January 2006 - Rev 25-Jan-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Mimix Broadband

's 11.0-17.0 GHz GaAs MMIC receiver has a noise

figure of 2.2 dB and 20.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO buffer amplifer. The image
reject mixer eliminates the need for a bandpass filter after the LNA to
remove thermal noise at the image frequency. I and Q mixer outputs
are provided and an external 90 degree hybrid is required to select the
desired sideband. This MMIC uses Mimix Broadband

's 0.15 µm GaAs

PHEMT device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.

11.0-17.0 GHz GaAs MMIC

Receiver

Page 1 of 8

Fully Integrated Design
2.2 dB Noise Figure
13.5 dB Conversion Gain
20 dB Image Rejection
+4 dBm IIP3
+3 dBm LO drive Level
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010

Features

General Description

Absolute Maximum Ratings

Supply Voltage (Vd)
Supply Current (Id1), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)

+6.0 VDC

250, 200 mA

+0.3 VDC

+17 dBm

-65 to +165

-55 to MTTF Table

MTTF Table

Chip Device Layout

(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.

Electrical Characteristics (Ambient Temperature T = 25

Units

GHz
GHz
GHz

dB
dB

dBm

dBc

dB
dB

dBm

VDC
VDC
VDC
VDC
VDC

mA
mA

Min.

11.0

9.0
DC

-
-
-
-
-
-
-
-
-

-1.2
-1.2
-1.2

-
-

Typ.

-
-

2.0

15.0
13.5

+3.0

20.0

2.2

40.0/40.0

+4.0
+3.0
+5.0

-0.3
-0.1
-0.5

100

Max.

17.0
19.0
TBD

-
-
-
-
-
-
-

+6.0
+6.0
+0.1
+0.1
+0.1

200
150

Parameter

Frequency Range (RF)
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
LO Input Drive (P

)

Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd3)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3)
Gate Bias Voltage (Vg4) Mixer, Doubler
Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)

(1) Measured using constant current.

R1007

11.0-17.0 GHz GaAs MMIC

Receiver

Page 2 of 8

Receiver Measurements

LSB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005:

OIP3 avg (dBm) vs. RF (GHz)

RF (GHz)

OIP3 avg (dBm)

OIP3, PLO (dBm)=0, RC=R10C4

OIP3, PLO (dBm)=0, RC=R10C6

OIP3, PLO (dBm)=0, RC=R11C6

OIP3, PLO (dBm)=0, RC=R12C4

OIP3, PLO (dBm)=0, RC=R13C7

OIP3, PLO (dBm)=3, RC=R10C4

OIP3, PLO (dBm)=3, RC=R10C6

OIP3, PLO (dBm)=3, RC=R11C6

OIP3, PLO (dBm)=3, RC=R12C4

OIP3, PLO (dBm)=3, RC=R13C7

OIP3, PLO (dBm)=6, RC=R10C4

OIP3, PLO (dBm)=6, RC=R10C6

OIP3, PLO (dBm)=6, RC=R11C6

OIP3, PLO (dBm)=6, RC=R12C4

OIP3, PLO (dBm)=6, RC=R13C7

USB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005:

OIP3 avg (dBm) vs. RF (GHz)

RF (GHz)

OIP3 avg (dBm)

OIP3, PLO (dBm)=0, RC=R10C4

OIP3, PLO (dBm)=0, RC=R10C6

OIP3, PLO (dBm)=0, RC=R11C6

OIP3, PLO (dBm)=0, RC=R12C4

OIP3, PLO (dBm)=0, RC=R13C7

OIP3, PLO (dBm)=3, RC=R10C4

OIP3, PLO (dBm)=3, RC=R10C6

OIP3, PLO (dBm)=3, RC=R11C6

OIP3, PLO (dBm)=3, RC=R12C4

OIP3, PLO (dBm)=3, RC=R13C7

OIP3, PLO (dBm)=6, RC=R10C4

OIP3, PLO (dBm)=6, RC=R10C6

OIP3, PLO (dBm)=6, RC=R11C6

OIP3, PLO (dBm)=6, RC=R12C4

OIP3, PLO (dBm)=6, RC=R13C7

14REC0607, USB Conv. Gain (dB) and Im. Rej (dBc)

-30

-28

-26

-24

-22

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

RF (GHz)

CG (dB) & IR (dBc)

Conv Gain, USB
Image Rej, USB

14REC0607, LSB Conv. Gain (dB) and Im. Rej (dBc)

-30

-28

-26

-24

-22

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

RF (GHz)

CG (dB) & IR (dBc)

Conv Gain, LSB
Image Rej, LSB

14REC0607 Noise Figure (dB)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

RF (GHz)

Noise Figure (dB)

USB
LSB

14REC0607 Third Order Intermod Performance, PLO = +6dBm

RF (GHz)

OIP3 & IIP3 (dBm)

IIP3, LSB
IIP3, USB
OIP3, LSB
OIP3, USB

January 2006 - Rev 25-Jan-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

R1007

11.0-17.0 GHz GaAs MMIC

Receiver

Page 3 of 8

Receiver Measurements (cont.)

