2002 Microchip Technology Inc.
DS21385C-page 1
M
Features
LDO with Integrated Microcontroller Reset
Monitor Functionality
Low Input Supply Current (80 A, typical)
Very Low Dropout Voltage
10 sec (typ.) Wake-Up Time from SHDN
300 mA Output Current
Standard or Custom Output and Detected
Voltages
Power-Saving Shutdown Mode
Bypass Input for Quiet Operation
Separate Input for Detected Voltage
140 msec Minimum RESET Output Duration
Space-Saving MSOP Package
Specified Junction Temperature Range:
-40C to +125C
Applications
Battery-Operated Systems
Portable Computers
Medical Instruments
Pagers
Cellular / GSM / PHS Phones
Related Literature
AN765, "Using Microchip's Micropower LDOs",
DS00765.
AN766, "Pin-Compatible CMOS Upgrades to
Bipolar LDOs", DS00766.
AN792, "A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application",
DS00792.
Package Type
General Description
The TC1300 combines a low dropout regulator and a
microcontroller reset monitor in an 8-Pin MSOP pack-
age. Total supply current is 80 A (typical), 20 to 60
times lower than bipolar regulators.
The TC1300 has a precise output with a typical accu-
racy of 0.5%. Other key features include low noise
operation, low dropout voltage and internal feed-
forward compensation for fast response to step
changes in load. The TC1300 has both over-tempera-
ture and over-current protection. When the shutdown
control (SHDN) is low, the regulator output voltage falls
to zero, RESET output remains valid and supply cur-
rent is reduced to 30 A (typical). The TC1300 is rated
for 300 mA of output current and stable with a 1 F out-
put capacitor.
An active-low RESET is asserted when the detected
voltage (V
DET
) falls below the reset voltage threshold.
The RESET output remains low for 300 msec (typical)
after V
DET
rises above reset threshold. The TC1300
also has a fast wake-up response time (10 sec.,
typical) when released from shutdown.
Typical Application Circuit
1
2
3
4
V
IN
V
DET
5
6
7
8
NC
V
OUT
GND
Bypass
SHDN
RESET
TC1300VUA
MSOP
TC1300
1
2
3
4
5
6
7
8
V
OUT
C
BYPASS
470 pF
(Optional)
Shutdown Control
(from Power
Control Logic)
GND
Bypass
V
IN
SHDN
V
OUT
C
1
1 F
RESET
RESET
V
DET
NC
C
2
1 F
Battery
V
DET
+
TC1300
300 mA CMOS LDO with Shutdown, Bypass and
Independent Delayed Reset Function
TC1300
DS21385C-page 2
2002 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage ....................................................................6.5V
Output Voltage ................................. (V
SS
- 0.3) to (V
IN
+ 0.3)
Power Dissipation ......................... Internally Limited (Note 6)
Operating Junction Temperature, T
J
....... 40C < T
J
< 150C
Maximum Junction Temperature, Tj .............................. 150C
Storage Temperature .................................. 65C to +150C
Maximum Voltage on Any Pin ............. (V
SS
-0.3) to (V
IN
+0.3)
*Notice: Stresses above those listed under "maximum rat-
ings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
PIN DESCRIPTIONS
Pin
Description
RESET
RESET output remains low while V
DET
is
below the reset voltage threshold and for
300 msec after V
DET
rises above reset thesh-
old.
V
OUT
Regulated Voltage Output
GND
Ground Terminal
Bypass
Reference Bypass Input. Connecting an
optional 470 pF to this input further reduces
output noise.
SHDN
Shutdown Control Input. The regulator is fully
enabled when a logic high is applied to this
input. The regulator enters shutdown when a
logic low is applied to this input. During shut-
down, regulator output voltage falls to zero,
RESET output remains valid and supply cur-
rent is reduced to 30 A (typ.).
NC
No connect
V
IN
Power Supply Input
V
DET
Detected Input Voltage. V
DET
and V
IN
can be
connected together.
ELECTRICAL CHARACTERISTICS
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 F, SHDN > V
IH
, T
A
= 25C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Operating Voltage
V
IN
2.7
--
6.0
V
Note 7
Maximum Output Current
I
OUTMAX
300
--
--
mA
Output Voltage
V
OUT
--
V
R
- 2.5%
V
R
0.5%
--
--
V
R
+ 2.5%
V
Note 1
V
OUT
Temperature Coefficient
V
OUT
/
T
--
25
--
ppm/C Note 2
Line Regulation
V
OUT
/
V
IN
--
0.02
0.35
%
(V
R
+ 1V) < V
IN
< 6V
Load Regulation
V
OUT
/V
OUT
--
0.5
2.0
%
I
L
= 0.1 mA to I
OUT
MAX,
Note 3
Note 1: V
R
is the regulator output voltage setting.
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, "Thermal Considerations", of this data
sheet for more details.
