Mimix Broadband

's single ended fed (no external

balun required) 7.5-25.0/15.0-50.0 GHz GaAs MMIC
doubler has a +15.0 dBm output drive and is an
excellent LO doubler that can be used to drive
fundamental mixer devices. It is also well suited to
drive Mimix's XR1002 receiver device. This MMIC uses
Mimix Broadband

's 0.15 µm GaAs PHEMT device

model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

Excellent Broadband Mixer Driver
Single Ended Fed Doubler with Distributed
Buffer Amplifier
Excellent LO Driver for Mimix Receivers
+15 dBm Output Drive
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010

Features

Electrical Characteristics (Ambient Temperature T = 25

Parameter

Input Frequency Range (fin)

Output Frequency Range (fout)

Input Return Loss (S11)

Output Return Loss (S22)

Harmonic Gain (fout)

Fundamental Rejection (fin)

Saturated Output Power (Psat)

RF Input Power (RF Pin)

Output Power at +0.0 dBm Pin (Pout)

Drain Bias Voltage (Vd1,2)

Gate Bias Voltage (Vg1)

Gate Bias Voltage (Vg2)

Supply Current (Id1,2) (Vd=5.0V, Vg1=-0.6V, Vg2=0.0V Typical)

Source Voltage (Vss)

Source Current (Iss)

Units

GHz
GHz

dB
dB
dB

dBc

dBm
dBm
dBm

VDC
VDC
VDC

VDC

Min.

7.5

15.0

-
-
-
-
-

-10.0

-
-

-1.2
-1.2

-5.5

Typ.

-
-

TBD
12.0

13
20

+15

+13.0

+5.0

-0.6

0.0

220
-5.0

Max.

25.0
50.0

-
-
-
-
-

+10.0

+5.5
+0.1
+0.1

250
-2.0

Absolute Maximum Ratings

Supply Voltage (Vd)
Supply Voltage (Vss)
Supply Current (Id)
Supply Current (Iss)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)

+6.0 VDC

-6.0 VDC

300 mA

60 mA

+0.3 VDC

+12.0 dBm

-65 to +165

-55 to MTTF Table

MTTF Table

Chip Device Layout

Page 1 of 6

(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

April 2006 - Rev 10-Apr-06

General Description

X1000

Doubler Measurements

Page 2 of 6

0458_4_sa mples: Po ut (2xF in) vs . Fin (GHz)

Pin=0dBm , VD 1=5V, VG 1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open

Fin ( G Hz)

out

(

in)

P out (2 xF in)

0458_4_s amples: Pout (Fin) vs . F in (G Hz)

Pi n=0dBm , VD 1=5V, VG 1=-0.6V, VS S= -5V, VD 2=5V ~150mA, VG 2=open

-20

-15

-10

-5

1 2

1 6

1 8

2 2

Fin ( G Hz)

t
(

in)

Po ut ( 2xFi n)

P out (1 xF in)

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

X1000

Harmonic Gain and Fundamental Rejection vs Output Freq.

Pin = 0 dBm

XX100 0: Po ut (2 xF in) an d Po ut (F in) v s . F in (GHz)

Pin = -8 to +6 dBm

-25

-20

-15

-10

-5

1 4

1 8

Fin ( G Hz)

t
(

Bm)

, Pin (dB m)=-8

, Pin (dB m)=-6

, Pin (dB m)=-4

, Pin (dB m)=-2

, P in (dBm)= 0

, P in (dBm)= 2

, P in (dBm)= 4

, P in (dBm)= 6

, Pin (dB m)=-8

, Pin (dB m)=-6

, Pin (dB m)=-4

, Pin (dB m)=-2

, P in (dBm)= 0

, P in (dBm)= 2

, P in (dBm)= 4

, P in (dBm)= 6

P out ( 2xF in )

P out (Fi n)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

April 2006 - Rev 10-Apr-06

Harmonic Products, Pin = +5 dBm (Fin = 6 - 20 GHz)

-30

-25

-20

-15

-10

-5

Fout (GHz)

Pout (dBm)

Fund. (5dBm)

2xFin (5dBm)

3xFin (5dBm)

4xFin (5dBm)

5xFin (5dBm)

6xFin (5dBm)

7xFin (5dBm)

Fund

2nd (RF out)

3rd

4th

5th

6th

7th

Harmonic Products, Pin = +0 dBm (Fin = 6 - 20 GHz)

-30

-25

-20

-15

-10

-5

Fout (GHz)

Pout (dBm)

Fund. (0dBm)

2xFin (0dBm)

3xFin (0dBm)

4xFin (0dBm)

5xFin (0dBm)

6xFin (0dBm)

7xFin (0dBm)

Fund

2nd (RF out)

3rd

4th

5th

6th

7th

Mechanical Drawing

Bias Arrangement

Page 3 of 6

Bypass Capacitors - See App Note [2]

(Note: Engineering designator is 40DBL0458)

Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.

Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold

All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).

Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.

Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.566 mg.

Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)

Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)

Bond Pad #5 (Vg2)
Bond Pad #6 (Vss)

Bond Pad #7 (Vg1)

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

X1000

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

April 2006 - Rev 10-Apr-06

1.620

(0.064)

0.295

(0.012)

0.695

(0.027)

0.196

(0.008)

0.894

(0.035)

1.560

(0.061)

0.494

(0.019)

0.295

(0.012)

0.0

0.791

(0.031)

Vd1

RF In

Vg2

RF Out

Vd2

Vss

Vg1

Page 4 of 6

App Note [1] Biasing

It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=5.0V with Id1=80mA

and Id2=140mA and Vss=-5.0V with Iss=50mA. XX1000 provides good performance at reduced bias with Vss=-2.0V and Iss=25mA.
Maximum output power is achieved with Vss=-5.0V and Iss=50mA. Separate biasing is recommended if the doubler is to be used at
high levels of saturation, where gate rectification will alter the effective gate control voltage. It is also recommended to use active
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on
the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltages needed to do this are Vg1=-0.6V and
Vg2=0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied
voltage to ensure negative gate bias is available before applying the positive drain supply.

App Note [2] Bias Arrangement

For Individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2, Vss and Vg1, 2) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.

MTTF Tables (TBD)

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

deg Celsius

FITs

E+

MTTF Hours

E+

Rth

C/W

Bias Conditions: Vd1=Vd2=4.0V, Id1=40 mA, Id2=140 mA, Vss=-5.0V, Iss=50mA

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

X1000

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

April 2006 - Rev 10-Apr-06

Page 5 of 6

Device Schematic

Mimix Broadband MMIC-based 18.0-34.0 GHz Doubler/Receiver Block Diagram

(Changing LO and IF frequencies as required allows design to operate as high as 34 GHz)

Typical Application

RF IN

21.5-23.5 GHz

IR Mixer

XR1002

BPF

IF Out
2 GHz

Atten=0-12dB

AGC Control

LO(+3.0dBm)

9.75-11.75 GHz
11.75-12.75 GHz

19.5-21.5 GHz (USB Operation)
23.5-25.5 GHz (LSB Operation)

XX1000

7.5-25.0/15.0-50.0 GHz GaAs MMIC

Active Doubler

X1000

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

April 2006 - Rev 10-Apr-06

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: XX1000

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: XX1000