HAL1500
Programmable Low-Voltage
Edition Aug. 8, 2002
6251-496-1AI
ADVANCE INFORMATION
MICRONAS
Hall Effect Switch
HAL1500
ADVANCE INFORMATION
2
Aug. 8, 2002; 6251-496-1AI
Micronas
Contents
Page
Section
Title
3
1.
Introduction
3
1.1.
Major Applications
3
1.2.
Features
4
1.3.
Marking Code
4
1.3.1.
Special Marking of Prototype Parts
4
1.4.
Operating Junction Temperature Range
4
1.5.
Hall Sensor Package Codes
4
1.6.
Solderability
4
1.7.
Pin Configuration and Short Descriptions
5
2.
Functional Description
5
2.1.
General Function
6
2.2.
Major Programming Characteristics
6
2.2.1.
Single-Level Switch
6
2.2.2.
Multi-Level Switch
6
2.3.
EEPROM
6
2.3.1.
Terminology
6
2.3.2.
EEPROM Cells
8
3.
Specifications
8
3.1.
Outline Dimensions
8
3.2.
Dimension of Sensitive Area
8
3.3.
Positions of Sensitive Areas
9
3.4.
Absolute Maximum Ratings
9
3.4.1.
Storage, Moisture Sensitivity Class, and Shelf Life
9
3.5.
Recommended Operating Conditions
10
3.6.
Electrical Characteristics
11
3.7.
Magnetic Characteristics
12
4.
Programming of the Sensor
12
4.1.
Definition of Programming Pulses
12
4.2.
Definition of the Telegram
14
4.3.
Telegram Codes
15
4.4.
Number Formats
15
4.5.
Register Information
15
4.6.
Programming Information
16
5.
Application Notes
16
5.1.
Application Circuit
16
5.2.
Temperature Compensation
16
5.3.
Ambient Temperature
17
5.4.
Extended Operating Conditions
17
5.5.
Start-up Behavior
17
5.6.
EMC and ESD
18
6.
Data Sheet History
ADVANCE INFORMATION
HAL1500
Micronas
Aug. 8, 2002; 6251-496-1AI
3
Programmable Low-Voltage Hall Effect Switch in
CMOS Technology
1. Introduction
The HAL1500 is a programmable Hall switch designed
and produced in an automotive submicron CMOS
technology and can be used for position detection and
rotating speed measurement.
The sensor includes a temperature-compensated Hall
plate with active offset compensation, a comparator,
an open-drain output transistor, an EEPROM memory
with lock function for the calibration data, a serial inter-
face for programming the EEPROM, and protection
devices at all pins.
The comparator compares the actual magnetic flux
through the Hall plate (Hall voltage) with the pro-
grammed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
The major magnetic characteristics like switching
points, temperature coefficient of switching points, and
output switching polarity are programmable in a non-
volatile memory.
The HAL1500 is programmable by modulating the volt-
age at the output pin of the sensor. No additional pro-
gramming pin is needed.
An individual adjustment of each sensor during the
customers manufacturing process is possible. With
this calibration procedure, the tolerances of the sen-
sor, the magnet and the mechanical positioning can be
compensated in the final assembly.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas. The HAL1500 eases logistic because its
characteristics can be programmed within a wide
range. Therefore, one Hall IC type can be used for var-
ious applications.
The sensor is designed for hostile industrial and auto-
motive applications and operates with supply voltages
from 3.5 V to 18 V in ambient temperature range from
-
40 C up to 150 C.
All sensors are available in a SMD-package
(SOT-89B) and in a leaded version (TO-92UA).
1.1. Major Applications
Due to the sensor's versatile programming character-
istics, the HAL1500 is the optimal system solution for
applications such as:
applications with large air gap or weak magnets,
rotating speed measurements,
camshaft sensors,
solid state switches,
contactless solution for replacing microswitches,
position and end-point detection, and
multi-pole magnet applications.
1.2. Features
high-precision programmable Hall effect sensor with
open-drain output
programmable via output pin
choppered offset compensation at typ. 125 kHz
operates from 3.5 V to 18 V supply voltage
operates from
-
40 C to 150 C ambient tempera-
ture
operates with magnetic fields from DC to 10 kHz
programmable as a single-level switch or a multi-
level switch with 4-bit resolution and PWM (Pulse
Width Modulated) output signal
programmable magnetic switching points (single-
level switch) or programmable magnetic range and
reference level (multi-level switch)
programmable temperature coefficient of magnetic
switching points or of range and reference level
lock function and redundancy for EEPROM memory
on-chip temperature compensation circuitry mini-
mizes shifts over temperature and supply voltage
over-voltage protection and reverse-voltage protec-
tion of V
DD
-Pin
short-circuit protected open-drain output by thermal
shut down
magnetic characteristics extremely robust against
mechanical stress
EMC-optimized design
HAL1500
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1.3. Marking Code
The HAL1500 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins, but are not
intended to be used for qualification tests or as produc-
tion parts.
