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Электронный компонент: TC1027CEQR

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2002 Microchip Technology Inc.
DS21284B-page 1
Features
Combines Four Comparators and a Voltage
Reference in a Single Package
Optimized for Single Supply Operation
Small Package: 16-Pin SOIC, 16-Pin QSOP or
16-Pin PDIP (Narrow)
Ultra Low Input Bias Current: Less than 100pA
Low Quiescent Current: 18
A (Typ.)
Operates Down to V
DD
= 1.8V Min
Applications
Power Management Circuits
Battery Operated Equipment
Consumer Products
Device Selection Table
Package Types
General Description
The TC1027 is a mixed-function device combining four
general purpose comparators and a voltage reference
in a single 16-pin package. This increased integration
allows the user to replace two packages, which saves
space, lowers supply current, and increases system
performance.
The TC1027 is optimized for low supply voltage and
very low supply current operation (18
A typ), making it
ideal for battery-operated applications. The compara-
tors have rail-to-rail inputs and outputs which allows
operation from low supply voltages with large input and
output signal swings.
Packaged in a 16-Pin QSOP, 16-Pin SOIC (0.150 wide)
or 16-Pin PDIP, the TC1027 is ideal for applications
requiring high integration, small size and low power.
Functional Block Diagram
Part Number
Package
Temperature
Range
TC1027CEPR
16-Pin PDIP
-40C to +85C
TC1027CEQR
16-Pin QSOP
-40C to +85C
TC1027CEOR
16-Pin SOIC
-40C to +85C
OUTC
TC1027CEPR
TC1027CEQR
TC1027CEOR
1
2
3
4
16
15
14
OUTB
OUTA
V
DD
OUTD
V
SS
INA-
IND+
IND-
INC+
INC-
INA+
INB-
INB+
REF+
GND
5
6
7
8
13
12
11
10
9
16-Pin PDIP
16-Pin QSOP
16-Pin SOIC
GND
OUTB
OUTA
V
DD
OUTD
TC1027
V
SS
INA-
IND+
IND-
INC+
INC-
INA+
INB-
INB+
REF+
OUTC
+
Voltage
Reference
A
B
C
D
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
+
+
+
TC1027
Linear Building Block Quad Low Power
Comparator and Voltage Reference
TC1027
DS21284B-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin .......... (V
SS
0.3V) to (V
DD
+ 0.3V)
Junction Temperature....................................... +150C
Operating Temperature Range............. -40C to +85C
Storage Temperature Range .............. -55C to +150C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1027 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Typical values apply at 25C and V
DD
= 3.0V. Minimum and maximum values apply for T
A
= -40 to
+85C, and V
DD
= 1.8V to 5.5V, unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V
DD
Supply Voltage
1.8
--
5.5
V
I
Q
Supply Current
--
18
26
A
All outputs unloaded
Comparator
V
ICMR
Common Mode Input Voltage Range
V
SS
0.2
--
V
DD
+ 0.2
V
V
OS
Input Offset Voltage
-5
-5
--
+5
+5
mV
mV
V
DD
= 3V, V
CM
= 1.5V, T
A
= 25C
T
A
= -40C to 85C
I
B
Input Bias Current
--
--
100
pA
T
A
= 25C, IN+,IN- = V
DD
to V
SS
V
OH
Output High Voltage
V
DD
0.3
--
--
V
R
L
= 10k
to V
SS
V
OL
Output Low Voltage
--
--
0.3
V
R
L
= 10k
to V
DD
CMRR
Common Mode Rejection Ratio
66
--
--
dB
T
A
= 25C, V
DD
= 5V
V
CM
= V
DD
to V
SS
PSRR
Power Supply Rejection Ratio
60
--
--
dB
T
A
= 25C, V
CM
= 1.2V
V
DD
= 1.8V to 5V
I
SRC
Output Source Current
1
--
--
mA
IN+ = V
DD
, IN- = V
SS
,
Output Shorted to V
SS
V
DD
= 1.8V
I
SINK
Output Sink Current
2
--
--
mA
IN+ = V
SS
, IN- = V
DD
,
Output Shorted to V
DD
V
DD
= 1.8V
t
PD1
Response Time
--
4
--
sec
100mV Overdrive, C
L
= 100pF
t
PD2
Response Time
--
6
--
sec
10mV Overdrive, C
L
= 100pF
Voltage Reference
V
REF
Reference Voltage
1.176
1.200
1.224
V
I
REF(SOURCE)
Source Current
50
--
--
A
I
REF(SINK)
Sink Current
50
--
--
A
C
L(REF)
