Pre-production
26BAM0545
General Description
Mimix Broadband
'
s 20.0-38.0 GHz GaAs MMIC
fundamental balanced mixer has been optimized for use
as an up-converter. The device has a conversion loss of
8.0 dB with a +25.0 dBm input third order intercept point.
IF and IF mixer inputs are provided through an external
180 degree hybrid. This MMIC uses Mimix Broadband
'
s
0.15
m GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either
a conductive epoxy or eutectic solder die attach process.
This device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
+0.3 VDC
+20.0 dBm
-65 to +165
O
C
-55 to +125
O
C
Absolute Maximum Ratings
Fundamental Balanced Mixer
8.0 dB Conversion Loss
+25.0 dBm Input Third Order Intercept (IIP3)
35.0 dB LO to RF Isolation
100% On-Wafer RF Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Chip Device Layout
Page 1 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Units
GHz
GHz
GHZ
GHz
dB
dB
dB
dB
dBm
dB
dB
dB
dBm
VDC
Min.
20.0
20.0
15.0
DC
-
-
-
-
-
-
-
-
-
-1.2
Typ.
-
-
-
-
10.0
10.0
10.0
8.0
+12.0
35.0
TBD
TBD
+25.0
-0.5
Max.
38.0
38.0
43.0
3.0
-
-
-
-
-
-
-
-
-
+0.1
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
RF Return Loss (S11)
IF Return Loss (S22)
LO Return Loss (S33)
Conversion Loss (S21)
LO Input Drive (P
LO
)
Isolation LO/RF
Isolation LO/IF
Isolation RF/IF
Input Third Order Intercept (IIP3)
Gate Bias Voltage (Vg1)
November 2005 - Rev 21-Nov-05
Mixer Measurements
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 2 of 5
Pre-production
26BAM0545
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
26BAM0545: LO to RF Isolation (dB) vs LO Freq (GHz)
LO = +12 dBm, Vg = -0.5 V
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
18
20
22
24
26
28
30
32
34
36
38
40
LO (GHz)
L
O
to
RF
Is
o
l
at
io
n
(
d
B)
26BAM0545: IIP3 (dBm) vs. RF USB (GHz)
IF = 2 GHz at -13 dBm per Tone
0
5
10
15
20
25
30
18
20
22
24
26
28
30
32
34
36
38
40
RF USB (GHz)
IIP3 (
d
Bm)
LO = 9 dBm
LO = 12 dBm
LO = 15 dBm
26BAM0545: IIP3 (dBm) vs. RF LSB (GHz)
IF = 2 GHz at -13 dBm per Tone
0
5
10
15
20
25
30
18
20
22
24
26
28
30
32
34
36
38
40
RF LSB (GHz)
IIP3 (
d
Bm)
LO = 9 dBm
LO = 12 dBm
LO = 15 dBm
November 2005 - Rev 21-Nov-05
26BAM0545: Conversion Gain (dB) vs RF Freq (GHz)
IF = 1.8 GHz, IF Pin = -10 dBm, LO = +12 dBm
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
18
20
22
24
26
28
30
32
34
36
38
40
RF (GHz)
Conver
s
i
on Gai
n
(dB
)
RF at USB
RF at LSB
2
3
5
1
4
Vg
LO
RF
IF1
IF2
0.316
(0.012)
2
3
5
1
2.000
(0.079)
1.460
(0.057)
0.0
0.0
0.316
(0.012)
1.250
(0.049)
1.594
(0.063)
4
0.995
(0.039)
Pre-production
26BAM0545
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
Page 3 of 5
Mechanical Drawing
Bias Arrangement
(Note: Engineering designator is 26BAM0545)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.550 mg.
Bond Pad #1 (RF)
Bond Pad #2 (IF1)
Bond Pad #3 (LO)
Bond Pad #4 (Vg)
Bond Pad #5 (IF2)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Bypass Capacitors
- See App Note [2]
November 2005 - Rev 21-Nov-05
Pre-production
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Page 4 of 5
USB
LSB
IF1
IF2
An alternate method of Selection of USB or LSB:
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0) and coupled port (180)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
With IF1 and IF2 connected to the
direct port (0) and coupled port (180)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
For Upper Side Band operation (USB):
-180
In Phase Combiner
USB
In Phase Combiner
LSB
-180
IF2
IF1
IF2
IF1
26BAM0545
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
November 2005 - Rev 21-Nov-05
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by biasing Vg1 = -0.5V. Gate current
consumption is < 1mA.
App Note [2] Bias Arrangement - Each DC pad (Vg) needs to have DC bypass capacitance (~100-200 pF) as close to
the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3]
USB/LSB Selection
-
IF1 and IF2 are fed through a 180 Hybrid coupler for optimum performance. IF1 can
be singly fed with IF2 terminated in 50 Ohm for ease of use. This will result in approximately 2 dB reduction in IP3 and
conversion gain performance.
Pre-production
26BAM0545
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
Page 5 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
2
+
-
November 2005 - Rev 21-Nov-05
PDF 
ZIP