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
J
).
A: T
J
=
-
40
C to +170
C
K: T
J
=
-
40
C to +140
C
Note: Due to high power dissipation at high current
consumption, there is a difference between the
ambient temperature (T
A
) and junction tempera-
ture (see Section 5.3. on page 16).
1.5. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: "Ordering Codes for
Hall Sensors".
1.6. Solderability
All packages: according to IEC68-2-58.
During soldering, reflow processing, and manual
reworking, a component body temperature of 260 C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the data code printed on the labels, even in environ-
ments as extreme as 40 C and 90% relative humidity.
1.7. Pin Configuration and Short Descriptions
Fig. 11: Pin configuration
Type
Temperature Range
A
K
HAL1500
1500A
1500K
HALXXXPA-T
Temperature Range: A or K
Package: SF for SOT-89B
UA for TO-92UA
Type: 1500
Example: HAL1500SF-A
Type: 1500
Package: SOT-89B
Temperature Range: T
J
=
-
40
C to +170
C
Pin
No.
Pin Name
Type
Short Description
1
V
DD
IN
Supply Voltage Pin
2
GND
Ground
3
OUT
IN
OUT
Open-Drain Output
and Programming
Pin
1 V
DD
2
GND
3
OUT
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HAL1500
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Aug. 8, 2002; 6251-496-1AI
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2. Functional Description
The HAL1500 is a programmable switch and allows
the programming of single- or multi-level switching,
magnetic switching points, temperature coefficient of
magnetic switching points, and output switching polar-
ity.
2.1. General Function
This Hall effect sensor is a monolithic integrated circuit
that responses to magnetic fields. If a magnetic field
with flux lines perpendicular to the sensitive area is
applied to the sensor, the biased Hall plate forces a
Hall voltage proportional to this field.
The Hall voltage is compared with the actual threshold
level in the comparator. The predetermined tempera-
ture-dependent bias increases the supply voltage of
the Hall plate and adjusts the switching points to the
decreasing induction of magnets at higher tempera-
tures.
Magnetic offset caused by mechanical stress is com-
pensated for by using the "switching offset compensa-
tion technique". Therefore, an internal oscillator pro-
vides a two-phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
threshold. Subsequently, the comparator switches to
the appropriate state.
The time from crossing the magnetic switch level to
switching of the output can vary between zero and 1/
f
OSC
.
On-chip EEPROM cells allow the programming of the
magnetic switching points for calibration in the system
environment. Electrical programming is provided with
an voltage modulation sequence at the output.
Shunt protection devices clamp voltage peaks at the
Out-pin and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by
an internal series resistor up to
-
15V. No external
reverse-protection diode is needed at the V
DD
-pin for
values ranging from 0 V to
-
15 V
Single-Level Switch Output Mode
When the magnetic field exceeds the threshold level,
the comparator switches to the appropriate state to
control the MOSFET (open-drain) output. The built-in
hysteresis eliminates oscillation and maintains a
switching behavior of the output without bouncing.
Multi-Level Switch Output Mode
An internal counter increases the switching level.
When the counter reaches the level of the external
magnetic field, the comparator switches and the sen-
sor provides a PWM-coded output signal. After that the
counter begins a new cycle.
Fig. 21: HAL1500 block diagram
Temperature-
dependent
Bias
Protection
Devices
Switched
Hall Plate
Switching
Control
Comparator
Output
Control
Output
Programming
Interface
EEPROM Memory
Lock Control
Out
V
DD
V
SS
Oscillator
Internally
stabilized
Supply and
Protection
Device
HAL1500
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2.2. Major Programming Characteristics
The description of the output characteristic of the sen-
sor must be distinguished between a sensor pro-
grammed as a single-level switch or as a multi-level
switch.
