Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
Copyright
2002
MXP1144.PDF, 2003-08-15
WWW
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Microse
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MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS,
1.0 Amps
P
RODUCT
P
REVIEW
S A N T A A N A D I V I S I O N
D E S C R I P T I O N
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
IMPORTANT:
For the most current data, consult
MICROSEMI
's website: http://www.microsemi.com
K E Y F E A T U R E S
Oxide passivated structure for
very low leakage currents
Epitaxial structure minimizes
forward voltage drop
Triangular shape to fit in corner
near flat of photovoltaic cell
Forward voltage decreases with
radiation exposure
Targeted for terrestrial
applications with silicon
photovoltaic cells
Thin construction for fit with
photovoltaic cells
APPLICATIONS/BENEFITS
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
MAXIMUM RATINGS @ 25C (UNLESS OTHERWISE SPECIFIED)
DESCRIPTION
SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage
V
RRM
50 Volts
Working Peak Reverse Voltage
V
RWM
50 Volts
DC Blocking Voltage
V
R
50 Volts
Average Rectified Forward Current, Tc
135C
I
F(ave)
1.0 Amps
Junction Temperature Range
T
j
-65 to +150
C
Storage Temperature Range
T
stg
-65 to +200
C
ELECTRICAL PARAMETERS
DESCRIPTION
SYMBOL
CONDITIONS
MIN TYP. MAX UNIT
IR
25
VR= 4 Vdc, Ta= 25
C
10 nA
Reverse (Leakage)
Current (in dark)
IR
25
VR= 50 Vdc, Ta= 25
C
20
200
nA
Forward Voltage
VF1
IF= 400 mA, Ta= 25
C
750
775 mV
pulse test, pw= 300
s
VF2
IF= 1.0 A, Ta= 25
C
770
800 mV
Junction Capacitance
Cj1
VR= 4 Vdc
1050
1300
pF
Breakdown Voltage
BVR
IR= 200
A, Ta= 25C
50 60 V
M
M
X
X
P
P
1
1
1
1
4
4
4
4
P
P
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
Copyright
2002
MXP1144.PDF, 2003-08-15
WWW
.
Microse
m
i
.
CO
M
MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS,
1.0 Amps
P
RODUCT
P
REVIEW
S A N T A A N A D I V I S I O N
Mechanical Outline
0
0
all dimensions in mils
L
315.0
315.0
R = 4.0, 6 PL.
26.0
26.0
289.0
289.0
26.0
metal
(cathode)
MXP1144P
Standard die thickness is 5.0 +/- 0.5 mils
M
M
E
E
C
C
H
H
A
A
N
N
I
I
C
C
A
A
L
L
S
S
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 3
Copyright
2002
MXP1144.PDF, 2003-08-15
WWW
.
Microse
m
i
.
CO
M
MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS,
1.0 Amps
P
RODUCT
P
REVIEW
S A N T A A N A D I V I S I O N
Typical location with 100mm diameter photovoltaic cell
diode location
M
M
E
E
C
C
H
H
A
A
N
N
I
I
C
C
A
A
L
L
S
S
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4
Copyright
2002
MXP1144.PDF, 2003-08-15
WWW
.
Microse
m
i
.
CO
M
MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS,
1.0 Amps
P
RODUCT
P
REVIEW
S A N T A A N A D I V I S I O N
N O T E S
N
N
O
O
T
T
E
E
S
S
PDF 
ZIP