Document Outline
- Features/Options
- General Description
- Pin Assignment
- 48-PIN TSOP TYPE I
- 44-PIN SOP
- 40-PIN TSOP TYPE I
- Functional Block Diagram
- Pin Descriptions
- Truth Table (MT28F400B3)
- Truth Table (MT28F004B3)
- Functional Description
- Overview
- Smart 3 Technology (B3)
- Seven Independently Erasable Memory Blocks
- Hardware-Protected Boot Block
- Selectable Bus Size (MT28F400B3 Only)
- Internal State Machine (ISM)
- ISM Status Register
- Command Execution Logic(CEL)
- Deep Power-Down Mode
- Memory Architecture
- Boot Block
- Figure 1, Memory Address Maps
- Parameter Blocks
- Main Memory Blocks
- Output (READ) Operations
- Memory Array
- Status Register
- Identification Register
- Input Operations
- Command Set
- Table 1, Command Set
- ISM Status Register
- Table 2, Status Register Bit Definitions
- Command Execution
- READ ARRAY
- IDENTIFY DEVICE
- WRITE Sequence
- Table 3, Command Sequences
- ERASE Sequence
- ERASE Suspension
- Error Handling
- Table 4, Status Register Error Code Description
- WRITE/ERASE Cycle Endurance
- Power Usage
- Power-Up
- Figure 2, Power-Up/Reset Timing Diagram
- Self-timed WRITE Sequence (Word or Byte WRITE)
- Complete WRITE Status-Check Sequence
- Self-timed BLOCK ERASE Sequence (Word or Byte WRITE)
- Complete BLOCK ERASE Status-Check Sequence
- ERASE SUSPEND/RESUME Sequence
- Absolute Maximum Ratings
- Electrical Characteristics and Recommended DC READ Operating Conditions
- DC Operating Charactersitics
- Capacitance
- Read and Standby Current Drain
- READ Timing Parameters, Electrical Characteristics and Recommended AC Operating Conditions
- AC Test Conditions
- READ Timing Diagrams
- Word-Wide READ Cycle
- Byte-Wide READ Cycle
- Recommended DC WRITE/ERASE Conditions
- WRITE/ERASE Current Drain
- Speed-Dependent WRITE/ERASE AC Timing Characteristics and Recommended AC Operating Conditions: WE# (CE#)-Controlled WRITEs
- Word/Byte WRITE and ERASE Duration Characteristics
- WRITE/ERASE Timing Diagrams
- WRITE/ERASE Cycle, WE#-Controlled WRITE/ERASE
- WRITE/ERASE Cycle, CE#-Controlled WRITE/ERASE
- Package Drawings
- 44-Pin Plastic SOP (600 mil)
- 48-Pin Plastic TSOP I (12mm x 20mm)
- 40-Pin Plastic TSOP I (10mm x 20mm)
1
4Mb Smart 3 Boot Block Flash Memory
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash), pro-
grammable memory devices containing 4,194,304 bits
organized as 262,144 words (16 bits) or 524,288 bytes (8
bits). Writing or erasing the device is done with either a
3.3V or 5V V
PP
voltage, while all operations are performed
with a 3.3V V
CC
. Due to process technology advances,
5V V
PP
is optimal for application and production pro-
gramming. These devices are fabricated with Micron's
advanced 0.18m CMOS floating-gate process.
The MT28F004B3 and MT28F400B3 are organized
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure or
overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal write
or erase sequences. This block may be used to store
code implemented in low-level system recovery. The
remaining blocks vary in density and are written and
erased with no additional security measures.
Refer to Micron's Web site (
www.micron.com/flash
)
for the latest data sheet.
FLASH MEMORY
MT28F004B3
MT28F400B3
3V Only, Dual Supply (Smart 3)
FEATURES
Seven erase blocks:
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
Smart 3 technology (B3):
3.3V 0.3V V
CC
3.3V 0.3V V
PP
application programming
5V 10% V
PP
application/production programming
1
Compatible with 0.3m Smart 3 device
Advanced 0.18m CMOS floating-gate process
Address access time: 80ns
100,000 ERASE cycles
Industry-standard pinouts
Inputs and outputs are fully TTL-compatible
Automated write and erase algorithm
Two-cycle WRITE/ERASE sequence
Byte- or word-wide READ and WRITE
(MT28F400B3, 256K x 16/512K x 8)
Byte-wide READ and WRITE only
(MT28F004B3, 512K x 8)
TSOP and SOP packaging options
OPTIONS
MARKING
Timing
80ns access
-8
Configurations
512K x 8
MT28F004B3
256K x 16/512K x 8
MT28F400B3
Boot Block Starting Word Address
Top (3FFFFh)
T
Bottom (00000h)
B
Operating Temperature Range
Commercial (0C to +70C)
None
Extended (-40C to +85C)
ET
Packages
44-pin SOP (MT28F400B3)
SG
48-pin TSOP Type I (MT28F400B3)
WG
40-pin TSOP Type I (MT28F004B3)
VG
NOTE:
1. This generation of devices does not support 12V V
PP
compatibility production programming; however, 5V V
PP
application production programming can be used with no
loss of performance.
Part Number Example:
MT28F400B3SG-8 T
40-Pin TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
2
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN ASSIGNMENT (Top View)
40-PIN TSOP TYPE I
48-PIN TSOP TYPE I
44-PIN SOP
ORDER NUMBER AND PART MARKING
MT28F400B3SG-8 B
MT28F400B3SG-8 T
MT28F400B3SG-8 BET
MT28F400B3SG-8 TET
ORDER NUMBER AND PART MARKING
MT28F400B3WG-8 B
MT28F400B3WG-8 T
MT28F400B3WG-8 BET
MT28F400B3WG-8 TET
ORDER NUMBER AND PART MARKING
MT28F004B3VG-8 B
MT28F004B3VG-8 T
MT28F004B3VG-8 BET
MT28F004B3VG-8 TET
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE#
V
SS
DQ15/(A-1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
V
PP
WP#
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
RP#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V
SS
DQ15/(A-1)
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
A17
V
SS
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
3
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
16KB Boot Block
8KB Parameter Block
8KB Parameter Block
96KB Main Block
128KB Main Block
128KB Main Block
Y - Select Gates
Sense Amplifiers
Write/Erase-Bit
Compare and Verify
Addr.
Buffer/
Latch
Power
(Current)
Control
Addr.
Counter
Command
Execution
Logic
I/O
Control
Logic
V
PP
Switch/
Pump
Status
Register
Identification
Register
Y -
Decoder
128KB Main Block
X - Decoder/Block Erase Control
Output
Buffer
Input
Buffer
State
Machine
BYTE#
1
A0A17/(A18)
CE#
OE#
WE#
RP#
V
PP
DQ15/(A - 1)
1
MUX
DQ15
8
8
7
DQ8DQ14
1
DQ0DQ7
16
8
18 (19)
7
A-1
9
(10)
9
8
Output
Buffer
Output
Buffer
Input
Buffer
Input
Buffer
Input Data
Latch/Mux
7
A9
V
CC
WP#
NOTE: 1. Does not apply to MT28F004B3.
4
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
PIN DESCRIPTIONS
44-PIN SOP 40-PIN TSOP 48-PIN TSOP
NUMBERS
NUMBERS
NUMBERS
SYMBOL
TYPE
DESCRIPTION
43
9
11
WE#
Input
Write Enable: Determines if a given cycle is a WRITE
cycle. If WE# is LOW, the cycle is either a WRITE to the
command execution logic (CEL) or to the memory array.
2
12
14
WP#
Input
Write Protect: Unlocks the boot block when HIGH if V
PP
= V
PPH
1
(3.3V) or V
PPH
2
(5V) and RP# = V
IH
during a
WRITE or ERASE. Does not affect WRITE or ERASE
operation on other blocks.
12
22
26
CE#
Input
Chip Enable: Activates the device when LOW. When
CE# is HIGH, the device is disabled and goes into
standby power mode.
