQ
code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip's quality system for the
design and manufacture of development
systems is ISO 9001 certified.
DS21335B-page 20
2002 Microchip Technology Inc.
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
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Tel: 480-792-7966 Fax: 480-792-7456
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Tel: 770-640-0034 Fax: 770-640-0307
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Tel: 630-285-0071 Fax: 630-285-0075
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Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
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Tel: 949-263-1888 Fax: 949-263-1338
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Microchip Technology Inc.
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Unit 915
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Tel: 86-10-85282100 Fax: 86-10-85282104
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Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
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Tel: 86-28-86766200 Fax: 86-28-86766599
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Tel: 86-591-7503506 Fax: 86-591-7503521
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Co., Ltd.
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Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
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Co., Ltd., Shenzhen Liaison Office
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Tel: 86-755-2350361 Fax: 86-755-2366086
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Tel: 852-2401-1200 Fax: 852-2401-3431
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Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
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Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
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Tel: 45 4420 9895 Fax: 45 4420 9910
France
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Microchip Technology GmbH
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Italy
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Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
*DS21335B*
W
ORLDWIDE
S
ALES
AND
S
ERVICE
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