MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
5 - 21
4N22U
4N23U
6 PIN LCC
OPTOCOUPLERS
4N24U
OPTOELECTRONIC PRODUCTS
DIVISION
05/29/03
Features:
MIL-PRF-19500/486 Qualified
Base lead provided for conventional transistor
biasing
High gain, high voltage transistor
Miniature package saves circuit board area
High voltage electrical isolation...1KV rating
Applications:
Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
Motor control
DESCRIPTION
High gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor in a 6-pin leadless
chip carrier. The 4N22U, 4N23U and 4N24U optocouplers can be supplied to customer specifications as well as JAN, JANS,
JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage....................................................................................................................................................
1000V
Collector-Base Voltage ...........................................................................................................................................................35V
Collector-Emitter Voltage........................................................................................................................................................35V
Emitter-Collector Voltage.......................................................................................................................................................... 4V
Input Diode Reverse Voltage.................................................................................................................................................... 2V
Input Diode Continuous Forward Current at (or below) 65C Free-Air Temperature (see note 1) ....................................40mA
Continuous Collector Current ..............................................................................................................................................50mA
Peak Diode Current .................................................................................................................................................................. 1A
Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ................................300mW
Operating Free-Air Temperature Range ............................................................................................................-55C to +125C
Storage Temperature..........................................................................................................................................-65C to +125C
Solder Temperature (10 seconds)...................................................................................................................................... 240C
Notes:
1. Derate linearly to 125C free-air temperature at the rate of 0.67 mA/C above 65C.
2. Derate linearly to 125C free-air temperature at the rate of 3 mW/C above 65C.
* JEDEC registered data
Package Dimensions Schematic Diagram
PIN 1
IDENTIFIER
2
1
6
5
4
3
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
6
K
A
1
4
B
E
5
C
3
0.080 [2.03]
0.066 [1.68]
0.028 [0.71]
0.022 [0.56]
0.105 [2.67]
0.095 [2.41]
0.070 [1.78]
0.060 [1.52]
0.045 [1.14]
0.055 [1.40]
0.098 [2.49]
0.082 [2.08]
5 PLS
0.175 [4.45]
0.165 [4.19]
0.250 [6.35]
0.240 [6.10]
4N22U, 4N23U, and 4N24U
6
PIN
LCC
OPTOCOUPLERS
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
5 - 21
05/29/03
ELECTRICAL CHARACTERISTICS INPUT LED
T
A
= 25
C Unless otherwise specified
PARAMETER SYMBOL
MIN
MAX
UNITS TEST
CONDITIONS NOTE
Input Diode Static Reverse Current
I
R
100 A
V
R
= 2V
Input Diode Static Forward Voltage -55
C
+25
C
+100
C
V
F
1.0
0.8
0.7
1.5
1.3
1.2
V
I
F
= 10mA
OUTPUT TRANSISTOR
T
A
= 25
C Unless otherwise specified
PARAMETER SYMBOL
MIN
MAX
UNITS TEST
CONDITIONS NOTE
Collector-Base Breakdown Voltage
V
(BR)CBO
35
V
I
C
= 100
A, I
B
= 0, I
F
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
35 V
I
C
= 1mA, I
B
= 0, I
F
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
4 V
I
C
= 0, I
E
= 100
A, I
F
= 0
COUPLED CHARACTERISTICS
T
A
= 25
C Unless otherwise specified
PARAMETER SYMBOL
MIN
MAX
UNITS TEST
CONDITIONS NOTE
On State Collector Current 4N22U
4N23U
4N24U
I
C(ON)
0.15
0.2
0.4
mA V
CE
= 5V, I
B
= 0, I
F
= 2mA
On State Collector Current
4N22U
4N23U
4N24U
I
C(ON)
2.5
6.0
10.0
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
On State Collector Current
4N22U
-55
C
4N23U
4N24U
I
C(ON)
1.0
2.5
4.0
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
On State Collector Current
4N22U
+100
C
4N23U
4N24U
I
C(ON)
1.0
2.5
4.0
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
Off State Collector Current +25
C I
C(OFF)
100 nA
V
CE
= 20V, I
B
= 0, I
F
= 0mA
Off State Collector Current +100
C
I
C(OFF)
100
A V
CE
= 20V, I
B
= 0, I
F
= 0mA
Collector-Emitter Saturation Voltage 4N22U
4N23U
4N24U
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
0.3
0.3
0.3
V
V
V
I
C
= 2.5mA, I
B
= 0, I
F
= 20mA
I
C
= 5mA, I
B
= 0, I
F
= 20mA
I
C
= 10mA, I
B
= 0, I
F
= 20mA
Input to Output Resistance ALL
R
I
-O
10
11
V
IN-OUT
= 1kV
1
Input to Output Capacitance ALL
C
I-O
5
pF
f = 1MHz, V
IN-OUT
= 1kV
1
Rise Time
4N22U
4N23U
4N24U
t
r
t
r
t
r
15
15
20
s
s
s
V
CC
= 10V, I
F
= 10mA, R
L
= 100
Fall Time
4N22U
4N23U
4N24U
t
f
t
f
t
f
15
15
20
s
s
s
V
CC
= 10V, I
F
= 10mA, R
L
= 100
NOTE: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
4N22U Commercial
4N23U Commercial
4N24U Commercial
JAN4N22U JAN
Screened
JAN4N23U JAN
Screened
JAN4N24U JAN
Screened
JANTX4N22U JANTX
Screened
JANTX4N23U JANTX
Screened
JANTX4N24U JANTX
Screened
JANTXV4N22U JANTXV
Screened
JANTXV4N23 JANTXV
Screened
JANTXV4N24U JANTXV
Screened
JANS4N22U JANS
Screened
JANS4N23U JANS
Screened
JANS4N24U JANS
Screened
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