44
10
12
RP#
Input
Reset/Power-Down: When LOW, RP# clears the status
register, sets the internal state machine (ISM) to the
array read mode and places the device in deep power-
down mode. All inputs, including CE#, are "Don't
Care," and all outputs are High-Z. RP# unlocks the boot
block and overrides the condition of WP# when at V
HH
(12V), and must be held at V
IH
during all other modes
of operation.
14
24
28
OE#
Input
Output Enable: Enables data output buffers when
LOW. When OE# is HIGH, the output buffers are
disabled.
33
47
BYTE#
Input
Byte Enable: If BYTE# = HIGH, the upper byte is active
through DQ8DQ15. If BYTE# = LOW, DQ8DQ14 are
High-Z, and all data is accessed through DQ0DQ7.
DQ15/(A-1) becomes the least significant address input.
11, 10, 9, 8, 21, 20, 19,
25, 24, 23,
A0A17/
Input
Address Inputs: Select a unique, 16-bit word or 8-bit
7, 6, 5, 4,
18, 17, 16,
22, 21, 20,
(A18)
byte. The DQ15/(A-1) input becomes the lowest order
42, 41, 40, 15, 14, 8, 7, 19, 18, 8, 7,
address when BYTE# = LOW (MT28F400B3) to allow for
39, 38, 37, 36, 6, 5, 4, 3, 6, 5, 4, 3, 2,
a selection of an 8-bit byte from the 524,288 available.
36, 35, 34, 3 2, 1, 40, 13
1, 48, 17
31
45
DQ15/
Input/ Data I/O: MSB of data when BYTE# = HIGH. Address
(A-1)
Output Input: LSB of address input when BYTE# = LOW during
READ or WRITE operation.
15, 17, 19, 25-28, 32-35 29, 31, 33, DQ0DQ7
Input/ Data I/Os: Data output pins during any READ operation
21, 24, 26,
35, 38, 40,
Output or data input pins during a WRITE. These pins are used
28, 30
42, 44
to inputcommands to the CEL.
16, 18, 20,
30, 32, 34, DQ8DQ14
Input/ Data I/Os: Data output pins during any READ operation
22, 25, 27,
36, 39, 41,
Output or data input pins during a WRITE when BYTE# = HIGH.
29
43
These pins are High-Z when BYTE# is LOW.
1
11
13
V
PP
Supply Write/Erase Supply Voltage: From a WRITE or ERASE
CONFIRM until completion of the WRITE or ERASE, V
PP
must be at V
PPH
1
(3.3V) or V
PPH
2
(5V). V
PP
= "Don't Care"
during all other operations.
23
30, 31
37
V
CC
Supply Power Supply: +3.3V 0.3V.
13, 32
23, 39
27, 46
V
SS
Supply Ground.
29, 37, 38 9, 10, 15, 16
NC
No Connect: These pins may be driven or left
unconnected.
5
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
NOTE: 1. L = V
IL
(LOW), H = V
IH
(HIGH), X = V
IL
or V
IH
("Don't Care").
2. V
PPH
= V
PPH
1
(3.3V) or V
PPH
2
(5V).
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
IH
, RP# may be at V
IH
or V
HH
.
7. V
HH
= 12V.
8. V
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
9. A1A8, A10A17 = V
IL
.
10. Value reflects DQ8DQ15.
TRUTH TABLE (MT28F400B3)
1
FUNCTION
RP#
CE#
OE#
WE# WP# BYTE# A0
A9
V
PP
DQ0DQ7 DQ8DQ14 DQ15/A-1
Standby
H
H
X
X
X
X
X
X
X
High-Z
High-Z
High-Z
RESET
L
X
X
X
X
X
X
X
X
High-Z
High-Z
High-Z
READ
READ (word mode)
H
L
L
H
X
H
X
X
X
Data-Out Data-Out Data-Out
READ (byte mode)
H
L
L
H
X
L
X
X
X
Data-Out High-Z
A-1
Output Disable
H
L
H
H
X
X
X
X
X
High-Z
High-Z
High-Z
WRITE/ERASE (EXCEPT BOOT BLOCK)
2
ERASE SETUP
H
L
H
L
X
X
X
X
X
20h
X
X
ERASE CONFIRM
3
H
L
H
L
X
X
X
X
V
PPH
D0h
X
X
WRITE SETUP
H
L
H
L
X
X
X
X
X
10h/40h
X
X
WRITE (word mode)
4
H
L
H
L
X
H
X
X
V
PPH
Data-In
Data-In
Data-In
WRITE (byte mode)
4
H
L
H
L
X
L
X
X
V
PPH
Data-In
X
A-1
READ ARRAY
5
H
L
H
L
X
X
X
X
X
FFh
X
X
WRITE/ERASE (BOOT BLOCK)
2, 7
ERASE SETUP
H
L
H
L
X
X
X
X
X
20h
X
X
ERASE CONFIRM
3
V
HH
L
H
L
X
X
X
X
V
PPH
D0h
X
X
ERASE CONFIRM
3, 6
H
L
H
L
H
X
X
X
V
PPH
D0h
X
X
WRITE SETUP
H
L
H
L
X
X
X
X
X
10h/40h
X
X
WRITE (word mode)
4
V
HH
L
H
L
X
H
X
X
V
PPH
Data-In
Data-In
Data-In
WRITE (word mode)
4, 6
H
L
H
L
H
H
X
X
V
PPH
Data-In
Data-In
Data-In
WRITE (byte mode)
4
V
HH
L
H
L
X
L
X
X
V
PPH
Data-In
X
A-1
WRITE (byte mode)
4, 6
H
L
H
L
H
L
X
X
V
PPH
Data-In
X
A-1
READ ARRAY
5
H
L
H
L
X
X
X
X
X
FFh
X
X
DEVICE IDENTIFICATION
8, 9
Manufacturer Compatibility
H
L
L
H
X
H
L
V
ID
X
89h
00h
(word mode)
10
Manufacturer Compatibility
H
L
L
H
X
L
L
V
ID
X
89h
High-Z
X
(byte mode)
Device (word mode, top boot)
10
H
L
L
H
X
H
H
V
ID
X
70h
44h
Device (byte mode, top boot)
H
L
L
H
X
L
H
V
ID
X
70h
High-Z
X
Device (word mode, bottom boot)
10
H
L
L
H
X
H
H
V
ID
X
71h
44h
Device (byte mode, bottom boot)
H
L
L
H
X
L
H
V
ID
X
71h
High-Z
X
6
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
NOTE: 1. L = V
IL
, H = V
IH
, X = V
IL
or V
IH
.
2. V
PPH
= V
PPH
1
= 3.3V or V
PPH
2
= 5V.
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
IH
, RP# may be at V
IH
or V
HH
.
7. V
HH
= 12V.
8. V
ID
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
9. A1A8, A10A18 = V
IL
.
TRUTH TABLE (MT28F004B3)
1
FUNCTION
RP#
CE#
OE#
WE#
WP#
A0
A9
V
PP
DQ0DQ7
Standby
H
H
X
X
X
X
X
X
High-Z
RESET
L
X
X
X
X
X
X
X
High-Z
READ
READ
H
L
L
H
X
X
X
X
Data-Out
Output Disable
H
L
H
H
X
X
X
X
High-Z
WRITE/ERASE (EXCEPT BOOT BLOCK)
2
ERASE SETUP
H
L
H
L
X
X
X
X
20h
ERASE CONFIRM
3
H
L
H
L
X
X
X
V
PPH
D0h
WRITE SETUP
H
L
H
L
X
X
X
X
10h/40h
WRITE
4
H
L
H
L
X
X
X
V
PPH
Data-In
READ ARRAY
5
H
L
H
L
X
X
X
X
FFh
WRITE/ERASE (BOOT BLOCK)
2, 7
ERASE SETUP
H
L
H
L
X
X
X
X
20h
ERASE CONFIRM
3
V
HH
L
H
L
X
X
X
V
PPH
D0h
ERASE CONFIRM
3, 6
H
L
H
L
H
X
X
V
PPH
D0h
WRITE SETUP
H
L
H
L
X
X
X
X
10h/40h
WRITE
4
V
HH
L
H
L
X
X
X
V
PPH
Data-In
WRITE
4, 6
H
L
H
L
H
X
X
V
PPH
Data-In
READ ARRAY
5
H
L
H
L
X
X
X
X
FFh
DEVICE IDENTIFICATION
8, 9
Manufacturer Compatibility
H
L
L
H
X
L
V
ID
X
89h
Device (top boot)
H
L
L
H
X
H
V
ID
X
78h
Device (bottom boot)
H
L
L
H
X
H
V
ID
X
79h
7
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
FUNCTIONAL DESCRIPTION
The MT28F004B3 and MT28F400B3 Flash devices in-
corporate a number of features ideally suited for system
firmware. The memory array is segmented into indi-
vidual erase blocks. Each block may be erased without
affecting data stored in other blocks. These memory
blocks are read, written and erased with commands to
the command execution logic (CEL). The CEL controls
the operation of the internal state machine (ISM), which
completely controls all WRITE, BLOCK ERASE and VERIFY
operations. The ISM protects each memory location from
over-erasure and optimizes each memory location for
maximum data retention. In addition, the ISM greatly
simplifies the control necessary for writing the device in-
system or in an external programmer.