2.2.1. Single-Level Switch
magnetic hysteresis from 1 mT to 32 mT in steps of
1 mT
magnetic offset from
-
31.5 mT to 31.5 mT in steps
of 0.5 mT
for normal switching characteristics (magnetic south
pole at the branded side of package), the magnetic
switching points can be calculated as follows:
B
ON
= B
OFFSET
+ 1/2 B
HYS
B
OFF
= B
OFFSET
- 1/2 B
HYS
temperature behavior of magnetic switching points
normal or inverted output switching mode
2.2.2. Multi-Level Switch
magnetic range 8 mT and 16 mT with 4-bit resolu-
tion
magnetic reference level from
-
31.5 mT to 31.5 mT
in steps of 0.5 mT
temperature behavior of magnetic sensitivity
normal or inverted output switching
Fig. 22: Multi-level switching behavior
2.3. EEPROM
The EEPROM consists of two parts:
Part 1 contains the registers for: OUTPUT_TYPE,
HYSTERESIS (RANGE), OFFSET (REFERENCE-
LEVEL), TC and OUTPUTPOLARITY. These regis-
ters are programmable by the customer.
Part 2 contains the Micronas registers. These regis-
ters are programmed and locked during Micronas
production. The registers are used for oscillator fre-
quency trimming and several other special charac-
teristics.
2.3.1. Terminology
HYSTERESIS: name of the register or register value
Hysteresis: name of the parameter
2.3.2. EEPROM Cells
Single-Level Switch, Multi-Level Switch
The OUTPUT_TYPE bit determines whether the sen-
sor acts as a single- or multi-level switch.
B
distance/angle
min.
max.
ref. B
range
step=1 LSB
position
Table 21: OUTPUT_TYPE bit
OUTPUT_TYPE
Application
0
Single-level switch
1
Multi-level switch
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Magnetic Hysteresis, Magnetic Range
The HYSTERESIS bits determine the magnetic
switching hysteresis of the sensor. The HYSTERESIS
range is from 0 (1 mT) to 31 (32 mT). If the sensor is
programmed as a multi-level switch (OUTPUT_TYPE
set to 1), the RANGE bits determine the range of the
multi-level switch. The possible ranges are 0 (8 mT)
and 1 (16 mT). The higher bits are not used when the
sensor is programmed as a multi-level switch.
Magnetic Offset, Magnetic Reference Level
The OFFSET bits determine the magnetic offset of the
sensor. The OFFSET register range is from
-
63
(
-
31.5 mT) to 63 (31.5 mT). If OUTPUT_TYPE is set
to 1, the REFERENCE-LEVEL bits determine the ref-
erence level of the multi-level switch. The range is
from
-
31.5 mT to 31.5 mT.
Temperature Coefficient of Magnetic Switching
Points
The TC bits determine the temperature coefficient of
the magnetic switching points. The TC range is from 0
(
-
2280 ppm/K) to 31 (1360 ppm/K) in approximately
+110 ppm/K steps.
Output Switching Polarity
The OUTPUTPOLARITY bit determines the polarity of
the output switching behavior.
Table 22: HYSTERESIS bits
No of Bits
Magnetic Hysteresis Range
(OUTPUT_TYPE = 0)
5
1 mT...32 mT
No of Bits
Magnetic Range
(OUTPUT_TYPE =1)
1 LSB
8 mT, 16 mT
Table 23: OFFSET bits
No of Bits
Magnetic Offset Range
(OUTPUT_TYPE = 0)
Magnetic Reference level
(OUTPUT_TYPE = 1)
7
-
31.5 mT...31.5 mT
Table 24: TC bits
No of Bits
Temperature Coefficient
Range of Magnetic Switching
Points
5
1360 ppm/K...
-
2280 ppm/K
Table 25: OUTPUTPOLARITY bit
OUTPUT-
POLARITY
Output Switching Polarity
0
B
ON
> B
OFF,
normal mode
1
B
OFF
> B
ON,
inverted mode
HAL1500
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3. Specifications
3.1. Outline Dimensions
Fig. 31:
Plastic Small Outline Transistor Package
(SOT89B)
Weight approximately 0.4 g
Dimensions in mm
Fig. 32:
Plastic Transistor Single Outline Package
(TO-92UA)
Weight approximately 0.12 g
Dimensions in mm
3.2. Dimension of Sensitive Area
0.25 mm
0.12 mm
3.3. Positions of Sensitive Areas
Note: For all package diagrams, a mechanical toler-
ance of 0.05 mm applies to all dimensions
where no tolerance is explicitly given. All pack-
age dimensions exclude molding flash.
4.55
1.7
min.
