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Электронный компонент: 66004-X01

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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
7 - 3
66004
40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR
or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
High
Reliability
Rugged
package
Stability over wide temperature
40kVdc electrical isolation
Applications:
Grid current modulator
Power Supply Feedback
Switching between power supplies
Patient station isolation
DESCRIPTION
In the 66004, high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either
silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability,
hermetically sealed, ceramic package. Available in commercial (0
to +70
C), extended temperature range (-40
to +85
C)
and full Military temperature range (-55
to +125
C). Contact the factory for special custom or multi-channel
requirements!
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ....................... 35V
Emitter-Collector Voltage........................................................................................................................................................ 7V
Continuous Collector Current ............................................................................................................................................ 50mA
Continuous Transistor Power Dissipation ..................................................................(see Note 1) .............................. 250mW
Input to Output Isolation Voltage ........................................................................................................................................ 40kV
Input Diode Continuous Forward Current at (or below) 65
C Free-Air Temperature ................................................... 100mA
Reverse Input Voltage .......................................................................................................................................................... .2V
Continuous LED Power Dissipation ..........................................................................(see Note 1) ................................ 250mW
Storage Temperature........................................................................................................................................ -65
C to +150
C
Operating Free-Air Temperature Range .......................................................................................................... -55
C to +125
C
Lead Solder Temperature (1/16" from case for 10 seconds max.) ..................................................................................240
C
Notes:
1. Derate linearly to 125
C free-air temperature at the rate of 2.45 mW/
C.
Package Dimensions
Schematic Diagram
N O TE : B LA C K D O T IN D IC A TE S A N O D E FO R LE D
R E D D O T IN D IC A TE S C O LLEC TO R FO R
TR A N SIS TO R .
0.8493 [21.57]
R E D D O T
0.500 M IN [12.70]
16,000 V, BLA C K D O T
A LL D IM EN SIO N S AR E IN IN C H E S [M ILLIM E TE R S] N O M IN AL
0.0175 [ 0.44]
C A TH O D E(-)
0.500 M IN [12.70]
2 LE A D S
A N O D E (+)
B AS E
0.1550 [ 3.94]
0.3100 [ 7.87]
3 LE A D S
0.0175 [ 0.44]
E M ITTE R (-)
C O LLE C TO R (+)
(1)
(2)
(3)
(4)
(5)
A
K
E
B
C
(4)
B
(2)
K
(1)
A
(5)
(3)
C
-X 01
-X 02
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
7 - 4
66004
40kV HIGH VOLTAGE ISOLATER
ELECTRICAL CHARACTERISTICS
T
A
= 25C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode Static Reverse Current 66004-X01
66004-X02
I
R
100
A
V
R
= 2V
Input Diode Static Forward Voltage 66004-X01
66004-X02
V
F
1.15
1.8
V
I
F
= 20mA
Reverse Breakdown Voltage 66004-X01
66004-X02
B
VR
2
10
V
I
R
= 100
A
Input Diode Capacitance 66004-X01
66004-X02
C
IN
25
pF
V = 0V, f = 1MHz
OUTPUT TRANSISTOR
T
A
= 25C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
V
(BR)CEO
35
V
I
C
= 1mA, I
B
= 0, I
F
= 0
Collector-Emitter Dark Current
I
CEO
75
300
nA
nA
V
CE
= 10V, I
F
= 0mA
COUPLED CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Current Transfer Ratio 66004-X01
66004-X02
CTR
5
100
%
V
CE
= 5V, I
F
= 10mA
Collector-Emitter Saturation Voltage 66004-X01
66004-X02
V
CE(SAT)
0.5
1.2
V
I
F
= 50mA, I
C
= 1mA
DC Isolation Voltage 66004-X01
66004-X02
V
ISO
40
40
kV
Rise Time 66004-X01
66004-X02
t
r
10
20
s
V
CC
= 5V, I
F
=16mA, R
L
=100
Fall Time 66004-X01
66004-X02
t
f
10
20
s
V
CC
= 5V, I
F
=16mA, R
L
=100
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Current, High Level
I
FH
16
50
mA
Supply Voltage
V
CE
5
10
V
Operating Temperature
T
A
-55
125
C
SELECTION GUIDE
PART #
PART DESCRIPTION
66004-001
Transistor output, military operating range (-55
to +125
C)
66004-101
Transistor output, full mil-temp (-55
to +125
C) with 100% device screening (on discrete components)
66004-011
Transistor output, commercial version Isolator(0
to 70
C)
66004-002
Darlington output, military operating range (-55
to +125
C)
66004-102
Darlington output, full mil-temp (-55
to +125
C) with 100% device screening (on discrete components)
66004-012
Darlington output, commercial version Isolator(0
to 70
C)