The Functional Description provides detailed infor-
mation on the operation of the MT28F004B3 and
MT28F400B3 and is organized into these sections:
Overview
Memory Architecture
Output (READ) Operations
Input Operations
Command Set
ISM Status Register
Command Execution
Error Handling
WRITE/ERASE Cycle Endurance
Power Usage
Power-Up
OVERVIEW
SMART 3 TECHNOLOGY (B3)
Smart 3 technology allows maximum flexibility for in-
system READ, WRITE and ERASE operations. WRITE and
ERASE operations may be executed with a V
PP
voltage of
3.3V or 5V. Due to process technology advances, 5V V
PP
is
optimal for application and production programming.
SEVEN INDEPENDENTLY ERASABLE MEMORY
BLOCKS
The MT28F004B3 and MT28F400B3 are organized into
seven independently erasable memory blocks that allow
portions of the memory to be erased without affecting the
rest of the memory data. A special boot block is hard-
ware-protected against inadvertent erasure or writing by
requiring either a super-voltage on the RP# pin or driving
the WP# pin HIGH. One of these two conditions must
exist along with the V
PP
voltage (3.3V or 5V) on the V
PP
pin
before a WRITE or ERASE is performed on the boot block.
The remaining blocks require only the V
PP
voltage be
present on the V
PP
pin before writing or erasing.
HARDWARE-PROTECTED BOOT BLOCK
This block of the memory array can be erased or
written only when the RP# pin is taken to V
HH
or when the
WP# pin is brought HIGH. This provides additional secu-
rity for the core firmware during in-system firmware
updates should an unintentional power fluctuation or
system reset occur. The MT28F004B3 and MT28F400B3
are available with the boot block starting at the bottom of
the address space ("B" suffix) or the top of the address
space ("T" suffix).
SELECTABLE BUS SIZE (MT28F400B3 ONLY)
The MT28F400B3 allows selection of an 8-bit
(512K x 8) or 16-bit (256K x 16) data bus for reading and
writing the memory. The BYTE# pin is used to select the
bus width. In the x16 configuration, control data is read
or written only on the lower eight bits (DQ0DQ7).
Data written to the memory array utilizes all active
data pins for the selected configuration. When the x8
configuration is selected, data is written in byte form;
when the x16 configuration is selected, data is written in
word form.
INTERNAL STATE MACHINE (ISM)
BLOCK ERASE and BYTE/WORD WRITE timing are
simplified with an ISM that controls all erase and write
algorithms in the memory array. The ISM ensures protec-
tion against overerasure and optimizes write margin to
each cell.
During WRITE operations, the ISM automatically in-
crements and monitors WRITE attempts, verifies write
margin on each memory cell and updates the ISM status
register. When BLOCK ERASE is performed, the ISM
automatically overwrites the entire addressed block
(eliminates overerasure), increments and monitors
ERASE attempts, and sets bits in the ISM status register.
ISM STATUS REGISTER
The ISM status register enables an external processor
to monitor the status of the ISM during WRITE and ERASE
operations. Two bits of the 8-bit status register are set and
cleared entirely by the ISM. These bits indicate whether
the ISM is busy with a WRITE or ERASE task and when an
ERASE has been suspended. Additional error informa-
tion is set in three other bits: V
PP
status, write status and
erase status.
COMMAND EXECUTION LOGIC (CEL)
The CEL receives and interprets commands to the
device. These commands control the operation of the
ISM and the read path (i.e., memory array, ID register or
status register). Commands may be issued to the CEL
while the ISM is active. However, there are restrictions on
8
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
Figure 1
Memory Address Maps
Top Boot
MT28F004B3/400B3xx-xxT
Bottom Boot
MT28F004B3/400B3xx-xxB
3FFFFh
3E000h
3DFFFh
3D000h
3CFFFh
3C000h
3BFFFh
30000h
2FFFFh
20000h
1FFFFh
10000h
0FFFFh
00000h
16KB Boot Block
8KB Parameter Block
8KB Parameter Block
96KB Main Block
128KB Main Block
128KB Main Block
128KB Main Block
WORD ADDRESS
7FFFFh
7C000h
7BFFFh
7A000h
79FFFh
78000h
77FFFh
60000h
5FFFFh
40000h
3FFFFh
20000h
1FFFFh
00000h
BYTE ADDRESS
3FFFFh
30000h
2FFFFh
20000h
1FFFFh
10000h
0FFFFh
04000h
03FFFh
03000h
02FFFh
02000h
01FFFh
00000h
128KB Main Block
128KB Main Block
128KB Main Block
96KB Main Block
8KB Parameter Block
8KB Parameter Block
16KB Boot Block
WORD ADDRESS
7FFFFh
60000h
5FFFFh
40000h
3FFFFh
20000h
1FFFFh
08000h
07FFFh
06000h
05FFFh
04000h
03FFFh
00000h
BYTE ADDRESS
what commands are allowed in this condition. See the
Command Execution section for more detail.
DEEP POWER-DOWN MODE
To allow for maximum power conservation, the
MT28F004B3 and MT28F400B3 feature a very low cur-
rent, deep power-down mode. To enter this mode, the
RP# pin is taken to V
SS
0.2V. In this mode, the current
draw is a maximum of 8A at 3.3V V
CC
. Entering deep
power-down also clears the status register and sets the
ISM to the read array mode.
MEMORY ARCHITECTURE
The MT28F004B3 and MT28F400B3 memory array
architecture is designed to allow sections to be erased
without disturbing the rest of the array. The array is
divided into seven addressable blocks that vary in size
and are independently erasable. When blocks rather than
the entire array are erased, total device endurance is
enhanced, as is system flexibility. Only the ERASE func-
tion is block-oriented. All READ and WRITE operations
are done on a random-access basis.
The boot block is protected from unintentional ERASE
or WRITE with a hardware protection circuit which re-
quires that a super-voltage (V
HH
) be applied to RP# or that
the WP# pin be driven HIGH before erasure is com-
menced. The boot block is intended for the core firmware
required for basic system functionality. The remaining
six blocks do not require either of these two conditions be
met before WRITE or ERASE operations.
BOOT BLOCK
The hardware-protected boot block provides extra
security for the most sensitive portions of the firmware.
This 16KB block may only be erased or written when the
RP# pin is at the specified boot block unlock voltage (V
HH
)
of 12V or when the WP# pin is V
IH
. During a WRITE or
ERASE of the boot block, the RP# pin must be held at V
HH
or the WP# pin held HIGH until the ERASE or WRITE is
completed. The V
PP
pin must be at V
PPH
(3.3V or 5V) when
the boot block is written to or erased.
The MT28F004B3 and MT28F400B3 are available in
two configurations and top or bottom boot block. The top
boot block version supports processors of the x86 variety.
The bottom boot block version is intended for 680X0 and
RISC applications. Figure 1 illustrates the memory ad-
dress maps associated with these two versions.
9
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
latched on the falling edge of OE# or CE#, whichever
occurs last. If the contents of the status register change
during a READ of the status register, either OE# or CE#
may be toggled while the other is held LOW to update the
output.