LSB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005:

IIP3 avg (dBm) vs. RF (GHz)

-2

-1

RF (GHz)

IIP3 avg (dBm)

IIP3, PLO (dBm)=0, RC=R10C4

IIP3, PLO (dBm)=0, RC=R10C6

IIP3, PLO (dBm)=0, RC=R11C6

IIP3, PLO (dBm)=0, RC=R12C4

IIP3, PLO (dBm)=0, RC=R13C7

IIP3, PLO (dBm)=3, RC=R10C4

IIP3, PLO (dBm)=3, RC=R10C6

IIP3, PLO (dBm)=3, RC=R11C6

IIP3, PLO (dBm)=3, RC=R12C4

IIP3, PLO (dBm)=3, RC=R13C7

IIP3, PLO (dBm)=6, RC=R10C4

IIP3, PLO (dBm)=6, RC=R10C6

IIP3, PLO (dBm)=6, RC=R11C6

IIP3, PLO (dBm)=6, RC=R12C4

IIP3, PLO (dBm)=6, RC=R13C7

USB, PRF= - 20 dBm, PLO = 0, 3 & 6 dBm, VG4 = - 0.6 V, 5 RC, 08 AUG 2005:

IIP3 avg (dBm) vs. RF (GHz)

-2

-1

RF (GHz)

IIP3 avg (dBm)

IIP3, PLO (dBm)=0, RC=R10C4

IIP3, PLO (dBm)=0, RC=R10C6

IIP3, PLO (dBm)=0, RC=R11C6

IIP3, PLO (dBm)=0, RC=R12C4

IIP3, PLO (dBm)=0, RC=R13C7

IIP3, PLO (dBm)=3, RC=R10C4

IIP3, PLO (dBm)=3, RC=R10C6

IIP3, PLO (dBm)=3, RC=R11C6

IIP3, PLO (dBm)=3, RC=R12C4

IIP3, PLO (dBm)=3, RC=R13C7

IIP3, PLO (dBm)=6, RC=R10C4

IIP3, PLO (dBm)=6, RC=R10C6

IIP3, PLO (dBm)=6, RC=R11C6

IIP3, PLO (dBm)=6, RC=R12C4

IIP3, PLO (dBm)=6, RC=R13C7

January 2006 - Rev 25-Jan-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

R1007

11.0-17.0 GHz GaAs MMIC

Receiver

Page 4 of 8

Mechanical Drawing

Bias Arrangement

Bypass Capacitors

- See App Note [2]

(Note: Engineering designator is 14REC0607)

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold

All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)

Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.

Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.97 mg.

Bond Pad #1 (RF)
Bond Pad #2 (Vd1)

Bond Pad #9 (Vg2)
Bond Pad #10 (Vg1)

Bond Pad #3 (IF1)
Bond Pad #4 (Vd3)

Bond Pad #5 (LO)
Bond Pad #6 (Vg3)

Bond Pad #7 (Vg4)
Bond Pad #8 (IF2)

January 2006 - Rev 25-Jan-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

R1007

1.615

(0.064)

2.000

(0.079)

0.881

(0.035)

1.681

(0.066)

2.081

(0.082)

2.081

(0.082)

2.281

(0.090)

2.700

(0.106)

0.881

(0.035)

1.625

(0.064)

1.681

(0.066)

0.481

(0.019)

0.0

Vg3

Vg4

Vg1,2

IF2

IF1

Vd3

Vd1

11.0-17.0 GHz GaAs MMIC

Receiver

Page 5 of 8

January 2006 - Rev 25-Jan-06

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

R1007

App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1=3.0V with Id1=80mA and

Vd3=5.0V with Id3=100mA. Additionally, a mixer bias is also required with Vg4=-0.5V. Adjusting Vg4 above or below this value can adversely

affect conversion gain, image rejection and intercept point performance. It is also recommended to use active biasing to keep the currents

constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the

power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in

series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain

voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage.

Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement

For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.

For Individual Stage Bias -- Each DC pad (Vd1,3 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as

possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

Typical Application

Mimix Broadband's 11.0-17.0 GHz GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to
128 QAM. The receiver can be used in upper and lower sideband applications from 11.0-17.0 GHz.

IR Mixer

LNA

Mimix Broadband MMIC-based 11.0-17.0 GHz Receiver Block Diagram

RF IN

11.0-17.0 GHz

XR1007

BPF

Coupler

IF Out
2 GHz

LO(+3.0dBm)

9.0-15.0 GHz (USB Operation)
13.0-19.0 GHz (LSB Operation)

AGC Control

Buffer

MTTF Table (TBD)

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

deg Celsius

FITs

E+

MTTF Hours

E+

Rth

C/W

Bias Conditions: Vd1=3.0V, Id1=80mA, Vd3=5.0V, Id3=100 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: XR1007

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: XR1007