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Электронный компонент: 62000-X04

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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
6 - 23
62000
GaAs LIGHT EMITTING DIODE "PILL PACK"
OPTOELECTRONIC PRODUCTS
DIVISION
05/29/03
Features:

Hermetically sealed
High output, 940nm
Small package
PC board mountable
Narrow beam angle

Applications

Incremental encoding
Reflective sensors
Position sensors
Level sensors

DESCRIPTION

The 62000 is a GaAs Infrared Light Emitting Diode in a lensed "pill" package designed to be mounted in a double-clad
printed circuit board. It is well matched to companion phototransistors and photodarlingtons with it's narrow beam angle lens
and small size which make it ideal for use in optical encoders, card reader arrays, etc. where maximum power out is not a
consideration. Available binned to customer specifications and/or screened to MIL-PRF-19500.


ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65C to +150C
Operating Temperature ......................................................................................................................................-55C to +125C
Reverse Voltage ................................................................................................................................................................... 3Vdc
Forward Current-Continuous (at 25C case) (see note 1) ................................................................................................100mA
Soldering Temperature (10 second) .................................................................................................................................. 240C

NOTE: 1. Derate linearity to 125C case at the rate of 1mA/C above 25C.

Package Dimensions Schematic Diagram


0.010 [0.25]
0.005 [0.01]
0.067 [1.70]
0.063 [1.60]
0.088 [2.24]
0.082 [2.08]
0.135 [3.43]
0.122 [3.10]
0.061 [1.55]
0.058 [1.47]
0.024 [0.61]
0.016 [0.41]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
ANODE
LENS
0.092 [2.34]
0.084 [2.13]
0.019 [0.48]
0.009 [0.23]
CERAMIC
CATHODE
R0.010 0.001 [0.25]
K
A

MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
6 - 23
62000
GaAs LIGHT-EMITTING DIODE "PILL PACK"
05/29/03
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER SYMBOL
MIN
TYP
MAX
UNITS TEST
CONDITIONS NOTE
Output Power 62000-X01
62000-X02
62000-X03
62000-X04
P
O
0.25
0.40
1.0
1.5
mW
I
F
= 50mA
Forward Voltage 62000-X0X
V
F
1.6
V I
F
=50mA
Reverse Breakdown Voltage 62000-X0X
B
VR
3
V I
R
= 10
A
Radiation Rise Time 62000-X0X
t
R
0.7
s
Peak Wavelength 62000-X0X
P
940
nm I
F
=50mA
Beam Angle 62000-X0X
20
degrees

INSTANTANEOUS POWER OUTPUT versus FORWARD CURRENT
RADIATION PATTERN
10
0.2
0.1
o
NORMALIZED TO OUTPUT AT I = 50 mA
T =25C
C
F
P
P
O
W
E
R OUTPU
T
INOR
MA
LIZE
D
20
40
70 100
400
200
1000
0.4
0.7
1
2
4
7
110
I
F
FORWARD CURRENT [mA]
ANG LE [DEGREES]
0
0.2
0.4
0.6
1.0
RE
L
A
T
I
VE
I
N
T
E
NS
I
T
Y
0.8
40
20
20
0
40
POWER OUTPUT versus JUNCTION TEMPERATURE
T - JUNCTION TEMPERATURE - C
-75
-50
-25
0
50
25
J
POW
E
R
OU
TPUT
[
N
OR
M
A
L
I
ZED
]
P
75
100
0.3
0.5
0.7
2.0
3.0
o
150
1
RELATIVE SPECTRAL OUTPUT
WAVELENGTH ( )
8800
9200
10,000
9600
0
0.2
0.4
0.6
1.0
PO
W
E
R O
U
TPU
T
[
N
O
R
M
A
LI
ZED]
0.8
P o
I =50 mA
F
T = 25 C
A
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
P
O
(min)
62000-001 Commercial
0.25
mW
62000-101 Screened
0.25 mW
62000-002 Commercial
0.4
mW
62000-102 Screened
0.4 mW
62000-003 Commercial
1
mW
62000-103 Screened
1 mW
62000-004 Commercial
1.5
mW
62000-104 Screened
1.5 mW