TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices
Qualified Level
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N4449U
2N4449UA
2N4449UB
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
All UB
All others Unit
Collector-Emitter Voltage
V
CEO
20
15
Vdc
Emitter-Base Voltage
V
EBO
6.0
4.5
Vdc
Collector-Base Voltage
V
CBO
40
Vdc
Collector-Emitter Voltage
V
CES
40
Vdc
@ T
A
= +25
0
C @ T
C
= +25
0
C
Total Power Dissipation 2N2369A; 2N4449
All UA
All UB
All U
P
T
0.50
(1)
0.50
(5)
0.40
(6)
0.60
(3)
1.2
(2)
1.2
(2)
1.4
(7)
1.5
(4)
W
W
Operating & Storage Junction Temperature Range T
op,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
All U
R
JC
146
125
135
117
0
C/mW
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
All UA
All UB
All U
R
JA
325
350
437
291
0
C/mW
1) Derate linearly 3.08 mW/
0
C above T
A
= +37.5
0
C 5) Derate linearly 2.86 mW/
0
C above T
C
= +63.5
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C 6) Derate linearly 2.29 mW/
0
C above T
C
= +63.5
0
C
3) Derate linearly 3.44 mW/
0
C above T
A
= +63.5
0
C 7) Derate linearly 8.00 mW/
0
C above T
C
= +63.5
0
C
4) Derate linearly 8.55 mW/
0
C above T
C
= +63.5
0
C
TO-18* (TO-206AA)
2N2369A
TO-46 (TO-206AB)
2N4449
SURFACE MOUNT
UA*
SURFACE MOUNT
UB*
SURFACE MOUNT
U*
*See appendix A for
package outline
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
V
(BR)CEO
15
Vdc
Collector-Emitter Cutoff Current
V
CE
= 20 Vdc
I
CES
0.4
Adc
Emitter-Base Breakdown Voltage
V
EB
= 4.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc
I
EBO
10
0.25
Adc
Collector-Base Breakdown Voltage
V
CB
= 40 Vdc
Collector-Base Cutoff Current
V
CB
= 32 Vdc
I
CBO
10
0.2
Adc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 0.35 Vdc
I
C
= 30 mAdc, V
CE
= 0.4 Vdc
I
C
= 10 mAdc, V
CE
= 1.0 Vdc
I
C
= 100 mAdc, V
CE
= 1.0 Vdc
h
FE
40
30
40
20
120
120
120
120
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 30 mAdc, I
B
= 3.0 mAdc
I
C
= 100 mAdc, I
B
= 10 mAdc
V
CE(sat)
0.20
0.25
0.45
Vdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 30 mAdc, I
B
= 3.0 mAdc
I
C
= 100 mAdc, I
B
= 10 mAdc
V
BE(sat)
0.70
0.80
0.85
0.90
1.20
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz
h
fe
5.0
10
Output Capacitance
V
CB
= 5.0 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
C
obo
4.0
pF
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
C
ibo
5.0
pF
(1)Pulse Test: Pulse Width = 300
s, Duty Cycle
2.0%.
SWITCHING CHARACTERISTICS
Turn-On Time
I
C
= 10 mAdc; I
B1
=
3.0 mAdc, I
B2
=
1.5 mAdc
t
on
12
s
Turn-Off Time
I
C
= 10 mAdc; I
B1
=
3.0 mAdc
,
I
B2
=
1.5 mAdc
t
off
18
s
Charge Storage Time
I
C
= 10 mAdc; I
B1
=
10 mAdc
,
I
B2
=
10 mAdc
t
s
13
s
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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