Following a WRITE or ERASE, the device automati-
cally enters the status register read mode. In addition, a
READ during a WRITE or ERASE produces the status
register contents on DQ0DQ7. When the device is in the
erase suspend mode, a READ operation produces the
status register contents until another command is is-
sued. In certain other modes, READ STATUS REGIS-
TER may be given to return to the status register read
mode. All commands and their operations are described
in the Command Set and Command Execution sections.
IDENTIFICATION REGISTER
A READ of the two 8-bit device identification registers
requires the same input sequencing as a READ of the
array. WE# must be HIGH, and OE# and CE# must be
LOW. However, ID register data is output only on DQ0
DQ7, regardless of the condition of BYTE# on the
MT28F400B3. A0 is used to decode between the two bytes
of the device ID register; all other address inputs are
"Don't Care." When A0 is LOW, the manufacturer com-
patibility ID is output, and when A0 is HIGH, the device
ID is output. DQ8DQ15 are High-Z when BYTE# is LOW.
When BYTE# is HIGH, DQ8DQ15 are 00h when the
manufacturer compatibility ID is read and 44h when the
device ID is read.
To get to the identification register read mode, READ
IDENTIFICATION may be issued while the device is in
certain other modes. In addition, the identification regis-
ter read mode can be reached by applying a super-volt-
age (V
ID
) to the A9 pin. Using this method, the ID register
can be read while the device is in any mode. When A9 is
returned to V
IL
or V
IH
, the device returns to the previous
mode.
INPUT OPERATIONS
The DQ pins are used either to input data to the array
or to input a command to the CEL. A command input
issues an 8-bit command to the CEL to control the mode
of operation of the device. A WRITE is used to input data
to the memory array. The following section describes
both types of inputs. More information describing how to
use the two types of inputs to write or erase the device is
provided in the Command Execution section.
COMMANDS
To perform a command input, OE# must be HIGH,
and CE# and WE# must be LOW. Addresses are "Don't
Care" but must be held stable, except during an ERASE
CONFIRM (described in a later section). The 8-bit com-
PARAMETER BLOCKS
The two 8KB parameter blocks store less sensitive and
more frequently changing system parameters and also
may store configuration or diagnostic coding. These
blocks are enabled for erasure when the V
PP
pin is at V
PPH
.
No super-voltage unlock or WP# control is required.
MAIN MEMORY BLOCKS
The four remaining blocks are general-purpose
memory blocks and do not require a super-voltage on
RP# or WP# control to be erased or written. These blocks
are intended for code storage, ROM-resident applica-
tions or operating systems that require in-system update
capability.
OUTPUT (READ) OPERATIONS
The MT28F004B3 and MT28F400B3 feature three dif-
ferent types of READs. Depending on the current mode of
the device, a READ operation produces data from the
memory array, status register or device identification
register. In each of these three cases, the WE#, CE# and
OE# inputs are controlled in a similar manner. Moving
between modes to perform a specific READ is described
in the Command Execution section.
MEMORY ARRAY
To read the memory array, WE# must be HIGH, and
OE# and CE# must be LOW. Valid data is output on the
DQ pins when these conditions have been met and a
valid address is given. Valid data remains on the DQ pins
until the address changes, or until OE# or CE# goes HIGH,
whichever occurs first. The DQ pins continue to output
new data after each address transition as long as OE# and
CE# remain LOW.
The MT28F400B3 features selectable bus widths.
When the memory array is accessed as a 256K x 16, BYTE#
is HIGH, and data is output on DQ0DQ15. To access the
memory array as a 512K x 8, BYTE# must be LOW, DQ8
DQ14 must be High-Z, and all data must be output on
DQ0DQ7. The DQ15/A-1 pin becomes the lowest or-
der address input so that 524,288 locations can be read.
After power-up or RESET, the device is automatically
in the array read mode. All commands and their opera-
tions are described in the Command Set and Command
Execution sections.
STATUS REGISTER
Performing a READ of the status register requires the
same input sequencing as a READ of the array except that
the address inputs are "Don't Care." The status register
contents are always output on DQ0DQ7, regardless of
the condition of BYTE# on the MT28F400B3. DQ8DQ15
are LOW when BYTE# is HIGH, and DQ8DQ14 are High-
Z when BYTE# is LOW. Data from the status register is
10
4Mb Smart 3 Boot Block Flash Memory
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F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
mand is input on DQ0DQ7, while DQ8DQ15 are
"Don't Care" on the MT28F400B3. The command is
latched on the rising edge of CE# (CE#-controlled) or
WE# (WE#-controlled), whichever occurs first. The con-
dition of BYTE# on the MT28F400B3 has no effect on a
command input.
MEMORY ARRAY
A WRITE to the memory array sets the desired bits to
logic 0s but cannot change a given bit to a logic 1 from a
logic 0. Setting any bits to a logic 1 requires that the entire
block be erased. To perform a WRITE, OE# must be HIGH,
CE# and WE# must be LOW, and V
PP
must be set to V
PPH
1
or V
PPH
2
. Writing to the boot block also requires that the
RP# pin be at V
HH
or WP# be HIGH. A0A17/(A18) provide
the address to be written, while the data to be written to
the array is input on the DQ pins. The data and addresses
are latched on the rising edge of CE# (CE#-controlled) or
WE# (WE#-controlled), whichever occurs first. A WRITE
must be preceded by a WRITE SETUP command. Details
on how to input data to the array are described in the
Write Sequence section.
Selectable bus sizing applies to WRITEs as it does to
READs on the MT28F400B3. When BYTE# is LOW (byte
mode), data is input on DQ0DQ7, DQ8DQ14 are High-
Z and DQ15 becomes the lowest order address input.
When BYTE# is HIGH (word mode), data is input on DQ0
DQ15.
COMMAND SET
To simplify writing of the memory blocks, the
MT28F004B3 and MT28F400B3 incorporate an ISM that
controls all internal algorithms for the WRITE and ERASE
cycles. An 8-bit command set is used to control the de-
vice. Details on how to sequence commands are pro-
vided in the Command Execution section. Table 1 lists
the valid commands.
ISM STATUS REGISTER
The 8-bit ISM status register (see Table 2) is polled to
check for WRITE or ERASE completion or any related
errors. During or following a WRITE, ERASE or ERASE
SUSPEND, a READ operation outputs the status register
Table 1
Command Set
COMMAND
HEX CODE DESCRIPTION
RESERVED
00h
This command and all unlisted commands are invalid and should not
be called. These commands are reserved to allow for future feature
enhancements.
READ ARRAY
FFh
Must be issued after any other command cycle before the array can be
read. It is not necessary to issue this command after power-up or RESET.
IDENTIFY DEVICE
90h
Allows the device ID and manufacturer compatibility ID to be read. A0 is
used to decode between the manufacturer compatibility ID (A0 = LOW)
and device ID (A0 = HIGH).
READ STATUS REGISTER
70h
Allows the status register to be read. Please refer to Table 2 for more
information on the status register bits.
CLEAR STATUS REGISTER
50h
Clears status register bits 3-5, which cannot be cleared by the ISM.
ERASE SETUP
20h
The first command given in the two-cycle ERASE sequence. The ERASE is
not completed unless followed by ERASE CONFIRM.
ERASE CONFIRM/RESUME
D0h
The second command given in the two-cycle ERASE sequence. Must follow
an ERASE SETUP command to be valid. Also used during an ERASE
SUSPEND to resume the ERASE.
WRITE SETUP
40h or
The first command given in the two-cycle WRITE sequence. The write
10h
data and address are given in the following cycle to complete the WRITE.
ERASE SUSPEND
B0h
Requests a halt of the ERASE and puts the device into the erase suspend
mode. When the device is in this mode, only READ STATUS REGISTER,
READ ARRAY and ERASE RESUME commands may be executed.
11
4Mb Smart 3 Boot Block Flash Memory
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2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
contents on DQ0DQ7 without prior command. While
the status register contents are read, the outputs are not
updated if there is a change in the ISM status unless OE#
or CE# is toggled. If the device is not in the write, erase,
erase suspend or status register read mode, READ STA-
TUS REGISTER (70h) can be issued to view the status
register contents.