Load Capacitance
--
--
100
PF
E
VREF
Noise Voltage
--
20
--
V
RMS
100Hz to 100kHz
e
VREF
Noise Voltage Density
--
1.0
--
V/
Hz
1kHz
2002 Microchip Technology Inc.
DS21284B-page 3
TC1027
2.0
PIN DESCRIPTION
The description of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(16-Pin PDIP)
(16-Pin QSOP)
(16-Pin SOIC)
Symbol
Description
1
OUTB
Comparator output.
2
OUTA
Comparator output.
3
V
DD
Positive power supply.
4
INA-
Inverting comparator input.
5
INA+
Non-Inverting comparator input.
6
INB-
Inverting comparator input.
7
INB+
Non-Inverting comparator input.
8
REF+
Voltage reference output voltage.
9
GND
Voltage reference ground; must be tied to V
SS
.
10
INC-
Inverting comparator input.
11
INC+
Non-Inverting comparator input.
12
IND-
Inverting comparator input.
13
IND+
Non-Inverting comparator input.
14
V
SS
Negative power supply.
15
OUTD
Comparator output.
16
OUTC
Comparator output.
TC1027
DS21284B-page 4
2002 Microchip Technology Inc.
3.0
DETAILED DESCRIPTION
The TC1027 is one of a series of very low-power, linear
building block products targeted at low-voltage, single-
supply applications. The TC1027 minimum operating
voltage is 1.8V, and typical supply current is only 18
A.
It combines four comparators and a voltage reference
in a single package.
3.1
Comparators
The TC1027 contains four comparators. The compara-
tor's input range extends beyond both supply voltages
by 200mV and the outputs will swing to within several
millivolts of the supplies depending on the load current
being driven.
The comparators exhibit propagation delay and supply
current which are largely independent of supply
voltage. The low input bias current and offset voltage
make them suitable for high impedance precision
applications.
3.2
Voltage Reference
A 2.0% tolerance, internally biased, 1.20V bandgap
voltage reference is included in the TC1027. It has a
push pull output capable of sourcing and sinking at
least 50
A.
GND (Pin 9) is connected to V
SS
(Pin 14) through the
substrate of the integrated circuit. Large currents can
flow between GND and V
SS
if the pins are not at the
same voltage.
4.0
TYPICAL APPLICATIONS
The TC1027 lends itself to a wide variety of
applications, particularly in battery-powered systems. It
Typically it finds application in power management,
processor supervisory and interface circuitry.
4.1
External Hysteresis (Comparator)
Hysteresis can be set externally with two resistors
using positive feedback techniques (see Figure 4-1).
The design procedure for setting external comparator
hysteresis is as follows:
1.
Choose the feedback resistor R
C
. Since the
input bias current of the comparator is at most
100pA, the current through R
C
can be set to
100nA (i.e., 1000 times the input bias current)
and retain excellent accuracy. The current
through R
C
at the comparator's trip point is V
R
/
R
C
where V
R
is a stable reference voltage.
2.
Determine the hysteresis voltage (V
HY
) between
the upper and lower thresholds.
3.
Calculate R
A
as follows:
EQUATION 4-1:
4.
Choose the rising threshold voltage for V
SRC
(V
THR
).
5.
Calculate R
B
as follows:
EQUATION 4-2:
6.
