HAL114, HAL115
Hall Effect Sensor Family
Edition Dec. 20, 1999
6251-456-2DS
MICRONAS
MICRONAS
HAL11x
2
Micronas
Contents
Page
Section
Title
3
1.
Introduction
3
1.1.
Features
3
1.2.
Family Overview
3
1.3.
Marking Code
4
1.4.
Operating Junction Temperature Range
4
1.5.
Hall Sensor Package Codes
4
1.6.
Solderability
4
2.
Functional Description
5
3.
Specifications
5
3.1.
Outline Dimensions
5
3.2.
Dimensions of Sensitive Area
5
3.3.
Positions of Sensitive Areas
6
3.4.
Absolute Maximum Ratings
6
3.5.
Recommended Operating Conditions
7
3.6.
Electrical Characteristics
8
3.7.
Magnetic Characteristics
10
4.
Type Descriptions
10
4.1.
HAL 114
12
4.2.
HAL 115
14
5.
Application Notes
14
5.1.
Application Circuit
14
5.2.
Ambient Temperature
14
5.3.
Extended Operating Conditions
14
5.4.
Start-up Behavior
16
6.
Data Sheet History
HAL11x
3
Micronas
Hall Effect Sensor Family
in CMOS technology
Release Notes: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 11x family consists of different Hall switches
produced in CMOS technology.
All sensors include a temperature-compensated Hall
plate, a comparator, and an open-drain output transistor.
The comparator compares the actual magnetic flux
through the Hall plate (Hall voltage) with the fixed refer-
ence values (switching points). Accordingly, the output
transistor is switched on or off. The sensors of this family
differ in the switching behavior.
The sensors are designed for industrial and automotive
applications and operate with supply voltages from
4.5 V to 24 V in the ambient temperature range from
40
C up to 125
C.
All sensors are available in an SMD-package (SOT-89B)
and in a leaded version (TO-92UA).
1.1. Features
operates from 4.5 V to 24 V supply voltage
overvoltage protection
reverse-voltage protection at V
DD
-pin
short-circuit protected open-drain output by thermal
shut down
operates with static magnetic fields and dynamic mag-
netic fields up to 20 kHz
stable switching points over a wide supply voltage
range
the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic characteristics
1.2. Family Overview
The types differ according to the mode of switching.
Type
Switching Behavior
see Page
HAL 114
unipolar
10
HAL 115
bipolar
12
Bipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
Unipolar Switching Sensors:
The output turns low with the magnetic south pole on the
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
1.3. Marking Code
All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
Temperature Range
K
E
C
HAL 114
114K
114E
114C
HAL 115
115K
115E
115C
HAL11x
4
Micronas
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature T
J
).
K: T
J
= 40
C to +140
C
E: T
J
= 40
C to +100
C
C: T
J
= 0
C to +100
C
The relationship between ambient temperature (T
A
) and
junction temperature is explained in section 5.2. on page
14.
1.5. Hall Sensor Package Codes
Type: 11x
HAL XXXPA-T
Temperature Range: K, E, or C
Package: SF for SOT-89B
UA for TO-92UA
(SO for SOT-89A)
Type: 114
Package: TO-92UA
Temperature Range: T
J
= 40
C to +100
C
Example: HAL 114UA-E
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: "Ordering Codes for Hall
Sensors".
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260
C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40
C and 90% relative humidity.
OUT
GND
3
2
1
V
DD
Fig. 11: Pin configuration
2. Functional Description
The HAL 11x sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Shunt protection devices clamp voltage peaks at the
Output-pin and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by an
internal series resistor up to 15 V. No external reverse
protection diode is needed at the V
DD
-pin for reverse
voltages ranging from 0 V to 15 V.
Temperature
Dependent
Bias
Hysteresis
Control
Comparator
Output
V
DD
1
OUT
3
Hall Plate
GND
2
Fig. 21: HAL 11x block diagram
HAL 11x
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
HAL11x
5
Micronas
3. Specifications
3.1. Outline Dimensions
Fig. 31:
Plastic Small Outline Transistor Package
(SOT-89A)
Weight approximately 0.04 g
Dimensions in mm
min.
0.25
4.55
0.1
2.6
0.1
0.4
0.4
1.7
0.4
1.5
3.0
0.06
0.04
branded side
SPGS7001-7-A3/2E
sensitive area
top view
y
1
2
3
2
4
0.2
1.53
0.05
0.125
0.7
x1
x2
Note: The SOT-89A package will be discontinued in
2000 and be replaced by the SOT-89B package.
Fig. 32:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
min.
0.25
2.55
0.1
0.4
0.4
0.4
1.5
3.0
0.06
0.04
branded side
SPGS0022-3-A3/2E
sensitive area
top view
y
1
2
3
4
0.2
1.15
0.05
0.125
0.3
4.55
0.1
1.7
2
x1
x2
0.75
0.2
Fig. 33:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
sensitive area
0.55
branded side
0.36
0.8
0.3
45
y
14.0
min.