0.25
2.55
0.4
0.4
0.4
1.5
3.0
0.06
0.04
branded side
SPGS0022-5-A3/2E
y
1
2
3
4
0.2
0.15
0.3
2
0.2
sensitive area
top view
1.15
SPGS007002-10-A/3E
branded side
SOT-89B
TO-92UA
x
center of the
package
center of the
package
y
0.95 mm nominal
1 mm nominal
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3.4. Absolute Maximum Ratings
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
3.4.1. Storage, Moisture Sensitivity Class, and Shelf Life
Storage has no influence on the electrical and magnetic characteristics of the sensors. However, under disadvanta-
geous conditions, extended storage time can lead to alteration of the lead plating, which affects the soldering pro-
cess.
Moisture Sensitivity Class:
The target for the package SOT-89B is level 1 according to J-STD-020A "Moisture/Reflow Sensitivity Classification
for Non-hermetic Solid State Surface Mount Devices". If the sensors are stored at maximum 30 C and maximum
90% relative humidity, no Dry Pack is required.
The permissible storage time (shelf life) of the sensors would be minimum 12 month, beginning from the date of
manufacturing (see section 4.1), if they are stored in the original packaging at maximum 40 C ambient temperature
and maximum 90% relative humidity.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
-
15
26.5
1)
V
V
O
Output Voltage
3
-
0.3
26.5
1)
V
I
O
Continuous Output On Current
3
-
30
mA
T
J
Junction Temperature Range
-
40
170
C
1)
t < 5 min
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
1
3.5
-
18
V
I
O
Continous Output On Current
3
0
-
20
mA
V
O
Output Voltage (output switched off)
3
0
-
18
V
HAL1500
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3.6. Electrical Characteristics
at T
J
=
-
40 C to +170 C, V
DD
= 3.5 V to 18 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25 C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply current
1
2.0
3.2
5.0
mA
T
J
= 25 C
I
DD
Supply current over
Temperature Range
1
1.6
3.2
6
mA
V
DDZ
Overvoltage Protection at Supply
1
-
29
32
V
I
DD
= 25 mA, T
J
= 25 C,
t = 20 ms
V
OZ
Overvoltage Protection at Output
3
-
29
32
I
OH
= 25 mA, T
J
= 25 C,
t = 20 ms
Output switched off
V
OL
Output Voltage
3
-
130
240
mV
I
OL
= 20 mA, T
J
= 25 C,
V
DD
= 3.5 V to 18 V
V
OL
Output Voltage over
Temperature Range
3
-
130
400
mV
I
OL
= 20 mA
I
OH
Output Leakage Current
3
-
-
10
A
Output switched off,
T
J
150 C,
V
OH
= 3.5 V to 18 V
f
OSC
Internal Oscillator Chopper
Frequency
-
-
128
-
kHz
T
J
= 25 C,
V
DD
= 3.5 V to 18 V
f
OSC
Internal Oscillator Chopper
Frequency over Temperature
Range
-
-
128
-
kHz
t
en(O)
Enable Time of Output after
V
DD
Setting
1
-
50
-
s
V
DD
= 12 V
1)
t
r
Output Rise Time
3
-
75
400
ns
V
DD
= 12 V, R
L
= 820
,
C
L
= 20 pF
t
f
Output Fall Time
3
-
50
400
ns
V
DD
= 12 V, R
L
= 820
,
C
L
= 20 pF
f
PWM
PWM frequency
3
-
125
-
Hz
R
thJSB
case
SOT-89B
Thermal Resistance Junction to
Substrate Backside
-
-
150
200
K/W
Fiberglass Substrate
30 mm
10 mm
1.5 mm,
pad size see Fig. 33
R
thJA
case
TO-92UA
Thermal Resistance Junction to
Soldering Point
-
-
150
200
K/W
1)
B > B
ON
+ 2mT or B < B
OFF
-
2 mT for normal output, B > B
OFF
+ 2 mT or B < B
ON
-
2 mT for inverted output
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3.7. Magnetic Characteristics
at T
J
=
-
40 C to +170 C, V
DD
= 3.5 V to 18 V. Typical Characteristics for T
J
= 25 C and V
DD
= 12 V.
Fig. 33: Recommended pad size SOT-89B
Dimensions in mm
Symbol
Parameter
Min.
Typ.
Max.
