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Электронный компонент: 61058-003

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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
6 - 14
61058
SILICON PHOTOTRANSISTOR
(TYPE GS4021)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
Hermetically
sealed
High
sensitivity
Base lead provided for conventional transistor
biasing
Narrow viewing angle
Spectrally matched to the 62033 series LED.
Applications:
Incremental
encoding
Reflective
sensors
Position
sensors
Level
sensors
DESCRIPTION
The 61058 is an N-P-N Planar Silicon phototransistor in a lensed TO-46 three-lead package. It is available in a range of
sensitivities and is ideal for use wherever high response, low dark current leakage, and low saturation characteristics are
required. Available custom binned to customer specifications or screened to MIL-PRF-19500.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65C to +150C
Operating Temperature (See part selection guide for actual operating temperature) ......................................-65C to +125C
Collector-Emitter Voltage........................................................................................................................................................50V
Emitter-Collector Voltage.......................................................................................................................................................... 7V
Continuous Collector Current ..............................................................................................................................................50mA
Power Dissipation (Derate at the rate of 2.5 mW/C above 25C) ..................................................................................250mW
Lead Soldering Temperature (1/16" from case for 10 seconds)........................................................................................ 240C
Package Dimensions Schematic Diagram
0.230 [5.84]
0.209 [5.31]
0.195 [4.95]
0.178 [4.52]
0.046 [1.17]
0.036 [0.91]
0.048 [1.22]
0.028 [0.71]
45
COLLECTOR
BASE
EMITTER
0.500 [12.70]
MIN
0.100 [2.54]
0.100 [2.54]
0.100 [2.54]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
3
2
1
0.210 [5.33]
0.170 [4.32]
0.030 [0.76] MAX
3 LEADS
0.019 [0.48]
0.016 [0.41]
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microopac.com
6 - 15
61058
SILICON PHOTOTRANSISTOR (TYPE GS4021)
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
Light Current
61058-X01
61058-X02
61058-X03
61058-X04
I
L
1
4
8
15
5
9
16
--
mA
V
CE
= 5.0V, H = 5 mW/cm
2
1
Dark Current
61058-XXX
I
D
100
nA
V
CE
= 10V, H = 0
Collector-Emitter Breakdown Voltage 61058-XXX
BV
CEO
30
V
I
C
= 100
A
Emitter-Collector Breakdown Voltage 61058-XXX
BV
ECO
7
V
I
E
= 100
A
Light Current Rise Time 61058-X01
61058-X02
61058-X03
61058-X04
t
r
3.0
4.0
5.0
7.0
s
R
L
= 1K
, V
CC
= 5V,
I
L
= 1.0mA
Saturation Voltage 61058-XXX
V
CE (sat)
0.2
V
I
C
= 0.4mA, H = 5 mW/cm
2
Angular Response 61058-XXX
10
degrees
2
NOTES:
1.
Irradiance in mW/cm
2
from a tungsten source at a color temperature of 2870K..
2.
The angle between incidence for peak response and incidence for 50% of peak response.
ANGULAR RESPONSE
RELATIVE SPECTRAL RESPONSE
H
PULSE RESPONSE TEST
CIRCUIT AND WAVEFORM
DUT
RL
OUTPUT
Vcc
IL
tr
tf
10%
90%
A N G L E [ D E G R E E S ]
- 3 0
- 2 0
- 1 0
0
2 0
3 0
1 0
0
2 0
4 0
6 0
1 0 0
R
E
L
A
T
I
VE
R
ESP
O
N
SE
[
%
8 0
4 0
- 4 0
WAVELENGTH [um]
0.4
0.5
0.6
0.7
0.9
1.0
0.8
0
20
40
60
100
R
E
L
A
TI
VE R
E
SPO
N
SE [
%
]
80
1.1
0.3
0.2
1.2
10
30
50
70
90
COLLECTOR-EMITTER CHARACTERISTICS
V C O L L E C T O R -E M IT T E R V O L T A G E [V O L T S ]
0
5
1 0
0
2 .0
4 .0
6 .0
8 .0
C E
I C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
[m
A
]
C
1 5
1 0
2 0
2 5
0 .5
1 .0
2 .0
3 .0
5 .0
H = 1
0 m
W /cm
2
C O L O R T E M P = 2 8 7 0 k
T U N G S T E N S O U R C E
NORMALIZED LIGHT CURRENT
versus TEMPERATURE
T AMBIENT TEMPERATURE [C]
-100
-75
-25
-50
0
0.2
0.4
0.6
1.0
I
[N
O
R
M
A
LIZ
E
D
]
0.8
L
A
1.2
1.6
1.4
2.0
1.8
0
25
50
75
150
125
100
Vcc = 5.0 V
NOTE 1
R =100
L
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Bias Voltage-Collector/Emitter
I
F
5
10
mA
Irradiance (H)
H
15
25
mW/cm
2
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
I
L
Range
61058-001
Silicon Phototransistor in TO-46 package, commercial version
1 to 5mA
61058-101
Silicon Phototransistor in TO-46 package (-55
to +125
C) with 100% screening
1 to 5mA
61058-002
Silicon Phototransistor in TO-46 package, commercial version
4 to 9mA
61058-102
Silicon Phototransistor in TO-46 package (-55
to +125
C) with 100% screening
4 to 9mA
61058-003
Silicon Phototransistor in TO-46 package, commercial version
8 to 16mA
61058-103
Silicon Phototransistor in TO-46 package (-55
to +125
C) with 100% screening
8 to 16mA
61058-004
Silicon Phototransistor in TO-46 package, commercial version
15+ mA
61058-104
Silicon Phototransistor in TO-46 package (-55
to +125
C) with 100% screening
15+ mA