Verify
the
threshold
voltages
with
these
formulas:
V
SRC
rising:
EQUATION 4-3:
V
SRC
falling:
EQUATION 4-4:
R
A
R
C
V
H Y
V
D D
-----------
=
R
B
1
V
THR
V
R
R
A
---------------------
1
R
A
-------
1
R
C
-------
-----------------------------------------------------------
=
V
TH R
V
R
(
)
R
A
(
)
1
R
A
-------
1
R
B
-------
1
R
C
-------
+
+
=
V
THF
V
THR
R
A
V
DD
R
C
-------------------------
=
2002 Microchip Technology Inc.
DS21284B-page 5
TC1027
4.2
Precision Battery Monitor
Figure 4-2 is a precision battery low/battery dead
monitoring circuit. Typically, the battery low output
warns the user that a battery dead condition is
imminent. Battery dead typically initiates a forced
shutdown to prevent operation at low internal supply
voltages (which can cause unstable system operation).
The circuit of Figure 4-2 uses a single TC1027, one
additional op amp, and only six external resistors.
AMP 1 is a simple buffer while CMPTR1 and CMPTR2
provide precision voltage detection using V
R
as a
reference. Resistors R2 and R4 set the detection
threshold for BATT LOW while resistors R1 and R3 set
the detection threshold for BATT FAIL. The component
values shown assert BATT LOW at 2.2V (typical) and
BATT FAIL at 2.0V (typical). Total current consumed by
this circuit is typically 24
A at 3V. Resistors R5 and R6
provide hysteresis for comparators CMPTR1 and
CMPTR2, respectively.
4.3
32.768 kHz "Time of Day Clock"
Crystal Controlled Oscillator
A very stable oscillator driver can be designed by using
a crystal resonator as the feedback element. Figure 4-3
shows a typical application circuit using this technique
to develop clock driver for a Time Of Day (TOD) clock
chip. The value of R
A
and R
B
determine the DC voltage
level at which the comparator trips in this case one-
half of V
DD
. The RC time constant of R
C
and C
A
should
be set several times greater than the crystal oscillator's
period, which will ensure a 50% duty cycle by maintain-
ing a DC voltage at the inverting comparator input
equal to the absolute average age of the output signal.
4.4
Non-Retriggerable One Shot
Multivibrator
Using two comparators, a non-retriggerable one shot
multivibrator can be designed using the circuit configu-
ration of Figure 4-4. A key feature of this design is that
the pulse width is independent of the magnitude of the
supply voltage because the charging voltage and the
intercept voltage are a fixed percentage of V
DD
. In
addition, this one shot is capable of pulse width with as
much as a 99% duty cycle and exhibits input lockout to
ensure that the circuit will not retrigger before the
output pulse has completely timed out. The trigger level
is the voltage required at the input to raise the voltage
at node A higher than the voltage at node B, and is set
by the resistive divider R4 and R10 and the impedance
network composed of R1, R2 and R3. When the one
shot has been triggered, the output of CMPTR2 is high,
causing the reference voltage at the non-inverting input
of CMPTR1 to go to V
DD
. This prevents any additional
input pulses from disturbing the circuit until the output
pulse has timed out.
The value of the timing capacitor C1 must be small
enough to allow CMPTR1 to discharge C1 to a diode
voltage before the feedback signal from CMPTR2
(through R10) switches CMPTR1 to its high state and
allows C1 to start an exponential charge through R5.
Proper circuit action depends upon rapidly discharging
C1 through the voltage set by R6, R9 and D2 to a final
voltage of a small diode drop. Two propagation delays
after the voltage on C1 drops below the level on the
non-inverting input of CMPTR2, the output of CMPTR1
switches to the positive rail and begins to charge C1
through R5. The time delay which sets the output pulse
width results from C1 charging to the reference voltage
set by R6, R9 and D2, plus four comparator propaga-
tion delays. When the voltage across C1 charges
beyond the reference, the output pulse returns to
ground and the input is again ready to accept a trigger
signal.