1.27
1.27
(2.54)
1
2
3
0.42
1.5
0.05
4.06
0.1
3.05
0.1
0.48
SPGS7002-7-A/2E
3.1
0.2
x2
x1
Note: For all package diagrams, a mechanical tolerance
of
50
m applies to all dimensions where no tolerance
is explicitly given.
3.2. Dimensions of Sensitive Area
0.4 mm x 0.2 mm
3.3. Positions of Sensitive Areas
SOT-89A
SOT-89B
TO-92UA
|x
2
x
1
| / 2 < 0.2 mm
y = 0.98 mm
0.2 mm
y = 0.95 mm
0.2 mm
y = 1.0 mm
0.2 mm
HAL11x
6
Micronas
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
15
28
1)
V
V
P
Test Voltage for Supply
1
24
2)
V
I
DD
Reverse Supply Current
1
50
1)
mA
I
DDZ,
I
OZ
Current through Protection Devices
1 or 3
200
3)
200
3)
mA
V
O
Output Voltage
3
0.3
28
1)
V
I
O
Continuous Output On Current
3
30
1)
mA
I
Omax
Peak Output On Current
3
250
3)
mA
T
S
Storage Temperature Range
65
150
C
T
J
Junction Temperature Range
40
150
C
1)
as long as T
J
max
is not exceeded
2)
with a 220
series resistor at pin 1
3)
t < 2 ms
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
"Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
4.5
24
V
I
O
Continuous Output On Current
3
0
20
mA
V
O
Output Voltage
(output switched off)
3
0
24
V
R
V
Series Resistor
1)
1
270
1)
see Fig. 51 on page 14
HAL11x
7
Micronas
3.6. Electrical Characteristics at T
J
= 40
C to +140
C , V
DD
= 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
6
8.2
11
mA
T
J
= 25
C
I
DD
Supply Current over
Temperature Range
1
3.9
8.2
12
mA
V
OL
Output Voltage over
Temperature Range
3
120
400
mV
I
OL
= 12.5 mA
V
OL
Output Voltage over
Temperature Range
3
190
500
mV
I
OL
= 20 mA
I
OH
Output Leakage Current
3
0.06
1
A
B < B
off
,
T
J
= 25
C, V
OH
= 0 to 24 V
I
OH
Output Leakage Current over
Temperature Range
3
10
A
B < B
off
,
V
OH
= 0 to 24 V
t
en(O)
Enable Time of Output after
Setting of V
DD
1
6
10
s
V
DD
= 12 V
B > B
ON
+ 2 mT or
B < B
OFF
2 mT
t
r
Output Rise Time
3
0.08
0.4
s
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
t
f
Output Fall Time
3
0.06
0.4
s
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
R
thJSB
case
SOT-89A
SOT-89B
Thermal Resistance Junction
to Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 34
R
thJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
150
200
K/W
Fig. 34: Recommended pad size SOT-89x
Dimensions in mm
5.0
2.0
2.0
1.0
HAL11x
8
Micronas
3.7. Magnetic Characteristics at T
J
= 40
C to +140
C, V
DD
= 4.5 V to 24 V,
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Parameter
On point B
ON
Off point B
OFF
Hysteresis B
HYS
Unit
Switching type
T
J
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
HAL 114
40
C
7.5
21.5
36
4.3
17.4
33.2
2.8
4.1
5
mT
unipolar
25
C
7
21.1
34
4
17.1
31.2
2.8
4
4.5
mT
140
C
6.1
19.4
31.3
3.6
16.1
28.8
2.2
3.3
4
mT
HAL 115
40
C
10.7
1.4
12.5
12.5
1.4
10.7
1.8
2.8
7
mT
bipolar
25
C
10.7
1.2
12.5
12.5
1.2
10.7
1.8
2.4
7
mT
140
C
10.7
0.9
12.5
12.5
0.9
10.7
1
1.8
7
mT
Note: For detailed descriptions of the individual types, see pages 10 and following.
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
15
10
5
0
5
10
15
15 10 5
0
5
10 15 20 25 30 V
mA
V
DD
I
DD
Fig. 35: Typical supply current
versus supply voltage
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
HAL 11x
0
2
4
6
8
10
12
0
1
2
3
4
5
6 V
mA
V
DD
I
DD
Fig. 36: Typical supply current
versus supply voltage
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
HAL 11x
HAL11x
9
Micronas
0
2
4
6
8
10
12
50
0
50
100
150
C
mA
T
A
I
netic fields up to 20 kHz
Applications
The HAL 114 is the optimal sensor for applications with
one magnetic polarity such as:
solid state switches,
contactless solution to replace micro switches,
position and end-point detection, and
rotating speed measurement.
