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Электронный компонент: 2N1711S

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TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
Qualified Level
2N1711
2N1890



JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol 2N1711 2N1890 Unit
Collector-Base Voltage
V
CBO
75
100
Vdc
Emitter-Base Voltage
V
EBO
7.0
Vdc
Collector Current
I
C
500
mAdc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
0.8
3.0
W
W
Operating & Storage Junction Temperature Range
T
J,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Impedance
Z
JX
58
0
C/W
1) Derate linearly 4.57 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 17.2 mW/
0
C for T
C
> 25
0
C



TO-5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
Adc 2N1711, S
2N1890, S
V
(BR)CBO
75
100
Vdc
Collector-Emitter Breakdown Voltage
R
BE
= 10
, I
C
= 100 mAdc 2N1711, S
2N1890, S
V
(BR)CER
50
80
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc 2N1711, S
2N1890, S
V
(BR)CEO
30
60
Vdc
Emitter-Base Breakdown Voltage
I
E
= 100
Adc
V
(BR)EBO
7.0
Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc 2N1711
V
CB
= 80 Vdc 2N1890
I
CBO
10
10
Adc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
I
EBO
5.0
Adc

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N1711, 2N1890 JAN SERIES
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 10
Adc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 500 mAdc, V
CE
= 10 Vdc 2N1711, S

h
FE
20
100
50
300
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc 2N1711, S
2N1890, S
I
C
= 50 mAdc, I
B
= 5.0 mAdc 2N1890, S
V
CE(sat)
1.5
5.0
1.2
Vdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 50 mAdc, I
B
= 5.0 mVdc 2N1890, S
V
BE(sat)
1.3
0.9
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 5.0 mAdc, V
CE
= 10 Vdc
h
fe
80
90
200
270
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc; f = 20 MHz
h
fe
3.5
12
Small-Signal Short-Circuit Input Impedance
I
C
= 5.0 mAdc, V
CB
= 10 Vdc
h
ib
4.0
8.0
Small-Signal Short-Circuit Output Admittance
I
C
= 5.0 mAdc, V
CB
= 10 Vdc
2N1711, S
2N1890, S
h
ob
1.0
.03
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz 2N1711, S
2N1890, S
C
obo
8.0
5.0
25
15
pF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 1 of MIL-PRF-19500/225)
t
on +
t
off
30
s
(3) Pulse Test: Pulse Width 250 to 350
s, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2