4.5
Oscillators and Pulse Width
Modulators
Microchip's linear building block comparators adapt
well to oscillator applications for low frequencies (less
than 100kHz). Figure 4-5 shows a symmetrical square
wave generator using a minimum number of compo-
nents. The output is set by the RC time constant of R4
and C1, and the total hysteresis of the loop is set by R1,
R2 and R3. The maximum frequency of the oscillator is
limited only by the large signal propagation delay of the
comparator in addition to any capacitive loading at the
output which degrades the slew rate. To analyze this
circuit, assume that the output is initially high. For this
to occur, the voltage at the inverting input must be less
than the voltage at the non-inverting input. Therefore,
capacitor C1 is discharged. The voltage at the
non-inverting input (V
H
) is:
EQUATION 4-5:
where, if R1 = R2 = R3, then:
EQUATION 4-6:
V
H
R2 V
DD
(
)
R2
R1 R3
||
(
)
+
[
]
---------------------------------------------
=
V
H
2 V
DD
(
)
3
-------------------
=
TC1027
DS21284B-page 6
2002 Microchip Technology Inc.
Capacitor C1 will charge up through R4. When the
voltage at the comparator's inverting input is equal to
V
H
, the comparator output will switch. With the output
at ground potential, the value at the non-inverting input
terminal (V
L
) is reduced by the hysteresis network to a
value given by:
EQUATION 4-7:
Using the same resistors as before, capacitor C1 must
now discharge through R4 toward ground. The output
will return to a high state when the voltage across the
capacitor has discharged to a value equal to V
L
. The
period of oscillation will be twice the time it takes for the
RC circuit to charge up to one half its final value. The
period can be calculated from:
EQUATION 4-8:
The frequency stability of this circuit should only be a
function of the external component tolerances.
Figure 4-6 shows the circuit for a pulse width modulator
circuit. It is essentially the same as in Figure 4-4, but
with the addition of an input control voltage. When the
input control voltage is equal to one-half V
DD
, operation
is basically the same as described for the free-running
oscillator. If the input control voltage is moved above or
below one-half V
DD
, the duty cycle of the output square
wave will be altered. This is because the addition of the
control voltage at the input has now altered the trip
points. The equations for these trip points are shown in
Figure 4-6 (see V
H
and V
L
).
Pulse width sensitivity to the input voltage variations
can be increased by reducing the value of R6 from
10k
and conversely, sensitivity will be reduced by
increasing the value of R6. The values of R1 and C1
can be varied to produce the desired center frequency.
FIGURE 4-1:
COMPARATOR
EXTERNAL HYSTERESIS
CONFIGURATION
FIGURE 4-2:
PRECISION BATTERY MONITOR
V
L
V
DD
3
-----------
=
1
FREQ
-----------------
2 0.694
(
)
R4
(
)
C1
(
)
=
+
V
R
V
DD
V
OUT
V
SRC
R
A
R
B
R
C
1/4
TC1027
V
DD
V
DD
V
DD
R2, 330k, 1%
TC1034
1/4
R4, 470k, 1%
R5, 7.5M
1/4
R6, 7.5M
R3, 470k, 1%
R1, 270k, 1%
VR
To System DC/DC
Converter
3V
Alkaline
TC1027
BATTFAIL
BATTLOW
CMPTR1
+
CMPTR2
+
AMP1
+
+
2002 Microchip Technology Inc.
DS21284B-page 7
TC1027
FIGURE 4-3:
32.768 kHz "TIME OF
DAY" CLOCK
OSCILLATOR
FIGURE 4-4:
NON-RETRIGGERABLE MULTIVIBRATOR
FIGURE 4-5:
SQUARE WAVE GENERATOR
+
V
DD
V
OUT
V
DD
RB
150k
RA
150k
R
C
1M
CA
100pF
32.768kHz
V
per
= 30.52
sec
1/4
TC1027
+
+
V
DD
CMPTR1
CMPTR2
IN
IN
OUT
OUT
R3
1M
R4
1M
R6
562k
R7
1M
R2
100k
R1
100k
R8
D2
D1
10M
R9
243k
R5
10M
C1
100pF
R10
61.9k
A
B
C
GND
t
0
C
GND
V
DD
GND
V
DD
TC1025
TC1027
+
R1
100k
V
DD
R4
V
DD
R3
100k
R2
100k
C1
V
H
=
R2 (V
DD
)
R2 + (R1||R3)
V
L
=
(V
DD
) (R2||R3)
R1 + (R2||R3)
FREQ =
1
2(0.694)(R4)(C1)