B
HYS
Output Voltage
Fig. 41: Definition of magnetic switching points for
the HAL 114
0
B
OFF
B
ON
V
OL
V
O
B
Magnetic Characteristics at T
J
= 40
C to +140
C, V
DD
= 4.5 V to 24 V,
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point B
ON
Off point B
OFF
Hysteresis B
HYS
Unit
T
J
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40
I
2
S
SL/SR
L/(Sub)/R or
L/C/R or C/C
Lt/Rt or Lo/Ro
SCART
SCART
(TV+Stereo)
I
2
S
I
2
S
SCART
1...6 ch
1...8 ch
8 ch
8 ch
2 ch
1...8 ch
IF
PCM/Dolby Digital
MPEG via I2S Serial
PRELIMINARY DATA SHEET
MAS 3528E
Micronas
7
1.3. Application Details
Fig. 13: Block diagram of a MAS 3528E in a
television environment with all D/A-converters shown.
PCM
MPEG
AC-3
Noise
Gen.
Input
Buffer
Deemphas
is
SID*
SII*
SIC*
SID
SII
SIC
Amp./
Osc.
PLL
Synth.
CLKO
Pos
t
Pro
c
ess
i
ng
Delay
L
i
nes
M
u
lt
ipl.
C/
Sub
Ls
Rs
L
R
Lt
Rt
SOD3
SOD2
SOD1
SOD
HAL114, HAL115
Hall Effect Sensor Family
Edition Dec. 20, 1999
6251-456-2DS
MICRONAS
MICRONAS
HAL11x
2
Micronas
Contents
Page
Section
Title
3
1.
Introduction
3
1.1.
Features
3
1.2.
Family Overview
3
1.3.
Marking Code
4
1.4.
Operating Junction Temperature Range
4
1.5.
Hall Sensor Package Codes
4
1.6.
Solderability
4
2.
Functional Description
5
3.
Specifications
5
3.1.
Outline Dimensions
5
3.2.
Dimensions of Sensitive Area
5
3.3.
Posi>C
7.5
21.5
36
4.3
17.4
33.2
2.8
4.1
5
mT
25
C
7
21.1
34
4
17.1
31.2
2.8
4
4.5
mT
100
C
6.3
19.9
31.5
3.6
16.4
28.9
2.6
3.5
4
mT
140
C
6.1
19.4
31.3
3.6
16.1
28.8
2.2
3.3
4
mT
The hysteresis is the difference between the switching points B
HYS
= B
ON
B
OFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.
HAL114
11
Micronas
0
5
10
15
20
25
30
0
5
10
15
20
25
30
mT
V
DD
V
B
ON
B
OFF
Fig. 42: Typical magnetic switching
points versus supply voltage
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
HAL 114
0
5
10
15
20
25
30
3
4
5
6
mT
V
DD
V
B
ON
B
OFF
Fig. 43: Typical magnetic switching
points versus supply voltage
T
A
= 40
C
T
A
= 25
C
T
A
= 140
C
HAL 114
0
5
10
15
20
25
30
50
0
50
100
150
B
OFF
mT
T
A
B
ON
B
OFF
B
ON
V
DD
= 12 V
C
Fig. 44: Typical magnetic switching
points versus temperature
HAL 114
HAL115
12
Micronas
4.2. HAL 115
The HAL 115 is a bipolar switching sensor (see Fig. 45).
The output turns low with the magnetic south pole on the
branded side of the package and turns high with the
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is
removed again. Some sensors will change the output
state and some sensors will not.
For correct functioning in the application, the sensor re-
quires both magnetic polarities (north and south) on the
branded side of the package.
Magnetic Features:
switching type: bipolar
high sensitivity
typical B
ON
: 1.2 mT at room temperature
typical B
OFF
: 1.2 mT at room temperature
operates with static magnetic fields and dynamic mag-
netic fields up to 20 kHz
Applications
The HAL 115 is the optimal sensor for all applications
with alternating magnetic signals at the sensor position
such as:
rotating speed measurement,
commutation of brushless DC-motors and cooling
fans.
Fig. 45:Definition of magnetic switching points for the
HAL 115
B
HYS
Output Voltage
0
B
OFF
B
ON
V
OL
V
O
B
Magnetic Characteristics at T
J
= 40
C to +140
C, V
DD
= 4.5 V to 24 V,
Typical Characteristics for V
DD
= 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point B
ON
Off point B
OFF
Hysteresis B
HYS
Unit
T
J
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
40
C
10.7
1.4
12.5
12.5
1.4
10.7
1.8
2.8
7
mT
25
C
10.7
1.2
12.5
12.5
1.2
10.7
1.8
2.4
7
mT
100
C
10.7
1
12.5
12.5
1
10.7
1.5
2
7
mT
140
C
10.7
0.9
12.5
12.5
0.9
10.7
1
1.8
7
mT
The hysteresis is the difference between the switching points B
HYS
= B
ON
B
OFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
HAL115
13
Micronas
6
4
2
0
2
4
6
50
0
50
100
150
B
OFF
mT
T
A
B
ON,
B
OFF
C
B
ON
V
DD
= 12 V
HAL 115
Fig. 46:Typical magnetic switching
points versus ambient temperature
HAL11x
14
Micronas
5. Application Notes
5.1. Application Circuit
The HAL 11x sensors can operate without external com-
ponents. For applications with disturbances on the sup-
ply line or radiated disturbances, a series resistor and a
capacitor are recommended (see Fig. 51).
