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Электронный компонент: 66164-001

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MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 20
HIGH VOLTAGE
66099-4XX
RADIATION TOLERANT OPTOCOUPLER
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Rev A 9\25\02

Features:

Designed to meet or exceed MIL-PRF-19500
radiation requirements
High Current Transfer Ratio - 200% typical
1kVdc electrical input to output isolation
Base lead provided for conventional transistor
biasing
150 V Breakdown voltage

Applications:

Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control

DESCRIPTION
The 66099-4XX optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a
high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both
proton and total dose radiation.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature..........................................................................................................................................-65C to +150C
Operating Free-Air Temperature Range ............................................................................................................-55C to +100C
Lead Solder Temperature (1/16" (1.6mm) from case for 5 seconds) ................................................................................ 240C
Input Diode Forward DC Current.........................................................................................................................................40mA
Input Power Dissipation (see Note 1)................................................................................................................................80mW
Reverse Input Voltage ............................................................................................................................................................. 3V
Collector-Base Voltage .........................................................................................................................................................150V
Collector-Emitter Voltage .....................................................................................................................................................150V
Emitter-Base Voltage................................................................................................................................................................ 6V
Continuous Collector Current ............................................................................................................................................300mA
Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW
Notes:
1. Derate linearly 0.80 mW/C above 25C.
2. Derate linearly 3.0 mW/C above 25C.
Package Dimensions Schematic Diagram
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
6 LEADS
0.016 [0.41]
0.019 [0.48]
1
2
3
5
6
7
0.335 [8.51]
0.305 [7.75]
MIN.
0.040 [1.02]
MAX.
0.500 [12.70]
0.155 [3.94]
0.185 [4.70]
0.045 [1.14]
0.029 [0.73]
0.034 [0.864]
0.028 [0.711]
45
3
5
E
B
K
7
2
1
C
A
0.200 [5.08]
0.370 [9.40]
0.336 [8.51]


MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972) 272-3571 Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 21
66099
4XX
HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER
Rev A 9\25\02
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER SYMBOL
MIN
TYP
MAX UNITS TEST
CONDITIONS
Input Diode Static Reverse Current
I
R
100 A
V
R
= 2V
Input Diode Static Forward Voltage
V
F
0.8 2 V
I
F
= 10mA

OUTPUT TRANSISTOR CHARACTERISTICS
T
A
= 25
C unless otherwise noted
PARAMETER SYMBOL
MIN
TYP
MAX UNITS TEST
CONDITIONS
Collector-Base Breakdown Voltage
V
(BR)CBO
150
V
I
C
= 100
A, I
B
= 0, I
F
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
150
V
I
C
= 1mA, I
B
= 0, I
F
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
4
V
I
C
= 0mA, I
E
= 100
A, I
F
= 0
Collector-Emitter Cutoff Current
I
CEO
100 nA
V
CE
= 20V
COUPLED CHARACTERISTICS
T
A
= 25
C unless otherwise noted
PARAMETER SYMBOL
MIN
TYP
MAX UNITS TEST
CONDITIONS
Current Transfer Ratio
CTR
100
%
V
CE
= 1V, I
F
= 10mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3 V
I
F
= 20mA, I
C
= 10mA
Input-Output Isolation Current
I
ISO
100 nA
V
I-O
= 1000V
Rise Time
t
r
20
s V
CE
= 10V, I
F
= 10mA,
R
L
= 100
Fall Time
t
f
20
s V
CE
= 10V, I
F
= 10mA,
R
L
= 100

RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL
MIN
MAX
UNITS
Input Current, Low Level
I
FL
0 10
A
Input Current, High Level
I
FH
1 20 mA
Operating Temperature
T
A
-55 100
C

ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
66099-401
Radiation Tolerant, High Voltage Optocoupler, Commercial
66099-415
Radiation Tolerant, High Voltage Optocoupler, Screened