2N4033
80 Volts
1.0 Amps
Features
Meets MIL-S-19500/512
Collector-Base Voltage 80V
Collector Current: 1.0 A
Fast Switching 250 nS
RATING
SYMBOL
MAX.
UNIT
Collector-Emitter Voltage
V
CEO
-80
Vdc
Collector-Base Voltage
V
CBO
-80
Vdc
Emitter-Base Voltage
V
EBO
-5.0
Vdc
Collector Current--Continuous
I
C
-1.0
Adc
Total Device Dissipation
@ T
A
= 25
o
C
Derate above 25
o
C
P
D
0.8
4.56
W
mW/
o
C
Total Device Dissipation
@ T
C
= 25
o
C
Derate above 25
o
C
P
D
4.0
22.8
W
mW/
o
C
Operating Temperature Range
T
J
-55 to
+200
o
C
Storage Temperature Range
T
S
-55 to
+200
o
C
Thermal Resistance, Junction to Ambient
R
JA
140
o
C/W
Thermal Resistance, Junction to Case
R
JC
25
o
C/W
Maximum Ratings
Datasheet# MSC0283A 5/23/97
PNP
BIPOLAR
TRANSISTOR
580 Pleasant St.
Watertown, MA 02172
PH: (617) 924-0404
FAX: (617) 924-1235
Mechanical Outline
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage(1) (I
C
= -10 mA)
BV
CEO
-80
--
V
Collector-Base Breakdown Voltage (I
C
= -10
A)
BV
CBO
-80
--
V
Emitter-Base Breakdown Voltage (I
E
= -10 uA)
BV
EBO
-5.0
--
V
Collector Cutoff Current
(V
CB
= -60 V)
(V
CB
= -60 V, T
A
= 150
o
C)
I
CBO
--
--
-10
-25
nA
uA
Emitter Cutoff Current (V
EB
= -3.0 V)
I
EBO
--
-25
nA
D.C. Current Gain
(I
C
= -500 mA, V
CE
= -5.0 V @ -55
o
C)(1)
(I
C
= -100
A, V
CE
= -5.0 V)
(I
C
= -100 mA, V
CE
= -5.0 V)(1)
(I
C
= -500 mA, V
CE
= -5.0 V)(1)
(I
C
= -1.0 A, V
CE
= -5 V)(1)
h
FE
30
50
100
70
25
--
--
300
--
--
--
Collector-Emitter Saturation Voltage(1)
(I
C
= -150 mA, I
B
= -15 mA)
(I
C
= -500 mA, I
B
= -50 mA)
(I
c
= -1.0A,
I
B
= -100mA)
V
CE(Sat)
--
--
--
-0.15
-0.50
1.0
V
Base-Emitter Saturation Voltage(1)
(I
C
= -150 mA, I
B
= -15 mA)
V
BE(Sat)
--
-0.9
V
Base-Emitter On Voltage
(I
C
= -500 mA, V
CE
= - 0.5 V)(1)
V
BE(Sat)
--
-1.2
V
Output Capacitance
(V
CE
= -10 V, 100kHz < f < 1.0MHz)
C
OBO
--
20
pF
Input Capacitance
(V
CE
= -0.5 V, 100kHz < f < 1.0 MHz)
C
IBO
--
80
pF
Small Signal Current Gain
(I
C
= -50 mA, V
CE
= -10 V, f = 100 MHz)
/h
fe
/
1.5
6.0
Switching Speeds
Delay Time (I
c
= 500mAdc;
I
B
= 50mAdc)
Rise Time (I
c
= 500mAdc; I
B
=
50mAdc)
Storage Time (I
c
= 500mAdc; I
B1
=
I
B2
= 50mAdc)
Fall Time (I
c
= 500mAdc; I
B1
= I
B2
= 50mAdc)
t
d
t
r
t
s
t
f
--
--
--
--
15
25
175
35
ns
Electrical Parameters (T
A
@ 25
C unless otherwise specified)
2N4033
Datasheet# MSC0283A 5/23/97
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