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MSCO328A 01-29-98 DSW2N2221A < - > ( 33807)
2N2221A
Features
Meets MIL 19500 /255
Collector - Base Voltage 75 V
Collector - Current 800 mA
High Speed, Medium Current Bipolar Transistor
Maximum Ratings
RATING
SYMBOL
VALUE
UNIT
Collector - Emitter Voltage
V
CEO
50
Vdc
Collector - Base Voltage
V
CBO
75
Vdc
Emitter - Base Voltage
V
EBO
6
Vdc
Collector Current -- Continuous
I
C
800
mAdc
Total Device Dissipation @ T
A
= 25
C
P
D
500
mW
Derate above 25
C
2.85
mW/
C
Total Device Dissipation @ T
C
= 25
C
P
D
1.8
WATTS
Derate above 25
C
10.3
mW/
C
Operating Junction&Storage Temperature Range
T
J
, T
stg
- 65 to + 200
C
Thermal Characteristics
CHARACTERISTIC
SYMBOL
MAX
UNIT
Thermal Resistance, Junction to Ambient
R
JA
350
C/W
COLLECTOR
BASE
EMITTER
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
SWITCHING
TRANSISTOR
JAN, JANTX, JANTXV
TO-18
SMALL SIGNAL
BIPOLAR
NPN SILICON
MSCO328A 01-29-98 DSW2N2221A < - > ( 33807)
2N2221A
Electrical Characteristics (T
A
= 25
C unless otherwise noted)
OFF CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
Collector - Emitter Breakdown Voltage (1)
V(BR)
CEO
( I
C
= 10 mA dc, I
B
= 0 )
50
Vdc
Collector - Base Breakdown Voltage (1)
V(BR)
CBO
( I
C
= 10
Adc, I
E
= 0 )
75
Vdc
Emitter - Base Breakdown Voltage (1)
V(BR)
EBO
( I
E
= 10
Adc, I
C
= 0 )
6
Vdc
Collector - Emitter Cutoff Current
I
CES
( V
CE
= 50 Vdc, V
BE(off)
= 0 V )
50
nAdc
Collector - Base Cutoff Current
I
CBO
( V
CB
= 60 Vdc, I
E
= 0 )
10
nAdc
( V
CB
= 60 Vdc, I
E
= 0, T
A
= 150
C )
10
Adc
Emitter - Base Cutoff Current
I
EBO
( V
EB
= 4 Vdc )
10
nAdc
ON CHARACTERISTIC
SYMBOL
MIN
MAX
UNIT
DC Current Gain
h
FE
( I
C
= 100
A dc, V
CE
= 10 Vdc )
30
( I
C
= 1 mA dc, V
CE
= 10 Vdc )
35
150
( I
C
= 10 mA dc, V
CE
= 10 Vdc )
40
( I
C
= 150 mA dc, V
CE
= 10 Vdc ) (1)
40
120
( I
C
= 500 mA dc, V
CE
= 10 Vdc ) (1)
20
( I
C
= 10 mA dc, V
CE
= 10 Vdc, T
J
= -55
C )
15
Collector - Emitter Saturation Voltage
V
CE(sat)
( I
C
= 150 mAdc, I
B
= 15 mAdc ) (1)
0.3
Vdc
( I
C
= 500 mAdc, I
B
= 50 mAdc ) (1)
1.0
Vdc
Base - Emitter Saturation Voltage
V
BE(sat)
( I
C
= 150 mAdc, I
B
= 15 mAdc ) (1)
0.6
1.2
Vdc
( I
C
= 500 mAdc, I
B
= 50 mAdc ) (1)
2.0
Vdc
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
MSCO328A 01-29-98 DSW2N2221A < - > ( 33807)
2N2221A
Electrical Characteristics (T
A
= 25
C unless otherwise noted)
SMALL - SIGNAL CHARACTERISTICS
SYMBOL
MIN
MAX
UNIT
Output Capacitance
C
obo
( V
CB
= 10 Vdc, I
E
= 0, 100kHz
f
1 MHz )
8
pF
Input Capacitance
C
ibo
( V
EB
= 0.5 Vdc, I
C
= 0, 100kHz
f
1 MHz )
25
pF
SWITCHING CHARACTERISTICS
SYMBOL
MIN
MAX
UNIT
Turn - On Time
t
on
( V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
=15 mAdc) ( See FIGURE 1 )
35
ns
Turn - Off Time
t
off
( V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= - I
B2
= 15 mAdc) ( See FIGURE 2 )
300
ns
Small - Signal AC Characteristics (T
A
= 25
C)
LOW FREQUENCY
SYMBOL
MIN
MAX
UNIT
Common - Emitter Forward Current Transfer Ratio
h
fe
(I
C
= 1 mA, V
CE
= 10 V, f = 1kHz)
30
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio
|h
fe
|
(I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz)
2.5
S p i c e M o d e l
(based upon typical device characteristics)
*
1
Q2N2221A NPN ( IS = 426.3f XTI = 3.0 EG = 1.11 VAF =250.3 BF = 72.14 ISE = 48.14p
+ NE = 2.935 IKF = 2.935 NK = 1.401 XTB = 1.5 BR = 11.49 ISC = 19.9f
+ NC = 1.88 IKR = 10.75 RC = 0.3567 CJC = 11.02p VJC = 0.3869 MJC = 0.3292
+ FC = 0.5 CJE = 29.31p VJE = 0.9036 MJE = 0.4101 TR = 16.89n TF = 537.5p
+ ITF = 0.1383 XTF = 84.83m VTF=10 )
*1. Microsemi Corp. claims no responsibility for misapplication of Spice Model information. Spice modeling should be
used as a precursor guide to in-circuit performance. Actual performance is the responsibility of the user/designer.
MSC0328A 11-10-97 DSW2N2221A< - > (33807)
2N2221A
TO 18 CASE OUTLINE
DIE OUTLINE
19.8 MIL TYP
SQUARE
(E)
(B)
DIE CHARACTERISTICS
Back is Collector
Chip Thickness is:
10 MILS TYP
Metalization is:
Top = Al, Back = Au
MSC0328A 11-10-97 DSW2N2221A< - > (33807)
2N2221A
FIGURE 1 Saturated Turn-on Time Test Circuit
FIGURE 2 Saturated Turn-off Time Test Circuit
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