HAL114
Unipolar Hall Switch IC
Edition June 10, 1998
6251-456-1DS
MICRONAS
INTERMETALL
MICRONAS
HAL114
MICRONAS INTERMETALL
2
Unipolar Hall Switch IC
in CMOS technology
Introduction
The HAL114 is a Hall switch produced in CMOS technol-
ogy. The sensor includes a temperature-compensated
Hall plate, a Schmitt trigger, and an open-drain output
transistor (see Fig. 2).
The HAL114 has a unipolar behavior: The output turns
low with a magnetic south pole on the branded side of
the package (see figures 3 and 4). The output turns high
if the magnetic field is removed. The output signal re-
mains high if the magnetic north pole approaches the
branded side of the package.
The sensor is designed for industrial and automotive ap-
plications and operates with supply voltages from 4.5 V
to 24 V in the ambient temperature range from 40
C up
to 150
C.
The HAL114 is available in a SMD-package (SOT-89A)
and in a leaded version (TO-92UA).
Features:
operates from 4.5 V to 24 V supply voltage
overvoltage protection
reverse-voltage protection at V
DD
-pin
short-circuit protected open-drain output by thermal
shutdown
operates with magnetic fields from DC to 20 kHz
stable magnetic switching points over a wide supply
voltage range
the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic switching points
ideal sensor for contactless switches and speed mea-
surement in hostile automotive and industrial environ-
ments
Specifications
switching type: unipolar
output turns low with magnetic south pole on branded
side of package
output turns high if magnetic field is removed
Marking Code
Type
Temperature Range
A
E
C
HAL 114SO,
HAL 114UA
114A
114E
114C
Operating Junction Temperature Range (T
J
)
A: T
J
= 40
C to +170
C
E: T
J
= 40
C to +100
C
C: T
J
= 0
C to +100
C
The relationship between ambient temperature (T
A
) and
junction temperature (T
J
) is explained on page 8.
Hall Sensor Package Codes
Type: 114
HAL XXXPA-T
Temperature Range: A, E, or C
Package: SO for SOT-89A,
UA for TO-92UA
Type: 114
Package: TO-92UA
Temperature Range: T
J
= 40
C to +100
C
Example: HAL 114UA-E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: "Ordering Codes for Hall
Sensors".
Solderability
Package SOT-89A: according to IEC68-2-58
Package TO-92UA: according to IEC68-2-20
OUT
GND
3
2
1
V
DD
Fig. 1: Pin configuration
HAL114
MICRONAS INTERMETALL
3
Functional Description
The HAL114 is a CMOS integrated circuit with a switch-
ing output in response to magnetic fields. It processes
the "Hall Voltage" internally: The Hall Voltage is propor-
tional to the magnetic flux component Bz orthogonal to
an integrated Hall Plate, in case an electric current is im-
posed to the plate. The HAL114 compares the Hall Volt-
age with a predefined threshold and generates the out-
put signal dependent of the direction of the magnetic
field. A special circuit compensates for the temperature
dependent effects of the IC, as well as the external mag-
net. A built-in hysteresis eliminates possible oscillations
of the output signal adjacent to its switching point so that
"output bouncing" is avoided. The output is short-circuit
protected by limiting high currents and by sensing ex-
cess temperature. Shunt protection devices clamp
voltage peaks at the Output-Pin and V
DD
-Pin together
with external series resistors. Reverse current is limited
at the V
DD
-Pin by an internal series resistor up to 15 V.
No external reverse protection diode is needed at the
V
DD
-Pin for values ranging from 0 V to 15 V.
Temperature
Dependent
Bias
Hysteresis
Control
Comparator
Output
V
DD
1
OUT
3
Hall Plate
GND
2
Fig. 2: HAL 114 block diagram
HAL 114
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
Dimensions of Sensitive Area
0.4 mm x 0.2 mm
Positions of Sensitive Area
SOT-89A
TO-92UA
x = 0
0.2
x = 0
0.2
y = 0.98
0.2
y = 1.0
0.2
x is referenced to the center of the package
Outline Dimensions
4.55
0.1
2.6
0.1
0.4
0.4
1.7
0.4
1.5
3.0
0.05
0.05
branded side
SPGS7001-6-A/2E
sensitive area
top view
y
1
2
3
2
Fig. 3:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
4
0.2
1.53
0.05
0.125
0.7
sensitive area
0.55
branded side
0.36
0.8
0.3
45
y
14.0
min.
