U1001
Mimix Broadband
's 33.0-40.0 GHz GaAs MMIC transmitter has
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF
isolation. The device has a pair of sub-harmonic mixers
configured to form an image reject mixer which requires an
LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The
image reject mixer reduces the need for unwanted sideband
filtering before the power amplifier. The use of the sub-
harmonic mixer makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q mixer inputs
are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix
Broadband
's 0.15 m GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface passivation
to protect and provide a rugged part with backside via holes
and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
33.0-40.0 GHz GaAs MMIC
Transmitter
Sub-Harmonic Transmitter
Low DC Power Consumption
Optional Power Bias
8.0 dB Conversion Gain
30 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
70 mA
+0.3 VDC
+10 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.
(2) Measured using constant current.
(3) Min/Max limits over 33.0-39.5 GHz.
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) (USB/LSB)
LO Input Drive (P
LO
)
Image Rejection (USB/LSB)
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Parameter
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dBm
VDC
VDC
mA
Min.
34.0
33.0
15.5
DC
-
3.0/3.0
-
8.0/5.0
-
-
-
-1.0
-
Typ.
-
-
-
-
12.0
8.0/8.0
+12.0
12.0/12.0
30.0
+3.0
+3.0
-0.5
30
Max.
40.0
40.0
21.5
3.0
-
-
-
-
-
-
+5.5
0.0
60
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
4
1,2
Page 1 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
4
3
3
May 2005 - Rev 13-May-05
U1001
Page 2 of 8
XU1001 Vd=3.0 V Id=30 mA
0
10
20
30
40
50
36.00 36.50
37.00 37.50 38.00 38.50
39.00 39.50 40.00
Frequency (GHz)
LO
/
R
F I
s
ol
a
t
i
o
n (
d
B
)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
XU1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices
0
2
4
6
8
10
12
14
35
36
37
38
39
40
41
RF Fre que ncy (GHz)
C
o
n
v
er
si
o
n
G
a
i
n
(
d
B
)
+3sigma
Median
Mean
-3sigma
XU1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices
0
2
4
6
8
10
12
14
35
36
37
38
39
40
41
RF Fre que ncy (GHz)
C
o
n
v
er
si
o
n
G
a
i
n
(
d
B
)
Max
Median
Mean
-3sigma
XU1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
35
36
37
38
39
40
41
RF Fre que ncy (GHz)
Ima
g
e
R
e
je
c
t
io
n
(
d
B
c
)
Max
Median
Mean
-3sigma
Transmitter Measurements
XU1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~700 Devices
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
35
36
37
38
39
40
41
RF Fre que ncy (GHz)
I
m
ag
e R
e
j
e
ct
i
o
n
(
d
B
c
)
+3sigma
Max
Median
Mean
-3sigma
U1001
33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
Page 3 of 8
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Transmitter Measurements (cont.)
U1001
33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
XU1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Fre que ncy (GHz)
Co
n
v
e
r
s
i
o
n
G
a
i
n
(d
B)
Max
Median
Mean
-3sigma
XU1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Fre que ncy (GHz)
C
o
n
ver
si
o
n
G
a
i
n
(
d
B
)
Max
Median
Mean
-3sigma
XU1001 Vd=3.0 V, Id=30 mA, USB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices
-25
-20
-15
-10
-5
0
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Fre que ncy (GHz)
I
m
ag
e R
e
j
e
ct
i
o
n
(
d
B
c
)
Max
Median
Mean
-3sigma
XU1001 Vd=3.0 V, Id=30 mA, LSB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices
-25
-20
-15
-10
-5
0
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Fre que ncy (GHz)
Im
a
g
e
R
e
je
c
t
io
n
(
d
B
c
)
Max
Median
Mean
-3sigma
XU1001 Vd=3.0 V, Id=30 mA, USB/LSB
LO=+12.0 dBm, IF=1.0 GHz @ -20.0 dBm, ~170 Devices
-35
-30
-25
-20
-15
-10
-5
0
30.5
31.5
32.5
33.5
34.5
35.5
36.5
37.5
38.5
39.5
40.5
RF Fre que ncy (GHz)
R
F
Retu
r
n
L
o
ss
(d
B
)
Max
Median
Mean
Min
Page 4 of 8
Bias Arrangement
(Note: Engineering designator is 38TRX_01B2)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.491 mg.
Bond Pad #1 (RF Out)
Bond Pad #2 (IF2)
Bond Pad #3 (IF1)
Bond Pad #4 (LO)
Bond Pad #5 (Vg)
Bond Pad #6 (Vd)
Mechanical Drawing
Bypass Capacitors
- See App Note [2]
U1001
IF2
IF1
LO
Vg
Vd
RF
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
U1001
0.541
(0.021)
2
3
4
5
6
1
1.143
(0.045)
0.312
(0.012)
0.0
0.541
(0.021)
1.143
(0.045)
2.900
(0.114)
2.500
(0.098)
1.285
(0.051)
0.0
U1001
Vd
IF2
IF1
RF
LO
Vg
2
3
4
5
6
1
Page 5 of 8
App Note [1] Biasing
- As shown in the bonding diagram, this device is operated with both stages in parallel.
Nominal bias is Vd=3V, Id=30mA. Power bias may be as high as Vd=5.5V, Id=60mA. It is also recommended to
use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most
reproducible results. Depending on the supply voltage available and the power dissipation constraints, the
bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series
with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct
drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage
to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement
- Each DC pad (Vd and Vg) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
Note:
RF and IF ports are AC coupled (DC blocks on chip). LO port is DC coupled (no DC block on chip.)
MTTF Tables
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
84 deg Celsius
104 deg Celsius
124 deg Celsius
FITs
1.31E-03
2.09E-02
2.53E-01
MTTF Hours
7.63E+11
4.79E+10
3.95E+09
Rth
-
318.0
C/W
-
Bias Conditions:
Vd=3.0V, Id=30 mA
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
159 deg Celsius
179 deg Celsius
199 deg Celsius
FITs
7.18E+00
4.79E+01
2.72E+02
MTTF Hours
1.39E+08
2.09E+07
3.67E+06
Rth
-
314.8
C/W
-
Bias Conditions:
Vd=5.5V, Id=60 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
U1001
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
33.0-40.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
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