All of the defined bits are set by the ISM, but only the
ISM and erase suspend status bits are reset by the ISM.
The erase, write and V
PP
status bits must be cleared using
CLEAR STATUS REGISTER. If the V
PP
status bit (SR3) is
set, the CEL does not allow further WRITE or ERASE
operations until the status register is cleared. This en-
ables the user to choose when to poll and clear the status
register. For example, the host system may perform mul-
tiple BYTE WRITE operations before checking the status
register instead of checking after each individual WRITE.
Asserting the RP# signal or powering down the device
also clears the status register.
STATUS
BIT #
STATUS REGISTER BIT
DESCRIPTION
SR7
ISM STATUS (ISMS)
The ISMS bit displays the active status of the state machine during
1 = Ready
WRITE or BLOCK ERASE operations. The controlling logic polls this
0 = Busy
bit to determine when the erase and write status bits are valid.
SR6
ERASE SUSPEND STATUS (ESS)
Issuing an ERASE SUSPEND places the ISM in the suspend mode
1 = ERASE suspended
and sets this and the ISMS bit to "1." The ESS bit remains "1"
0 = ERASE in progress/completed
until an ERASE RESUME is issued.
SR5
ERASE STATUS (ES)
ES is set to "1" after the maximum number of ERASE cycles is
1 = BLOCK ERASE error
executed by the ISM without a successful verify. ES is only cleared
0 = Successful BLOCK ERASE
by a CLEAR STATUS REGISTER command or after a RESET.
SR4
WRITE STATUS (WS)
WS is set to "1" after the maximum number of WRITE cycles is
1 = WORD/BYTE WRITE error
executed by the ISM without a successful verify. WS is only cleared
0 = Successful WORD/BYTE WRITE by a CLEAR STATUS REGISTER command or after a RESET.
SR3
V
PP
STATUS (V
PP
S)
V
PP
S detects the presence of a V
PP
voltage. It does not monitor V
PP
1 = No V
PP
voltage detected
continuously, nor does it indicate a valid V
PP
voltage. The V
PP
pin is
0 = V
PP
present
sampled for 3.3V or 5V after WRITE or ERASE CONFIRM is given.
V
PP
S must be cleared by CLEAR STATUS REGISTER or by a RESET.
SR0-2
RESERVED
Reserved for future use.
Table 2
Status Register Bit Definitions
ISMS
ESS
ES
WS
V
PP
S
R
7
6
5
4
3
20
12
4Mb Smart 3 Boot Block Flash Memory
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F45_3.p65 Rev. 3, Pub. 12/01
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4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
COMMAND EXECUTION
Commands are issued to bring the device into differ-
ent operational modes. Each mode allows specific opera-
tions to be performed. Several modes require a sequence
of commands to be written before they are reached. The
following section describes the properties of each mode,
and Table 3 lists all command sequences required to
perform the desired operation.
READ ARRAY
The array read mode is the initial state of the device
upon power-up and after a RESET. If the device is in any
other mode, READ ARRAY (FFh) must be given to return
to the array read mode. Unlike the WRITE SETUP com-
mand (40h), READ ARRAY does not need to be given
before each individual read access.
IDENTIFY DEVICE
IDENTIFY DEVICE (90h) may be written to the CEL to
enter the identify device mode. While the device is in this
mode, any READ produces the device ID when A0 is
HIGH and manufacturer compatibility ID when A0 is
LOW. The device remains in this mode until another
command is given.
WRITE SEQUENCE
Two consecutive cycles are needed to write data to the
array. WRITE SETUP (40h or 10h) is given in the first
Table 3
Command Sequences
BUS
FIRST
SECOND
CYCLES
CYCLE
CYCLE
COMMANDS
REQ'D OPERATION ADDRESS DATA OPERATION ADDRESS DATA
NOTES
READ ARRAY
1
WRITE
X
FFh
1
IDENTIFY DEVICE
3
WRITE
X
90h
READ
IA
ID
2, 3
READ STATUS REGISTER
2
WRITE
X
70h
READ
X
SRD
4
CLEAR STATUS REGISTER
1
WRITE
X
50h
ERASE SETUP/CONFIRM
2
WRITE
X
20h
WRITE
BA
D0h
5, 6
ERASE SUSPEND/RESUME
2
WRITE
X
B0h
WRITE
X
D0h
WRITE SETUP/WRITE
2
WRITE
X
40h
WRITE
WA
WD
6, 7
ALTERNATE WORD/BYTE
2
WRITE
X
10h
WRITE
WA
WD
6, 7
WRITE
NOTE: 1. Must follow WRITE or ERASE CONFIRM commands to the CEL to enable Flash array READ cycles.
2. IA = Identify Address: 00h for manufacturer compatibility ID; 01h for device ID.
3. ID = Identify Data.
4. SRD = Status Register Data.
5. On x16 (X00) devices BA = Block Address (A12A17), on x8 (00X) devices BA = Block Address (A13A17/[A18]).
6. Addresses are "Don't Care" in first cycle but must be held stable.
7. WA = Address to be written; WD = Data to be written to WA.
cycle. The next cycle is the WRITE, during which the write
address and data are issued and V
PP
is brought to V
PPH
.
Writing to the boot block also requires that the RP# pin be
brought to V
HH
or that the WP# pin be brought HIGH at
the same time V
PP
is brought to V
PPH
. The ISM now begins
to write the word or byte. V
PP
must be held at V
PPH
until
the WRITE is completed (SR7 = 1).
While the ISM executes the WRITE, the ISM status bit
(SR7) is at "0," and the device does not respond to any
commands. Any READ operation produces the status
register contents on DQ0DQ7. When the ISM status bit
(SR7) is set to a logic 1, the WRITE has been completed,
and the device goes into the status register read mode
until another command is given.
After the ISM has initiated the WRITE, it cannot be
aborted except by a RESET or by powering down the part.
Doing either during a WRITE corrupts the data being
written. If only the WRITE SETUP command has been
given, the WRITE may be nullified by performing a null
WRITE. To execute a null WRITE, FFh must be written
when BYTE# is LOW, or FFFFh must be written when
BYTE# is HIGH. When the ISM status bit (SR7) has been
set, the device is in the status register read mode until
another command is issued.
13
4Mb Smart 3 Boot Block Flash Memory
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4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
ERASE SEQUENCE
Executing an ERASE sequence sets all bits within a
block to logic 1. The command sequence necessary to
execute an ERASE is similar to that of a WRITE. To provide
added security against accidental block erasure, two con-
secutive command cycles are required to initiate an ERASE
of a block. In the first cycle, addresses are "Don't Care,"
and ERASE SETUP (20h) is given. In the second cycle, V
PP
must be brought to V
PPH
, an address within the block to
be erased must be issued, and ERASE CONFIRM (D0h)
must be given. If a command other than ERASE CON-
FIRM is given, the write and erase status bits (SR4 and
SR5) are set, and the device is in the status register read
mode.
After the ERASE CONFIRM (D0h) is issued, the ISM
starts the ERASE of the addressed block. Any READ op-
eration outputs the status register contents on DQ0
DQ7. V
PP
must be held at V
PPH
until the ERASE is com-
pleted (SR7 = 1). When the ERASE is completed, the
device is in the status register read mode until another
command is issued. Erasing the boot block also requires
that either the RP# pin be set to V
HH
or the WP# pin be
held HIGH at the same time V
PP
is set to V
PPH
.
ERASE SUSPENSION
The only command that may be issued while an ERASE
is in progress is ERASE SUSPEND. This command en-
ables other commands to be executed while pausing the
ERASE in progress. When the device has reached the
erase suspend mode, the erase suspend status bit (SR6)
and ISM status bit (SR7) are set. The device may now be
given a READ ARRAY, ERASE RESUME or READ STATUS
REGISTER command. After READ ARRAY has been is-
sued, any location not within the block being erased may
be read. If ERASE RESUME is issued before SR6 has been
set, the device immediately proceeds with the ERASE in
progress.