1/4
TC1027
TC1027
DS21284B-page 8
2002 Microchip Technology Inc.
FIGURE 4-6:
PULSE WIDTH MONITOR
+
R6
10k
R4
V
C
V
DD
V
DD
R1
100k
R3
100k
R2
100k
C1
FREQ =
1
2
2 (0.694) (R4) (C1)
For Square Wave Generation
Select R1 = R2 = R3
TC1027
V
H
=
V
C
=
V
DD
V
DD
(R1R2R6 + R2R3R6) + V
C
(R1R2R3)
R1R2R6 + R1R3R6 + R2R3R6 + R1R2R3
V
DD
(R2R3R6) + V
C
(R1R2R3)
R1R2R6 + R1R3R6 + R2R3R6 + R1R2R3
V
L
=
1/4
2002 Microchip Technology Inc.
DS21284B-page 9
TC1027
5.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
7
6
5
4
3
2
1.5
2
2.5
3
3.5
4
4.5
5
5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Comparator Propagation Delay
vs. Supply Voltage
DELAY TO RISING EDGE (
sec)
Overdrive = 10mV
Overdrive = 50mV
7
6
5
4
3
2
1.5
2
2.5
3
3.5
4
4.5
5
5.5
DELAY TO FALLING EDGE (
sec)
7
6
5
4
3
-40
C
85
C
25
C
TEMPERATURE (
C)
DELAY TO RISING EDGE (
sec)
Overdrive = 100mV
Overdrive = 10mV
Overdrive = 50mV
Comparator Propagation Delay
vs. Supply Voltage
Comparator Propagation Delay
vs. Temperature
T
A
= 25C
C
L
= 100pF
T
A
= 25C
C
L
= 100pF
Overdrive = 100mV
V
DD
= 4V
V
DD
= 5V
V
DD
= 2V
V
DD
= 3V
-40
C
85
C
25
C
2.5
2.0
1.5
1.0
.5
0
0
1
2
3
4
5
6
V
DD
- V
OUT
(V)
I
SOURCE
(mA)
7
6
5
4
3
Comparator Output Swing
vs. Output Source Current
DELAY TO FALLING EDGE (
sec)
Overdrive = 100mV
2.5
2.0
1.5
1.0
.5
0
0
1
2
3
4
5
Comparator Propagation Delay
vs. Temperature
Comparator Output Swing
vs. Output Sink Current
TEMPERATURE (
C)
I
SINK
(mA)
V
DD
= 4V
V
DD
= 5V
V
DD
= 2V
V
DD
= 3V
T
A
= 25C
T
A
= 25C
V
DD
= 3V
V
DD
= 1.8V
V
DD
= 5.5V
V
DD
= 3V
V
DD
= 1.8V
V
DD
= 5.5V
V
OUT
- V
SS
(V)
6
60
50
Sinking
40
30
20
10
0
0
1
2
3
4
5
6
OUTPUT SHORT-CIRCUIT CURRENT (mA)
SUPPLY VOLTAGE (V)
Comparator Output Short-Circuit
Current vs. Supply Voltage
Sourcing
T
A
= -40
C
T
A
= -40
C
T
A
= 25
C
T
A
= 85
C
T
A
= 25
C
T
A
= 85
C
REFERENCE VOLTAGE (V)
1.240
1.220
1.200
1.180
1.160
1.140
0
2
4
6
8
10
LOAD CURRENT (mA)
Reference Voltage vs.