Unit
Conditions
B
HYS
magnetic hysteresis
-
1
-
mT
HYSTERESIS = 0
B
HYS
magnetic hysteresis
-
32
-
mT
HYSTERESIS = 31
LSB value of magnetic hysteresis
-
1
-
mT
B
OFFSET
magnetic offset
-
-
31.5
-
mT
OFFSET =
-
63
B
OFFSET
magnetic offset
-
31.5
-
mT
OFFSET = 63
LSB value of magnetic offset
-
0.5
-
mT
LSB value of temperature
coefficient of magnetic switching
point
-
-
110
-
ppm/K
5.0
2.0
2.0
1.0
HAL1500
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4. Programming of the Sensor
4.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial tele-
gram (V
CON
) on the output pin. The sensor answers
with a serial telegram (V
SENS
) on the output pin.
A logical "0" is coded as no voltage change within the
bit time. A logical "1" is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
4.2. Definition of the Telegram
Each telegram starts with the Sync bit (logical 0), 4 bits
for the Command (COM), and the Command Parity bit
(CP).
There are three kinds of telegrams:
Write the sensor (see Fig. 42)
After the CP bit, follow 20 Data bits (DAT). If the
telegram is valid and the command has been pro-
cessed, the sensor answers with an Acknowledge
bit (logical 0) on the output.
Read the sensor (see Fig. 43)
After evaluating this command, the sensor answers
with 20 Data bits on the output.
Programming the EEPROM cells (see Fig. 44)
After evaluating this command, the sensor answers
with the Acknowledge bit. After the delay time t
w
,
the output voltage is low for the next 100 ms. After
that the next positive edge will end the program-
ming.
Fig. 41: Definition of logical 0 and 1 bit
t
r
t
f
t
p0
t
p0
logical 0
V
OUTH
V
OUTL
or
t
p0
logical 1
V
OUTH
V
OUTL
or
t
p0
t
p1
t
p1
Table 41: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
Remarks
V
OUTL
Output Voltage for Low Level
during Programming
3
0
-
0.2
V
V
OUTH
Output Voltage for High Level
during Programming
3
4.8
-
5
V
t
r
Rise Time
1
-
-
0.05
ms
t
f
Fall Time
1
-
-
0.05
ms
t
p0
Bit Time on V
OUT
1
0.6
1
1.4
ms
t
p0
is defined by the Sync bit
t
p1
Voltage Change for logical 1
3
50
65
80
%
% of t
p0
or t
pOUT
V
DDPROG
Supply Voltage during
Programming the EEPROM
1
4.75
5
5.25
V
t
PROG
Programming Time for
EEPROM
1
95
100
105
ms
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Fig. 42: Telegram for coding a WRITE command
Fig. 43: Telegram for coding a READ command
Fig. 44: Telegram for coding a ERASE, PROM, or LOCK command
V
CONT
Sync
COM
V
SENS
CP
DAT
Acknowledge
WRITE
V
CONT
V
SENS
DAT
Sync
COM
CP
READ
V
SENS
100 ms
Acknowledge
ERASE, PROM, LOCK, and LOCKI
V
CONT
Sync
COM
CP
HAL1500
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4.3. Telegram Codes
Sync Bit
Each telegram starts with the Sync bit. This logical "0"
pulse defines the exact timing for t
p0
.
Command Bits (COM)
The Command code contains 4 bits and is a binary
number. Table 42 shows the available commands and
the corresponding codes for the HAL 1500.
Command Parity Bit (CP)
This parity bit is "1" if the number of zeros within the
four Command bits is odd. The parity bit is "0", if the
number of zeros is even.
Data Bits (DAT)
The 20 Data bits contain the register information.
Acknowledge
After each telegram, the output answers with the
Acknowledge signal. This logical "0" pulse defines the
exact timing for t
pOUT
(not for the READ command).
Table 42: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
d
program all nonvolatile registers (except the lock bits)
ERASE
8
erase all nonvolatile registers (except the lock bits)
WROUTEN
f
write a register and enable output
LOCK
e
lock the whole device and switch permanently to the analog-mode
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4.4. Number Formats
Binary Number
The most significant bit is given as first, the least sig-
nificant bit as last digit.
Example:
101001
represents 41 decimal.
4.5. Register Information
HYSTERESIS
The register range is from 0 up to 31.
The register value is calculated by:
OFFSET
The register range is from
-
63 up to 63.
The register value is calculated by:
TC
The TC register range is from 0
up to 31.
Please refer to Section 5.2. on page 16 for the recom-
mended values.
4.6. Programming Information
If the content of the EEPROM (except the lock cell) is
to be changed, the desired value must first be written
into the corresponding RAM. Before reading out the
RAM again, the value must be permanently stored in
the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. ERASE and PROM act
on all EEPROM cells in parallel.