ERROR HANDLING
After the ISM status bit (SR7) has been set, the V
PP
(SR3), write (SR4) and erase (SR5) status bits may be
checked. If one or a combination of these three bits has
been set, an error has occurred. The ISM cannot reset
these three bits. To clear these bits, CLEAR STATUS REG-
ISTER (50h) must be given. If the V
PP
status bit (SR3) is set,
further WRITE or ERASE operations cannot resume until
the status register is cleared. Table 4 lists the combina-
tion of errors.
Table 4
Status Register Error Code Description
1
STATUS BITS
SR5
SR4
SR3
ERROR DESCRIPTION
0
0
0
No errors
0
0
1
V
PP
voltage error
0
1
0
WRITE error
0
1
1
WRITE error, V
PP
voltage not valid at time of WRITE
1
0
0
ERASE error
1
0
1
ERASE error, V
PP
voltage not valid at time of ERASE CONFIRM
1
1
0
Command sequencing error or WRITE/ERASE error
1
1
1
Command sequencing error, V
PP
voltage error, with WRITE and ERASE errors
NOTE: 1. SR3-SR5 must be cleared using CLEAR STATUS REGISTER.
14
4Mb Smart 3 Boot Block Flash Memory
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F45_3.p65 Rev. 3, Pub. 12/01
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4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
WRITE/ERASE CYCLE ENDURANCE
The MT28F004B3 and MT28F400B3 are designed and
fabricated to meet advanced firmware storage require-
ments. To ensure this level of reliability, V
PP
must be at
3.3V 0.3V or 5V 10% during WRITE or ERASE cycles.
Due to process technology advances, 5V V
PP
is optimal
for application and production programming.
POWER USAGE
The MT28F004B3 and MT28F400B3 offer several
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down mode
is enabled by bringing RP# LOW. Current draw (I
CC
) in
this mode is a maximum of 8A at 3.3V V
CC
. When CE# is
HIGH, the device enters standby mode. In this mode,
maximum I
CC
current is 100A at 3.3V V
CC
. If CE# is
brought HIGH during a WRITE or ERASE, the ISM contin-
ues to operate, and the device consumes the respective
active power until the WRITE or ERASE is completed.
POWER-UP
The likelihood of unwanted WRITE or ERASE opera-
tions is minimized because two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while V
CC
is
ramping, one of the following conditions must be met:
RP# must be held LOW until V
CC
is at valid
functional level; or
CE# or WE# may be held HIGH and
RP# must be toggled from V
CC
-GND-V
CC
.
After a power-up or RESET, the status register is reset,
and the device enters the array read mode.
Figure 2
Power-Up/Reset Timing Diagram
VALID
VALID
V
CC
(3.3V)
Data
Address
t
Note 1
RP#
RWH
t
AA
NOTE:
1. V
CC
must be within the valid operating range before RP#
goes HIGH.
UNDEFINED
15
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
YES
NO
WRITE 40h or 10h
V
PP
= 5V
Start
WRITE Word or Byte
Address/Data
STATUS REGISTER
READ
SR7 = 1?
Complete Status
Check (optional)
WRITE Complete
3
2
NO
Start (WRITE completed)
YES
SR4 = 0?
SR3 = 0?
NO
YES
BYTE/WORD WRITE Error
5
WRITE Successful
V Error
PP
4, 5
COMPLETE WRITE STATUS-CHECK
SEQUENCE
SELF-TIMED WRITE SEQUENCE
(WORD OR BYTE WRITE)
1
NOTE: 1. Sequence may be repeated for additional BYTE or WORD WRITEs.
2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is
cleared.
3. Device will be in status register read mode. To return to the array read mode, the FFh command must be issued.
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE
or ERASE operations are allowed by the CEL.
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
16
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
NO
Start (ERASE completed)
YES
SR4, 5 = 1?
SR3 = 0?
YES
YES
Command Sequence Error
SR5 = 0?
NO
NO
6
V Error
PP
BLOCK ERASE Error
5, 6
6
ERASE Successful
YES
NO
V
PP
= 3.3V or 5V
Complete Status
Check (optional)
ERASE Complete
NO
YES
Suspend ERASE?
STATUS REGISTER
READ
SR7 = 1?
WRITE 20h
Start
WRITE D0h,
Block Address
Suspend
Sequence
ERASE Resumed
ERASE
Busy
3
4
2
SELF-TIMED BLOCK ERASE SEQUENCE
1
COMPLETE BLOCK ERASE
STATUS-CHECK SEQUENCE
NOTE: 1. Sequence may be repeated to erase additional blocks.
2. Complete status check is not required. However, if SR3 = 1, further ERASEs are inhibited until the status register is
cleared.
3. To return to the array read mode, the FFh command must be issued.
4. Refer to the ERASE SUSPEND flowchart for more information.
5. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE
or ERASE operations are allowed by the CEL.
6. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
17
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
ERASE SUSPEND/RESUME SEQUENCE
NO
WRITE B0h
(ERASE SUSPEND)
Start (ERASE in progress)
WRITE FFh
(READ ARRAY)
STATUS REGISTER
READ
YES
SR6 = 1?
SR7 = 1?
NO
YES
NO
YES
Done
Reading?
WRITE D0h
(ERASE RESUME)
Resume ERASE
ERASE Completed
V
PP
= 3.3V or 5V
18
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
Supply
Relative to V
SS
..................................... -0.5V to +4V**
Input Voltage Relative to V
SS
.................... -0.5V to +4V**
V
PP
Voltage Relative to V
SS
........................ -0.5V to +5.5V
RP# or A9 Pin Voltage
Relative to V
SS
................................. -0.5V to +12.6V
Temperature Under Bias .......................... -40C to +85C
Storage Temperature (plastic) ............... -55C to +125C
Power Dissipation ......................................................... 1W
*Stresses greater than those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
**V
CC
, input and I/O pins may transition to -2V for <20ns
and V
CC
+ 2V for <20ns.
Voltage may pulse to -2V for <20ns and 7V for <20ns.
Voltage may pulse to -2V for <20ns and 14V for <20ns.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC READ
OPERATING CONDITIONS
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C)
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
3.3V Supply Voltage
V
CC
3
3.6
V
1
Input High (Logic 1) Voltage, all inputs
V
IH
2
V
CC
+ 0.5
V
1
Input Low (Logic 0) Voltage, all inputs
V
IL
-0.5
0.8
V
1
Device Identification Voltage, A9
V
ID
10
12.6
V
1
V
PP
Supply Voltage
V
PP
-0.5
5.5
V
1
DC OPERATING CHARACTERISTICS
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C)
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS NOTES
OUTPUT VOLTAGE LEVELS
V
OH
V
CC
- 0.2
V
Output High Voltage (I
OH
= -100A)
1
Output Low Voltage (I
OL
= 2mA)
V
OL
0.45
V
INPUT LEAKAGE CURRENT
Any input (0V
V
IN
V
CC
);
I
L
-1
1
A
All other pins not under test = 0V
INPUT LEAKAGE CURRENT: A9 INPUT
I
ID
500
A
(10V
A9 12V = V
ID
)
INPUT LEAKAGE CURRENT: RP# INPUT
I
HH
500
A
(10V
RP# 12V = V
HH
)
OUTPUT LEAKAGE CURRENT
I
OZ
-10
10
A
(D
OUT
is disabled; 0V
V
OUT
V
CC
)
NOTE: 1. All voltages referenced to V
SS
.