7: The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
(V
R
+ V
DROPOUT
).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
TCVOUT
VOUTMAX VOUTMIN
(
) 10
6
VOUT
T
--------------------------------------------------------------------------------------
=
2002 Microchip Technology Inc.
DS21385C-page 3
TC1300
Dropout Voltage (Note 4)
V
IN
V
OUT
--
1
70
210
30
130
390
mV
I
L
= 0.1 mA
I
L
= 100 mA
I
L
= 300 mA
Supply Current
I
SS1
--
80
160
A
SHDN = V
IH
Shutdown Supply Current
I
SS2
--
30
60
A
SHDN = 0V
Power Supply Rejection Ratio
PSRR
--
60
--
dB
f
1 kHz, C
BYPASS
= 1 nF
Output Short Circuit Current
I
OUTSC
--
800
1200
mA
V
OUT
= 0V
Thermal Regulation
V
OUT
/
P
D
-- 0.04
--
%/W
Note 5
Output Noise
eN
--
900
--
nV/Hz
f < 1 kHz, C
OUT
= 1 F,
R
LOAD
= 50
,
C
BYPASS
= 1 nF
Wake-Up Time
(from Shutdown Mode)
t
WK
--
10
20
sec
C
IN
= 1 F, V
IN
= 5V,
C
OUT
= 4.7 F, I
L
= 30 mA,
See Figure 3-2
Settling Time
(from Shutdown Mode)
ts
--
50
--
sec
C
IN
= 1 F, V
IN
= 5V
C
OUT
= 4.7 F
I
L
= 30 mA, See Figure 3-2
Thermal Shutdown Die
Temperature
T
SD
--
150
--
C
Thermal Shutdown Hysteresis
T
HYS
--
10
--
C
Thermal Resistance Junction to
Case
RthetaJA
--
200
--
C/Watt EIA/JEDEC JESD51-751-7 4-
Layer Board
SHDN Input High Threshold
V
IH
45
--
--
%V
IN
V
IN
= 2.5V to 6.0V
SHDN Input Low Threshold
V
IL
--
--
15
%V
IN
V
IN
= 2.5V to 6.0V
ELECTRICAL CHARACTERISTICS (CONTINUED)
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 F, SHDN > V
IH
, T
A
= 25C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1: V
R
is the regulator output voltage setting.
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, "Thermal Considerations", of this data
sheet for more details.
7: The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
(V
R
+ V
DROPOUT
).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
TCVOUT
VOUTMAX VOUTMIN
(
) 10
6
VOUT
T
--------------------------------------------------------------------------------------
=
TC1300
DS21385C-page 4
2002 Microchip Technology Inc.
RESET Output
Voltage Range
V
DET
1.0
1.2
--
--
6.0
6.0
V
T
A
= 0C to +70C
T
A
= 40C to +125C
Reset Threshold
V
TH
2.59
2.63
2.66
V
TC1300R-XX, T
A
= +25C
2.55
--
2.70
TC1300R-XX,
T
A
= 40C to +125C
2.36
2.40
2.43
TC1300Y-XX, T
A
= +25C
2.32
--
2.47
TC1300Y-XX,
T
A
= 40C to +125C
Reset Threshold Tempco
V
TH
/
T
--
30
--
ppm/C
V
DET
to Reset Delay
t
RPD
--
160
--
sec
V
DET
= V
TH
to (V
TH
100 mV)
Reset Active Timeout Period
t
RPU
140
300
560
msec
RESET Output Voltage Low
V
OL
--
--
0.3
V
V
DET
= V
TH
min,
I
SINK
= 1.2 mA
RESET Output Voltage High
V
OH
0.8 V
DET
--
--
V
V
DET
> V
TH
max,
I
SOURCE
= 500 A
ELECTRICAL CHARACTERISTICS (CONTINUED)
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 F, SHDN > V
IH
, T
A
= 25C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40C to +125C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1: V
R
is the regulator output voltage setting.
2:
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, "Thermal Considerations", of this data
sheet for more details.
7: The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
(V
R
+ V
DROPOUT
).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
TCVOUT
VOUTMAX VOUTMIN
(
) 10
6
VOUT
T
--------------------------------------------------------------------------------------
=
2002 Microchip Technology Inc.
DS21385C-page 5
TC1300
2.0
TYPICAL CHARACTERISTICS
Junction temperature (T
J
) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
FIGURE 2-1:
Line Regulation vs.
Temperature.
FIGURE 2-2:
Supply Current vs.
Temperature.
FIGURE 2-3:
Normalized V
OUT
vs.
Temperature.
FIGURE 2-4:
Reset Active Time-out
Period vs. Temperature.
FIGURE 2-5:
Output Noise vs. Frequency.
FIGURE 2-6:
Dropout Voltage vs. Load
Current (2.5V).
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (C)
Line Regulation (%)
V
OUT
= 3.0V
V
IN
= 3.5V to 6.0V
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
-40 -25 -10 5
20 35 50 65 80 95 110 125
Junction Temperature (C)
Supply Current (mA)
V
OUT
= 2.5V
V
OUT
= 5.0V
V
OUT
= 3.0V
V
IN
= V
OUT
+ 1V
2.491
2.492
2.493
2.494
2.495
2.496
2.497
2.498
2.499
2.500
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (C)
Output Voltage (V)
V
IN
= V
OUT
+ 1V
I
OUT
= 100 A
V
OUT
= 2.5V
0
50
100
150
200
250
300
350
400
450
-40 -25 -10
5
20
35
50 65
80
95 110 125
Junction Temperature (C)
Reset Active Time-out Perio
d
(ms)
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
100.00
1000.00
Frequency (kHz)
Output Noise (V/lHz)
R
LOAD
= 50 Ohms
C
OUT
= 1 F
1
1000
100
10
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0
100
200
300
400
Load Current (mA)
Dropout Voltage (V)
T
J
= +125C
T
J
= -40C
T
J
= +25C
V
OUT
= 2.5V
PDF 
ZIP