0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
Page 1 of 17
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CFS0303-SB
Functional Diagram (SOT-343)
Drain
Source
Source
Gate
May 2006 - Rev 23-May-06
Features
Description
AIGaAs/InGaAs/AIGaAs Pseudomorphic
High Electron Mobility Transistor (pHEMT)
High Dynamic Range
Low Current and Voltage
Bias Point 3V and 60 mA
0.3 dB Noise Figure at 2 GHz
17 dBm P1dB at 2 GHz
33 dBm OIP3 at 2 GHz
600 m Gate Width: 50 Output Impedance
Excellent Uniformity
Low-Cost, Surface-Mount Package (SOT-343)
Ro-HS Compliant Construction
Low Thermal Resistance: 98C/W
Low Noise Amplifiers and Oscillators Operating
over the RF and Microwave Frequency Ranges
Cellular/PCS/GSM/W-CDMA
Mobile Handsets, Base Station Receivers and
Tower-Mount Amplifiers
Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and
MMDS Applications
General Purpose Discrete pHEMT for Other Ultra
Low-Noise and Medium Power Applications
Applications
Mimix's pHEMT technology is tested and proven
in military, space and commercial applications. Mimix's
proven workhorse, the CF003-03, has been fabricated in the
Company's in-house foundry for over 19 years and is now
available in packaged form as the CFS0303-SB.
The CFS0303-SB is a high dynamic range, low-
noise, pHEMT packaged in a 4-lead SOT-343 surface-mount
plastic package. It is intended for many applications operating
in the 0.1GHz to 10GHz frequency range.
Mimix's high performance packaged pHEMTs are
ideal for use in all applications where low-noise figure, high
gain, medium power and good intercept is required. The
CFS0303-SB is the perfect solution for the first or second
stage of a base station LNA due to the excellent combination
of low-noise figure and linearity. It is also well suited as a
medium power driver stage in pole-top amplifiers and other
transmit functions, particularly as the low thermal resistance
allows extended power dissipation when voltage and current
are adjusted for increased power and linearity.
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
Page 2 of 17
CFS0303-SB
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 23-May-06
Electrical Characteristics
Ta=25C, Typical device RF parameters measured in test system.
Parameters
Test Conditions
Min
Typ
Max
Units
Saturated Drain Current 1
Vds=1.5V, Vgs=0V
120
165
200
mA
Pinch-off Voltage 1
Vds=1.5V, Ids=10% of Idss
-0.8
-0.65
-0.5
V
No RF, Quiescent Bias Current
Vgs=0.45V, Vds=2V
60
mA
Transconductance 1
Vds=2.5V. Gm=Idss/Vp
190
250
mmho
Gate to Drain Leakage Current
Vgd = 5
250
A
Gate Leakage Current
Vgd=Vgs= -4V
10
150
A
Noise Figure
f=1000MHz
Vds=2V, Ids=10mA
0.3
dB
Vds=2V, Ids=20mA
0.35
dB
Vds=3V, Ids=20mA
0.3
0.7
dB
Vds=3V, Ids=60mA
0.18
0.53
dB
f=2GHz
Vds=2V, Ids=10mA
0.4
dB
Vds=2V, Ids=20mA
0.37
dB
Vds=3V, Ids=20mA
0.4
0.8
dB
Vds=3V, Ids=60mA
0.26
0.61
dB
Associated Gain 2
f=1000MHz
Vds=2V, Ids=10mA
19.7
dB
Vds=2V, Ids=20mA
20.8
dB
Vds=3V, Ids=20mA
21.1
dB
Vds=3V, Ids=60mA
22.4
dB
f=2GHz
Vds=2V, Ids=10mA
13.1
14.6
16.1
dB
Vds=2V, Ids=20mA
15.5
dB
Vds=3V, Ids=20mA
15.7
dB
Vds=3V, Ids=60mA
15.3
16.8
18.3
dB
Output Third Order Intercept Point
f=1000MHz
Vds=2V, Ids=10mA
22.5
dBm
Vds=2V, Ids=20mA
24.5
dBm
Vds=3V, Ids=20mA
24.0
26.5
dBm
Vds=3V, Ids=60mA
32.0
dBm
f=2GHz
Vds=2V, Ids=10mA
23.0
dBm
Vds=2V, Ids=20mA
25.5
dBm
Vds=3V, Ids=20mA
24.5
27.0
dBm
Vds=3V, Ids=60mA
32.5
dBm
1 dB Gain Compression Point 2
f=1000MHz
Vds=2V, Ids=10mA
12.5
dBm
Vds=2V, Ids=20mA
12.5
dBm
Vds=3V, Ids=20mA
14.0
16.0
dBm
Vds=3V, Ids=60mA
17.0
dBm
f=2GHz
Vds=2V, Ids=10mA
12.5
dBm
Vds=2V, Ids=20mA
12.5
dBm
Vds=3V, Ids=20mA
14.0
16.0
dBm
Vds=3V, Ids=60mA
17.0
dBm
Notes:
1. Guaranteed at wafer probe.
2. Measurements obtained at fixed tuned system.
Absolute Maximum Ratings
1
Parameter
Rating
Parameter
Rating
Parameter
Rating
Drain-Source Voltage 2
+5.5 V
Drain Current 2
Idss 3 A
Channel Temperature
+175C
Gate-Source Voltage 2
-5.0 V
Total Pwr Dissipation
560 mW
Storage Temperature
-65C to +160C
Gate-Drain Voltage 2
-5.0 V
RF Input Power
17 dBm
Thermal Resistance
98C/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
Page 3 of 17
Block diagram of 2.0 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
Circuit Losses have been de-embedded from actual Measurements.
50 Ohm
Transmission Line
Including Gate Bias T
(0.5 dB Loss)
Input Matching Circuit
Tau-Mag = 0.54
T-Ang = 15
(0.4 dB Loss)
DUT
50 Ohm
Transmission Line
Including Drain Bias T
(0.5 dB Loss)
Input
Output
CFS0303-SB
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 23-May-06
Typical Pulsed I-V Performance
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
Page 4 of 17
CFS0303-SB
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 23-May-06
Typical Performance
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise
as P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements.
OIP3 and P
1dB
vs. Bias at 2GHz
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
I
DSQ
(mA)
OIP3, P
1dB
(dBm)
4V
3V
2V
OIP3
P
1dB
OIP3 and P
1dB
vs. I
DSQ
at 1GHz
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
I
DSQ
(mA)
OIP3, P
1dB
(dBm)
4V
3V
2V
OIP3
P
1dB
1,2
1,2
?
??
??
?
?
?
2
NF and Ga vs. Bias at 2GHz
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
6
8
10
12
14
16
18
22
20
IDSQ(mA)
NFmin(dB)
Ga(dB)
3V
2V
4V
Ga
NFmin
0 10 20 30 40 50 60
?
?
?
?
??
2
NF and Ga vs. Bias at 1GHz
2V
3V
4V
Ga
NFmin
0
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1.4
6
8
10
12
14
16
18
22
20
IDSQ(mA)
NFmin(dB)
Ga(dB)
0 10 20 30 40 50 60
0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
Page 5 of 17
CFS0303-SB
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 23-May-06
Typical Performance
Notes:
1. P1dB and OIP3 measurements are performed with passive biasing. Idsq is set with zero RF drive applied. As P1dB is approached, the drain current may
increase or decrease depending on frequency and DC bias point. At lower values of Idsq the device is running in a Class AB mode and current tends to rise
as P1dB is approached. As an example, at a Vds = 3.0V and Idsq = 10 mA, Id increases to 30 mA as P1dB of 16.5 is approached. This rise in current is no
longer present as Idsq approaches 60 mA.
2. Measurements made on a fixed tuned test system set for optimum noise match. Circuit losses have been de-embedded for the actual measurements.
OIP3 and P1dB vs. Frequency and Temperature, Vds=3V, Ids=20mA
5
10
15
20
25
30
1
2
3
4
5
6
Frequency (GHz)
OIP3, P1dB (dBm)
25deg
-40deg
85deg
OIP3
P
1dB
5mA
10 mA
15mA
20mA
40mA
60mA?
???
???
????
????
????
2
Nfmin vs. Frequency and Current, Vd=3V
NFmin (dB)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10
Frequency (GHz)
????
????
????
2
1,2
Associated Gain vs. Frequency and Current, Vd=3V
Gain (dB)
Frequency (GHz)
5mA
10 mA
15mA
20mA
40mA
60mA?
0 1 2 3 4 5 6 7 8 9 10
25
20
15
10
5
0
Ga??
1
Nfmin and Associated Gain vs. Frequency and Temperature, Vd=3V, Ids=20mA
Ga (dB)
22
20
18
16
14
12
10
8
6
4
2
0 2 4 6 8 10
Frequency (GHz)
1.5
1.35
1.2
1.05
0.9
0.75
0.6
0.45
0.3
0.15
0
NFmin (dB)
NFmin
25deg
85deg
40deg
PDF 
ZIP