19
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
CAPACITANCE
(T
A
= 25C; f = 1 MHz)
PARAMETER/CONDITION
SYMBOL
MAX
UNITS NOTES
Input Capacitance
C
I
9
p F
Output Capacitance
C
O
12
pF
READ AND STANDBY CURRENT DRAIN
1
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C)
PARAMETER/CONDITION
SYMBOL
MAX
UNITS NOTES
READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS
(CE#
0.2V; OE# V
CC
- 0.2V; f =
5 MHz;
I
CC
1
15
mA
2, 3
Other inputs
0.2V or V
CC
- 0.2V; RP#
V
CC
- 0.2V)
READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS
(CE#
0.2V; OE# V
CC
- 0.2V; f =
5 MHz;
I
CC
2
15
mA
2, 3
Other inputs
0.2V or V
CC
- 0.2V; RP# = V
CC
- 0.2V)
STANDBY CURRENT: TTL INPUT LEVELS
V
CC
power supply standby current
I
CC
3
2
mA
(CE# = RP# = V
IH
; Other inputs = V
IL
or V
IH
)
STANDBY CURRENT: CMOS INPUT LEVELS
V
CC
power supply standby current
I
CC
4
100
A
(CE# = RP# = V
CC
- 0.2V)
DEEP POWER-DOWN CURRENT: V
CC
SUPPLY (RP# = V
SS
0.2V)
I
CC
6
8
A
STANDBY OR READ CURRENT: V
PP
SUPPLY (V
PP
5.5V)
I
PP
1
15
A
DEEP POWER-DOWN CURRENT: V
PP
SUPPLY (RP# = V
SS
0.2V)
I
PP
2
5
A
NOTE: 1. V
CC
= MAX during I
CC
tests.
2. I
CC
is dependent on cycle rates.
3. I
CC
is dependent on output loading. Specified values are obtained with the outputs open.
20
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
1
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C); V
CC
= +3.3V 0.3V
AC CHARACTERISTICS
-8/-8 ET
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
READ cycle time
t
RC
80
ns
Access time from CE#
t
ACE
80
ns
2
Access time from OE#
t
AOE
40
ns
2
Access time from address
t
AA
80
ns
RP# HIGH to output valid delay
t
RWH
1,000
ns
OE# or CE# HIGH to output in High-Z
t
OD
25
ns
Output hold time from OE#, CE# or address change
t
OH
0
ns
RP# LOW pulse width
t
RP
150
ns
NOTE: 1. Measurements tested under AC Test Conditions.
2. OE# may be delayed by
t
ACE minus
t
AOE after CE# falls before
t
ACE is affected.
AC TEST CONDITIONS
Input pulse levels ...................................................... 0V to 3V
Input rise and fall times ................................................ <10ns
Input timing reference level ........................................... 1.5V
Output timing reference level ........................................ 1.5V
Output load ................................... 1 TTL gate and C
L
= 50pF
21
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
WORD-WIDE READ CYCLE
1
VALID DATA
VALID ADDRESS
CE#
A0A17/(A18)
OE#
DQ0DQ15
tRC
tACE
tAOE
tOD
tOH
tAA
WE#
RP#
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
tRWH
DON'T CARE
UNDEFINED
TIMING PARAMETERS
Commercial Temperature (0C
T
A
+70C)
Extended Temperature (-40C
T
A
+85C)
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
t
RC
80
ns
t
ACE
80
ns
t
AOE
40
ns
t
AA
80
ns
NOTE: 1. BYTE# = HIGH (MT28F400B3 only).
t
RWH
1,000
ns
t
OD
25
ns
t
OH
0
ns
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
22
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
BYTE-WIDE READ CYCLE
1
VALID DATA
VALID ADDRESS
CE#
(A - 1)A17/(A18)
OE#
DQ0DQ7
DON'T CARE
UNDEFINED
tRC
tACE
tAOE
tOD
tOH
tAA
WE#
RP#
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
tRWH
DQ8DQ14
2
V
IH
V
IL
HIGH-Z
NOTE: 1. BYTE# = LOW (MT28F400B3 only).
TIMING PARAMETERS
Commercial Temperature (0C
T
A
+70C)
Extended Temperature (-40C
T
A
+85C)
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
t
RC
80
ns
t
ACE
80
ns
t
AOE
40
ns
t
AA
80
ns
t
RWH
1,000
ns
t
OD
25
ns
t
OH
0
ns
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
23
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
WRITE/ERASE CURRENT DRAIN
4
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C); V
CC
= +3.3V 0.3V
3.3V V
PP
5V V
PP
PARAMETER/CONDITION
SYMBOL
MAX
MAX
UNITS NOTES
WORD WRITE CURRENT: V
CC
SUPPLY
I
CC
7
20
20
mA
5
WORD WRITE CURRENT: V
PP
SUPPLY
I
PP
3
20
20
mA
5
BYTE WRITE CURRENT: V
CC
SUPPLY
I
CC
8
20
20
mA
6
BYTE WRITE CURRENT: V
PP
SUPPLY
I
PP
4
20
20
mA
6
ERASE CURRENT: V
CC
SUPPLY
I
CC
9
25
25
mA
ERASE CURRENT: V
PP
SUPPLY
I
PP
5
25
30
mA
ERASE SUSPEND CURRENT: V
CC
SUPPLY
I
CC
10
8
8
mA
7
(ERASE suspended)
ERASE SUSPEND CURRENT: V
PP
SUPPLY
I
PP
6
200
200
A
(ERASE suspended)
RECOMMENDED DC WRITE/ERASE CONDITIONS
1
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C); V
CC
= +3.3V 0.3V
PARAMETER/CONDITION
SYMBOL
MIN
MAX UNITS NOTES
V
PP
WRITE/ERASE lockout voltage
V
PPLK
1.5
V
2
V
PP
voltage during WRITE/ERASE operation
V
PPH
1
3
3.6
V
3
V
PP
voltage during WRITE/ERASE operation
V
PPH
2
4.5
5.5
V
Boot block unlock voltage
V
HH
10
12.6
V
V
CC
WRITE/ERASE lockout voltage
V
LKO
2
V
NOTE: 1. WRITE operations are tested at V
CC
/V
PP
voltages equal to or less than the previous ERASE, and READ operations are
tested at V
CC
voltages equal to or less than the previous WRITE.
2. Absolute WRITE/ERASE protection when V
PP
V
PPLK
.
3. When 3.3V V
CC
and V
PP
are used, V
CC
cannot exceed V
PP
by more than 500mV during WRITE and ERASE operations.
4. All currents are in RMS unless otherwise noted.
5. Applies to MT28F400B3 only.
6. Applies to MT28F004B3 and MT28F400B3 with BYTE = LOW.
7. Parameter is specified when device is not accessed. Actual current draw will be I
CC
10
plus read current if a READ is
executed while the device is in erase suspend mode.
24
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS:
WE# (CE#)-CONTROLLED WRITES
Commercial Temperature (0C
T
A
+70C) and Extended Temperature (-40C T
A
+85C); V
CC
= +3.3V 0.3V
AC CHARACTERISTICS
-8/-8 ET
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
WRITE cycle time
t
WC
80
ns
WE# (CE#) HIGH pulse width
t
WPH (
t
CPH)
20
ns
WE# (CE#) pulse width
t
WP (
t
CP)
50
ns
Address setup time to WE# (CE#) HIGH
t
AS
50
ns
Address hold time from WE# (CE#) HIGH
t
AH
0
ns
Data setup time to WE# (CE#) HIGH
t
DS
50
ns
Data hold time from WE# (CE#) HIGH
t
DH
0
ns
CE# (WE#) setup time to WE# (CE#) LOW
t
CS (
t
WS)
0
ns
CE# (WE#) hold time from WE# (CE#) HIGH
t
CH (
t
WH)
0
ns
V
PP
setup time to WE# (CE#) HIGH
t
VPS1
200
ns
1
V
PP
setup time to WE# (CE#) HIGH
t
VPS2
100
ns
2
RP# HIGH to WE# (CE#) LOW delay
t
RS
1,000
ns
RP# at V
HH
or WP# HIGH setup time to WE# (CE#) HIGH
t
RHS
100
ns
3
WRITE duration (WORD or BYTE WRITE)
t
WED1
2
s
5
Boot BLOCK ERASE duration
t
WED2
100
ms
5
Parameter BLOCK ERASE duration
t
WED3
100
ms
5
Main BLOCK ERASE duration
t
WED4
500
ms
5
WE# (CE#) HIGH to busy status (SR7 = 0)
t
WB
200
ns
4
V
PP
hold time from status data valid
t
VPH
0
ns
5
RP# at V
HH
or WP# HIGH hold time from status data valid
t
RHH
0
ns
3
Boot block relock delay time
t
REL
100
ns
6
NOTE: 1. Measured with V
PP
= V
PPH
1
= 3.3V.