The number of programming or erase cycles is limited
to 100.
B
HYST_MAX
= 0.98 mT + 0.98 mT * 31
B
OFFS_MAX
= 0.49 mT * 63
Table 43: Available programmable parameters
Parameter
Data
Bits
Format
Customer
Remark
HYSTERESIS
5
binary
read/write/program
magnetic hysteresis
OFFSET
7
binary
read/write/program
magnetic offset
TC
5
binary
read/write/program
temperature coefficient of magnetic
hysteresis and offset
OUTPUT_TYPE
1
binary
read/write/program
OUTPOLARITY
1
binary
read/write/program
sets B
off
> B
on
HAL1500
ADVANCE INFORMATION
16
Aug. 8, 2002; 6251-496-1AI
Micronas
5. Application Notes
5.1. Application Circuit
For EMC protection, it is recommended to connect one
ceramic 4.7-nF capacitor each between ground and
the supply voltage, respectively the output pin. It is
also recommended to use a series resistor of 220
in
the V
DD
line of the sensor. In addition, the input of the
controller unit should be pulled-up with a 1.2-k
resis-
tor. You should also use a 4.7-nF capacitor between
the input of the controller and GND.
5.2. Temperature Compensation
The relationship between the temperature coefficient
of the magnet and the corresponding TC code for com-
pensation is given in Table 51.
5.3. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient
temperature T
A
).
T
J
= T
A
+
T
At static conditions, the following equation is valid:
T= I
DD
* V
DD
* R
th
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I
DD
and R
th
, and the max. value for V
DD
from the appli-
cation.
For V
DD
= 5 V, R
th
= 200 K/W and I
DD
= 3.2 mA the
temperature difference is
T =3.2 K.
For all sensors, the junction temperature T
J
is speci-
fied. The maximum ambient temperature T
Amax
can be
calculated as:
T
Amax
= T
Jmax
-
T
Table 51: TC codes
Temperature Coefficient of Magnet
(ppm/K)
TC
1360
31
1250
30
1140
29
1030
28
910
27
800
26
690
25
580
24
470
23
350
22
230
21
120
20
10
19
-
110
18
-
220
17
-
350
16
-
460
15
-
580
14
-
690
13
-
810
12
-
930
11
-
1050
10
-
1170
9
-
1290
8
-
1420
7
-
1530
6
-
1660
5
-
1790
4
-
1910
3
-
2030
2
-
2160
1
-
2280
0
ADVANCE INFORMATION
HAL1500
Micronas
Aug. 8, 2002; 6251-496-1AI
17
5.4. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see Section 3.5. on page 8).
Supply Voltage Below 3.5 V
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.5 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.5 V has
not been tested. For special test conditions,
please contact Micronas.
5.5. Start-up Behavior
Due to the active offset compensation, the sensors
have an initialization time (enable time t
en(0)
)
after
applying the supply voltage. The parameter t
en(0)
is
specified in the Electrical Characteristics (see
Section 3.6. on page 9)
.
During the initialization time, the output state is not
defined and the output can toggle. After t
en(0)
, the out-
put will be in switching state defined by the applied
magnetic filed and the programmed magnetic charac-
teristics.
When the sensor is programmed as a single level
switch, the output state will be not defined for magnetic
fields between B
ON
and B
OFF
. In order to achieve a
well-defined output state, the applied magnetic field
must be above B
ONmax
, respectively, below B
OFFmin
.
5.6. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances a series resistor and a capacitor
are recommended (see Fig. 51). The series resistor
and the capacitor should be placed as closely as pos-
sible to the Hall Sensor.
Applications with this arrangement will pass the EMC
tests according to the product standard DIN40839.
Note: The international standard ISO 7637 is similar to
the used product standard DIN 40839.
Fig. 51: Recommended application circuit
V
DD
4.7 nF
GND
HAL1500
1.2 k
4.7 nF
220
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples deliv-
ered. By this publication, Micronas GmbH does not assume responsibil-
ity for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
notify any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.
HAL1500
ADVANCE INFORMATION
18
Aug. 8, 2002; 6251-496-1AI
Micronas
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: docservice@micronas.com
Internet: www.micronas.com
Printed in Germany
Order No. 6251-496-1AI
6. Data Sheet History
1. Advance Information: "HAL1500 Programmable
Low-Voltage Hall Effect Switch", Aug. 8, 2002,
6251-496-1AI. First release of the advance informa-
tion.
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