Load Current
V
DD
= 1.8V
V
DD
= 3V
V
DD
= 5.5V
Sinking
Sourcing
V
DD
= 1.8V
V
DD
= 3V
V
DD
= 5.5V
4
3
2
1
0
0
100
200
300
400
SUPPLY AND REFERENCE VOLTAGES (V)
TIME (
sec)
Line Transient
Response of V
REF
V
DD
V
REF
TC1027
DS21284B-page 10
2002 Microchip Technology Inc.
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
1.25
1.20
1.15
1.10
1.05
1
2
3
4
5
REFERENCE VOLTAGE (V)
0
1
2
3
4
5
6
SUPPLY CURRENT
(
A)
SUPPLY VOLTAGE (V)
Supply Current vs. Supply Voltage
T
A
= 85
C
20
18
16
14
12
10
8
T
A
= -40
C
T
A
= 25
C
Reference Voltage
vs. Supply Voltage
SUPPLY VOLTAGE (V)
2002 Microchip Technology Inc.
DS21284B-page 11
TC1027
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Package marking data not available at this time.
6.2
Taping Form
Component Taping Orientation for 16-Pin SOIC (Narrow) Devices
PIN 1
User Direction of Feed
Standard Reel Component Orientation
for TR Suffix Device
W
P
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
16-Pin SOIC (N)
16 mm
8 mm
2500
13 in
Carrier Tape, Reel Size, and Number of Components Per Reel
Component Taping Orientation for 16-Pin QSOP (Narrow) Devices
PIN 1
User Direction of Feed
Standard Reel Component Orientation
for TR Suffix Device
W
P
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
16-Pin QSOP (N)
12 mm
8 mm
2500
13 in
Carrier Tape, Reel Size, Number of Components Per Reel and Reel Size
TC1027
DS21284B-page 12
2002 Microchip Technology Inc.
6.3
Package Dimensions
.110 (2.79)
.090 (2.29)
.022 (0.56)
.015 (0.38)
.150 (3.81)
.115 (2.92)
.770 (19.56)
.740 (18.80)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.045 (1.14)
.310 (7.87)
.290 (7.37)
.040 (1.02)
.020 (0.51)
.270 (6.86)
.240 (6.10)
.200 (5.08)
.140 (3.56)
.014 (0.36)
.008 (0.20)
.400 (10.16)
.310 (7.87)
16-Pin PDIP (Narrow)
PIN 1
10
MAX.
Dimensions: inches (mm)
8
MAX.
PIN 1
.157 (3.99)
.150 (3.81)
.196 (4.98)
.189 (4.80)
.012 (0.31)
.008 (0.21)
.010 (0.25)
.004 (0.10)
.069 (1.75)
.053 (1.35)
.010 (0.25)
.007 (0.19)
.050 (1.27)
.016 (0.41)
.244 (6.20)
.228 (5.80)
.025
(0.635)
TYP.
16-Pin QSOP (Narrow)
Dimensions: inches (mm)
2002 Microchip Technology Inc.
DS21284B-page 13
TC1027
6.3
Package Dimensions (Continued)
.018 (0.46)
.014 (0.36)
.050 (1.27)
.016 (0.40)
.050 (1.27) TYP
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
.010 (0.25)
.004 (0.10)
.069 (1.75)
.053 (1.35)
8
MAX.
PIN 1
.010 (0.25)
.007 (0.18)
.394 (10.00)
.385 (9.78)
16-Pin SOIC (Narrow)
Dimensions: inches (mm)
TC1027
DS21284B-page 14
2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc.
DS21284B-page15
TC1027
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
Your local Microchip sales office
2.
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3.
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC1027
DS21284B-page16
2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc.
DS21284B-page 17
TC1027
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip's products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
K
EE
L
OQ
, microID,
MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Tech-
nology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode
and Total Endurance are trademarks of Microchip Technology
Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company's quality system processes and
procedures are QS-9000 compliant for its
PICmicro
8-bit MCUs, K
EE
L
OQ
code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip's quality system for the
design and manufacture of development
systems is ISO 9001 certified.
DS21284B-page 18
2002 Microchip Technology Inc.
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Rocky Mountain
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Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Atlanta
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Tel: 630-285-0071 Fax: 630-285-0075
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Detroit
Tri-Atria Office Building
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Los Angeles
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Tel: 949-263-1888 Fax: 949-263-1338
New York
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Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
China - Beijing
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-6766200 Fax: 86-28-6766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
Hong Kong
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O'Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d'Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/01/02
*DS21284B*
W
ORLDWIDE
S
ALES
AND
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ERVICE