MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
3 - 16
66168
PROTON RADIATION TOLERANT OPTOCOUPLER
(Pin-for-Pin Replacement for 4N49)
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Rev. A 4/25/00
Features:
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
Stability over wide temperature
+1000V electrical isolation
Applications:
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The 66168 is a modified 4N49 (LED) designed to be more tolerant to proton radiation. The 66168 optocoupler is packaged
in a hermetically sealed TO-5. This device can be supplied to customer specifications as well as tested in accordance with
MIL-PRF-19500/548 (4N49) to JAN, JANTX, JANTXV and JANS levels.
ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage......................................................................................................................................................... +1kV
Emitter-Base Voltage................................................................................................................................................................ 7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ..........................40V
Collector-Base Voltage ...........................................................................................................................................................45V
Reverse Input Voltage ............................................................................................................................................................. 2V
Input Diode Continuous Forward Current at (or below) 65C Free-Air Temperature (see note 1) ....................................40mA
Peak Forward Input Current (Value applies for tw
<
1
s, PRR
<
300 pps) ............................................................................. 1A
Continuous Collector Current ..............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25C Free-Air Temperature (see Note 2) ................................300mW
Storage Temperature..........................................................................................................................................-65C to +125C
Operating Free-Air Temperature Range ............................................................................................................-55C to +100C
Lead Solder Temperature (10 seconds max.) ................................................................................................................... 240C
Notes:
1. Derate linearly to 125C free-air temperature at the rate of 0.67 mA/C above 65C.
2. Derate linearly to 125C free-air temperature at the rate of 3 mW/C.
Package Dimensions
Schematic Diagram
N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S (M IL L IM E T E R S )
6 L E A D S
0 .0 1 6 [0 .4 1 ]
0 .0 1 9 [0 .4 8 ]
1
2
3
5
6
7
0 .3 3 5 [8 .5 1 ]
0 .3 0 5 [7 .7 5 ]
M IN .
0 .0 4 0 [1 .0 2 ]
M A X .
0 .5 0 0 [1 2 .7 0 ]
0 .1 5 5 [3 .9 4 ]
0 .1 8 5 [4 .7 0 ]
0 .0 4 5 [1 .1 4 ]
0 .0 2 9 [0 .7 3 ]
0 .0 3 4 [0 .8 6 4 ]
0 .0 2 8 [0 .7 1 1 ]
4 5
3
5
E
B
K
7
2
1
C
A
0 .0 2 2 [5 .0 8 ]
MICROPAC INDUSTRIES, INC.
OPTOELECTRONIC PRODUCTS DIVISION 725 E. Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
www.micropac.com
E-MAIL: OPTOSALES @ MICROPAC.COM
3 - 17
66168
PROTON RADIATION TOLERANT OPTOCOUPLER
(Pin-for-Pin Replacement for 4N49)
Rev. A 4/25/00
ELECTRICAL CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER SYMBOL
MIN
TYP
MAX
UNITS TEST
CONDITIONS NOTE
Input Diode Static Reverse Current
I
R
100 A
V
R
= 2V
Input Diode Static Forward Voltage -55
C V
F
1.0 2.4 V
I
F
= 10mA
Input Diode Static Forward Voltage +25
C V
F
0.8 1.7 2.0
V
I
F
= 10mA
Input Diode Static Forward Voltage +100
C V
F
0.7 1.8 V
I
F
= 10mA
OUTPUT TRANSISTOR
T
A
= 25
C unless otherwise specified.
PARAMETER SYMBOL
MIN
TYP
MAX
UNITS TEST
CONDITIONS NOTE
Collector-Base Breakdown Voltage
V
(BR)CBO
45
V
I
C
= 100
A, I
B
= 0, I
F
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V I
C
= 1mA, I
B
= 0, I
F
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
7
V
I
C
= 0mA, I
E
= 100
A, I
F
= 0
Off-State Collector Current +100
C I
C(OFF)
I
C(OFF)
100
100
nA
A
V
CE
= 20V, I
F
= 0mA, I
B
= O
V
CE
= 20V, I
F
= 0mA, I
B
= O
COUPLED CHARACTERISTICS
T
A
= 25
C unless otherwise specified.
PARAMETER SYMBOL
MIN
TYP
MAX
UNITS TEST
CONDITIONS NOTE
On State Collector Current
I
C(ON)
2.0 mA
V
CE
= 5V, I
F
= 1mA
On State Collector Current +100
C I
C(ON)
0.5 mA
V
CE
= 0.4V, I
F
= 2mA
2
On State Collector Current -55
C I
C(ON)
0.7 mA
V
CE
= 5V, I
F
= 2mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3 V I
F
= 2mA, I
C
= 2mA, I
B
= 0
Input to Output Internal Resistance
R
IO
10
11
V
IN-OUT
= 500V
1
Input to Output Capacitance
C
IO
2.5
5
pF
f = 1MHz, V
IN-OUT
= 1kV
1
Rise Time-Phototransistor Operation
t
r
10 25
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
B
= 0
Fall Time-Phototransistor Operation
t
f
10 25
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
B
= 0
Rise Time-Photodiode Operation
t
r
0.85 3
s
V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
E
= 0
Fall Time-Photodiode Operation
t
f
0.85 3
s V
CC
= 10V, I
F
= 5mA,
R
L
= 100
, I
E
= 0
NOTES:
1.
These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2.
This parameter must be measured using pulse techniques (t
W
= 100
s duty cycle
<
1%).
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL
MIN
MAX
UNITS
Input Current, Low Level
I
FL
0 90
A
Input Current, High Level
I
FH
2 10 mA
Supply Voltage
V
CE
5 10 V
Operating Temperature
T
A
-55
100
C
SELECTION GUIDE
PART NUMBER
PART DESCRIPTION
66168-001
Single Channel Commercial Proton Radiation Tolerant (4N49) Optocoupler (0
to 70
C)
66168-101
Single Channel Proton Radiation Tolerant (4N49) Screened to JAN level
66168-103
Single Channel Proton Radiation Tolerant (4N49) Screened to JANTX level
66168-105
Single Channel Proton Radiation Tolerant (4N49) Screened to JANTXV level
66168-300
Single Channel Proton Radiation Tolerant (4N49) Screened to JANS level
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