Mimix Broadband
's 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB across the band. The
device also includes 30.0 dB gain control and a +15
dBm P1dB compression point. This MMIC uses Mimix
Broadband
's 0.15 m GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Absolute Maximum Ratings
Page 1 of 6
Features
Ultra Wide Band Driver Amplifier
Fiber Optic Modulator Driver
17.0 dB Small Signal Gain
5.0 dB Noise Figure
30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
220 mA
+0.3 VDC
+15 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
2
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (
S21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Gain Control Bias (Vg)
Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical)
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
18.0
-
-
-
-
-
-
-
-
-
-
-2.0
-
Typ.
-
10.0
11.0
17.0
+/-1.0
30.0
40.0
5.0
+15.0
+24.0
+5.0
0.0
160
Max.
50.0
-
-
-
-
-
-
-
-
-
+5.5
+.01
190
(1) Measured using constant current.
1
1
2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
Distributed Amplifier Measurements
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
XD1001 Vd=5.0 V Id=150 mA
~140 Devices
12
13
14
15
16
17
18
19
20
21
22
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
46.0
48.0
50.0
Fre que ncy (GHz)
G
a
in
(
d
B
)
Max
Median
Mean
-3sigma
XD1001 Vd=5.0 V Id=150 mA
~140 Devices
-20
-15
-10
-5
0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
46.0
48.0
50.0
Fre que ncy (GHz)
I
n
put
R
e
t
u
r
n
Los
s
(
d
B
)
Max
Median
Mean
-3sigma
XD1001 Vd=5.0 V Id=150 mA
~140 Devices
-35
-30
-25
-20
-15
-10
-5
0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
46.0
48.0
50.0
Fre que ncy (GHz)
O
u
t
put
R
e
t
u
r
n
Los
s
(
d
B
)
Max
Median
Mean
-3sigma
XD1001 Vd=5.0 V Id=150 mA
~35 Devices
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
Fre que ncy (GHz)
N
o
i
s
e
Fi
gur
e
(
d
B
)
Max
Median
Mean
Min
XD1001 Vd=5.0 V Id=150 mA
~35 Devices
10
11
12
13
14
15
16
17
18
19
20
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
46.0
48.0
50.0
Fre que ncy (GHz)
O
u
t
put
P
o
w
e
r
P
1
dB
(
d
B
m
)
Max
Median
Mean
-3sigma
XD1001 Vd=5.0 V Id=150 mA
~140 Devices
-70
-60
-50
-40
-30
-20
-10
0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
42.0
44.0
46.0
48.0
50.0
Fre que ncy (GHz)
R
e
v
e
r
s
e
I
s
ol
a
t
i
on (
d
B
)
Max
Median
Mean
-3sigma
Page 3 of 6
Distributed Amplifier Measurements (cont.)
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
Frequency (GHz)
30DA0445_0-75GHz_Sparameters
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
S22
S21
S11
WP340 0445 Attenuation vs Vg for 36 to 41 GHz
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
-2
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
Vg (V)
At
t
e
nuat
i
o
n (
d
B
)
36.013
37.012
38.011
39.01
40.009
41.008
0445_5samples: OIP3 avg (dBm) vs. freq (GHz)
Pin = -15dBm per Tone, Vg = -0.3 to 0V, Vd = 5V
0
5
10
15
20
25
30
18
20
22
24
26
28
30
32
34
36
38
freq (GHz)
O
I
P
3
av
g
(
d
Bm)
, Vg1 (V)=-0.3, DeviceCoord=R1C1
, Vg1 (V)=-0.3, DeviceCoord=R1C4
, Vg1 (V)=-0.3, DeviceCoord=R2C2
, Vg1 (V)=-0.3, DeviceCoord=R3C3
, Vg1 (V)=-0.3, DeviceCoord=R4C1
, Vg1 (V)=-0.2, DeviceCoord=R1C1
, Vg1 (V)=-0.2, DeviceCoord=R1C4
, Vg1 (V)=-0.2, DeviceCoord=R2C2
, Vg1 (V)=-0.2, DeviceCoord=R3C3
, Vg1 (V)=-0.2, DeviceCoord=R4C1
, Vg1 (V)=-0.1, DeviceCoord=R1C1
, Vg1 (V)=-0.1, DeviceCoord=R1C4
, Vg1 (V)=-0.1, DeviceCoord=R2C2
, Vg1 (V)=-0.1, DeviceCoord=R3C3
, Vg1 (V)=-0.1, DeviceCoord=R4C1
, Vg1 (V)=0, DeviceCoord=R1C1
, Vg1 (V)=0, DeviceCoord=R1C4
, Vg1 (V)=0, DeviceCoord=R2C2
, Vg1 (V)=0, DeviceCoord=R3C3
, Vg1 (V)=0, DeviceCoord=R4C1
Page 4 of 6
Mechanical Drawing
Bond Pad #1 (RF In)
Bond Pad #2 (Vd)
Bond Pad #3 (RF Out)
Bond Pad #4 (Vg)
Bias Arrangement
Bypass Capacitors - See App Note [2]
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
(Note: Engineering designator is 30DA0445)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.572 mg.
1
2
3
4
1.300
(0.051)
0.396
(0.016)
0.922
(0.036)
1.950
(0.077)
0.0
0.0
0.379
(0.015)
1.555
(0.061)
1
2
3
4
Vd
RF In
RF Out
Vg
RF Out
Vg
RF In
Vd
Page 5 of 6
Device Schematic
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with a single drain and a gain control
voltage. Maximum gain bias is nominally Vd=5.0V, Vg=0V, Id=160mA. Gain can be adjusted by changing Vg. It is
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the
most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain
supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain
voltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
D1001
MTTF Table (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions:
Vd=5.0V, Id=160 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
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