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Электронный компонент: 61048-002

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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 4
61048
SILICON PHOTOTRANSISTOR
(TYPE GS4123)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically
sealed
High
Sensitivity
Base lead provided for conventional transistor
biasing
Wide receiving angle for easy alignment
Spectrally Matched to the 62030 Series LED.
Applications:
Incremental
Encoding
Reflective
Sensors
Position
Sensors
Level
Sensors
DESCRIPTION
This is a N-P-N Planar Silicon phototransistor in a flat window TO-46 three-lead package featuring a large (0.06" X 0.06")
sensitive area. It is available in a range of sensitivities and is ideal for use wherever system considerations dictate the use
of external optics to focus radiation on the sensor. Available custom binned to customer specifications and/or screened to
MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65C to +150C
Operating Temperature (See part selection guide for actual operating temperature)...................................... -65C to +125C
Collector-Emitter Voltage........................................................................................................................................................50V
Emitter-Collector Voltage.......................................................................................................................................................... 7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/C above 25C) ..................................................................................250mW
Lead Soldering Temperature (1/16" from case for 10 seconds)........................................................................................ 240C
Package Dimensions Schematic Diagram
3 LEADS
0.019 [0.48]
0.016 [0.41]
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
0.100 [2.54]
0.100 [2.54]
0.100 [2.54]
45
0.048 [1.22]
0.028 [0.71]
0.046 [1.17]
0.036 [0.91]
0.230 [5.84]
0.209 [5.31]
0.195 [4.95]
0.178 [4.52]
0.210 [5.33]
0.170 [4.32]
0.030 [0.76] MAX
0.500 [12.70]
MIN
EMITTER
BASE
1
2
3
COLLECTOR
B
E
C
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 5
61048
SILICON PHOTOTRANSISTOR (GS4123)
ELECTRICAL CHARACTERISTICS
T
A
= 25C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
Light Current
I
L
5
20
30
50
20
30
50
--
mA
V
CE
= 5.0V, H = 20 mW/cm
2
1
Dark Current
I
D
50
nA
V
CE
= 5V, H = 0
Collector-Emitter Breakdown Voltage
BV
CEO
30
V
I
C
= 100
A
Emitter-Collector Breakdown Voltage
BV
ECO
7
V
I
E
= 100
A
Light Current Rise Time
t
r
8
10
15
20
s
R
L
= 100
, V
CC
= 5V, I
L
= 1.0mA
Saturation Voltage
V
CE (sat)
0.2
V
I
C
= 0.4mA, H = 20 mW/cm
2
Angular Response
10
degrees
2
NOTES:
1.
Irradiance in mW/cm
2
from tungsten source at a color temperature of 2870K.
2.
The angle between incidence for peak response and incidence for 50% of peak response.
RELATIVE SPECTRAL RESPONSE
ANGULAR RESPONSE
BASE
OPEN
H
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
DUT
RL
OUTPUT
Vcc
IL
tr
tf
10%
90%
WAVELENGTH [um]
0.4
0.5
0.6
0.7
0.9
1.0
0.8
0
20
40
60
100
REL
A
TI
VE RESPO
NSE [
%
]
80
1.1
0.3
0.2
1.2
10
30
50
70
90
ANGLE [DEGREES]
-30
-20
-10
0
20
30
10
0
20
40
60
100
R
E
L
A
TI
VE RE
SPO
N
S
E

[
%
]
80
40
-40
-50
50
DARK CURRENT versus TEMPERATURE
V =30 V
CC
M = 0
-25
-50
125
100
75
25
50
0
0.0001
0.001
0.01
0.1
1.0
10
0.00001
CE
O
.
CO
L
L
E
C
T
O
R
DA
RK
CU
RR
E
N
T [
u
A
]
I
T - AMBIENT TEMPERATURE - C
A
COLLECTOR EMITTER CHARACTERISTICS
V
COLLECTOR-EMITTER VOLTAGE [VOLTS]
0
5
10
0
2.0
4.0
6.0
8.0
CE
I
COL
L
EC
TOR
CURR
ENT
[mA
]
C
15
10
20
25
H = 10
35
30
H = 20
H = 50
H = 10
mW
SOURCE TEMP - 2870
TUNGSTEN SOURCE
T = 25C
A
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Bias Voltage-Collector/Emitter
I
F
5
10
mA
Irradiance (H)
H
15
25
mW/cm
2
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
I
L
Range
61048-001
Silicon Phototransistor in TO-46 package, commercial version
5 to 20mA
61048-101
Silicon Phototransistor in TO-46 package (-55
to +100
C) with 100% screening
5 to 20mA
61048-002
Silicon Phototransistor in TO-46 package, commercial version
20 to 30mA
61048-102
Silicon Phototransistor in TO-46 package (-55
to +100
C) with 100% screening
20 to 30mA
61048-003
Silicon Phototransistor in TO-46 package, commercial version
30 to 50mA
61048-103
Silicon Phototransistor in TO-46 package (-55
to +100
C) with 100% screening
30 to 50mA
61048-004
Silicon Phototransistor in TO-46 package, commercial version
+50mA
61048-104
Silicon Phototransistor in TO-46 package (-55
to +100
C) with 100% screening
+50mA