The series resistor and the capacitor should be placed
as closely as possible to the sensor.
OUT
GND
3
2
1
V
DD
4.7 nF
V
DD
R
V
220
R
L
Fig. 51: Recommended application circuit
HAL115
1
2
3
3.3 k
R
1
L
1
R
2
3.3 k
L
2
C
1
C
2
2.2
/50 V
2.2
/50 V
V
DD
Fig. 52: Recommended application circuit
for DC fans
5.2. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient tem-
perature T
A
).
T
J
= T
A
+
T
At static conditions, the following equation is valid:
T = I
DD
* V
DD
* R
th
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
For all sensors, the junction temperature range T
J
is
specified. The maximum ambient temperature T
Amax
can be calculated as:
T
Amax
= T
Jmax
T
5.3. Extended Operating Conditions
All sensors fulfill the electrical and magnetic characteris-
tics when operated within the Recommended Operating
Conditions (see page 6).
Please use the sensors of the HAL 5xx family if lower op-
eration voltage, lower current consumption or tighter
magnetic specifications required.
5.4. Start-up Behavior
The sensors have an initialization time (enable time
t
en(O)
) after applying the supply voltage. This parameter
t
en(O)
is specified in the Electrical Characteristics (see
page 7).
During the initialization time, the output state is not de-
fined and can toggle. After t
en(O)
, the output will be low
if the applied magnetic field B is above B
ON
or high if B
is below B
OFF
.
For magnetic fields between B
OFF
and B
ON
, the output
state of the HAL sensor after applying V
DD
will be either
low or high. In order to achieve a well-defined output
state, the applied magnetic field must be above B
ONmax
,
respectively, below B
OFFmin
.
HAL11x
15
Micronas
HAL11x
16
Micronas
6. Data Sheet History
1. Final data sheet: "HAL114 Unipolar Hall Switch IC",
June 10, 1998, 6251-456-1DS. First release of the final
data sheet.
2. Final data sheet: "HAL115 Hall Effect Sensor IC",
May 7, 1997, 6251-414-1DS. First release of the final
data sheet.
3. Final data sheet: "HAL114, HAL 115 Hall Effect Sen-
sor Family, Dec. 20, 1999, 6251-456-2DS. Second re-
lease of the final data sheet. Major changes:
additional package SOT-89B
temperature range "A" replaced by "K" for HAL114
additional temperature range "K" for HAL115
outline dimensions for SOT-89A and TO-92UA
changed
supply voltage range changed for HAL115
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
by Systemdruck+Verlags-GmbH, Freiburg (12/1999)
Order No. 6251-456-2DS
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
tion form; the same applies to orders based on development samples
delivered. By this publication, Micronas GmbH does not assume re-
sponsibility for patent infringements or other rights of third parties
which may result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on
a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
Micronas
page 1 of 1
Subject:
Data Sheet Concerned:
Supplement:
Edition:
Data Sheet Supplement
Changes:
position tolerance of the sensitive area reduced
tolerances of the outline dimensions reduced
thickness of the leadframe changed to 0.15 mm (old 0.125 mm)
SOT-89A will be discontinued in December 2000
Position of sensitive area
Note: A mechanical tolerance of
0.05 mm applies to all dimensions where no tolerance is explicitly given.
Position tolerance of the sensitive area is defined in the package diagram.
HAL 114, 115
HAL 50x, 51x
HAL 621, 629
HAL 55x, HAL 56x
x
center of the package
center of the package
y
0.95 mm nominal
0.85
mm nominal
min.
0.25
2.55
0.4
0.4
0.4
1.5
3.0
0.06
0.04
branded side
SPGS0022-5-A3/2E
y
1
2
3
4
0.2
0.15
0.3
4.55
1.7
2
0.2
sensitive area
top view
1.15
Improvement of SOT-89B Package
HAL 114, 115, 6251-456-2DS, Dec. 20, 1999
HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999
HAL 55x, 56x, 6251-425-1DS, April 6, 1999
HAL 621, 629, 6251-504-1DS, Feb. 3, 2000
No. 1/ 6251-531-1DSS
July 4, 2000
HAL 11x, HAL 5xx, HAL 62x
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