MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
5 - 18
66138
SINGLE CHANNEL, HERMETIC 6 PIN LCC,
ELECTRICALLY SIMILAR TO 4N22, 4N23, 4N24,
4N47, 4N48, 4N49
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
High
Reliability
Base lead provided for conventional transistor
biasing
Very high gain, high voltage transistor
Stability over wide temperature range.
+1kV electrical isolation
Applications:
Eliminate ground loops
Level
shifting
Line
receiver
Switching power supplies
Motor
control
DESCRIPTION
The 66138 single channel optocoupler consists of an infrared LED optically coupled to a high gain silicon phototransistor in a
6 pin LCC package. The 66138 is the electrical equivalent of the 4N22U, 4N23U, 4N24U, 4N47U, 4N48U and the 4N49U and
is available in standard and JAN, JANS, JANTX and JANTXV screened versions.
ABSOLUTE MAXIMUM RATINGS
Input-to-output Voltage ...........................................................................................................................................................+1kV
Collector-Base Voltage (4N2X) ................................................................................................................................................35V
Collector-Base Voltage (4N4X) ................................................................................................................................................45V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero 4N2X)...............35V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero 4N4X)...............40V
Emitter-Base Voltage .................................................................................................................................................................4V
Emitter-Base Voltage (4N4X) .....................................................................................................................................................7V
Input Diode Reverse Voltage .....................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65C Free-Air Temperature (see note 1) ......................................40mA
Peak Forward Input Current (Value applies for tw
<
1
s, PRR
<
300 pps) ...............................................................................1A
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65C to +150C
Operating Free-Air Temperature Range ............................................................................................................. -55C to +125C
Lead Solder Temperature (1/16" (1.6mm) from case for 10 seconds) ................................................................................ 240C
Package Dimensions Schematic Diagram
.240 (6.10)
.250 (6.35)
.165 (4.19)
.175 (4.44)
PIN 1
IDENTIFIER
2
1
6
5
4
3
.045 (1.14)
.055 (1.39)
.095 (2.41)
.105 (2.67)
.082 (2.08)
.098 (2.49)
3
E
B
K
6
4
5
C
A
1
.066 (1.68)
.080 (2.03)
.028 (0.71)
.022 (0.56)
.060 (1.52)
.070 (1.78)
5 PL
Notes:
1. Derate linearly to 125C free-air temperature at the rate of 0.67 mA/C above 65C.
2. Derate linearly to 125C free-air temperature at the rate of 3 mW/C.
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
5 - 19
66138
SINGLE CHANNEL, 6 PIN LCC, EQUIVALENT TO 4N22U, 4N23U 4N24U, 4N47U, 4N48U, 4N49U
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
NOTE
Input Diode Static Reverse Current
I
R
100
A
V
R
= 2V
1
Input Diode Forward Voltage (4N22-24) -55
C
(4N47-49) -55
C
(4N22-24) +25
C
(4N47-49) +25
C
(4N22-24) +100
C
(4N47-49) +100
C
V
F
V
F
V
F
V
F
V
F
V
F
1
1
0.8
0.8
0.7
0.7
1.5
1.7
1.3
1.5
1.2
1.3
V
V
V
V
V
V
I
F
= 10mA
OUTPUT TRANSISTOR
T
A
= 25
C unless otherwise specified.
Collector-Base Breakdown Voltage (4N22-24)
(4N47-49)
V
(BR)CBO
35
45
V
I
C
= 100
A, I
B
= 0, I
F
= 0
Collector-Emitter Breakdown Voltage (4N22-24)
(4N47-49)
V
(BR)CEO
35
40
V
I
C
= 1mA, I
B
= 0, I
F
= 0
Emitter-Base Breakdown Voltage
(4N22-24)
(4N47-49)
V
(BR)EBO
4
7
V
I
C
= 0mA, I
E
= 100
A, I
F
= 0
COUPLED CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
On State Collector Current
4N22
T
a
= +25
C
4N23
4N24
4N22
T
a
= +25
C
4N23
4N24
4N47
4N48
4N49
I
C(ON)
I
C(ON)
I
C(ON)
0.15
0.2
0.4
2.5
6.0
10.0
0.5
1
2
-
5
10
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 1mA
V
CE
= 5V, I
B
= 0, I
F
= 1mA
V
CE
= 5V, I
B
= 0, I
F
= 1mA
On State Collector Current
4N22
T
a
= -55
C
4N23
4N24
4N47
4N48
4N49
I
C(ON)
I
C(ON)
1
2.5
4
0.7
1.4
2.8
mA
mA
mA
mA
mA
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
On State Collector Current
4N22
T
a
= +100
C
4N23
4N24
4N47
4N48
4N49
I
C(ON)
I
C(ON)
1
2.5
4
0.5
1.0
2.0
mA
mA
mA
mA
mA
mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 10mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
V
CE
= 5V, I
B
= 0, I
F
= 2mA
3
Off State Collector Current, T
a
= +25
C
I
C(OFF)
100
nA
V
CE
= 20V, I
B
= 0, I
F
= 0mA
1
Off State Collector Current, T
a
= 100
C
I
C(OFF)
100
A
V
CE
= 20V, I
B
= 0, I
F
= 0mA
1
Collector-Emitter Saturation Voltage
4N22
4N23
4N24
4N47
4N48
4N49
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
0.3
0.3
0.3
0.3
0.3
0.3
V
V
V
V
V
V
I
F
= 20mA, I
C
= 2.5mA, I
B
= 0
I
F
= 20mA, I
C
= 5mA, I
B
= 0
I
F
= 20mA, I
C
= 10mA, I
B
= 0
I
F
= 2mA, I
C
= 0.5mA, I
B
= 0
I
F
= 2mA, I
C
= 1mA, I
B
= 0
I
F
= 2mA, I
C
= 2mA, I
B
= 0
Input to Output Resistance
R
IO
10
11
V
IN-OUT
= 1kV,
2
Input to Output Capacitance
C
IO
2.5
5
pF
F=1MHz, V
IN-OUT
= 0
Rise Time (Phototransistor Operation) 4N22-23
Or
4N24
Fall Time
4N47
4N48-49
t
r
or
t
f
10
10
10
10
15
15
20
25
s
s
s
s
V
CC
= 10V, I
B
= 0, I
F
= 5mA, R
L
= 100
Rise Time (Photodiode Operation)
4N47-49
or
Fall Time
t
r
or
t
f
0.85
0.85
0.85
3
3
3
s
V
CC
= 10V, I
E
= 0, I
F
= 5mA, R
L
= 100
NOTES:
1.
Parameter applies to all part numbers.
2.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
3.
This parameter measured using pulse techniques t
w
=100
s, duty cycle
<
1%.
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Current, Low Level
I
FL
0
100
A
Input Current, High Level
I
FH
1
10
mA
Supply Voltage
V
CC
5.0
20
V
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