3.1
1.27
1.27
2.54
1
2
3
0.5
0.42
Fig. 4:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
1.5
0.05
4.06
0.1
2.03
3.05
0.1
0.48
SPGS7002-6-A/1E
HAL114
MICRONAS INTERMETALL
4
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
15
28
1)
V
V
P
Test Voltage for Supply
1
24
2)
V
I
DD
Reverse Supply Current
1
50
1)
mA
I
DDZ
Supply Current through
Protection Device
1
200
3)
200
3)
mA
V
O
Output Voltage
3
0.3
28
1)
V
I
O
Continuous Output On Current
3
30
mA
I
Omax
Peak Output On Current
3
250
3)
mA
I
OZ
Output Current through
Protection Device
3
200
3)
200
3)
mA
T
S
Storage Temperature Range
65
150
C
T
J
Junction Temperature Range
40
40
150
170
4)
C
1)
as long as T
J
max
is not exceeded
2)
with a 220
series resistance at pin 1 corresponding to test circuit 1
3)
t < 2 ms
4)
t < 1000h
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
"Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
1
4.5
24
V
I
O
Continuous Output On Current
3
0
20
mA
R
V
Series Resistor
1
270
Electrical Characteristics at T
J
= 40
C to +170
C , V
DD
= 4.5 V to 24 V, as not otherwise specified in Test Conditions
Typical Characteristics for T
J
= 25
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
OL
Output Voltage over
Temperature Range
3
120
400
mV
I
OL
= 12.5 mA
V
OL
Output Voltage over
Temperature Range
3
190
500
mV
I
OL
= 20 mA
I
OH
Output Leakage Current
3
1
A
B < B
off
,
V
OH
= 24 V, T
J
= 25
C
HAL114
MICRONAS INTERMETALL
5
Electrical Characteristics, continued
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
I
OH
Output Leakage Current over
Temperature Range
3
10
A
B < B
off
V
OH
= 24 V, T
J
< 150
C
I
DD
Supply Current
1
6
8.2
11
mA
T
J
= 25
C
I
DD
Supply Current over
Temperature Range
1
3.9
8.2
12
mA
t
en(O)
Enable Time of Output
after Setting of V
DD
3
6
10
s
V
DD
= 12 V
t
r
Output Rise Time
3
85
400
ns
V
DD
= 12 V, RL = 820 Ohm,
CL = 20 pF
t
f
Output Fall Time
3
60
400
ns
V
DD
= 12 V, RL = 820 Ohm,
CL = 20 pF
R
thJSB
case
SOT-89A
Thermal Resistance Junction to
Substrate Backside
150
200
K/W
Fiberglass Substrate
pad size see Fig. 6
R
thJA
case
TO-92UA
Thermal Resistance
Junction to Soldering Point
150
200
K/W
Leads at ambient tempera-
ture at a distance of 2 mm
from case
Magnetic Characteristics at T
J
= 40
C to +170
C, V
DD
= 4.5 V to 24 V,
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
40
C
25
C
100
C
170
C
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
On point B
ON
7.5
21.5
36.0
7.0
21.3
34.0
6.3
19.6
31.5
6.0
19.2
31.0
mT
Off point B
OFF
4.3
17.4
33.2
4.0
17.6
31.2
3.6
16.1
28.9
3.6
15.8
28.8
mT
Hysteresis B
HYS
2.8
4.1
5.0
2.8
3.7
4.5
2.6
3.5
4.0
2.2
3.4
4.0
mT
B
OFF min
B
ON max
B
HYS
Output Voltage
Fig. 5: Definition of switching points and hysteresis
B
OFF
B
ON
0
Fig. 6: Recommended pad size SOT-89A
Dimensions in mm
5.0
2.0
2.0
1.0
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