2. Measured with V
PP
= V
PPH
2
= 5V.
3. RP# should be held at V
HH
or WP# held HIGH until boot block WRITE or ERASE is complete.
4. WRITE/ERASE times are measured to valid status register data (SR7 = 1).
5. Polling status register before
t
WB is met may falsely indicate WRITE or ERASE completion.
6.
t
REL is required to relock boot block after WRITE or ERASE to boot block.
7. Typical values measured at T
A
= +25C.
8. Assumes no system overhead.
9. Typical WRITE times use checkerboard data pattern.
WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS
3.3V V
PP
5V V
PP
PARAMETER
TYP MAX TYP MAX UNITS NOTES
Boot/parameter BLOCK ERASE time
0.4
7
0.4
7
s
7
Main BLOCK ERASE time
2.8
14
1.5
14
s
7
Main BLOCK WRITE time (byte mode)
1.5
1
s
7, 8, 9
Main BLOCK WRITE time (word mode)
1.5
1
s
7, 8, 9
25
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
DON'T CARE
tWC
tWED1/2/3/4
tRS
A
IN
Status
(SR7=1)
tCH
tCS
[Unlock boot block]
tVPS2
tRHS
tVPH
tAS
tAH
tWP
tWPH
tDS
tDH
CMD
in
tRHH
CMD/
Data-in
CMD
in
WRITE SETUP or
ERASE SETUP input
WRITE or ERASE (block)
address asserted, and
WRITE data or ERASE
CONFIRM issued
WRITE or ERASE
executed, status register
checked for completion
Command for next
operation issued
tDH
tDS
[3.3V V
PP
]
[5V V
PP
]
[Unlock boot block]
tVPS1
Note 1
tAS
tAH
Status
(SR7=0)
tWB
CE#
A0A17/(A18)
OE#
DQ0DQ7/
DQ0DQ15
2
WE#
RP#
3
V
IH
V
IL
V
PP
V
HH
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
WP#
3
V
IH
V
IL
V
IL
V
PPH1
V
PPH2
V
PPLK
[3.3V V
PP
]
WRITE/ERASE CYCLE
WE#-CONTROLLED WRITE/ERASE
t
VPS2
100
ns
t
RS
1,000
ns
t
RHS
100
ns
t
WED1
2
s
t
WED2
100
ms
t
WED3
100
ms
t
WED4
500
ms
t
WB
200
ns
t
VPH
0
ns
t
RHH
0
ns
TIMING PARAMETERS
Commercial Temperature (0C
T
A
+70C)
Extended Temperature (-40C
T
A
+85C)
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
t
WC
80
ns
t
WPH
20
ns
t
WP
50
ns
t
AS
50
ns
t
AH
0
ns
t
DS
50
ns
t
DH
0
ns
t
CS
0
ns
t
CH
0
ns
t
VPS1
200
ns
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
NOTE: 1. Address inputs are "Don't Care" but must be held stable.
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F400B3
only).
3. Either RP# at V
HH
or WP# HIGH unlocks the boot block.
26
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
[3.3V V
PP
]
DON'T CARE
tWC
tWED1/2/3/4
tRS
A
IN
Status
(SR7=1)
tWH
tWS
[Unlock boot block]
tVPS2
tRHS
tVPH
tAS
tAH
tCP
tCPH
tDS
tDH
CMD
in
tRHH
CMD/
Data-in
CMD
in
WRITE SETUP or
ERASE SETUP input
WRITE or ERASE (block)
address asserted, and
WRITE data or ERASE
CONFIRM issued
WRITE or ERASE
executed, status register
checked for completion
Command for next
operation issued
tDH
tDS
[5V V
PP
]
[Unlock boot block]
tVPS1
Note 1
tAS
tAH
Status
(SR7=0)
tWB
WE#
A0A17/(A18)
OE#
DQ0DQ7/
DQ0DQ15
2
CE#
RP#
3
V
IH
V
IL
V
PP
V
IH
V
IL
V
HH
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
WP#
3
V
IH
V
IL
V
IL
V
PPH1
V
PPH2
V
PPLK
WRITE/ERASE CYCLE
CE#-CONTROLLED WRITE/ERASE
t
VPS2
100
ns
t
RS
1,000
ns
t
RHS
100
ns
t
WED1
2
s
t
WED2
100
ms
t
WED3
100
ms
t
WED4
500
ms
t
WB
200
ns
t
VPH
0
ns
t
RHH
0
ns
TIMING PARAMETERS
Commercial Temperature (0C
T
A
+70C)
Extended Temperature (-40C
T
A
+85C)
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
t
WC
80
ns
t
CPH
20
ns
t
CP
50
ns
t
AS
50
ns
t
AH
0
ns
t
DS
50
ns
t
DH
0
ns
t
WS
0
ns
t
WH
0
ns
t
VPS1
200
ns
-8/-8 ET
SYMBOL
MIN
MAX
UNITS
NOTE: 1. Address inputs are "Don't Care" but must be held stable.
2. If BYTE# is LOW, data and command are 8-bit. If BYTE# is HIGH, data is 16-bit and command is 8-bit (MT28F400B3
only).
3. Either RP# at V
HH
or WP# HIGH unlocks the boot block.
27
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
44-PIN PLASTIC SOP
(600 mil)
.016 (0.40)
.010 (0.25)
.066 (1.72)
.020 (0.50)
.015 (0.38)
.007 (0.18)
.005 (0.13)
.004 (0.10)
.643 (16.34)
.620 (15.74)
DETAIL A
PIN #1 INDEX
(ROTATED 90 CW)
SEE DETAIL A
GAGE PLANE
.0315 (0.80)
1.113 (28.27)
1.107 (28.12)
.010 (0.25)
.499 (12.68)
.493 (12.52)
.030 (0.76)
.106 (2.70) MAX
.050 (1.27)
TYP
NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted.
MIN
2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side.
28
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
48-PIN PLASTIC TSOP I
(12mm x 20mm)
.047 (1.20) MAX
.005 (0.12)
.007 (0.18)
24
.006 (0.15)
.010 (0.25)
SEE DETAIL A
.0197 (0.50)
TYP
1
.780 (19.80)
.727 (18.47)
.721 (18.31)
.795 (20.20)
.475 (12.07)
.002 (0.05)
DETAIL A
.016 (0.40)
.024 (0.60)
.0315 (0.80)
.008 (0.20)
.004 (0.10)
.469 (11.91)
25
.010 (0.25)
PLANE
GAGE
.010 (0.25)
48
PIN #1 INDEX
NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted.
MIN
2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side.
29
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
40-PIN PLASTIC TSOP I
(10mm x 20mm)
DETAIL A
.721 (18.31)
.780 (19.80)
.397 (10.08)
.010 (0.25)
.0197 (0.50)
.010 (0.25)
.007 (0.18)
SEE DETAIL A
.795 (20.20)
.727 (18.47)
.006 (0.15)
TYP
.005 (0.13)
.391 (9.93)
.024 (0.60)
.016 (0.40)
.008 (0.20)
.004 (0.10)
.002 (0.05)
.0315 (0.80)
.047 (1.20)
MAX
40
1
20
21
.010 (0.25)
PLANE
GAGE
PIN #1 INDEX
NOTE:
1. All dimensions in inches (millimeters)
MAX
or typical where noted.
MIN
2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
The Micron logo and the M logo are trademarks of Micron Technology, Inc.
30
4Mb Smart 3 Boot Block Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
F45_3.p65 Rev. 3, Pub. 12/01
2001, Micron Technology, Inc.
4Mb
SMART 3 BOOT BLOCK FLASH MEMORY
REVISION HISTORY
Rev. 3, Pub. 12/01 ................................................................................................................................................... 12/01
Updated input capacitance specification
Rev. 2 ......................................................................................................................................................................................... 3/01
Changed to 0.18m process
12V V
PP
no longer supported
10V
V
HH
12V
V
OH
V
CC
- 0.2V
Typical main BLOCK ERASE time changed to 0.4s from 0.5s
MT28F400B3 only available in WG and SG packages
MT28F004B3 only available in VG package
Added 80ns access time for commercial and extended temperature ranges
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